MAX14569EEE+T [MAXIM]
Dual-Pair LLT with Charge Pump and High-ESD Protection; 双对LLT与电荷泵和高ESD保护
| 型号： | MAX14569EEE+T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Dual-Pair LLT with Charge Pump and High-ESD Protection |
| 文件： | 总14页 (文件大小：2082K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-5523; Rev 0; 9/10
Dual-Pair LLT with Charge Pump
and High-ESD Protection
General Description
The MAX14569 is a dedicated dual-pair unidirectional
logic-level translator that is ideal for industrial and meter-
Features
S Ultra-Low Shutdown Supply Current, 0.01µA (typ)
S Ultra-Low V Supply Current, 1µA (max)
L
ing applications. Voltages V
and V set the logic
CC
L
S Operates Down to 1.6V on V
L
levels on either side of the device. Logic-high signals
present on the V side of the device appear as high-
S Continuous Current Drive Capability > 10mA
L
voltage logic signals on the V
vice versa.
side of the device and
CC
S Extended ESD Protection on V
Output Lines
Input and
CC
±±25V Human Body Model
±125V IEC 61000-4-± Air-Gap Discharge
±1±5V IEC 61000-4-± Contact Discharge
The device has two pairs of logic-level translators in
back-to-back configuration: one logic-level translator
from a low voltage to a high voltage and the other logic-
level translator from a high voltage to a low voltage. The
device also features a high-efficiency charge pump to
S 16-Pin QSOP Pac5age
S -40NC to +82NC Extended Operating Temperature
boost the battery input, V
, to V
(5V).
BAT
CC
Range
The device features an extreme power-saving mode
that reduces supply current to a typical 0.01FA. The
device also features thermal short-circuit protection for
enhanced protection in applications that route signals
externally.
Applications
Automatic Meter Reader
Remote Communications System
Industrial Networking
In addition, the device features enhanced high electro-
static discharge (ESD) Human Body Model (HBM) pro-
tection on OUTAVCC, INBVCC, OUTCVCC, and INDVCC
ports up to Q25kV. The MAX14569 is available in a
16-pin QSOP package, and is specified over the -40NC
to +85NC extended temperature range.
Ordering Information
PART
TEMP RANGE
PIN-PACKAGE
MAX14569EEE+T
-40NC to +85NC
16 QSOP
+Denotes a lead(Pb)-free/RoHS-compliant package.
T = Tape and reel.
Typical Operating Circuit
LITHIUM
BATTERY
1.8V TO 3.3V
0.1μF
1μF
0.47μF
V
V
CP1
CP2
L
BAT
2.2μF
V
CC
5V
µPROCESSOR
EN
CHARGE
PUMP
ENAB
METER
TRANSMITTER
UNIT
DATA
DATA
INAVL
OUTBVL
OUTAVCC
INBVCC
GND
MAX14569
EN
DATA
DATA
ENCD
INCVL
OUTDVL
METER
TRANSMITTER
UNIT
OUTCVCC
INDVCC
GND
GND
GND
_______________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Dual-Pair LLT with Charge Pump
and High-ESD Protection
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND.)
Short-Circuit Duration OUTAVCC, OUTCVCC,
OUTBVL, OUTDVL to GND....................................Continuous
V
V
V
, V ..................................................................-0.3V to +6V
BAT
CC
CC
L
(no shutdown condition).....................(V
- 0.3V) to +6V
Continuous Power Dissipation (T = +70NC)
BAT
A
(shutdown condition).......................................-0.3V to +6V
+ 0.3V)
QSOP (derate 9.6mW/NC above +70NC) ..................771.5mW
Junction-to-Ambient Thermal Resistance (Note 1)
CP1..........................................................-0.3V to (V
BAT
CP2..........................................................................-0.3V to +6V
ENAB, ENCD...........................................................-0.3V to +6V
INAVL, INCVL..........................................................-0.3V to +6V
B
...........................................................................103.7NC/W
JA
Junction-to-Case Thermal Resistance (Note 1)
...............................................................................37NC/W
B
JC
OUTBVL, OUTDVL ...................................... -0.3V to (V + 0.3V)
Operating Temperature Range.......................... -40NC to +85NC
Storage Temperature Range............................ -65NC to +150NC
Junction Temperature .....................................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
L
INBVCC, INDVCC .................................... -0.3V to (V
OUTAVCC, OUTCVCC............................. -0.3V to (V
Short-Circuit Current OUTAVCC,
+ 0.3V)
+ 0.3V)
CC
CC
OUTCVCC, OUTBVL, OUTDVL to GND ................Continuous
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
BAT
= 2.3V to 5.5V, V = 1.6V to 5.5V, C
= 1FF, C
= 2.2FF, C = 0.1FF, T = -40NC to +85NC, unless otherwise noted.
VCC VL A
L
VBAT
Typical values are at V
= 3.6V, V = 3.0V, and T = +25NC.) (Notes 2, 3, 4)
BAT
L
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLIES
V
V
Supply Range
V
2.3
1.6
5.5
5.5
V
V
BAT
BAT
Supply Range
V
L
L
INBVCC = INDVCC = V
,
CC
Supply Current from V
I
1
FA
FA
FA
L
QVL
INAVL = INCVL = V
L
V
BAT
Shutdown Supply
V
V
= V
= 0V,
= 0V
INAVL
INCVL
I
0.01
0.01
0.5
0.5
SHDN-VBAT
Current
= V
ENAB
ENCD
V
Shutdown Supply
L
I
V
= V
= 0V
SHDN-VL
ENAB
ENAB
ENCD
ENCD
Current
V
Change in Supply
BAT
V
= V
= V
IL
Current with ENAB and
ENCD at V
DI
1
FA
VBAT
(Notes 2, 4, 5)
IL
OUTAVCC Shutdown
Mode Leakage Current
V
V
= 0V, V
= V ,
ENAB
ENCD IH
I
0.01
0.01
1
1
FA
FA
OUTAVCC_LEAK
= 5V
OUTAVCC
OUTCVCC Shutdown
Mode Leakage Current
V
V
= V , V
= 0V,
IH ENCD
ENAB
I
OUTCVCC_LEAK
= 5V
OUTCVCC
OUTBVL, OUTDVL
Shutdown Mode
Leakage Current
I
V
V
= V
= 0V,
OUTBVL_LEAK
ENAB
ENCD
0.01
1
FA
I
= V
= 0V
OUTDVL_LEAK
OUTBVL
OUTDVL
INBVCC Shutdown Mode
Leakage Current
V
V
= 0V, V
= V ,
ENAB
ENCD IH
I
0.01
0.01
1
1
FA
FA
INBVCC_LEAK
= 5V
INBVCC
INDVCC Shutdown Mode
Leakage Current
V
V
= V , V
= 0V,
ENAB
IH ENCD
I
INDVCC_LEAK
= 5V
INDVCC
2
Dual-Pair LLT with Charge Pump
and High-ESD Protection
ELECTRICAL CHARACTERISTICS (continued)
(V
BAT
= 2.3V to 5.5V, V = 1.6V to 5.5V, C
= 1FF, C
= 2.2FF, C = 0.1FF, T = -40NC to +85NC, unless otherwise noted.
L
VBAT
VCC
VL
A
Typical values are at V
= 3.6V, V = 3.0V, and T = +25NC.) (Notes 2, 3, 4)
BAT
L
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
INAVL, INCVL Leakage
Current
I
INAVL_LEAK
V
V
= V
= V
L
0.01
1
FA
INAVL
INCVL
I
INCVL_LEAK
ENAB, ENCD Input
Leakage Current
I
I
ENAB_LEAK
= V
= 5V
0.01
250
1
FA
ENAB
ENCD
ENCD_LEAK
OUTAVCC, OUTCVCC
Short-Circuit Output
Current
V
V
V
= 0V or
= 0V,
OUTAVCC
OUTCVCC
I
100
mA
SH
R 2.7V
BAT
LOGIC LEVELS
INAVL, INCVL Input-
Voltage High
V
0.7 x V
V
V
IHL
L
INAVL, INCVL Input-
Voltage Low
V
0.3 x V
ILL
L
INBVCC, INDVCC Input-
Voltage High
V
IHC
0.7 x V
V
CC
INBVCC, INDVCC Input-
Voltage Low
V
ILC
0.3 x V
V
CC
ENAB, ENCD Input-
Voltage High
V
IH
1.2
V
ENAB, ENCD Input-
Voltage Low
V
IL
0.4
V
ENAB, ENCD Input-
Voltage Hysteresis
V
HYS
120
mV
OUTBVL or OUTDVL source
current = 100FA, INBVCC or
V
V
- 0.1
L
L
INDVCC > V
IHC
OUTBVL, OUTDVL
Output-Voltage High
V
V
V
OHL
OUTBVL or OUTDVL source
current = 4mA, INBVCC or
- 0.4
INDVCC > V
IHC
OUTBVL or OUTDVL sink
current = 100FA, INBVCC or
0.1
0.4
INDVCC < V
ILC
OUTBVL, OUTDVL
Output-Voltage Low
V
OLL
OUTBVL or OUTDVL sink
current = 4mA,
INBVCC or INDVCC < V
ILC
OUTAVCC or OUTCVCC
source current = 100FA,
4.6
4.3
INAVL or INCVL > V , 2.7V P
IHL
V
BAT
P4.5V
OUTAVCC, OUTCVCC
Output-Voltage High
V
OHC
V
OUTAVCC or OUTCVCC
source current = 20mA,
INAVL or INCVL > V
IHL,
2.7V P V
P 4.5V
BAT
3
Dual-Pair LLT with Charge Pump
and High-ESD Protection
ELECTRICAL CHARACTERISTICS (continued)
(V
BAT
= 2.3V to 5.5V, V = 1.6V to 5.5V, C
= 1FF, C
= 2.2FF, C = 0.1FF, T = -40NC to +85NC, unless otherwise noted.
L
VBAT
VCC
VL
A
Typical values are at V
= 3.6V, V = 3.0V, and T = +25NC.) (Notes 2, 3, 4)
BAT
L
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
OUTAVCC or OUTCVCC
sink current = 100FA,
0.1
INAVL or INCVL < V
2.7V P
ILL,
V
P4.5V
BAT
OUTAVCC, OUTCVCC
Output-Voltage Low
V
V
OLC
OUTAVCC or OUTCVCC
sink current = 20mA,
INAVL or INCVL < V
0.4
ILL,
2.7V P V
P 4.5V
BAT
TIMING CHARACTERISTICS (Note 6)
OUTAVCC, OUTCVCC
Rise Time
t
Figure 1
Figure 1
Figure 2
Figure 2
25
25
25
25
ns
ns
ns
ns
RVCC
OUTAVCC, OUTCVCC
Fall Time
t
FVCC
OUTBVL, OUTDVL Rise
Time
t
RVL
OUTBVL, OUTDVL Fall
Time
t
FVL
Propagation Delay
(Driving INAVL, INCVL)
Low-to-High
t
t
t
t
Figure 1
Figure 1
Figure 2
Figure 2
30
30
30
30
ns
ns
ns
PVL-VCC-LH
PVL-VCC-HL
PVCC-VL-LH
PVCC-VL-HL
Propagation Delay
(Driving INAVL, INCVL)
High-to-Low
Propagation Delay
(Driving INBVCC,
INDVCC) Low-to-High
Propagation Delay
(Driving INBVCC,
ns
INDVCC) High-to-Low
Maximum Data Rate
12
Mbps
CHARGE PUMP
I
I
= 10mA, 2.7V PV
= 40mA, 3.0V PV
P4.5V
P4.5V
4.7
4.7
5.0
5.0
5.3
5.3
CC
BAT
V
CC
Output Voltage
V
CC
V
CC
BAT
V
Output Voltage
CC
I
= 40mA
45
mV
P-P
CC
Ripple
I
= 10mA,
CC
V
V
Line Regulation
Load Regulation
-1
+1
%
CC
2.7V P V
P 4.5V
BAT
DV
0 P I
P 40mA, V = 3.6V
BAT
-1
%
CC
CC
CC
Quiescent Current
I
I
= 0mA, V
BAT
= 3.6V
200
0.5
FA
Q
CC
V
V
= 3.6V, V
CC
= 0V
BAT
CP_ Leakage Current
I
0.01
FA
CP_LEAK
= V
= 0V
ENAB
ENCD
4
Dual-Pair LLT with Charge Pump
and High-ESD Protection
ELECTRICAL CHARACTERISTICS (continued)
(V
BAT
= 2.3V to 5.5V, V = 1.6V to 5.5V, C
= 1FF, C
= 2.2FF, C = 0.1FF, T = -40NC to +85NC, unless otherwise noted.
L
VBAT
VCC
VL
A
Typical values are at V
= 3.6V, V = 3.0V, and T = +25NC.) (Notes 2, 3, 4)
BAT
L
A
PARAMETER
SYMBOL
CONDITIONS
No capacitor between CP1 and
MIN
TYP
MAX
UNITS
CP_ Switching Frequency
Efficiency
f
0.5
1
1.5
MHz
CP
CP2, 2.7V P V
P 4.5V
BAT
I
= 10mA, V
= 2.7V,
CC
BAT
E
90
%
V
CC
= 5.0V
THERMAL PROTECTION
Thermal Shutdown
T
+150
+20
NC
NC
SHDN
Thermal Hysteresis
ESD PROTECTION
T
HYST
Human Body Model
±25
±15
IEC 61000-4-2 Air Gap
Discharge
OUTAVCC, INBVCC,
OUTCVCC, INDVCC
kV
kV
IEC 61000-4-2 Contact
Discharge
±12
±2
All Other Pins
Human Body Model
Note 2: V must be less than or equal to V
during normal operation. However, V can be greater than V
during startup and
L
CC
L
CC
shutdown conditions.
Note 3: All units are 100% production tested at T = +25NC. Limits over the operating temperature range are guaranteed by design
A
and not production tested.
Note 4: Connect a 0.47µF capacitor between CP1 and CP2.
Note 5: DI
= [I
(V
= V
= V ) - I
(V
= V = 0V)]. Guaranteed by design and not production tested.
ENCD
VBAT
VBAT ENAB
ENCD
IL
VBAT ENAB
Note 6: V
= 5.0V, V = 1.6V to V , V
= 2.7V to 3.6V, V
= V > V , R = 50I, R = 1MI, C = 15pF, T = -40NC to
ENCD IH S L L A
CC
L
CC BAT
ENAB
+85NC, unless otherwise noted. Typical values are at V
= 3.6V, V = 3.0V, and T = +25NC.
BAT
L A
5
Dual-Pair LLT with Charge Pump
and High-ESD Protection
t
t
FVCC
RVCC
V
V
BAT
L
90%
90%
INAVL/
INCVL
MAX14569
V
V
L
CC
50%
50%
OUTAVCC/
OUTCVCC
INAVL/
INCVL
50I
50%
10%
50%
C
L
R
L
OUTAVCC/
OUTCVCC
10%
t
t
PVL-VCC-HL
PVL-VCC-LH
Figure 1. Push-Pull Driving INAVL/INCVL Test Circuit and Timing
t
t
FVL
RVL
V
V
BAT
L
OUTBVL/
OUTDVL
MAX14569
V
V
L
CC
90%
90%
50%
OUTBVL/
OUTDVL
INBVCC/
INDVCC
50%
50I
50%
50%
C
L
R
L
INBVCC/
INDVCC
10%
10%
t
t
PVCC-VL-HL
PVCC-VL-LH
Figure 2. Push-Pull Driving INBVCC/INDVCC Test Circuit and Timing
6
Dual-Pair LLT with Charge Pump
and High-ESD Protection
Typical Operating Characteristics
(V
= 3.6V, V = 3V, C
= 1FF, C
= 2.2FF, C = 0.1FF, connect 0.47FF capacitor between CP1 and CP2, data rate =
VCC VL
BAT
L
VBAT
1Mbps, T = +25NC, unless otherwise noted.)
A
V
BAT
SHUTDOWN SUPPLY CURRENT
V SHUTDOWN SUPPLY CURRENT
L
V
SHUTDOWN SUPPLY CURRENT
vs. TEMPERATURE
BAT
vs. V
VOLTAGE
vs. V VOLTAGE
BAT
L
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10
9
8
7
6
5
4
3
2
1
0
V
V
= V
ENCD
= 0V
= 0V
V
= V = 0V
ENCD
V
V
= V
ENCD
= 0V
= 0V
ENAB
INAVL
ENAB
ENAB
INAVL
= V
INCVL
= V
INCVL
V
= 4.5V
BAT
V
= 3.6V
BAT
V
= 2.7V
BAT
2.3
3.1
3.9
VOLTAGE (V)
4.7
5.5
1.6
2.3
0
2.1
2.6
V VOLTAGE (V)
3.1
3.6
-40
-15
10
35
60
85
V
TEMPERATURE (°C)
BAT
L
V SHUTDOWN SUPPLY CURRENT
L
CP_ OPERATING FREQUENCY
V
SHORT-CIRCUIT CURRENT
CC
vs. TEMPERATURE
vs. V
vs. V
BAT
BAT
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1000
990
980
970
960
950
940
930
920
910
900
1000
900
800
700
600
500
400
300
200
100
0
V
= V = 0V
ENCD
ENAB
OUTAVCC/OUTCVCC
SHORT-TO-GROUND
T
= -40°C
A
T
A
= -40°C
T
= 25°C
A
V = 3.3V
L
T
= 25°C
= 85°C
A
T
A
= 85°C
V = 2.7V
L
T
A
V = 1.8V
L
-40
-15
10
35
60
85
2.3
3.2
4.1
5.0
3.2
4.1
5.0
TEMPERATURE (°C)
V
(V)
V
BAT
(V)
BAT
CP_ LINE REGULATION
(V vs. V
CP_ LOAD REGULATION
(V vs. I
)
)
CC
OUTPUT RIPPLE vs. LOAD CURRENT
CC
BAT
CC
5.10
5.08
5.06
5.04
5.02
5.00
4.98
4.96
4.94
4.92
4.90
5.2
5.1
5.0
4.9
4.8
4.7
4.6
4.5
200
180
160
140
120
100
80
ENAB = ENCD = HIGH
ENAB = ENCD = HIGH
ENAB = ENCD = HIGH
= 10mA
V
= 3.6V
I
BAT
CC
60
40
20
0
2.7
3.0
3.3
3.6
(V)
3.9
4.2
4.5
0
5
10 15 20 25 30 35 40
(mA)
5
10 15 20 25 30 35 40
(mA)
V
I
CC
I
BAT
CC
7
Dual-Pair LLT with Charge Pump
and High-ESD Protection
Typical Operating Characteristics (continued)
(V
= 3.6V, V = 3V, C
= 1FF, C
= 2.2FF, C = 0.1FF, connect 0.47FF capacitor between CP1 and CP2, data rate =
VCC VL
BAT
L
VBAT
1Mbps, T = +25NC, unless otherwise noted.)
A
OUTBVL/OUTDVL FALL TIME
vs. LOAD CAPACITANCE
OUTBVL/OUTDVL RISE TIME
vs. LOAD CAPACITANCE
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100
0
0
0
20
40
60
80
100
1000
1000
LOAD CAPACITANCE (pF)
LOAD CAPACITANCE (pF)
OUTBVL/OUTDVL PROPAGATION DELAY
vs. LOAD CAPACITANCE
OUTAVCC/OUTCVCC FALL TIME
vs. LOAD CAPACITANCE
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
t
PVCC-VL-HL
t
PVCC-VL-LH
0
20
40
60
80
100
200
400
600
800
LOAD CAPACITANCE (pF)
LOAD CAPACITANCE (pF)
OUTAVCC/OUTCVCC RISE TIME
vs. LOAD CAPACITANCE
OUTAVCC/OUTCVCC PROPAGATION
DELAY vs. LOAD CAPACITANCE
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
t
PVL-VCC-HL
t
PVL-VCC-LH
0
200
400
600
800
1000
200
400
600
800
LOAD CAPACITANCE (pF)
LOAD CAPACITANCE (pF)
8
Dual-Pair LLT with Charge Pump
and High-ESD Protection
Typical Operating Characteristics (continued)
(V
= 3.6V, V = 3V, C
= 1FF, C
= 2.2FF, C = 0.1FF, connect 0.47FF capacitor between CP1 and CP2, data rate =
BAT
L
VBAT
VCC
VL
1Mbps, T = +25NC, unless otherwise noted.)
A
DRIVING INAVL/INCVL
DRIVING INAVL/INCVL
MAX14569 toc16
MAX14569 toc17
C
/C
= 15pF
C
/C
= 150pF
OUTAVCC OUTCVCC
OUTAVCC OUTCVCC
IN_VL
2V/div
IN_VL
2V/div
OUT_VCC
2V/div
OUT_VCC
2V/div
400ns/div
400ns/div
DRIVING INAVL/INCVL
DRIVING INBVCC/INDVCC
MAX14569 toc19
MAX14569 toc18
C
/C
= 1000pF
OUTAVCC OUTCVCC
IN_VL
2V/div
IN_VCC
2V/div
OUT_VCC
2V/div
OUT_VL
2V/div
C
/C
= 15pF
OUTBVL OUTDVL
400ns/div
400ns/div
9
Dual-Pair LLT with Charge Pump
and High-ESD Protection
Pin Configuration
TOP VIEW
+
V
1
2
3
4
5
6
7
8
16 CP1
L
V
ENAB
ENCD
15
BAT
MAX14569
14 CP2
V
13
INAVL
CC
OUTBVL
INCVL
OUTDVL
GND
12 OUTAVCC
11 INBVCC
10 OUTCVCC
9
INDVCC
QSOP
Pin Description
PIN
NAME
FUNCTION
Logic Supply Voltage, +1.6V to +5.5V. Bypass V to GND with a 0.1FF capacitor placed as close
as possible to the device.
L
1
V
L
Enable Input for A and B Ports. Drive ENAB low for shutdown mode, or drive ENAB high for normal
operation.
2
3
ENAB
ENCD
Enable Input for C and D Ports. Drive ENCD low for shutdown mode, or drive ENCD high for normal
operation.
4
5
INAVL
OUTBVL
INCVL
Input A Port. Referenced to V .
L
Output B Port. Referenced to V .
L
6
Input C Port. Referenced to V .
L
7
OUTDVL
GND
Output D Port. Referenced to V .
L
8
Ground
9
INDVCC
Input D Port. Referenced to V
.
CC
10
11
12
OUTCVCC Output C Port. Referenced to V
.
CC
INBVCC
Input B Port. Referenced to V
.
CC
OUTAVCC Output A Port. Referenced to V
.
CC
Charge-Pump Output. Bypass V
to GND with a 2.2FF ceramic capacitor placed as close as
CC
13
V
CC
possible to the V pin to have high ESD protection on OUTAVCC, INBVCC, OUTCVCC, and
CC
INDVCC pins.
14
15
16
CP2
External Charge-Pump Capacitor Connection
Battery Input, +2.3V to +5.5V. Bypass V
possible to the device.
to GND with a 1FF capacitor placed as close as
BAT
V
BAT
CP1
External Charge-Pump Capacitor Connection
10
Dual-Pair LLT with Charge Pump
and High-ESD Protection
Level Translation
Detailed Description
The MAX14569 is a dedicated dual-pair unidirectional
logic-level translator that is ideal for automatic remote-
For proper operation, ensure that 2.3V P V
P 5.5V,
BAT
1.6V PV P5.5V. The device enters low-power shutdown
L
mode when ENAB = ENCD = GND (see the Functional
Table). In shutdown mode, the INAVL, INBVCC, INCVL,
INDVCC, OUTAVCC and OUTCVCC are in high-imped-
ance mode and the OUTBVL and OUTDVL are pulled
down to GND. The maximum data rate depends heavily
on the load capacitance (see the rise/fall times in the
Typical Operating Characteristics), output impedance of
the driver, and the operating voltage range.
metering applications. Externally applied voltage V
L
and regulated output voltage V
either side of the device.
set the logic levels on
CC
The device boosts the V
supply input voltage to a
BAT
charge-pump-regulated output, V . Logic-high signals
CC
present on the V side of the device appear as a high-
L
voltage logic signals on the V
vice versa.
side of the device and
CC
Output Load Requirements
The device is designed to drive a wide variety of load
types including a high capacitive load. To protect the
The device has two pairs of logic-level translators in
back-to-back configuration: one logic-level translator
from a low voltage to a high voltage and the other logic-
level translator from a high voltage to a low voltage.
V
outputs (OUTAVCC, OUTCVCC) from a harsh
CC
external environment, the V
outputs are ruggedized
CC
The device features an extreme power-saving mode that
reduces supply current to a typical 0.01FA. The device
with a high ESD-capable output structure. When the high
capacitive load is connected to the V output side, the
CC
also features thermal short-circuit protection on the V
CC
current is limited by the charge-pump circuit along with
the output driver impedance. The device is also pro-
tected by the thermal protection.
side for enhanced protection in applications that route
signals externally.
Functional Diagram
Functional Table
INPUTS
DRIVERS OUTPUT EVENTS
V
V
BAT
L
ENAB
ENCD
Device is in shutdown
OUTAVCC, OUTCVCC: high impedance
OUTBVL, OUTDVL: pulldown to GND
V
CHARGE
PUMP
CC
Low
Low
MAX14569
ENAB
V
V
L
CC
OUTAVCC: high impedance
OUTBVL: pulldown to GND
INCVL to OUTCVCC
INAVL
OUTAVCC
INBVCC
Low
High
High
High
Low
INDVCC to OUTDVL
V
V
L
CC
INAVL to OUTAVCC
INBVCC to OUTBVL
OUTCVCC: high impedance
OUTDVL: pulldown to GND
OUTBVL
ENCD
INCVL
V
V
V
V
L
L
CC
CC
OUTCVCC
INDVCC
INAVL to OUTAVCC
INBVCC to OUTBVL
INCVL to OUTCVCC
INDVCC to OUTDVL
High
OUTDVL
GND
11
Dual-Pair LLT with Charge Pump
and High-ESD Protection
discharges encountered during handling and assem-
Shutdown Mode
The device features two enable inputs (ENAB, ENCD)
that place the device into a low-power shutdown mode
when both are driven low. If either ENAB or ENCD is
pulled high, the internal charge pump starts working and
bly. The OUTAVCC, INBVCC, OUTCVCC, INDVCC pins
have extra protection against static electricity. Maxim’s
engineers have developed state-of-the-art structures to
protect these pins against ESD of Q25kV without dam-
age. The ESD structures withstand high ESD in all states:
normal operation, shutdown, and powered down. After
an ESD event, the device keeps working without latchup
or damage.
generates 5V on V . When both ENAB and ENCD are
CC
driven low, the MAX14569 enters shutdown mode and
draws a minimum current from V and V
. To minimize
BAT
L
supply current in shutdown mode, connect INAVL and
INCVL to ground.
ESD protection can be tested in various ways. The
OUTAVCC, INBVCC, OUTCVCC, and INDVCC pins are
characterized for protection to the following limits:
Charge Pump
The internal charge pump provides 5V on V
when
CC
V
is between 2.7V and 4.5V. When V
is between
. The
BAT
U
U
Q25kV using the Human Body Model
BAT
BAT
2.3V and 2.7V, V
output is regulated to 5V as long as the battery voltage
supports it.
is twice the voltage of V
CC
Q15kV using the Air-Gap Discharge Method specified
in IEC 61000-4-2
U
Q12kV using the Contact Discharge Method specified
Thermal Protection
The device features thermal shutdown function neces-
sary to protect the device. When the junction tempera-
ture exceeds +150NC (typ), the charge pump turns off
and OUTAVCC, OUTBVL, OUTCVCC, OUTDVL are low.
This limits the device temperature from rising further.
When the temperature drops 20NC (typ) below +150NC
(typ), the device resumes normal operation.
in IEC 61000-4-2
ESD Test Conditions
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report that documents test
setup, test methodology, and test results.
Human Body Model
Figure 3 shows the Human Body Model, and Figure 4
shows the current waveform it generates when dis-
charged into a low-impedance state. This model consists
of a 100pF capacitor charged to the ESD voltage of inter-
est, which is then discharged into the test device through
a 1.5kI resistor.
Applications Information
Layout Recommendations
Use standard high-speed layout practices when laying
out a board with the device. For example, to minimize
line coupling, place all other signal lines not connected
to the device at least 1x the substrate height of the PCB
away from the input and output lines of the device.
IEC 61000-4-±
The IEC 61000-4-2 standard covers ESD testing and
performance of finished equipment. It does not spe-
cifically refer to integrated circuits. The major difference
between tests done using the Human Body Model and
IEC 61000-4-2 is higher peak current in IEC 61000-4-2,
because series resistance is lower in the IEC 61000-4-2
model. Hence, the ESD withstand voltage measured to
IEC 61000-4-2 is generally lower than that measured
using the Human Body Model. Figure 5 shows the IEC
61000-4-2 model, and Figure 6 shows the current wave-
form for the Q8kV, IEC 61000-4-2, level 4, ESD Contact
Discharge Method.
Power-Supply Decoupling
To reduce ripple and the chance of introducing data
errors, bypass V to ground with a 0.1FF ceramic capac-
L
itor, V
to ground with a 1FF ceramic capacitor, and
BAT
V
CC
to ground with a 2.2FF ceramic capacitor. Place
all capacitors as close as possible to the power-supply
inputs.
±±5ꢀk ESD Protection
As with all Maxim devices, ESD protection structures are
incorporated on all pins to protect against electrostatic
12
Dual-Pair LLT with Charge Pump
and High-ESD Protection
R
C
R
D
R
C
R
D
50MΩ to 100MΩ
330Ω
1MΩ
1500Ω
DISCHARGE
RESISTANCE
DISCHARGE
RESISTANCE
CHARGE CURRENT
LIMIT RESISTOR
CHARGE-CURRENT
LIMIT RESISTOR
HIGH-
VOLTAGE
DC
HIGH-
VOLTAGE
DC
DEVICE
UNDER
TEST
DEVICE
UNDER
TEST
C
s
150pF
STORAGE
CAPACITOR
C
s
100pF
STORAGE
CAPACITOR
SOURCE
SOURCE
Figure 3. Human Body ESD Test Model
Figure 5. IEC 61000-4-2 ESD Test Model
I
100%
90%
I 100%
P
90%
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
I
r
AMPERES
36.8%
10%
0
TIME
0
t
RL
10%
t = 0.7ns to 1ns
t
DL
CURRENT WAVEFORM
r
t
30ns
60ns
Figure 4. Human Body Current Waveform
Figure 6. IEC 61000-4-2 ESD Generator Current Waveform
Chip Information
Pacꢀage Information
For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-“ in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
PROCESS: BiCMOS
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN NO.
16 QSOP
E16+4
21-0055
90-0167
13
Dual-Pair LLT with Charge Pump
and High-ESD Protection
Revision History
REVISION REVISION
DESCRIPTION
PAGES
CHANGED
NUMBER
DATE
0
9/10
Initial release
—
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
14
Maxim Integrated Products, 1±0 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
2010 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.
©
相关型号：
©2020 ICPDF网 联系我们和版权申明