MTE8090M [MARKTECH]
Infrared Emitting Diode; 红外发光二极管型号: | MTE8090M |
厂家: | MARKTECH CORPORATE |
描述: | Infrared Emitting Diode |
文件: | 总1页 (文件大小:142K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Infrared Emitting Diode
MTE8090M
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
I T E M
Power Output
Forward Voltage
SYMBOL
PO
CONDITIONS
IF=20mA
IF=20mA
VR=5V
MIN
TYP
4.5
MAX
1.6
UNIT
mW
V
VF
IR
1.3
Reverse Current
10 μ
A
Peak Wavelength
Spectral Line Half Width
Half Intensity Beam Angle
Rise Time
λp IF=20mA
Δλ IF=20mA
880
60
±80
1.5
0.8
15
nm
nm
deg.
μS
μS
pF
θ
Tr
Tf
Cj
P/T
V/T
IF=20mA
IFP=50mA
IFP=50mA
1MHz ,V=0V
IF=10mA
Fall Time
Junction Capacitance
Temp. Coefficient of PO
Temp. Coefficient of VF
-0.5
-1.5
%
/℃
mV/℃
IF=10mA
RELATIVE POWER vs FORWARD
CURRENT
FORWARD I-V CHARACTERISTICS
60
RADIATION PATTERN
120
100
80
60
40
20
0
250
200
150
100
50
① Cathode
② Anode
50
40
30
20
10
0
FEATURES
・High-output Power
Dimensions (Unit:mm)
・Compact
・High Reliability
APPLICATIONS ・Optical Switches
・Optical Sensors
0
SPECTRAL OUTPUT
0
1
2
3
0
10
20
30
40
50
60
-90 -60 -30
0
30
60
90
BEAM ANGLE(deg.)
120
100
80
FORWARD VOLTAGE(V)
FORWARD CURRENT(mA)
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
POWER OUTPUT vs TEMPERATURE
IF=10mA
RATINGS
50
I T E M
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
SYMBOL
IF
UNIT
mA
A
THERMAL DERATING CURVE
3
2.5
2
60
50
40
30
20
10
0
140
120
100
80
0.5
5
IFP
VR
60
V
Power Dissipation
Operating Temp.
Storage Temp.
Junction Temp.
Lead Soldering Temp.*2
*1:Tw=10uS,T=10mS
PD
100
mW
℃
℃
℃
℃
40
1.5
1
60
Topr
Tstg
Tj
-20 TO 85
-30 TO 100
100
20
40
20
0.5
0
0
0
260
Tls
780
880
980
-30
0
30
60
90
-30
0
30
60
90
-30
0
30
60
AMBIENT TEMPERATURE(℃)
90
WAVELENGTH(nm)
AMBIENT TEMPERATURE(℃)
AMBIENT TEMPERATURE(℃)
*2:Time 5 Sec max,Position:Up to 3mm from the body
OPTRANS
To purchase this part contact
Marktech Optoelectronics at
Marktech
Optoelectronics
www.marktechopto.com
800.984.5337
11/24/2009 001-LSC880M3A.xls
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