概述
数据手册MAX15070BAUT 概述
7A Sink, 3A Source, 12ns, SOT23 MOSFET Drivers
MAX15070BAUT 数据手册
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PDF下载MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
General Description
Features
The MAX15070A/MAX15070B are high-speed MOSFET
drivers capable of sinking 7A and sourcing 3A peak
currents. The ICs, which are an enhancement over
MAX5048 devices, have inverting and noninverting
inputs that provide greater flexibility in controlling the
MOSFET. They also feature two separate outputs work-
ing in complementary mode, offering flexibility in control-
ling both turn-on and turn-off switching speeds.
S Independent Source and Sink Outputs
S +4V to +14V Single Power-Supply Range
S 7A Peak Sink Current
S 3A Peak Source Current
S Inputs Rated to +14V Regardless of V+ Voltage
S 12ns Propagation Delay
The ICs have internal logic circuitry that prevents shoot-
through during output-state changes. The logic inputs
are protected against voltage spikes up to +16V, regard-
less of V+ voltage. Propagation delay time is minimized
and matched between the inverting and noninverting
inputs. The ICs have a very fast switching time, com-
bined with short propagation delays (12ns typ), making
them ideal for high-frequency circuits. The ICs operate
from a +4V to +14V single power supply and typically
consume 0.5mA of supply current. The MAX15070A has
standard TTL input logic levels, while the MAX15070B
has CMOS-like high-noise-margin (HNM) input logic
levels.
S Matched Delays Between Inverting and
Noninverting Inputs Within 500ps
S HNM or TTL Logic-Level Inputs
S Low-Input Capacitance: 10pF (typ)
S Thermal-Shutdown Protection
S Small SOT23 Package Allows Routing PCB Traces
Underneath
S -40°C to +125°C Operating Temperature Range
Ordering Information
Both ICs are available in a 6-pin SOT23 package and
operate over the -40NC to +125NC temperature range.
INPUT LOGIC
PART
PIN-PACKAGE
LEVELS
Applications
Power MOSFET Switching
Switch-Mode Power Supplies
DC-DC Converters
MAX15070AAUT+
MAX15070AAUT/V+
MAX15070BAUT+
TTL
6 SOT23
6 SOT23
6 SOT23
TTL
HNM
Note: All devices are specified over the -40°C to +125°C
operating temperature range.
+Denotes a lead(Pb)-free/RoHS-compliant package.
/V Denotes an automotive-qualified part.
Motor Control
Power-Supply Modules
Typical Operating Circuit
V+
V+
P_OUT
MAX15070A
MAX15070B
IN+
IN-
N
N_OUT
GND
For pricing, delivery, and ordering information, please contact Maxim Direct
at 1-888-629-4642, or visit Maxim’s website at www.maximintegrated.com.
19-5516; Rev 3; 5/13
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
Operating Temperature Range ...................... -40NC to +125NC
V+, IN+, IN-.......................................................... -0.3V to +16V
N_OUT, P_OUT ...........................................-0.3V to (V+ + 0.3V)
N_OUT Continuous Output Current (Note 1)................. -200mA
P_OUT Continuous Output Current (Note 1) ................ +125mA
Junction Temperature ................................................... +150NC
Storage Temperature Range........................... -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Continuous Power Dissipation (T = +70NC)
A
SOT23 (derate 8.7mW/NC above +70NC).................. 696mW*
*As per JEDEC 51 standard.
Note 1: Continuous output current is limited by the power dissipation of the package.
PACKAGE THERMAL CHARACTERISTICS (Note 2)
SOT23
Junction-to-Ambient Thermal Resistance (B ) ........115NC/W
JA
Junction-to-Case Thermal Resistance (B ) .................. 80NC/W
JC
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-lay-
er board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = +12V, C = 0F, T = T = -40NC to +125NC, unless otherwise noted. Typical values are at T = +25NC. Parameters specified at
L
A
J
A
V+ = +4.5V apply to the MAX15070A only; see Figure 1.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY (V+)
MAX15070A
MAX15070B
V+ rising
4
6
14
14
Input Voltage Range
Undervoltage Lockout
V
V
V
UVLO
3.3
3.45
200
3.6
Undervoltage-Lockout
Hysteresis
mV
Undervoltage Lockout to Output
Rising Delay
V+ rising
V+ falling
100
2
Fs
Fs
Undervoltage Lockout to Output
Falling Delay
V+ = 14V, no switching
0.5
2.3
1
Supply Current
I
mA
V+
V+ = 14V, switching at 1MHz
n-CHANNEL OUTPUT (N_OUT)
T
T
T
T
= +25NC
= +125NC
= +25NC
= +125NC
0.256
0.268
0.32
0.45
0.33
0.465
1.9
V+ = +12V,
A
A
A
A
I
= -100mA
N_OUT
N_OUT Resistance
R
I
N_OUT
V+ = +4.5V,
= -100mA
I
N_OUT
Power-Off Pulldown Resistance
Output Bias Current
V+ = unconnected, I
= -1mA, T = +25NC
1.3
6
kI
FA
A
N_OUT
A
I
V
= V+
11
BIASN
N_OUT
Peak Output Current
I
C = 22nF
L
7.0
PEAKN
2
Maxim Integrated
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V+ = +12V, C = 0F, T = T = -40NC to +125NC, unless otherwise noted. Typical values are at T = +25NC. Parameters specified at
L
A
J
A
V+ = +4.5V apply to MAX15070A only, see Figure 1.) (Note 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
0.88
0.91
MAX
UNITS
p-CHANNEL OUTPUT (P_OUT)
T
A
T
A
T
A
T
A
= +25NC
= +125NC
= +25NC
= +125NC
1.2
1.7
1.25
1.75
1
V+ = +12V,
= 100mA
I
P_OUT
P_OUT Resistance
R
I
P_OUT
V+ = +4.5V,
= 100mA
I
P_OUT
Output Leakage Current
Peak Output Current
I
V
= 0V
0.01
3.0
FA
A
LEAKP
P_OUT
I
C = 22nF
L
PEAKN
LOGIC INPUTS (IN+, IN-)
MAX15070A
MAX15070B
MAX15070A
MAX15070B
MAX15070A
MAX15070B
2.0
Logic-High Input Voltage
Logic-Low Input Voltage
Logic-Input Hysteresis
V
V
V
V
IH
4.25
0.8
2.0
V
IL
0.2
0.9
0.02
10
V
HYS
Logic-Input Leakage Current
Logic-Input Bias Current
Input Capacitance
V
IN+
V
IN+
= V = 0V or V+, MAX15070A
IN-
FA
= V = 0V or V+, MAX15070B
IN-
10
pF
SWITCHING CHARACTERISTICS FOR V+ = +12V (Figure 1)
C = 1nF
6
L
Rise Time
t
C = 5nF
22
36
4
ns
ns
R
L
C = 10nF
L
C = 1nF
L
Fall Time
t
C = 5nF
L
11
17
11
12
2
F
C = 10nF
L
Turn-On Delay Time
Turn-Off Delay Time
Break-Before-Make Time
t
C = 1nF (Note 4)
L
7
7
17
18
ns
ns
ns
D-ON
t
C = 1nF (Note 4)
L
D-OFF
t
BBM
SWITCHING CHARACTERISTICS FOR V+ = +4.5V (MAX15070A only) (Figure 1)
C = 1nF
5
L
Rise Time
t
C = 5nF
16
25
4
ns
ns
R
L
C = 10nF
L
C = 1nF
L
Fall Time
t
C = 5nF
L
10
14
13
14
2
F
C = 10nF
L
Turn-On Delay Time
t
C = 1nF (Note 4)
L
7
7
21
22
ns
ns
ns
D-ON
Turn-Off Delay Time
t
C = 1nF (Note 4)
L
D-OFF
Break-Before-Make Time
THERMAL CHARACTERISTICS
Thermal Shutdown
t
BBM
Temperature rising (Note 4)
(Note 4)
166
13
NC
NC
Thermal-Shutdown Hysteresis
Note 3: Limits are 100% tested at T = +25°C. Limits over operating temperature range are guaranteed through correlation using
A
the statistical quality control (SQC) method.
Note 4: Design guaranteed by bench characterization. Limits are not production tested.
Maxim Integrated
3
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
Typical Operating Characteristics
(C = 1000pF, T = +25NC, unless otherwise noted. See Figure 1.)
L
A
PROPAGATION DELAY (LOW TO HIGH)
vs. SUPPLY VOLTAGE
RISE TIME vs. SUPPLY VOLTAGE
FALL TIME vs. SUPPLY VOLTAGE
18
16
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
T
A
= +85°C
T
A
= +125°C
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
T
A
= +25°C
T
A
= +25°C
TA = -40°C
TA = -40°C
T
A
= 0°C
T
= -40°C
A
T
= 0°C
A
T
A
= 0°C
10
4
6
8
10
12
14
4
6
8
10
12
14
4
6
8
12
14
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
PROPAGATION DELAY (HIGH TO LOW)
vs. SUPPLY VOLTAGE
SUPPLY CURRENT vs. SUPPLY VOLTAGE
SUPPLY CURRENT vs. LOAD CAPACITANCE
20
18
16
14
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
DUTY CYCLE = 50%
1MHz
V+ = 12V
f = 100kHz
DUTY CYCLE = 50%
C = 0
L
T
= +125°C
A
T
= +85°C
A
500kHz
T
A
= +25°C
100kHz
T
= 0°C
A
T
A
= -40°C
75kHz
40kHz
4
6
8
10
12
14
4
6
8
10
12
14
0
400
800
1200
1600
2000
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
LOAD CAPACITANCE (pF)
MAX15070A INPUT THRESHOLD
VOLTAGE vs. SUPPLY VOLTAGE
MAX15070A
SUPPLY CURRENT vs. INPUT VOLTAGE
SUPPLY CURRENT vs. TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.4
1.2
1.0
0.8
0.6
0.4
V+ = 12V
f = 100kHz, C = 0
L
DUTY CYCLE = 50%
INPUT LOW TO HIGH
INPUT HIGH TO LOW
RISING
FALLING
4
6
8
10
12
14
0
1
2
3
4
5
14
-40 -25 -10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
INPUT VOLTAGE (V)
4
Maxim Integrated
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
Typical Operating Characteristics (continued)
(C = 1000pF, T = +25NC, unless otherwise noted. See Figure 1.)
L
A
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, C = 5000pF)
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, C = 10,000pF)
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, C = 5000pF)
MAX15070A toc12
L
L
L
MAX15070A toc10
MAX15070A toc11
V
V
IN+
IN+
2V/div
2V/div
V
IN+
2V/div
V
V
OUTPUT
OUTPUT
2V/div
2V/div
V
OUTPUT
2V/div
20ns/div
20ns/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
INPUT VOLTAGE vs. OUTPUT VOLTAGE
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +4V, C = 10,000pF)
(V+ = +14V, C = 5000pF)
(V+ = +14V, C = 10,000pF)
L
MAX15070A toc15
L
L
MAX15070A toc13
MAX15070A toc14
V
V
IN+
IN+
5V/div
5V/div
V
IN+
2V/div
V
V
OUTPUT
OUTPUT
5V/div
5V/div
V
OUTPUT
2V/div
20ns/div
20ns/div
20ns/div
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +14V, C = 5000pF)
INPUT VOLTAGE vs. OUTPUT VOLTAGE
(V+ = +14V, C = 10,000pF)
L
L
MAX15070A toc16
MAX15070A toc17
V
V
IN+
IN+
5V/div
5V/div
V
V
OUTPUT
OUTPUT
5V/div
5V/div
20ns/div
20ns/div
Maxim Integrated
5
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
Pin Configuration
TOP VIEW
+
6
5
4
V+
IN+
1
2
MAX15070A
MAX15070B
GND
P_OUT
N_OUT
IN-
3
SOT23
Pin Description
PIN
1
NAME
IN+
FUNCTION
Noninverting Logic Input. Connect IN+ to V+ when not used.
Ground
2
GND
IN-
3
Inverting Logic Input. Connect IN- to GND when not used.
4
N_OUT
P_OUT
V+
Driver Sink Output. Open-drain n-channel output. Sinks current for power MOSFET turn-off.
Driver Source Output. Open-drain p-channel output. Sources current for power MOSFET turn-on.
Power-Supply Input. Bypass V+ to GND with a 1FF low-ESR ceramic capacitor.
5
6
Functional Diagram
V+
P
BREAK-
BEFORE-
MAKE
P_OUT
N_OUT
IN-
IN+
CONTROL
N
MAX15070A
MAX15070B
GND
6
Maxim Integrated
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
IN+
V
IH
V
IL
P_OUT AND
N_OUT
CONNECTED
TOGETHER
90%
10%
t
t
F
t
t
R
D-OFF
D-ON
TIMING DIAGRAM
V+
V+
MAX15070A
MAX15070B
P_OUT
N_OUT
INPUT
IN+
IN-
OUTPUT
GND
C
L
TEST CIRCUIT
Figure 1. Timing Diagram and Test Circuit
while the MAX15070B has HNM (CMOS-like) logic-level
thresholds (see the Electrical Characteristics). Connect
IN+ to V+ or IN- to GND when not used. Alternatively,
the unused input can be used as an on/off control input
(Table 1).
Detailed Description
Logic Inputs
The MAX15070A/MAX15070Bs’ logic inputs are pro-
tected against voltage spikes up to +16V, regardless of
the V+ voltage. The low 10pF input capacitance of the
inputs reduces loading and increases switching speed.
These ICs have two inputs that give the user greater
flexibility in controlling the MOSFET. Table 1 shows all
possible input combinations. The difference between the
MAX15070A and the MAX15070B is the input threshold
voltage. The MAX15070A has TTL logic-level thresholds,
Undervoltage Lockout (UVLO)
When V+ is below the UVLO threshold, the n-channel is
on and the p-channel is off, independent of the state of
the inputs. The UVLO is typically 3.45V with 200mV typi-
cal hysteresis to avoid chattering. A typical falling delay
of 2Fs makes the UVLO immune to narrow negative tran-
sients in noisy environments.
Table 1. Truth Table
Driver Outputs
The ICs provide two separate outputs. One is an open-
drain p-channel, the other an open-drain n-channel. They
have distinct current sourcing/sinking capabilities to inde-
pendently control the rise and fall times of the MOSFET
gate. Add a resistor in series with P_OUT/N_OUT to slow
the corresponding rise/fall time of the MOSFET gate.
IN+
L
IN-
L
p-CHANNEL
n-CHANNEL
Off
Off
On
Off
On
On
Off
On
L
H
L
H
H
H
L = Logic-low, H = Logic-high.
Maxim Integrated
7
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
Layout Information
Applications Information
The ICs’ MOSFET drivers source and sink large currents
to create very fast rise and fall edges at the gate of the
switching MOSFET. The high di/dt can cause unaccept-
able ringing if the trace lengths and impedances are not
well controlled. The following PCB layout guidelines are
recommended when designing with the ICs:
Supply Bypassing, Device
Grounding, and Placement
Ample supply bypassing and device grounding are
extremely important because when large external capac-
itive loads are driven, the peak current at the V+ pin can
approach 3A, while at the GND pin, the peak current can
•ꢀ Place one or more 1FF decoupling ceramic
capacitor(s) from V+ to GND as close as possible to
the IC. At least one storage capacitor of 10FF (min)
should be located on the PCB with a low resistance
path to the V+ pin of the ICs. There are two AC cur-
rent loops formed between the IC and the gate of
the MOSFET being driven. The MOSFET looks like
a large capacitance from gate to source when the
gate is being pulled low. The active current loop is
from N_OUT of the ICs to the MOSFET gate to the
MOSFET source and to GND of the ICs. When the
gate of the MOSFET is being pulled high, the active
current loop is from P_OUT of the ICs to the MOSFET
gate to the MOSFET source to the GND terminal of
the decoupling capacitor to the V+ terminal of the
decoupling capacitor and to the V+ terminal of the
ICs. While the charging current loop is important, the
discharging current loop is critical. It is important to
minimize the physical distance and the impedance
in these AC current paths.
approach 7A. V
drops and ground shifts are forms of
CC
negative feedback for inverters and, if excessive, can
cause multiple switching when the IN- input is used and
the input slew rate is low. The device driving the input
should be referenced to the ICs’ GND pin, especially
when the IN- input is used. Ground shifts due to insuffi-
cient device grounding can disturb other circuits sharing
the same AC ground return path. Any series inductance
in the V+, P_OUT, N_OUT, and/or GND paths can cause
oscillations due to the very high di/dt that results when
the ICs are switched with any capacitive load. A 1FF
or larger value ceramic capacitor is recommended,
bypassing V+ to GND and placed as close as possible
to the pins. When driving very large loads (e.g., 10nF)
at minimum rise time, 10FF or more of parallel storage
capacitance is recommended. A ground plane is highly
recommended to minimize ground return resistance and
series inductance. Care should be taken to place the
ICs as close as possible to the external MOSFET being
driven to further minimize board inductance and AC path
resistance.
•ꢀ In a multilayer PCB, the component surface layer sur-
rounding the ICs should consist of a GND plane con-
taining the discharging and charging current loops.
Power Dissipation
Power dissipation of the ICs consists of three compo-
nents, caused by the quiescent current, capacitive
charge and discharge of internal nodes, and the output
current (either capacitive or resistive load). The sum of
these components must be kept below the maximum
power-dissipation limit of the package at the operating
temperature.
Chip Information
Process: BiCMOS
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maximintegrated.com/packages. Note
that a “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character,
but the drawing pertains to the package regardless of RoHS
status.
The quiescent current is 0.5mA typical. The current
required to charge and discharge the internal nodes
is frequency dependent (see the Typical Operating
Characteristics).
For capacitive loads, the total power dissipation is
approximately:
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN NO.
P = C
x (V+) 2 x FREQ
LOAD
6 SOT23
U6+1
21-0058
90-0175
where C
is the capacitive load, V+ is the supply
LOAD
voltage, and FREQ is the switching frequency.
8
Maxim Integrated
MAX15070A/MAX15070B
7A Sink, 3A Source,
12ns, SOT23 MOSFET Drivers
Revision History
REVISION REVISION
PAGES
DESCRIPTION
CHANGED
NUMBER
DATE
11/10
11/11
8/12
0
1
2
3
Initial release
—
Added MAX15070AAVT/V+ to data sheet
Removed Evaluation Kit Available banner
Updated Ordering Information
1, 2, 3, 8, 9
1
1
5/13
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits) shown in the Electrical
Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
Maxim Integrated 160 Rio Robles, San Jose, CA 95134 USA 1-408-601-1000
9
©
2013 Maxim Integrated Products, Inc.
The Maxim logo and Maxim Integrated are trademarks of Maxim Integrated Products, Inc.
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| MAX1508ETA-T | MAXIM | Power Supply Support Circuit, Fixed, 1 Channel, BICMOS, 3 X 3 MM, 0.80 MM HEIGHT, MO-229WEEC, TDFN-8 | 获取价格 |
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| MAX1508YETA | MAXIM | Linear Li Battery Charger with Integrated Pass FET, Thermal Regulation, and ACOKin 3mm x 3mm TDFN | 获取价格 |
|
| MAX1508YETA-T | MAXIM | Power Supply Support Circuit, Fixed, 1 Channel, BICMOS, 3 X 3 MM, 0.80 MM HEIGHT, MO-229WEEC, TDFN-8 | 获取价格 |
|
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