DS90340I-PCX+ [MAXIM]

Real Time Clock, Non-Volatile, 0 Timer(s), CMOS, ROHS COMPLIANT, POWERCAP MODULE-34;
DS90340I-PCX+
型号: DS90340I-PCX+
厂家: MAXIM INTEGRATED PRODUCTS    MAXIM INTEGRATED PRODUCTS
描述:

Real Time Clock, Non-Volatile, 0 Timer(s), CMOS, ROHS COMPLIANT, POWERCAP MODULE-34

时钟 双倍数据速率 外围集成电路
文件: 总19页 (文件大小:379K)
中文:  中文翻译
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DS1743/DS1743P  
Y2K-Compliant, Nonvolatile Timekeeping  
RAMs  
www.maxim-ic.com  
FEATURES  
PIN CONFIGURATIONS  
Integrated NV SRAM, Real-Time Clock,  
Crystal, Power-Fail Control Circuit, and  
Lithium Energy Source  
TOP VIEW  
N.C.  
A12  
A7  
1
2
3
4
5
6
7
8
9
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
WE  
DS1743  
Clock Registers are Accessed Identically to  
the Static RAM. These Registers Reside in  
the Eight Top RAM Locations.  
CE2  
A6  
A8  
A5  
A9  
A4  
A11  
OE  
Century Byte Register  
A3  
A2  
Totally Nonvolatile with Over 10 Years of  
Operation in the Absence of Power  
BCD-Coded Century, Year, Month, Date,  
Day, Hours, Minutes, and Seconds with  
Automatic Leap Year Compensation Valid  
through 2099  
A10  
A1  
CE  
A0  
10  
11  
12  
13  
14  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ0  
DQ1  
DQ2  
GND  
28-Pin Encapsulated Package  
(28 PIN 740)  
Low-Battery-Voltage Level Indicator Flag  
Power-Fail Write Protection Allows for ±10%  
VCC Power-Supply Tolerance  
Lithium Energy Source is Electrically  
Disconnected to Retain Freshness Until  
Power is Applied for the First Time  
DIP Module Only  
34  
N.C.  
N.C.  
N.C.  
1
2
3
N.C.  
N.C.  
N.C.  
DS1743P  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
N.C.  
A12  
A11  
A10  
A9  
4
5
6
7
8
9
RST  
VCC  
WE  
OE  
Standard JEDEC Bytewide 8k x 8 Static  
RAM Pinout  
CE  
A8  
DQ7  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
10  
11  
12  
13  
14  
15  
16  
17  
DQ6  
DQ5  
DQ4  
DQ3  
DQ2  
DQ1  
DQ0  
GND  
PowerCap Module Board Only  
Surface-Mountable Package for Direct  
Connection to PowerCap Containing  
Battery and Crystal  
GND VBAT  
X2  
X1  
Replaceable Battery (PowerCap)  
Power-On Reset Output  
34-Pin PowerCap Module Board  
(Uses DS9034PCX PowerCap)  
Pin-for-Pin Compatible with Other Densities  
of DS174XP Timekeeping RAM  
Underwriters Laboratory (UL) Recognized to  
Prevent Charging of the Internal Lithium  
Battery  
Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device  
may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata.  
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REV: 121306  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
PIN DESCRIPTION  
NAME  
FUNCTION  
PIN  
PIN  
PowerCap  
NAME  
FUNCTION  
PDIP  
PowerCap  
1, 2, 3,  
31–34  
30  
PDIP  
20  
Chip Enable,  
Active Low  
1
N.C.  
No Connection  
8
28  
7
CE  
A10  
OE  
2
3
4
A12  
A7  
A6  
21  
Address Input  
Output Enable,  
Active Low  
25  
24  
23  
22  
21  
20  
19  
18  
16  
15  
14  
17  
13  
12  
11  
10  
9
22  
Address Input  
23  
24  
25  
26  
29  
27  
26  
A11  
A9  
A8  
CE2  
5
A5  
Address Input  
6
A4  
7
A3  
Chip Enable 2  
Write Enable,  
Active Low  
Power-Supply  
Input  
8
A2  
9
A1  
27  
6
WE  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
A0  
28  
5
VCC  
DQ0  
DQ1  
DQ2  
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
Data Input/  
Output  
Power-On Reset  
Output, Active  
Low  
4
RST  
Ground  
Crystal  
X1, X2  
VBAT  
Connection  
Battery  
Data Input/  
Output  
Connection  
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DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
ORDERING INFORMATION  
VOLTAGE  
PART  
TEMP RANGE PIN-PACKAGE  
TOP MARK**  
(V)  
DS1743-70  
0°C to +70°C  
0°C to +70°C  
0°C to +70°C  
28 EDIP Module  
28 EDIP Module  
28 EDIP Module  
5
DS1743-70  
DS1743-85  
5
DS1743-85  
DS1743-100  
5
DS1743-100  
DS1743-100 IND  
DS1743P-70  
-40°C to +85°C 28 EDIP Module  
5
DS1743-100-IND  
DS1743P-70  
0°C to +70°C  
0°C to +70°C  
0°C to +70°C  
34 PowerCap*  
34 PowerCap*  
34 PowerCap*  
5
DS1743P-85  
5
DS1743P-85  
DS1743P-100  
5
DS1743P-100  
DS1743P-100 IND  
DS1743W-120  
DS1743W-120 IND  
DS1743W-150  
DS1743W-150 IND  
DS1743WP-120  
DS1743WP-120 IND  
DS1743-70  
DS1743P-100IND  
DS1743W-120  
DS1743W-120 IND  
DS1743W-150  
DS1743W-150 IND  
DS1743WP-120  
DS1743WP-120 IND  
DS1743-70+  
-40°C to +85°C 34 PowerCap*  
5
0°C to +70°C  
-40°C to +85°C 28 EDIP Module  
0°C to +70°C 28 EDIP Module  
-40°C to +85°C 28 EDIP Module  
0°C to +70°C 34 PowerCap*  
28 EDIP Module  
3.3  
3.3  
3.3  
3.3  
3.3  
3.3  
5
-40°C to +85°C 34 PowerCap*  
0°C to +70°C  
0°C to +70°C  
0°C to +70°C  
28 EDIP Module  
28 EDIP Module  
28 EDIP Module  
DS1743-85+  
5
DS1743-85  
DS1743-100+  
5
DS1743-100  
DS1743-100 IND+  
DS1743P-70+  
-40°C to +85°C 28 EDIP Module  
5
DS1743-100-IND  
DS1743P-70  
0°C to +70°C  
0°C to +70°C  
0°C to +70°C  
34 PowerCap*  
34 PowerCap*  
34 PowerCap*  
5
DS1743P-85+  
5
DS1743P-85  
DS1743P-100+  
DS1743P-100IND+  
DS1743W-120+  
DS1743W-120 IND+  
DS1743W-150+  
DS1743W-150 IND+  
DS1743WP-120+  
DS1743WP-120 IND+  
DS9034PCX  
5
DS1743P-100  
DS1743P-100 IND  
DS1743W-120  
DS1743W-120 IND  
DS1743W-150  
DS1743W-150 IND  
DS1743WP-120  
DS1743WP-120 IND  
DS9034PC  
-40°C to +85°C 34 PowerCap*  
5
0°C to +70°C  
-40°C to +85°C 28 EDIP Module  
0°C to +70°C 28 EDIP Module  
-40°C to +85°C 28 EDIP Module  
0°C to +70°C 34 PowerCap*  
-40°C to +85°C 34 PowerCap*  
0°C to +70°C PowerCap  
-40°C to +85°C PowerCap IND  
0°C to +70°C PowerCap  
-40°C to +85°C PowerCap IND  
28 EDIP Module  
3.3  
3.3  
3.3  
3.3  
3.3  
3.3  
DS90340I-PCX  
DS9034PCX+  
DS90340I-PCX+  
DS9034PCI  
DS9034PC  
DS9034PCI  
*DS9034PCX required (must be ordered separately).  
**A ‘+’ indicates lead-free. The top mark will include a ‘+’ symbol on lead-free devices.  
DESCRIPTION  
The DS1743 is a full-function, year-2000-compliant (Y2KC), real-time clock/calendar (RTC) and 8k x 8  
nonvolatile static RAM. User access to all registers within the DS1743 is accomplished with a bytewide  
interface as shown in Figure 1. The RTC information and control bits reside in the eight uppermost RAM  
locations. The RTC registers contain century, year, month, date, day, hours, minutes, and seconds data in  
24-hour binary-coded decimal (BCD) format. Corrections for the day of the month and leap year are made  
automatically. The RTC clock registers are double buffered to avoid access of incorrect data that can occur  
during clock update cycles. The double-buffered system also prevents time loss as the timekeeping  
countdown continues unabated by access to time register data. The DS1743 also contains its own power-  
fail circuitry, which deselects the device when the VCC supply is in an out-of-tolerance condition. When  
VCC is above VPF, the device is fully accessible. When VCC is below VPF, the internal CE signal is forced  
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DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
high, preventing any access. When VCC rises above VPF, access remains inhibited for TREC, allowing time  
for the system to stabilize. These features prevent loss of data from unpredictable system operation brought  
on by low VCC as errant access and update cycles are avoided.  
PACKAGES  
The DS1743 is available in two packages: the 28-pin DIP and the 34-pin PowerCap module. The 28-pin  
DIP-style module integrates the crystal, lithium energy source, and silicon all in one package. The 34-pin  
PowerCap Module Board is designed with contacts for connection to a separate PowerCap (DS9034PCX)  
that contains the crystal and battery. This design allows the PowerCap to be mounted on top of the  
DS1743P after the completion of the surface-mount process. Mounting the PowerCap after the surface-  
mount process prevents damage to the crystal and battery due to the high temperatures required for solder  
reflow. The PowerCap is keyed to prevent reverse insertion. The PowerCap Module Board and PowerCap  
are ordered separately and shipped in separate containers. The part number for the PowerCap is  
DS9034PCX.  
TIME AND DATE OPERATION  
The time and date information is obtained by reading the appropriate register bytes. Table 2 shows the  
RTC registers. The time and date are set or initialized by writing the appropriate register bytes. The  
contents of the time and date registers are in the BCD format. The day-of-week register increments at  
midnight. Values that correspond to the day of week are user-defined, but must be sequential (i.e., if 1  
equals Sunday, then 2 equals Monday and so on). Illogical time and date entries result in undefined  
operation.  
CLOCK OPERATIONS-READING THE CLOCK  
While the double-buffered register structure reduces the chance of reading incorrect data, internal updates  
to the DS1743 clock registers should be halted before clock data is read to prevent reading of data in  
transition. However, halting the internal clock register updating process does not affect clock accuracy.  
Updating is halted when a 1 is written into the read bit, bit 6 of the century register (see Table 2). As long  
as a 1 remains in that position, updating is halted. After a halt is issued, the registers reflect the count that  
is day, date, and time that was current at the moment the halt command was issued. However, the internal  
clock registers of the double-buffered system continue to update so that the clock accuracy is not affected  
by the access of data. All the DS1743 registers are updated simultaneously after the internal clock register  
updating process has been re-enabled. Updating is within a second after the read bit is written to 0.  
The READ bit must be a zero for a minimum of 500µs to ensure the external registers are updated.  
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DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
Figure 1. Block Diagram  
Dallas  
Semiconductor  
DS1743  
Table 1. Truth Table  
CE  
OE WE  
VCC  
CE2  
X
MODE  
Deselect  
Deselect  
Write  
DQ  
POWER  
VIH  
X
VIL  
VIL  
VIL  
X
X
X
X
X
X
High-Z  
High-Z  
Data In  
Data Out  
High-Z  
High-Z  
Standby  
VIL  
VIH  
Standby  
VCC > VPF  
VIL  
Active  
VIH VIL VIH  
VIH VIH VIH  
Read  
Active  
Read  
Deselect  
Active  
VSO < VCC < VPF  
VCC<VSO<VPF  
X
X
X
X
X
X
CMOS Standby  
Data-Retention  
Mode  
X
Deselect  
High-Z  
SETTING THE CLOCK  
As shown in Table 2, bit 7 of the century register is the write bit. Setting the write bit to a 1, like the read  
bit, halts updates to the DS1743 registers. The user can then load them with the correct day, date and time  
data in 24-hour BCD format. Resetting the write bit to a 0 then transfers those values to the actual clock  
counters and allows normal operation to resume.  
STOPPING AND STARTING THE CLOCK OSCILLATOR  
The clock oscillator may be stopped at any time. To increase the shelf life, the oscillator can be turned off  
to minimize current drain from the battery. The OSC bit is the MSB (bit 7) of the seconds registers, see  
Table 2. Setting it to a 1 stops the oscillator.  
FREQUENCY TEST BIT  
As shown in Table 2, bit 6 of the day byte is the frequency test bit. When the frequency test bit is set to  
logic 1 and the oscillator is running, the LSB of the seconds register will toggle at 512Hz. When the  
seconds register is being read, the DQ0 line will toggle at the 512Hz frequency as long as conditions for  
access remain valid (i.e., CE low, OE low, WE high, and address for seconds register remain valid and  
stable).  
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DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
CLOCK ACCURACY (DIP MODULE)  
The DS1743 is guaranteed to keep time accuracy to within ±1 minute per month at +25°C. The RTC is  
calibrated at the factory by Dallas Semiconductor using nonvolatile tuning elements, and does not require  
additional calibration. For this reason, methods of field clock calibration are not available and not  
necessary. The electrical environment also affects clock accuracy, so caution should be taken to place the  
RTC in the lowest-level EMI section of the PC board layout. For additional information, please refer to  
Application Note 58: Crystal Considerations with Dallas Real-Time Clocks.  
CLOCK ACCURACY (PowerCap MODULE)  
The DS1743 and DS9034PCX are each individually tested for accuracy. Once mounted together, the  
module will typically keep time accuracy to within ±1.53 minutes per month (35ppm) at +25°C. The  
electrical environment also affects clock accuracy, so caution should be taken to place the RTC in the  
lowest-level EMI section of the PC board layout. For additional information, please refer to Application  
Note 58: Crystal Considerations with Dallas Real-Time Clocks.  
Table 2. Register Map  
DATA  
B4  
ADDRESS  
FUNCTION  
RANGE  
B7  
B6  
B5  
B3  
B2  
Year  
B1  
B0  
1FFF  
1FFE  
10 Year  
Year  
00–99  
01–12  
10  
X
X
X
Month  
Month  
Month  
1FFD  
1FFC  
1FFB  
1FFA  
1FF9  
1FF8  
X
BF  
X
X
OSC  
X
FT  
X
10 Date  
Date  
Day  
Hour  
Minutes  
Seconds  
Century  
Date  
Day  
Hour  
Minutes  
Seconds  
Control  
01–31  
01–07  
00–23  
00–59  
00–59  
00–39  
X
X
X
10 Hour  
10 Minutes  
10 Seconds  
W
R
10 Century  
R = READ BIT  
X = SEE NOTE BELOW  
FT = FREQUENCY TEST  
BF = BATTERY FLAG  
OSC = STOP BIT  
W = WRITE BIT  
Note: All indicated “X” bits must be set to “0” when written to ensure proper clock operation.  
RETRIEVING DATA FROM RAM OR CLOCK  
The DS1743 is in the read mode whenever OE (output enable) is low, WE (write enable) is high, and CE  
(chip enable) is low. The device architecture allows ripple-through access to any of the address locations in  
the NV SRAM. Valid data will be available at the DQ pins within tAA after the last address input is stable,  
providing that the, CE and OE access times and states are satisfied. If CE, or OE access times and states  
are not met, valid data will be available at the latter of chip enable access (tCEA) or at output enable access  
time (tCEA). The state of the data input/output pins (DQ) is controlled by CE and OE. If the outputs are  
activated before tAA, the data lines are driven to an intermediate state until tAA. If the address inputs are  
changed while CE and OE remain valid, output data will remain valid for output data hold time (tOH) but  
will then go indeterminate until the next address access.  
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DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
WRITING DATA TO RAM OR CLOCK  
The DS1743 is in the write mode whenever WE, and CE are in their active state. The start of a write is  
referenced to the latter occurring transition of WE, on CE. The addresses must be held valid throughout the  
cycle. CE or WE must return inactive for a minimum of tWR prior to the initiation of another read or write  
cycle. Data in must be valid tDS prior to the end of write and remain valid for tDH afterward. In a typical  
application, the OE signal will be high during a write cycle. However, OE can be active provided that care  
is taken with the data bus to avoid bus contention. If OE is low prior to WE transitioning low the data bus  
can become active with read data defined by the address inputs. A low transition on WE will then disable  
the outputs tWEZ after WE goes active.  
DATA-RETENTION MODE  
The 5V device is fully accessible and data can be written or read only when VCC is greater than VPF.  
However, when VCC is below the power-fail point, VPF, (point at which write protection occurs) the  
internal clock registers and SRAM are blocked from any access. At this time (PowerCap only) the power-  
fail reset-output signal (RST) is driven active and remains active until VCC returns to nominal levels. When  
VCC falls below the battery switch point VSO (battery supply level), device power is switched from the VCC  
in to the backup battery. RTC operation and SRAM data are maintained from the battery until VCC is  
returned to nominal levels.  
The 3.3V device is fully accessible and data can be written or read only when VCC is greater than VPF  
.
When VCC falls below the power-fail point, VPF, access to the device is inhibited. At this time the power-  
fail reset-output signal (RST) is driven active and remains active until VCC returns to nominal levels. If VPF  
is less than VSO, the device power is switched from VCC to the backup supply (VBAT) when VCC drops  
below VPF. If VPF is greater than VSO, the device power is switched from VCC to the backup supply (VBAT  
)
when VCC drops below VSO. RTC operation and SRAM data are maintained from the battery until VCC is  
returned to nominal levels. The RST (PowerCap only) signal is an open-drain output and requires a pullup  
resistor. Except for RST, all control, data, and address signals must be powered down when VCC is  
powered down.  
BATTERY LONGEVITY  
The DS1743 has a lithium power source that is designed to provide energy for clock activity and clock and  
RAM data retention when the VCC supply is not present. The capability of this internal power supply is  
sufficient to power the DS1743 continuously for the life of the equipment in which it is installed. For  
specification purposes, the life expectancy is 10 years at +25°C with the internal clock oscillator running in  
the absence of VCC power. Each DS1743 is shipped from Dallas Semiconductor with its lithium energy  
source disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than  
VPF, the lithium energy source is enabled for battery backup operation. Actual life expectancy of the  
DS1743 will be longer than 10 years since no lithium battery energy is consumed when VCC is present.  
BATTERY MONITOR  
The DS1743 constantly monitors the battery voltage of the internal battery. The battery flag bit (bit 7) of  
the day register is used to indicate the voltage level range of the battery. This bit is not writeable and  
should always be a 1 when read. If a 0 is ever present, an exhausted lithium energy source is indicated and  
both the contents of the RTC and RAM are questionable.  
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DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
ABSOLUTE MAXIMUM RATINGS  
Voltage Range on Any Pin Relative to Ground……………………………………………………-0.3V to +6.0V  
Operating Temperature Range…………………………………………………………………….-40°C to +85°C  
Storage Temperature Range……………………………………………………………………….-40°C to +85°C  
Soldering Temperature (EDIP) (leads, 10 seconds)…………………….……………………………..…+260°C  
Soldering Temperature…………………………………………..….See J-STD-020 Specification (See Note 8)  
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections  
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability.  
OPERATING RANGE  
RANGE  
Commercial  
Industrial  
TEMP RANGE  
VCC  
0°C to +70°C  
3.3V ±10% or 5V ±10%  
3.3V ±10% or 5V ±10%  
-40°C to +85°C  
RECOMMENDED DC OPERATING CONDITIONS  
(TA = Over the Operating Range.)  
PARAMETER  
SYMBOL CONDITIONS MIN TYP MAX  
UNITS NOTES  
VCC  
+0.3V  
VCC  
2.2  
V
1
VCC = 5V ±10%  
Logic 1 Voltage All Inputs  
VIH  
VIL  
VCC = 3.3V  
±10%  
VCC = 5V ±10%  
VCC = 3.3V  
±10%  
2.0  
-0.3  
-0.3  
V
V
V
1
1
1
+0.3V  
+0.8  
Logic 0 Voltage All Inputs  
+0.6  
DC ELECTRICAL CHARACTERISTICS (5V)  
( VCC = 5.0V ±10%, TA = Over the Operating Range.)  
PARAMETER  
SYMBOL  
MIN TYP MAX  
UNITS NOTES  
Active Supply Current  
ICC  
15  
50  
mA  
2, 3  
TTL Standby Current  
ICC1  
ICC2  
1
3
mA  
2, 3  
(CE = VIH, CE2 = VIL)  
CMOS Standby Current  
(CE VCC - 0.2V; CE2 = GND + 0.2V)  
1
3
mA  
2, 3  
Input Leakage Current (Any Input)  
IIL  
-1  
-1  
+1  
+1  
µA  
µA  
Output Leakage Current (Any Output)  
IOL  
Output Logic 1 Voltage  
(IOUT = -1.0mA)  
VOH  
2.4  
1
1
Output Logic 0 Voltage  
VOL1  
0.4  
(IOUT = 2.1mA)  
Write-Protection Voltage  
Battery Switchover Voltage  
VPF  
VSO  
4.20  
4.50  
V
1
1, 4  
VBAT  
8 of 16  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
DC ELECTRICAL CHARACTERISTICS (3.3V)  
(VCC = 3.3V ±10%, TA = Over the Operating Range.)  
PARAMETER  
SYMBOL  
MIN  
TYP  
10  
MAX  
30  
UNITS  
mA  
NOTES  
2, 3  
Active Supply Current  
ICC  
TTL Standby Current (CE = VIH)  
ICC1  
0.7  
2
mA  
2, 3  
CMOS Standby Current  
(CE VCC - 0.2V;  
CE2 = GND + 0.2V)  
Input Leakage Current  
(Any Input)  
ICC2  
0.7  
2
mA  
2, 3  
IIL  
IOL  
-1  
-1  
+1  
+1  
µA  
µA  
Output Leakage Current  
(Any Output)  
Output Logic 1 Voltage  
(IOUT = -1.0mA)  
VOH  
2.4  
1
Output Logic 0 Voltage  
VOL1  
VPF  
0.4  
1
1
(IOUT =2.1mA)  
Write-Protection Voltage  
2.75  
2.97  
V
V
VBAT  
or  
Battery Switchover Voltage  
VSO  
1, 4  
VPF  
AC CHARACTERISTICS—READ CYCLE (5V)  
(VCC = 5.0V ±10%, TA = Over the Operating Range.)  
ACCESS  
85ns  
PARAMETER  
SYMBOL  
UNITS NOTES  
70ns  
100ns  
MIN MAX MIN MAX MIN MAX  
Read Cycle Time  
tRC  
tAA  
tCEL  
tCEA  
tCE2A  
70  
85  
5
100  
5
ns  
ns  
ns  
ns  
ns  
Address Access Time  
CE to CE2 to DQ Low-Z  
CE Access Time  
70  
85  
100  
5
5
5
5
70  
80  
85  
95  
100  
105  
CE2 Access Time  
CE and CE2 Data-Off  
tCEZ  
25  
30  
35  
ns  
Time  
OE to DQ Low-Z  
OE Access Time  
OE Data-Off Time  
tOEL  
tOEA  
tOEZ  
5
5
5
5
5
5
ns  
ns  
ns  
35  
25  
45  
30  
55  
35  
Output Hold from  
tOH  
ns  
Address  
9 of 16  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
AC CHARACTERISTICS—READ CYCLE (3.3V)  
(VCC = 3.3V ±10%, TA = Over the Operating Range.)  
ACCESS  
120ns  
150ns  
PARAMETER  
SYMBOL  
UNITS  
NOTES  
MIN MAX MIN MAX  
Read Cycle Time  
Address Access Time  
tRC  
tAA  
120  
5
150  
5
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
120  
150  
CE and CE2 Low to DQ Low-Z  
CE and CE2 Access Time  
CE and CE2 Data-Off time  
OE Low to DQ Low-Z  
OE Access Time  
tCEL  
tCEA  
tCEZ  
tOEL  
tOEA  
tOEZ  
tOH  
5
5
5
120  
40  
150  
50  
5
5
5
5
100  
35  
130  
35  
OE Data-Off Time  
Output Hold from Address  
READ CYCLE TIMING DIAGRAM  
10 of 16  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
AC CHARACTERISTICS—WRITE CYCLE (5V)  
(VCC = 5.0V ±10%, TA = Over the Operating Range.)  
ACCESS  
85ns  
PARAMETER  
SYMBOL  
UNITS NOTES  
70ns  
100ns  
MIN MAX MIN MAX MIN MAX  
Write Cycle Time  
Address Setup Time  
WE Pulse Width  
CE Pulse Width  
CE2 Pulse Width  
Data Setup Time  
Data Hold Time CE  
Data Hold Time CE2  
Address Hold Time  
WE Data-Off Time  
Write Recovery Time  
tWC  
tAS  
tWEW  
tCEW  
tCE2W  
tDS  
tDH  
tDH  
tAH  
tWEZ  
tWR  
70  
0
85  
0
100  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
5
50  
60  
65  
30  
0
65  
70  
75  
35  
0
70  
75  
85  
40  
0
5
5
5
5
5
5
8
5
8
5
8
5
25  
30  
35  
10  
10  
10  
AC CHARACTERISTICS—WRITE CYCLE (3.3V)  
(VCC = 3.3V ±10%, TA = Over the Operating Range.)  
ACCESS  
120ns  
150ns  
PARAMETER  
SYMBOL  
UNITS  
NOTES  
MIN MAX MIN MAX  
Write Cycle Time  
Address Setup Time  
WE Pulse Width  
CE and CE2 Pulse Width  
Data Setup Time  
Data Hold Time CE  
Data Hold Time CE2  
Address Hold Time  
WE Data-Off Time  
Write Recovery Time  
tWC  
tAS  
tWEW  
tCEW  
tDS  
tDH  
tDH  
tAH  
tWEZ  
tWR  
120  
0
100  
110  
80  
0
150  
0
130  
140  
90  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
5
5
5
5
5
5
10  
0
10  
0
40  
50  
10  
10  
11 of 16  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
WRITE CYCLE TIMING—WRITE-ENABLE CONTROLLED (See Note 5)  
WRITE CYCLE TIMINGCE/CE2-CONTROLLED (See Note 5)  
12 of 16  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
POWER-UP/DOWN CHARACTERISTICS—5V  
(VCC = 5.0V ±10%, TA = Over the Operating Range.)  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
NOTES  
CE or WE at VIH, CE2 at VIL, Before  
tPD  
0
µs  
Power-Down  
VCC Fall Time: VPF(MAX) to VPF(MIN)  
tF  
tFB  
tR  
300  
10  
0
µs  
µs  
µs  
ms  
VCC Fall Time: VPF(MIN) to VSO  
VCC Rise Time: VPF(MIN) to VPF(MAX)  
Power-Up Recover Time  
tREC  
35  
Expected Data-Retention Time  
tDR  
10  
years  
6, 7  
(Oscillator On)  
POWER-UP/DOWN TIMING (5V DEVICE)  
13 of 16  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
POWER-UP/DOWN CHARACTERISTICS—3.3V  
(VCC = 3.3V ±10%, TA = Over the Operating Range.)  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
NOTES  
CE or WE at VIH, Before  
tPD  
0
µs  
Power-Down  
VCC Fall Time: VPF(MAX) to VPF(MIN)  
VCC Rise Time: VPF(MIN) to VPF(MAX)  
tF  
tR  
300  
0
µs  
µs  
VPF to RST High  
tREC  
35  
ms  
Expected Data-Retention Time  
tDR  
10  
years  
6, 7  
(Oscillator On)  
POWER-UP/DOWN WAVEFORM TIMING (3.3V DEVICE)  
CAPACITANCE  
(TA = +25°C)  
PARAMETER  
Capacitance on All Input Pins  
Capacitance on All Output Pins  
SYMBOL  
CIN  
MIN  
TYP  
MAX  
7
UNITS  
pF  
NOTES  
CO  
10  
pF  
14 of 16  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
AC TEST CONDITIONS  
Output Load: 50 pF + 1TTL Gate  
Input Pulse Levels: 0 to 3.0V  
Timing Measurement Reference Levels:  
Input: 1.5V  
Output: 1.5V  
Input Pulse Rise and Fall Times: 5ns  
NOTES:  
1) Voltages are referenced to ground.  
2) Typical values are at +25°C and nominal supplies.  
3) Outputs are open.  
4) Battery switchover occurs at the lower of either the battery terminal voltage or VPF.  
5) The CE2 control signal functions the same as the CE signal except that the logic levels for active and  
inactive levels are opposite. If CE2 is used to terminate a write, the CE2 data hold time (tDH) applies.  
6) Data-retention time is at +25°C.  
7) Each DS1743 has a built-in switch that disconnects the lithium source until VCC is first applied by the  
user. The expected t is defined for DIP modules as a cumulative time in the absence of VCC starting  
from the time powerDiRs first applied by the user.  
8) RTC Encapsulated DIP Modules (EDIP) can be successfully processed through conventional wave-  
soldering techniques as long as temperatures as long as temperature exposure to the lithium energy  
source contained within does not exceed +85°C. Post-solder cleaning with water-washing techniques is  
acceptable, provided that ultrasonic vibration is not used. See the PowerCap package drawing for  
details regarding the PowerCap package.  
15 of 16  
DS1743/DS1743P Y2K-Compliant, Nonvolatile Timekeeping RAMs  
PACKAGE INFORMATION  
For the latest package outline information, go to www.maxim-ic.com/DallasPackInfo.  
28-pin 740 EDIP Module Document number: 56-G0002-001  
32-pin PowerCap Module Document number: 56-G0003-001  
16 of 16  
Maxim/Dallas Semiconductor cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim/Dallas Semiconductor product. No  
circuit patent licenses are implied. Maxim/Dallas Semiconductor reserves the right to change the circuitry and specifications without notice at any time.  
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600  
© 2006 Maxim Integrated Products  
The Maxim logo is a registered trademark of Maxim Integrated Products, Inc. The Dallas logo is a registered trademark of Dallas Semiconductor.  
EN GL ISH ? ? ? ? ? ? ? ? ? ?  
C OM PA N Y M EM B ER S  
W HA T ' S N EW PR ODUCTS S OLU TI ONS D E SI G N AP P NOT ES SUPP ORT  
BU Y  
DS 1 74 3  
Pa r t Nu mb e r T ab l e  
N o te s:  
1 . S ee t he DS1 743 Q uic kVie w D at a Sh ee t f or f urt her inf orm ati on o n th is p rodu ct fam i l y or d ow n lo a d th e D S 1 74 3 fu l l d at a  
s h ee t (P DF, 316kB ).  
2. O th er o p ti on s a n d l inks f or p urch asi ng p arts a re l is te d at : h t tp : / /w w w. m a xi m -i c. com /s al es .  
3 . Did n' t F ind W ha t You N e ed ? A sk our ap pli cat ion s e ng ine ers . Exp ert a ssi stance i n findi ng part s, us uall y wi thi n one  
b us i ne ss d a y.  
4 . Pa r t n u mb e r suf f ix e s : T o r T &R = ta p e a n d r e e l; + = Ro HS/le ad - fr e e ; # = RoH S/ lea d - e xe m p t. Mo r e : S e e fu ll da t a sh e et  
o r P a rt N a mi n g C o nv en t i o n s .  
5 . * S ome p ackages hav e variations, listed on the drawing. " PkgCode/Variation" te ll s w hi ch vari at i on th e pro d uct u se s.  
P art Num ber  
D S 1 7 4 3 - 8 5 +  
F r ee  
Sa mp le  
B uy  
D i re c t  
T em p  
R oHS/L ead- Fr ee?  
Ma t e ri a l s A n a ly s is  
P
a
c
k
a
g
e
:
T
Y
P
E
P
I
N
S
S
I
Z
E
D R A WI N G C O D E / V A R *  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Use pkg code/ vari atio n: MDF 28+2 *  
0 C t o + 7 0 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
DS1 743-85IND +  
D S 1 7 4 3 - 1 0 0  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Use pkg code/ vari atio n: MDF 28+2 *  
- 4 0 C t o + 8 5 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Us e pkg cod e/ var iat io n: M DF 28 -2*  
0 C t o + 7 0 C Ro H S / Le a d -F re e: N o  
Ma t e ri a l s A n a ly s is  
D S 1 7 4 3 - 1 0 0 +  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Use pkg code/ vari atio n: MDF 28+2 *  
0 C t o + 7 0 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
D S 1 7 4 3 W - 1 2 0  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Us e pkg cod e/ var iat io n: M DF 28 -2*  
0 C t o + 7 0 C Ro H S / Le a d -F re e: N o  
Ma t e ri a l s A n a ly s is  
D S 1 7 4 3 W - 1 5 0  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Us e pkg cod e/ var iat io n: M DF 28 -2*  
0 C t o + 7 0 C Ro H S / Le a d -F re e: N o  
Ma t e ri a l s A n a ly s is  
D S 1 7 4 3 W - 1 2 0 +  
D S 1 7 4 3 W - 1 5 0 +  
D S 1 74 3 W -1 2 0 I ND +  
D S1 74 3W -1 20 I ND  
D S1 7 4 3 - 1 0 0 I ND  
DS 174 3-10 0 IND+  
DS 1 74 3W P- 12 0IN D+  
D S 1 7 4 3 W P - 1 2 0 +  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Use pkg code/ vari atio n: MDF 28+2 *  
0 C t o + 7 0 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Use pkg code/ vari atio n: MDF 28+2 *  
0 C t o + 7 0 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Use pkg code/ vari atio n: MDF 28+2 *  
0 C t o + 7 0 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Us e pkg cod e/ var iat io n: M DF 28 -2*  
- 4 0 C t o + 8 5 C Ro H S / Le a d -F re e: N o  
Ma t e ri a l s A n a ly s is  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Us e pkg cod e/ var iat io n: M DF 28 -2*  
- 4 0 C t o + 8 5 C Ro H S / Le a d -F re e: N o  
Ma t e ri a l s A n a ly s is  
MOD; 28 pi n;60 0  
Dwg : 5 6 - G 0 0 0 2 - 0 0 1 A (P D F )  
Use pkg code/ vari atio n: MDF 28+2 *  
- 4 0 C t o + 8 5 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
PW RCP;3 4 p in ;9 6 0  
Dwg : 5 6 - G 0 0 0 3 - 0 0 1 A 1 (P D F )  
Use pkgco de/var iatio n: PC 1+2 *  
- 4 0 C t o + 8 5 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
PW RCP;3 4 p in ;9 6 0  
Dwg : 5 6 - G 0 0 0 3 - 0 0 1 A 1 (P D F )  
Use pkgco de/var iatio n: PC 1+2 *  
0 C t o + 7 0 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
D S 1 7 4 3 W P - 1 5 0  
D S 1 7 4 3 W P - 1 2 0  
D S 1 7 4 3 W P - 1 5 0 +  
DS 174 3WP -12 0IND  
PW RCP;3 4 p in ;9 6 0  
Dwg : 5 6 - G 0 0 0 3 - 0 0 1 A 1 (P D F )  
U se p k gc od e /v a ri at i on : P C1 -2*  
0 C t o + 7 0 C Ro H S / Le a d -F re e: N o  
Ma t e ri a l s A n a ly s is  
PW RCP;3 4 p in ;9 6 0  
Dwg : 5 6 - G 0 0 0 3 - 0 0 1 A 1 (P D F )  
U se p k gc od e /v a ri at i on : P C1 -2*  
0 C t o + 7 0 C Ro H S / Le a d -F re e: N o  
Ma t e ri a l s A n a ly s is  
PW RCP;3 4 p in ;9 6 0  
Dwg : 5 6 - G 0 0 0 3 - 0 0 1 A 1 (P D F )  
Use pkgco de/var iatio n: PC 1+2 *  
0 C t o + 7 0 C Ro H S / Le a d -F re e: Yes  
Ma t e ri a l s A n a ly s is  
PW RCP;3 4 p in ;9 6 0  
Dwg : 5 6 - G 0 0 0 3 - 0 0 1 A 1 (P D F )  
U se p k gc od e /v a ri at i on : P C1 -2*  
- 4 0 C t o + 8 5 C Ro H S / Le a d -F re e: N o  
Ma t e ri a l s A n a ly s is  
Did n' t F ind W ha t You Ne e d ?  
CO NT ACT U S: SE ND US AN EMAI L  
Co p y rig h t 2 00 7 b y M a x im I n te g r a te d Pr o d u c ts , D a lla s S em i co n d u c to r Le ga l N ot i ce s P ri va c y P o l ic y  

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