MAX15096A [MAXIM]
Integrated Hot-Swap/Electronic;
| 型号： | MAX15096A |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Integrated Hot-Swap/Electronic |
| 文件： | 总15页 (文件大小：678K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EVALUATION KIT AVAILABLE
MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/Electronic
Circuit Breaker
General Description
Features
The MAX15096/MAX15096A/MAX15096D ICs are inte-
grated solutions for hot-swap applications requiring the
safe insertion and removal of circuit line cards from a live
backplane. They can also be used as electronics circuit
breaker for hard drive and solid-state drive and fans. The
devices integrate a hot-swap controller, 12mΩ (typ) power
MOSFET, and an electronic circuit-breaker protection in a
single package.
● 2.7V to 18V Operating Voltage Range
● 12mΩ (typ) Internal Power MOSFET
● 6A (typ) Load-Current Capability
● ±10% Circuit-Breaker Threshold Accuracy
● Programmable Inrush Current Control Under SOA
Operation
● Adjustable Circuit-Breaker Current/Current-Limit
The devices are designed for protection of 2.7V to 18V
supply voltages. These devices implement a foldback
current limit during startup to control inrush current, lower-
ing di/dt and keeping the MOSFET operating under safe
operating area (SOA) conditions. After the startup cycle
is complete, on-chip comparators provide VariableSpeed/
BiLevel™ protection against short-circuit and overcur-
rent faults, and immunity against system noise and load
transients. The load is disconnected in the event of a fault
condition. The devices are factory calibrated to deliver
accurate overcurrent protection with ±10% accuracy.
During a fault condition, PG goes low and the devices
latch off (MAX15096) or automatic retry (MAX15096A);
the output could also be discharged after a fault event
(MAX15096D).
Threshold
● Programmable Slew-Rate Control
● Variable-Speed Circuit-Breaker Response
● Thermal Protection
● Programmable Overvoltage Protection and
Undervoltage-Lockout Threshold
● Latchoff or Automatic Retry Options
● Drive Present Signal Input
● Enable Input (EN)
● IN-to-OUT Short-Circuit Detection
● Open-Drain PG Output
● Output Discharge After a Fault Event
The devices feature an IN-to-OUT short-circuit detection
before startup. The devices provide a power-MOSFET
GATE pin to program the slew rate during startup by
adding an external capacitor. The devices have an under-
voltage/overvoltage input pin (UVOV) that can detect an
undervoltage/overvoltage fault and disconnect the IN from
the OUT. Additional features include internal overtem-
perature protection and a power-good output (PG).
(MAX15096D Only)
● Programmable Additional Delay (2μs max) to Fast-
Comparator Response Time Through External
Resistor on TIMER Pin
Applications
● Blade Servers
● Server I/O Cards
● RAID Systems
● Disk Drive Power
● StorageApplications
● IndustrialApplications
The devices are available in a 16-bump, 2mm x 2mm
wafer-level package (WLP) and are rated over the -40°C
to +105°C extended temperature range.
Ordering Information appears at end of data sheet.
VariableSpeed/BiLevel is a trademark of Maxim Integrated
Products, Inc.
19-7304; Rev 0; 3/14
MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Absolute Maximum Ratings
V
to GND ............................................................-0.3V to 20V
Continuous Power Dissipation (T = +70°C)
CC
A
IN to GND..............................................................-0.3V to +20V
PG, PRSNT to GND..............................................-0.3V to +20V
16-bump WLP (derate 20.4mW/°C above +70°C) ....1633mW
Operating Temperature Range......................... -40°C to +105°C
Junction Temperature..................................................... +150°C
Storage Temperature Range............................ -60°C to +150°C
Lead Temperature (soldering, 10s) ................................ +300°C
Soldering Temperature (reflow)...................................... +260°C
OUT to GND...............................................-0.3V to (V + 0.3V)
IN
GATE to OUT ..........................................................-0.3V to +6V
EN, UVOV to GND..................................................-0.3V to +6V
TIMER, CB to GND................................-0.3V to (V
+ 0.3V)
REG
REG to GND............................-0.3V to min (+6V, (V
+ 0.3V))
CC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
Junction-to-Ambient Thermal Resistance (θ )...................49°C/W
JA
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V = V
= 2.7V to 18V, T = T = -40°C to +105°C, unless otherwise noted. Typical values are at V = 12V, R
= 10.5kΩ, and
IN
CC
A
J
IN
CB
T = +25°C.) (Note 2)
A
PARAMETER
POWER SUPPLIES
Operating Range
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
V
2.7
2.7
18
V
CC
CC
IN Operating Range
V
18
V
IN
V
V
= V
= V
= 2.7V to 18V, enable
= 2.7V to 18V, disable
0.58
0.59
3.3
0.9
mA
mA
IN
IN
CC
V
Supply Current
I
CC
CC
CC
R
= 41.2kΩ, no load
= 10.5kΩ, no load
rising
3.8
1.8
CB
CB
CC
IN Supply Current
I
mA
IN
R
1.3
V
V
Default Undervoltage Lockout
Default Undervoltage-Lockout
V
V
2.35
2.5
2.65
V
V
CC
CC
UVLO
V
0.1
UVLO_HYS
Hysteresis
REG Regulator Voltage
UV Turn-On Threshold
UV Turn-On Threshold Hysteresis
OV Turn-On Threshold
OV Turn-On Threshold Hysteresis
UVOV Input Leakage Current
CURRENT LIMIT
V
No load, V
> 4V
CC
3
3.3
0.55
50
3.6
V
V
REG
V
V
V
V
V
V
rising
falling
rising
falling
0.536
0.564
UV_TH
UVOV
UVOV
UVOV
UVOV
UVOV
V
mV
V
UV_HYS
V
1.199
-1
1.23
50
1.261
+1
OV_TH
V
mV
OV_HYS
I
= 0 to 5.5V
µA
LEAK
R
R
= 41.2kΩ
= 10.5kΩ
5.4
6
6.6
CB
CB
Circuit-Breaker Accuracy (Note 3)
I
V
= 12V
IN
A
CB_TH
1.14
1.27
1.40
R
= 10.5kΩ to 21.5kΩ, compared to
CB
nominal current-limit value, V = V
= 8V to 15V
-10
-10
+10
+10
IN
CC
Circuit-Breaker Accuracy Deviation
(Note 4)
%
R
= 21.5kΩ to 41.2kΩ, compared to
CB
nominal current-limit value
Maxim Integrated
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Electrical Characteristics (continued)
(V = V
= 2.7V to 18V, T = T = -40°C to +105°C, unless otherwise noted. Typical values are at V = 12V, R
= 10.5kΩ, and
IN
CC
A
J
IN
CB
T = +25°C.) (Note 2)
A
PARAMETER
SYMBOL
CONDITIONS
0.6% overcurrent
MIN
TYP
2.7
200
12
MAX
UNITS
ms
Slow-Comparator Response Time
t
SCD
(Note 5)
30% overcurrent
In power-on mode
µs
CB Source Current
I
µA
THCB_NORM
0.5 x
CB_TH
1.5 x
Maximum Current Limit During
Startup
I
(see Figure 2)
A
A
LIM
I
Fast-Comparator Threshold
I
FC_TH
I
CB_TH
200
Fast-Comparator Response Time
Additional Delay Time by TIMER
t
ns
µs
FCD
t
R
= open
TIMER
2
AFCD
Minimum CB Voltage Reference
During Foldback (Note 6)
V
V
V
- V
> 10V, R = 41.2kΩ
CB
60
mV
mV
THCB_MIN
IN
IN
OUT
OUT
Maximum CB Voltage Reference
During Foldback (Note 6)
V
- V
< 2V, R
= 41.2kΩ
250
THCB_MAX
CB
TIMING
Startup Maximum Time Duration
Autoretry Delay Time
Output Short Detection at Startup
MOSFET
t
43
52
3.4
61
ms
s
SU
t
MAX15096A/MAX15096D only
RESTART
t
10.4
13.2
15.6
ms
SHORT
T
T
= +25°C
12
18
25
A
A
Total On-Resistance
R
mΩ
μA
ON
= -40°C to +105°C
GATE Charge Current
OUTPUTS
I
4.8
5.9
7.1
GATE
PG Output Low Voltage
PG Output High-Leakage Current
DISCHARGE
V
Low-impedance state, I
= +5mA
PG
0.4
V
OL
I
High-impedance state, V
= 16V
PG
1
μA
OH
V
V
< 7.1V (MAX15096D only)
≥ 7.1V to 18V
50
100
160
OUT
OUT
Discharge Current After PG
Deasserted
I
mA
710mW/
DISCHARGE
(MAX15096D only)
V
OUT
PG THRESHOLD
0.9 x
PG Threshold
V
V
= 12V
IN
V
ms
V
PG
V
IN
From V
V
> V
and
OUT
PG
PG Assertion Delay
t
12
16
20
PG
- V
> 3V
GATE
OUT
0.9 x
OUT-to-IN Short-Circuit Detection
Threshold
V
Measured at V
Measured at V
IOSHT
OUT
V
IN
0.5 x
OUT Preload Threshold
V
V
PL
OUT
V
IN
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Electrical Characteristics (continued)
(V = V
= 2.7V to 18V, T = T = -40°C to +105°C, unless otherwise noted. Typical values are at V = 12V, R
= 10.5kΩ, and
IN
CC
A
J
IN
CB
T = +25°C.) (Note 2)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
0.95
0.92
TYP
MAX
UNITS
INPUTS
Input Logic Threshold EN
Threshold Hysteresis EN
V
Rising
Falling
Falling
Rising
1
50
1.05
V
mV
V
EN_TH
V
EN_TH_HYS
Input Logic Threshold PRSNT
Threshold Hysteresis PRSNT
EN Bias Current
V
0.97
50
1.02
PRSNT_TH
V
mV
μA
μA
μs
μs
PRSNT_TH_HYS
I
V
V
= 0 or 5.5V
1
1
EN_BIAS
EN
= 0 or 18V
PRSNT
PRSNT Input Bias Current
EN Deglitch Time
I
PRSNT_BIAS
t
100
EN_DEG
PRSNT High-to-Low Deglitch Time
THERMAL SHUTDOWN
Thermal Shutdown
t
400
PRSNT_DEG
TSD
T rising
150
20
°C
°C
J
Thermal Shutdown Hysteresis
T falling
J
Note 2: All devices are 100% production tested at T = +25°C. Limits over temperature are guaranteed by design.
A
Note 3: 41.2kΩ is the maximum allowed external resistance value to be connected at the CB pin to GND for safe operation. All
devices are tested with 10.5kΩ, the parameter specified at R = 41.2kΩ is guaranteed by bench characterization and cor-
CB
relation, with respect to the tested parameter at R
= 10.5kΩ. The formula that describes the relationship between R
CB
CB
and the circuit-breaker current threshold is: I
= R /6510)(Ω/A) - 0.34A.
CB
CB
Note 4: Guaranteed by desing and not production tested.
Note 5: The current-limit slow-comparator response time is weighed against the amount of overcurrent so the higher the
overcurrent condition, the faster the response time.
Note 6: Foldback is active during the startup phase so the internal power MOSFET operates within SOA.
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Typical Operating Characteristics
(V = V
= 2.7V to 18V, T = T = -40°C to +85°C, unless otherwise noted. Typical values are at V = 12V, R
= 10.5kΩ, and
IN
CC
A
J
IN
CB
T = +25°C.)
A
CIRCUIT BREAKER THRESHOLD
vs. CIRCUIT BREAKER
REISISTANCE
SUPPLY CURRENT
vs. TEMPERATURE
CIRCUIT BREAKER THRESHOLD
vs. TEMPERATURE
toc01
toc02
toc03
5.0
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
9
8
7
6
5
4
3
2
1
0
VIN = VCC = 12V
RCB = 41.2kΩ
VIN = VCC = 12V
VIN = VCC = 12V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IIN
RCB = 41.2kΩ
RCB = 30kΩ
RCB = 20kΩ
ICC
RCB = 10.5kΩ
-40
-15
10
35
60
85
10
15
20
25
30
35
40
-40
-15
10
35
60
85
CIRCUIT BREAKER RESISTANCE (kΩ)
TEMPERATURE (°C)
TEMPERATURE (°C)
ON-RESISTANCE
vs. TEMPERATURE
UV TURN-ON WAVEFORMS
toc05
toc04
18
16
14
12
10
8
VIN = VCC = 12V
ILOAD = 1A
CGATE
5.6nF
=
500mV/
div
VUV
5V/div
VOUT
VPG
1V/div
2A/div
ILOAD
10ms/div
-40
-15
10
35
60
85
TEMPERATURE (°C)
FAULT-SHUTDOWN WAVEFORMS
OVERLOAD (SLOW TRIP)
UV TURN-OFF WAVEFORMStoc06
toc07
CGATE
5.6nF
=
500mV/
div
10V/div
5A/div
VUV
VOUT
10V/div
ILOAD
VOUT
1V/div
2A/div
VPG
VPG
10V/div
10V/div
ILOAD
VGATE
10ms/div
1ms/div
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Typical Operating Characteristics (continued)
(V = V
= 2.7V to 18V, T = T = -40°C to +85°C, unless otherwise noted. Typical values are at V = 12V, R
= 10.5kΩ, and
IN
CC
A
J
IN
CB
T = +25°C.)
A
UV RISING/FALLING
THRESHOLD VOLTAGE
vs. TEMPERATURE
FAULT-SHUTDOWN WAVEFORMS
OVERLOAD (SHORT CIRCUIT)
PG ASSERTION DELAY
toc08
toc10
toc09
0.56
0.55
0.54
0.53
0.52
0.51
0.50
VIN = VCC = 12V
CGATE
5.6nF
=
500mV/
div
10V/div
10A/div
VOUT
VUV
VUV RISING
5V/div
VUV
FALLING
ILOAD
VOUT
500mV/
div
10V/div
20V/div
VPG
VPG
VGATE
400µs/div
-40
-15
10
35
60
85
10ms/div
TEMPERATURE (°C)
CIRCUIT BREAKER THRESHOLD
TIME vs. OVERCURRENT
AUTORETRY
FUNCTIONALITY
FAST COMPARATOR DELAY
vs. TEMPERATURE
toc11
toc12
toc13
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.5
CLOAD = 620nF
VIN = VCC
12V
=
VIN = VCC = 12V
RTIMER = OPEN
VIN
10V/div
5V/div
3.0
2.5
2.0
1.5
1.0
0.5
0.0
RTIMER = 87.3kΩ
VOUT
RTIMER = 43.67kΩ
RTIMER = 20.84kΩ
VGATE
10V/div
5A/div
RTIMER = 0Ω
RTIMER = 10.9kΩ
ILOAD
0
5
10
15
20
25
30
1s/div
-40
-15
10
35
60
85
OVERCURRENT(%)
TEMPERATURE (°C)
OUTPUT DISCHARGE BEHAVIOR
toc14
MAX15096D ONLY
COUT
1060µF
=
VOUT
VIN
2V/div
10V/div
VPG
10V/div
5V/div
VGATE
2ms/div
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Bump Configuration
MAX15096
MAX15096A
MAX15096D
TOP VIEW
(BUMP SIDE DOWN)
1
2
3
4
+
A
VCC
CB
PG
IN
TIMER
IN
UVOV
IN
B
C
D
GND
REG
OUT
GATE
OUT
EN
OUT
PRSNT
WLP
(2mm x 2mm)
Bump Description
BUMP
NAME
FUNCTION
Power-Supply Input. Connect V
to a voltage between 2.7V and 18V. Connect a Schottky diode (or 10Ω
CC
V
CC
V
resistor) from IN to
, and a 1µF bypass capacitor to GND to guarantee full operation in the event
A1
CC
V
IN
collapses during a strong short from OUT to GND.
Power-Good Output. PG is an open-drain, active-high output. PG pulls low until the internal power
MOSFET is fully enhanced.
PG
A2
A3
A4
B1
Timing Input. Connect a resistor from TIMER to GND to program the maximum time the part is allowed
to remain in current limit. See the TIMER section. If TIMER is not connected, the parasitic capacitance
between TIMER and GND must be less than 10pF.
TIMER
UVOV
CB
Undervoltage and Overvoltage Threshold Pin. UVOV sets the under/overvoltage threshold. See the Setting
the Undervoltage/Overvoltage Threshold section.
Current-Limit Threshold Set. Connect a resistor from CB to GND to set the circuit-breaker threshold. Maximum
value of 41.2kΩ can be accepted for safe operation. Having the CB pin connected to GND sets the circuit-
breaker threshold at 0A.
Supply Voltage Input. IN is connected to the drain of the internal 12mΩ (typ) MOSFET. Bypass IN with a
transient voltage-suppressor diode to GND for clamping inductive kick transients in the case of fast output
short circuit to GND.
B2–B4
IN
C1
GND
OUT
Ground
C2–C4
Load Output. Source of the internal power MOSFET.
Internal Regulator Output. Bypass to ground with a 1µF capacitor. Do not power external circuitry using the
REG output.
D1
REG
Gate of Internal MOSFET. During startup, a 5.9µA (typ) current is sourced to enhance the internal MOSFET
with a 10V/ms slew rate. Connect an external capacitance from GATE to GND to reduce the output slew
rate during startup.
D2
GATE
D3
EN
Active-High Enable Comparator Input. Pulling EN high enables the output if PRSNT is held low.
Active-Low Present-Detect Logic Input. Pulling PRSNT to GND enables the output if EN is high.
D4
PRSNT
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Block Diagram
ILOAD
MPOW
IN
OUT
VCC
100mA
CHARGE PUMP
IREF
MS1
(MAX15096D
ONLY)
IGATE
MAX15096
MAX15096A
MAX15096D
GATE
CB_SLOW_COMP
TEMP
SENSE
CONTROL
LOGIC
IPD
2x ISLEW
REF1
UVOV
FAST_COMP
STARTUP
CONTROL
REF2
GATE
GATE_OK
EN
PG
VCC
1.25V
LDO
REGULATOR
REFERENCE
GENERATOR
0.9 x VIN
PRSNT
12µA
CB
1V
TIMER
REG
GND
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Timing Diagram
IN
V
TH_OV
V
TH_UV
UVOV
REG
V
TH_REG
PRSNT#
EN
3V
GATE-OUT
0.9 x V
IN
OUT
PG
DISCHARGING
(MAX15096D)
I
DISCHARGE
SYSTEM IDLE TIME
100µs DEBOUNCING TIME
t
t
t
t
3
1
0
2
t
4
100µs FILTER TIME
Table 1. Timing
TIMING PARAMETER
MIN
—
TYP
400
100
16
MAX
—
UNITS
μs
t
t
t
t
t
0
1
2
3
4
—
—
μs
12
—
20
—
ms
μs
100
0.5
—
—
μs
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
1.23V. An external resistive divider from IN to UVOV and
ground provide the flexibility to select the undervoltage/
overvoltage-lockout threshold to the desired value. See
Figure 1 and the Setting the Undervoltage/Overvoltage
Threshold section in the Applications Information section.
Detailed Description
Enable Logic and Undervoltage/
Overvoltage-Lockout Threshold
The supply output can become active only after all the
following events have occurred:
Startup
● IN is within the UVOV window
Once the devices’ output is enabled, the device pro-
vides controlled application of power to the load. The
voltage at OUT begins to rise at approximately 10V/ms
default until the programmed circuit-breaker current level
is reached, while the devices actively limit the inrush
currentatthecircuit-breakersetting.Anexternalcapacitance
connected to the GATE pin allows the user to program
the slew rate to a value lower than the default. The inrush
current can be programmed by appropriate selection of
● V
is above its UVLO threshold
CC
● EN meets its enable threshold for more than 100μs
● PRSNT is low for more than 400µs
The MAX15096 devices enable the outputs as shown in
Table 1. The devices are ready to drive the output when
the V
devices turn on the output when V
is higher than 0.55V (V
supply rises above the V
threshold. The
CC
UVLO
> V
, V
UVLO UVOV
CC
) and less than 1.23V
UV_TH
R
. During startup, a foldback current limit is active
CB
(V
). The devices turn off the output when V
OV_TH
UVOV
rises above
UVOV
to protect the internal MOSFET to operate within safe
operating area. (Figure 2).
falls below (0.55V - V
) or V
UV_HYS
Table 2. Output Enable Truth Table
POWER SUPPLY
PRECISION ANALOG INPUT
OUT
V
UVLO
UVP
OVP
CC
V
V
> V
V
> V
X
V
< V
X
On
Off
Off
Off
CC
UVLO
UVOV
UV_TH
UVOV
OV_TH
< V
X
CC
UVLO
V
< (V
- V )
UV_HYS
X
UVOV
UV_TH
X
X
V
> V
UVOV
OV_TH
X = Don’t care.
V
V
= 0.55V (typ).
= 1.23V (typ).
UV_TH
OV_TH
IINRUSH
MAX15096
MAX15096A
MAX15096D
3A
RCB = 42.1kΩ
IN
R1
REF1
UVOV
CONTROL
LOGIC
R2
RCB = 10.5kΩ
0.64A
0.5A
REF2
GND
0.1A
VIN - VOUT
2V
10V
Figure 1. Undervoltage/Overvoltage Threshold Setting
Figure 2. Startup Inrush Current Foldback Characteristics
Maxim Integrated
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
An internal 52ms (typ) timer starts counting when the
device enters startup phase. The devices complete
startup phase and enter normal operation mode if the volt-
Enable Input (EN)
The devices allow for enabling the MOSFET in an active-
high configuration. When all other enabling conditions
are verified and the EN pin is at a logic-high level, the
MOSFET is enabled. Similarly, when the EN pin is at a
logic-low level, the MOSFET is disabled.
age at OUT rises above the preload threshold (0.9 x V )
IN
and (V
- V
) > 3V. An open-drain power-good
OUT
GATE
output (PG) goes high impedance 16ms after the startup
successfully completes. The thermal-protection circuit is
always active and the internal MOSFET is immediately
turned off so thermal-shutdown threshold condition can
be reached.
Charge Pump
An integrated charge pump provides the gate-drive volt-
age for the internal power MOSFET. The charge pump
generates the proper gate-drive voltage above V to fully
enhance the internal power MOSFET and guarantee low
IN
If the startup is not successful because the output is
shorted or the load is too high (OUT voltage < 1V), the
devices turn off the hot-swap switch after the output short
R
operation during normal state condition.
ON
detection at startup t
(13.2ms) elapses.
During startup, the internal charge pump drives the GATE
of the MOSFET with a 5.9μA current to enhance the
internal MOSFET with 10V/ms slew rate. Connect an
SHORT
VariableSpeed/BiLevel-Fault Protection
VariableSpeed/BiLevel-fault protection incorporates com-
parators with different thresholds and response times to
monitor the load current (Figure 3). Protection is provided
in normal operation (after the startup period has expired)
by discharging the MOSFET gate in response to a fault
condition. During a fault condition, the MAX15096A enters
an autoretry mode while the MAX15096 latches off (see
the Autoretry and Latchoff Fault Management section).
external capacitor (C
the output slew rate during startup. C
calculated according to the formula below:
) from GATE to GND to reduce
GATE
can be
GATE
C
= (I
x Δt)/ΔV
GATE GATE
GATE
where I
is 5.9μA (typ), Δt is the desired slew rate
GATE
time, and the 5V of ΔV
the internal MOSFET at turn-on.
is the voltage at the gate of
GATE
SLOW
COMPARATOR
2.7ms
FAST
COMPARATOR
200ns
0.6%
30%
50%
OVERCURRENT
OVERCURRENT OVERCURRENT
OUT CURRENT
Figure 3. VariableSpeed/BiLevel Response
Maxim Integrated
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
● PRSNT goes above its threshold
Circuit-Breaker Comparator
and Current Limit
● OV is triggered
The current through the internal power MOSFET is com-
pared to a circuit-breaker threshold. An external resistor
between CB and ground sets this threshold according to
the following formula:
Power-Good (PG) Delay
The devices feature an open-drain, power-good output
that asserts after t
delay, indicating that OUT voltage
PG
has reached (0.9 x V ) voltage and (V
- V ) > 3V.
IN
GATE
OUT
I
= (R /6501)(A/Ω) - 0.34A
CB
CB
REG
where I
is in amps and R
(the resistor between CB
CB
CB
and ground) is in ohms.
The devices include a linear regulator that outputs 3.3V
at REG. REG provides power to the internal circuit blocks
of the devices and must not be loaded externally (except
a resistor > 50kΩ connected from REG to EN). REG
requires a 1µF capacitor to ground for proper operation.
The circuit-breaker comparator is designed so that the
load current can exceed the threshold for some amount
of time before tripping. The time delay varies inversely
with the overdrive above the threshold. The greater the
overcurrent condition, the faster the response time,
allowing the devices to tolerate load transients and noise
near the circuit-breaker threshold. The maximum allowed
external resistor value is 41.2kΩ, which corresponds to a
6A CB threshold setting. Programming the CB threshold
to a value higher than 6A could cause unsafe operating
conditions, resulting in damage to the device.
Output Discharging
The discharge FET is active when the output is disabled
or under fault event. In this event, the hot-swap is off
and the output is on the way down. The discharging is
triggered after the main FET has completely turned off.
The maximum output capacitance is approximately
1000µF. The voltage could be up to 18V. Ideally, it
discharges the output capacitor in constant power mode
(710mW typ) to ensure the voltage rail is below 0.3V
within 2s or less time.
The devices also feature catastrophic short-circuit
protection. During normal operation, if OUT is shorted
directly to ground, a fast protection circuit forces the
gate of the internal MOSFET to discharge quickly and
disconnect the output from the input.
TIMER
Connect a resistor from the TIMER pin to the GND pin to
program the fast-trip response time. This time is the sum
of the internal fast-comparator propagation delay (less
than 200ns typ) plus an additional delay set by the exter-
nal resistor connected from TIMER to ground. Choosing
different resistance values, it is possible to change the
value of additional delay. If the TIMER pin is connected
to REG, the total response time is less than 200ns (typ).
Autoretry and Latchoff Fault Management
During a fault condition, the devices turn off the internal
MOSFET, disconnecting the output from the input. The
MAX15096A enters an autoretry mode and restarts after
t
(3.4s typ.) time delay elapses.
RESTART
The MAX15096 latches off and remains off until the
enable logic is cycled off and on after a certain delay. The
delay prevents the latchoff device to restart and operate
with unsafe power-dissipation duty cycle. See the Timing
diagram and Table 1 for delay values.
Additional delay is disabled also during the startup phase
or after a short-circuit event (V
< 90% V ). Be careful
OUT
IN
about additional delay settings related to a short event.
Latchoff Reset
The latchoff could be reset if any one of the following
happens:
Additional delay can be calculated using the following
formula:
-03
Additional_Delay (µs) = R
(kΩ) x 22.9E
TIMER
● V
is below its UVLO threshold
CC
Maximum additional delay time is set to 2µs. Table 3 pro-
vides additional delay settings.
● EN is disabled for longer than 100μs
● UV is triggered
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MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Table 3. Additional Delay Settings
OPTION
R
(kΩ)
RESPONSE TIME (μs)
TIMER
1
2
3
4
5
6
Open
2
2
86.6
43.2
21.5
11
1
0.5
0.25
0.050
0
Table 4. Setting the Undervoltage/Overvoltage Thresholds
R1 TABLE (kΩ)
R2 = 10kΩ
OPTION
OVP
UVP
1
2
133
17.6
16.9
15.7
15.4
15.1
14.4
13.8
7.4
7.9
7.5
7.0
6.9
6.8
6.4
6.2
3.3
3.1
2.9
2.7
2.4
127
3
118
4
115
5
113
6
107
7
102
8
49.9
46.4
43.2
39.2
33.2
9
6.9
10
11
12
6.5
6.1
5.3
V , the internal MOSFET cannot be turned on, then the
Thermal Protection
IN
MAX15096A autoretries in t
MAX15096 latches off.
(3.4s typ), while the
RESTART
The devices enter a thermal shutdown mode in the event
of overheating caused by excessive power dissipation or
high ambient temperature. When the junction temperature
If V
is in the range from 50% to 90% of V , then the
IN
OUT
exceeds T = +150°C (typ), the internal thermal protec-
internal MOSFET still cannot be turned on after t
time
J
SU
tion circuitry turns off the internal power MOSFET. The
devices recover from thermal shutdown mode once the
junction temperature drops by 20ºC (typ).
elapses. The MAX15096A autoretries in t
the MAX15096 latches off.
, while
RESTART
Applications Information
IN-to-OUT Short-Circuit Protection
At startup, after all the input conditions are satisfied (UV,
Setting the Undervoltage/
Overvoltage Threshold
See Table 4 for options.
OV, V
), the devices immediately check for IN-to-
UVLO
OUT short-circuit faults. If V
is greater than 90% of
OUT
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
Typical Application Circuit
REMOVABLE CARD
12V
IN
OUT
VIN
22μF
*TVS
RIN
COUT
VPRSNT
PRSNT
VCC
R1
MAX15096
MAX15096A
MAX15096D
CIN
UVOV
CB
R2
REG
GATE
RCB
CREG
CSR
TIMER
SYSTEM ENABLE
INPUT
EN
RTIMER
GND
*OPTIONAL
Wafer-Level Packaging (WLP) Applications Information
For the latest application details on WLP construction, dimensions, tape carrier information, printed-circuit board techniques, bump-pad
layout, and recommended reflow temperature profile, as well as the latest information on reliability testing results, refer to Application
Note 1891: Wafer-Level Packaging (WLP) and Its Applications—available on Maxim’s website at www.maximintegrated.com/wlp.
Ordering Information
PART
TEMP RANGE (°C)
-40 to +105
PIN-PACKAGE
16 WLP
FAULT MANAGEMENT
Latchoff
MAX15096GWE+
MAX15096AGWE+
MAX15096DGWE+*
-40 to +105
16 WLP
Autoretry
-40 to +105
16 WLP
Autoretry
+Denotes a lead (Pb)-free/RoHS-compliant package.
*Future product—contact factory for availability.
Chip Information
PROCESS: BiCMOS
Package Information
For the latest package outline information and land patterns (foot-
prints), go to www.maximintegrated.com/packages. Note that
a “+”, “#”, or “-” in the package code indicates RoHS status only.
Package drawings may show a different suffix character, but the
drawing pertains to the package regardless of RoHS status.
PACKAGE PACKAGE
OUTLINE
NO.
LAND PATTERN
NO.
TYPE
CODE
Refer to Application
16 WLP
W162J2Z+1
21-0200
Note 1891
Maxim Integrated
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MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6Am Integrated Hot-Swap/
Electronic Circuit Breaker
Typical Application Circuit
REVISION REVISION
PAGES
CHANGED
DESCRIPTION
NUMBER
DATE
0
3/14
Initial release
—
For information on other Maxim Integrated products, visit Maxim Integrated’s website at www.maximintegrated.com.
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
©
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
2014 Maxim Integrated Products, Inc.
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