MT3L-0113HS
更新时间:2024-09-18 23:24:32
描述:GaAs MMIC High Dynamic Range Mixer
MT3L-0113HS 概述
GaAs MMIC High Dynamic Range Mixer
MT3L-0113HS 数据手册
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1. Device Overview
MT3L-0113H
1.1 General Description
Die
MT3L-0113H is a GaAs MMIC triple balanced mixer with high
dynamic range and low conversion loss. This mixer belongs to the
T3 family which offers high IP3, P1dB, and broad operating
bandwidths for applications in the S, C and X bands. MT3L-
0113H is the monolithic cousin of the MT3-0113HCQG and
sister of the MT3H-0113HCH targeted towards lower IF
applications in a small footprint. The MT3L-0113H is available as
both wire bondable die and a connectorized module. For a list of
recommended LO driver amps for all mixers and IQ mixers, see
here.
Module
1.2 Features
1.3 Applications
▪ Low IF band
▪ Test and measurement equipment
▪ Broad, overlapping RF/LO & IF
bands
▪ S/C/X band radar
▪ High >+30 dBm IP3
1.4 Functional Block Diagram
1.5 Part Ordering Options1
Part
Product
Lifecycle
Export
Classification
Description
Number
Package Green Status
MT3L-0113HCH-2
MT3L-0113HS
Wire bondable die
CH
Active
Active
EAR99
RoHS
Connectorized
module
S
EAR99
1
Refer to our website for a list of definitions for terminology presented in this table.
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MT3L-0113H
3.6.1 Typical Performance Plots: IP3,
Sine Wave LO................................... 8
Table of Contents
3.6.1 Typical Performance Plots: IP3,
Square Wave LO............................... 9
1. Device Overview ............................... 1
1.1 General Description........................ 1
1.2 Features ....................................... 1
1.3 Applications................................... 1
1.4 Functional Block Diagram ................ 1
1.5 Part Ordering Options..................... 1
2. Port Configurations and Functions ...... 3
2.1 Port Diagram................................. 3
2.2 Port Functions............................... 3
3. Specifications ................................... 4
3.1 Absolute Maximum Ratings.............. 4
3.2 Package Information ....................... 4
3.3 Recommended Operating Conditions . 4
3.4 Sequencing Requirements ............... 4
3.5 Electrical Specifications .................. 5
3.6 Typical Performance Plots ............... 6
3.6.2 Typical Performance Plots: LO
Harmonic Isolation........................... 10
3.6.3 Typical Spurious Performance:
Down-Conversion............................ 11
3.6.4 Typical Spurious Performance: Up-
Conversion..................................... 12
4. Die Mounting Recommendations ....... 13
4.1 Mounting and Bonding
Recommendations .............................. 13
4.2 Handling Precautions .................... 13
4.3 Bonding Diagram.......................... 14
5. Mechanical Data............................. 15
5.1 CH Package Outline Drawing ......... 15
5.2 S Package Outline Drawing............ 15
Revision History
Revision Code
Comment
Datasheet Initial Release
Revision Date
January 2019
-
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MT3L-0113H
2. Port Configurations and Functions
2.1 Port Diagram
A top-down view of the MT3L-0113H’s CH package outline drawing is shown below. The
MT3L-0113H has the input and output ports given in Port Functions. The MT3L-0113H
can be used in either an up or down conversion. For configuration A, input the LO into
port 1, use port 3 for the RF, and port 2 for the IF. For configuration B, input the LO
into port 3, use port 1 for the RF, and port 2 for the IF.
2.2 Port Functions
Equivalent Circuit
Port
Function
Description
for Package
LO
(Configuration A)
RF
Port 1 is DC short for the CH and S
packages.
Port 1
(Configuration B)
Port 2 is DC openfor the CH and S
package.
Port 2
Port 3
IF
RF
(Configuration A)
LO
Port 3 is DC short for the CH and S
packages.
(Configuration B)
CH package ground path is provided
through the substrate and ground bond
pads. S package ground provided
through metal housing and outer coax
conductor.
GND
Ground
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MT3L-0113H
3. Specifications
3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the
device. If these limits are exceeded, the device may be inoperable or have a reduced
lifetime.
Parameter
Maximum Rating
Units
Port 1 DC Current
Port 2 DC Current
150
150
mA
mA
dBm
°C
Power Handling, at any Port
Operating Temperature
Storage Temperature
+33
-55 to +100
-65 to +125
ºC
3.2 Package Information
Parameter
Details
Rating
ESD
Human Body Model (HBM), per MIL-STD-750, Method 1020
S Package
1 A
Weight
10 g
3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should
be operated, to guarantee the performance given in Electrical Specifications Operating
outside these limits may not necessarily cause damage to the device, but the
performance may degrade outside the limits of the electrical specifications. For limits,
above which damage may occur, see Absolute Maximum Ratings.
Min Nominal Max Units
TA, Ambient Temperature
LO Input Power
-55
+25
+100
+25
°C
+15
dBm
3.4 Sequencing Requirements
There is no requirement to apply power to the ports in a specific order. However, it is
recommended to provide a 50Ω termination to each port before applying power. This is a
passive diode mixer that requires no DC bias.
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MT3L-0113H
3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Typical data shown is
for the connectorized S package mixer used with a +20 dBm sine wave LO. Specifications
shown for configuration A (B).
Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. All bare die are 100% DC tested and visually
inspected.
Parameter
Test Conditions
Min Typical
Max
Units
RF (Port 3) Frequency Range
1.5
13
LO (Port 1) Frequency Range
I (Port 2) Frequency Range
1.5
13
5
GHz
0.25
RF/LO = 1.5 - 13 GHz
I = 0.75 GHz
RF/LO = 1.5 - 13 GHz
I = 0.25- 0.75 GHz
RF/LO = 1.5 - 13 GHz
I = 0.75- 5 GHz
8.5
(10)
10.5
(11)
9.5
11.5
(13)
Conversion Loss (CL)2
dB
(11)
RF/LO = 1.5 - 13 GHz
I = 0.75 GHz
Noise Figure (NF)3
LO to RF
8.5
dB
dB
RF/LO = 1.5 - 13 GHz
IF/LO = 1.5 - 13 GHz
RF/IF = 1.5 - 13 GHz
43
41
39
Isolation
LO to IF
RF to IF
RF/LO = 1.5 - 13 GHz
I = 0.75 GHz
+31
(+31)
+20
Input IP3 (IIP3)4
dBm
dBm
Input 1 dB Gain Compression
Point (P1dB)5
(+20)
2
Measured as a down converter to a fixed 750 MHz IF. Unless otherwise stated, frequency
conversion done using a highside LO.
3
Mixer Noise Figure typically measures within 0.5 dB of conversion loss for IF frequencies greater
than 5 MHz.
4
IP3 depends on LO drive condition. Reported table value is measured with a square wave LO
formed using 2x ADM1-0026PA in series with +10 dBm input into the first stage. LO Power
reported in plots is of the fundamental tone only. Square wave LO power in plots is stepped down
using broadband DC-40 GHz attenuators.
5
P1dB is measured using a +23 dBm square wave LO.
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MT3L-0113H
3.6 Typical Performance Plots
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MT3L-0113H
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3.6.1 Typical Performance Plots: IP3, Sine Wave LO
MT3L-0113H
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MT3L-0113H
3.6.1 Typical Performance Plots: IP3, Square Wave LO
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MT3L-0113H
3.6.2 Typical Performance Plots: LO Harmonic Isolation
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3.6.3 Typical Spurious Performance: Down-Conversion
MT3L-0113H
Typical spurious data is provided by selecting RF and LO frequencies (± m*LO ± n*RF) within the
RF/LO bands, to create a spurious output within the IF band. The mixer is swept across the full
spurious band and the mean is calculated. The numbers shown in the table below are for a -10
dBm RF input. Spurious suppression is scaled for different RF power levels by (n-1), where “n” is
the RF spur order. For example, the 2RF x 2LO spur is 63 dBc for a -10 dBm input, so a -20
dBm RF input creates a spur that is (2-1) x (-10 dB) lower, or 73 dBc.
Typical Down-conversion spurious suppression (dBc): Config A (B), Sine Wave LO
-10 dBm
0xLO
1xLO
2xLO
3xLO
4xLO
5xLO
RF Input
1xRF
30 (35)
62 (62)
Reference
67 (66)
42 (41)
63 (66)
18 (18)
68 (63)
35 (41)
56 (58)
21 (23)
69 (64)
2xRF
3xRF
111 (110)
129 (128)
165 (172)
82 (87)
98 (102)
124 (127)
159 (161)
80 (81)
101 (100)
123 (123)
159 (161)
138 (138)
131 (129)
145 (145)
4xRF
145 (145)
147 (154)
128 (129)
148 (149)
5xRF
Typical Down-conversion spurious suppression (dBc): Config A (B), Square Wave LO
-10 dBm
RF Input
0xLO
1xLO
2xLO
3xLO
4xLO
5xLO
1xRF
2xRF
3xRF
4xRF
5xRF
29 (35)
69 (62)
Reference
68 (69)
37 (39)
69 (70)
13 (13)
73 (71)
37 (37)
61 (64)
18 (19)
70 (73)
109 (114)
137 (141)
173 (174)
94 (94)
106 (110)
133 (137)
167 (170)
91 (91)
107 (110)
133 (137)
171 (167)
137 (138)
138 (137)
161 (162)
145 (145)
158 (163)
140 (140)
162 (163)
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3.6.4 Typical Spurious Performance: Up-Conversion
MT3L-0113H
Typical spurious data is taken by mixing an input within the IF band, with LO frequencies
(± m*LO ± n*IF), to create a spurious output within the RF output band. The mixer is swept
across the full spurious output band and the mean is calculated. The numbers shown in the table
below are for a -10 dBm IF input. Spurious suppression is scaled for different IF input power levels
by (n-1), where “n” is the IF spur order. For example, the 2IFx1LO spur is typically 64 dBc for a -
10 dBm input with a sine-wave LO, so a -20 dBm IF input creates a spur that is (2-1) x (-10 dB)
lower, or 74 dBc.
Typical Up-conversion spurious suppression (dBc): Config A (B), Sine Wave LO
-10 dBm
0xLO
1xLO
2xLO
3xLO
4xLO
5xLO
RF Input
1xIF
23 (30)
71 (63)
Reference
64 (67)
42 (41)
60 (57)
19 (17)
57 (59)
39 (43)
63 (59)
22 (21)
52 (57)
2xIF
3xIF
102 (101)
135 (131)
163 (153)
85 (85)
100 (99)
127 (123)
161 (157)
85 (81)
94 (100)
124 (121)
155 (154)
81 (79)
4xIF
127 (128)
150 (156)
122 (120)
151 (149)
115 (117)
144 (146)
5xIF
Typical Up-conversion spurious suppression (dBc): Config A (B), Square Wave LO
-10 dBm
RF Input
0xLO
1xLO
2xLO
3xLO
4xLO
5xLO
1xIF
2xIF
3xIF
4xIF
5xIF
23 (30)
71 (63)
Reference
64 (67)
37 (36)
58 (59)
13 (13)
73 (71)
37 (37)
61 (64)
18 (19)
70 (73)
102 (101)
135 (131)
163 (153)
89 (90)
105 (110)
130 (133)
172 (174)
91 (91)
107 (110)
133 (137)
171 (167)
137 (138)
138 (137)
161 (162)
127 (128)
150 (156)
140 (140)
162 (163)
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MT3L-0113H
4. Die Mounting Recommendations
4.1 Mounting and Bonding Recommendations
Marki MMICs should be attached directly to a ground plane with conductive epoxy. The
ground plane electrical impedance should be as low as practically possible. This will
prevent resonances and permit the best possible electrical performance. Datasheet
performance is only guaranteed in an environment with a low electrical impedance ground.
Mounting - To epoxy the chip, apply a minimum amount of conductive epoxy to the
mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip.
Cure epoxy according to manufacturer instructions.
Wire Bonding - Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire.
Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding
force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as
short as possible <0.31 mm (12 mils).
Circuit Considerations – 50 Ω transmission lines should be used for all high frequency
connections in and out of the chip. Wirebonds should be kept as short as possible, with
multiple wirebonds recommended for higher frequency connections to reduce parasitic
inductance. In circumstances where the chip more than .001” thinner than the
substrate, a heat spreading spacer tab is optional to further reduce bondwire length and
parasitic inductance.
4.2 Handling Precautions
General Handling
Chips should be handled with care using tweezers or a vacuum collet. Users should take
precautions to protect chips from direct human contact that can deposit contaminants,
like perspiration and skin oils on any of the chip's surfaces.
Static Sensitivity
GaAs MMIC devices are sensitive to ESD and should be handled, assembled, tested, and
transported only in static protected environments.
Cleaning and Storage: Do not attempt to clean the chip with a liquid cleaning system or
expose the bare chips to liquid. Once the ESD sensitive bags the chips are stored in are
opened, chips should be stored in a dry nitrogen atmosphere.
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MT3L-0113H
4.3 Bonding Diagram
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MT3L-0113H
5. Mechanical Data
5.1 CH Package Outline Drawing
1. CH Substrate material is 0.004 in thick GaAs.
2. I/O trace finish is 4.2 microns Au. Ground plane finish is 5 microns Au.
5.2 S Package Outline Drawing
Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice.
Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any
particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any
product.
© Marki Microwave, Inc.
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