MAX19999ETX+T [MAXIM]
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer; 双通道， SiGe，高线性度， 3000MHz的至4000MHz下变频混频器，带有LO缓冲器
| 型号： | MAX19999ETX+T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer |
| 文件： | 总19页 (文件大小：321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-4293; Rev 0; 10/08
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
General Description
Features
The MAX19999 dual-channel downconverter provides
8.3dB of conversion gain, +24dBm input IP3, +11.4dBm
1dB input compression point, and a noise figure of
10.5dB for 3000MHz to 4000MHz WiMAX™ and LTE
diversity receiver applications. With an optimized LO fre-
quency range of 2650MHz to 3700MHz, this mixer is
ideal for low-side LO injection architectures.
o 3000MHz to 4000MHz RF Frequency Range
o 2650MHz to 3700MHz LO Frequency Range
o 50MHz to 500MHz IF Frequency Range
o 8.3dB Conversion Gain
o +24dBm Input IP3
o 10.5dB Noise Figure
In addition to offering excellent linearity and noise per-
formance, the MAX19999 also yields a high level of
component integration. This device includes two dou-
ble-balanced passive mixer cores, two LO buffers, and
a pair of differential IF output amplifiers. Integrated on-
chip baluns allow for single-ended RF and LO inputs.
o +11.4dBm Input 1dB Compression Point
o 74dBc Typical 2 x 2 Spurious Rejection at
P
RF
= -10dBm
o Dual Channels Ideal for Diversity Receiver
Applications
The MAX19999 requires a nominal LO drive of 0dBm
o Integrated LO Buffer
o Integrated LO and RF Baluns for Single-Ended
and a typical supply current of 388mA at V
= +5.0V
CC
or 279mA at V
= +3.3V.
CC
Inputs
The MAX19999 is pin compatible with the MAX19997A
1800MHz to 2900MHz mixer and pin similar with the
MAX19985/MAX19985A and MAX19995/MAX19995A
series of 700MHz to 2200MHz mixers, making this
entire family of downconverters ideal for applications
where a common PCB layout is used across multiple
frequency bands.
o Low -3dBm to +3dBm LO Drive
o Pin Compatible with the MAX19997A 1800MHz to
2900MHz Mixer
o Pin Similar to the MAX9995/MAX9995A and
MAX19995/MAX19995A 1700MHz to 2200MHz
Mixers and the MAX9985/MAX9985A and
MAX19985/MAX19985A 700MHz to 1000MHz
Mixers
o 39dB Channel-to-Channel Isolation
o Single +5.0V or +3.3V Supply
The MAX19999 is available in a compact 6mm x 6mm,
36-pin thin QFN package with an exposed pad.
Electrical performance is guaranteed over the extended
temperature range, from T = -40°C to +85°C.
C
o External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
Applications
3.5GHz WiMAX and LTE Base Stations
Fixed Broadband Wireless Access
Microwave Links
Ordering Information
PART
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
36 Thin QFN-EP*
36 Thin QFN-EP*
Wireless Local Loop
MAX19999ETX+
MAX19999ETX+T
Private Mobile Radios
Military Systems
+Denotes a lead-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
Pin Configuration/Functional Diagram and Typical
Application Circuit appear at end of data sheet.
WiMAX is a trademark of WiMAX Forum.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
ABSOLUTE MAXIMUM RATINGS
CC
RF_, LO to GND.....................................................-0.3V to +0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,
V
to GND...........................................................-0.3V to +5.5V
θ
θ
(Notes 2, 3)..............................................................+38°C/W
(Note 3).....................................................................7.4°C/W
Operating Case Temperature Range
JA
JC
LO_ADJ_D to GND.................................-0.3V to (V
RF_, LO Input Power ......................................................+15dBm
RF_, LO Current (RF and LO are DC shorted to GND
through balun).................................................................50mA
Continuous Power Dissipation (Note 1) ..............................8.7W
+ 0.3V)
(Note 4) ...................................................T = -40°C to +85°C
CC
C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Based on junction temperature T = T + (θ x V
x I ). This formula can be used when the temperature of the exposed
CC CC
J
C
JC
pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction
temperature must not exceed +150°C.
MAX19
Note 2: Junction temperature T = T + (θ x V
x I ). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
J
A
JA
CC
CC
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: T is the temperature on the exposed pad of the package. T is the ambient temperature of the device and PCB.
A
C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, no input RF or LO signals applied, V
= +4.75V to +5.25V, T = -40°C to +85°C. Typical values are at
CC
C
V
CC
= +5.0V, T = +25°C, unless otherwise noted. R1 = R4 = 750Ω, R2 = R5 = 698Ω.)
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
5
MAX
5.25
420
UNITS
V
Supply Voltage
Supply Current
V
4.75
CC
CC
I
Total supply current
388
mA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, no input RF or LO signals applied, T = -40°C to +85°C. Typical values are at
C
V
CC
= +3.3V, T = +25°C, unless otherwise noted. R1, R4 = 1.1kΩ; R2, R5 = 845Ω.) (Note 5)
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
3.3
MAX
UNITS
V
Supply Voltage
Supply Current
V
(Note 6)
Total supply current
3
3.6
CC
CC
I
279
mA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency
SYMBOL
CONDITIONS
MIN
3000
2650
TYP
MAX
4000
3700
UNITS
MHz
f
(Notes 5, 7)
(Notes 5, 7)
RF
LO
LO Frequency
IF Frequency
LO Drive Level
f
MHz
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Notes 5, 7)
100
500
f
MHz
dBm
IF
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Notes 5, 7)
50
-3
250
+3
P
(Note 7)
LO
2
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
= -3dBm to +3dBm,
LO
CC
P
= -5dBm, f = 3200MHz to 3900MHz, f = 2800MHz to 3600MHz, f = 350MHz, f > f , T = -40°C to +85°C. Typical val-
RF
RF LO IF RF LO C
ues are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 3550MHz, f = 3200MHz, f = 350MHz, T = +25°C, unless otherwise
RF LO RF LO IF C
CC
noted.) (Note 8)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
G
T
C
= +25°C (Notes 6, 9)
7.3
8.3
9.3
dB
C
f
= 3200MHz to 3900MHz, over any
RF
Conversion Gain Flatness
0.15
dB
100MHz band
f
= 3200MHz to 3900MHz, T = -40°C to
RF
C
Gain Variation Over Temperature
Input Compression Point
TC
-0.01
11.4
24.3
dB/°C
dBm
CG
+85°C
IP
(Notes 6, 9, 10)
9.8
1dB
f
- f
= 1MHz, P = -5dBm per tone
RF1 RF2 RF
21.6
(Notes 6, 9)
Third-Order Input Intercept Point
IIP3
dBm
f
= 3550MHz, f
- f
= 1MHz,
RF
RF1 RF2
P
= -5dBm per tone, T = +25°C
22
24.3
RF
C
(Notes 6, 9)
Third-Order Input Intercept Point
Variation Over Temperature
f
- f = 1MHz, T = -40°C to +85°C
0.3
10.5
dBm
dB
RF1 RF2
C
Single sideband, no blockers present
(Notes 5, 6)
13
Noise Figure
NF
SSB
Single sideband, no blockers present,
f
10.5
11.5
= 3500MHz, T = +25°C (Notes 5, 6)
C
RF
Noise Figure Temperature
Coefficient
Single sideband, no blockers present,
= -40°C to +85°C
TC
0.018
dB/°C
dB
NF
T
C
f
= 3700MHz, P
= 8dBm,
BLOCKER
BLOCKER
Noise Figure Under Blocking
Conditions
f
RF
= 3450MHz, f = 3100MHz, P = 0dBm,
LO LO
NF
21
25
B
V
CC
= 5.0V, T = +25°C (Notes 5, 6, 11)
C
P
= -10dBm,
RF
68
63
77
67
74
69
f
= 3500MHz, f
=
RF
LO
= f
(Notes 5, 6)
2RF-2LO Spurious Rejection
3RF-3LO Spurious Rejection
2 x 2
3 x 3
3150MHz, f
175MHz, T = +25°C
+
dBc
dBc
SPUR
LO
P
= -5dBm,
RF
C
(Notes 6, 9)
P
= -10dBm,
RF
86
f
= 3500MHz, f
=
RF
LO
= f
(Notes 5, 6)
3150MHz, f
116.67MHz, T = +25°C
+
SPUR
LO
P
= -5dBm,
RF
C
76
(Notes 6, 9)
LO on and IF terminated into a matched
impedance
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
15.4
14
dB
dB
Ω
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
Z
200
IF
_______________________________________________________________________________________
3
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, V
= +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, P
= -3dBm to +3dBm,
LO
CC
P
= -5dBm, f = 3200MHz to 3900MHz, f = 2800MHz to 3600MHz, f = 350MHz, f > f , T = -40°C to +85°C. Typical val-
RF
RF LO IF RF LO C
ues are at V
= +5.0V, P = -5dBm, P = 0dBm, f = 3550MHz, f = 3200MHz, f = 350MHz, T = +25°C, unless otherwise
RF LO RF LO IF C
CC
noted.) (Note 8)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
RF terminated into 50Ω, LO driven by a 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
IF Output Return Loss
18
dB
MAX19
RF-to-IF Isolation
28
-31
-30
-23
dB
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
(Notes 6, 9)
-24
dBm
dBm
dBm
RFMAIN (RFDIV ) converted power
measured at IFDIV (IFMAIN), relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω (Notes 6, 9)
Channel Isolation
36
39
dB
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, typical values are at V
= +3.3V, P
= -5dBm, P
= 0dBm, f
= 3550MHz, f = 3200MHz,
LO
CC
RF
LO
RF
f
IF
= 350MHz, T = +25°C, unless otherwise noted.) (Note 8)
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
G
8.0
dB
C
f
= 3200MHz to 3900MHz, over any
RF
Conversion Gain Flatness
0.15
dB
100MHz band
f
= 3200MHz to 3900MHz, T = -40°C to
RF
C
Gain Variation Over Temperature
Input Compression Point
TC
-0.01
8.4
dB/°C
dBm
dBm
CG
+85°C
IP
1dB
Third-Order Input Intercept Point
IIP3
f
f
- f
= 1MHz, P = -5dBm per tone
20.3
RF1 RF2
RF
Third-Order Input Intercept
Variation Over Temperature
- f
= 1MHz, T = -40°C to +85°C
0.3
10.5
dBm
dB
RF1 RF2
C
Noise Figure
NF
Single sideband, no blockers present
Single sideband, no blockers present,
T
SSB
Noise Figure Temperature
Coefficient
TC
0.018
dB/°C
NF
= -40°C to +85°C
C
P
P
P
P
= -10dBm
= -5dBm
= -10dBm
= -5dBm
74
69
75
65
RF
RF
RF
RF
2RF-2LO Spurious Rejection
3RF-3LO Spurious Rejection
RF Input Return Loss
2 x 2
3 x 3
f
f
= f + 175MHz
dBc
dBc
dB
SPUR
LO
= f + 116.67MHz
SPUR
LO
LO on and IF terminated into a matched
impedance
16
RF and IF terminated into a matched
impedance
LO Input Return Loss
15.5
dB
4
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, typical values are at V
= +3.3V, P
= -5dBm, P
= 0dBm, f
= 3550MHz, f = 3200MHz,
LO
CC
RF
LO
RF
f
IF
= 350MHz, T = +25°C, unless otherwise noted.) (Note 8)
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Nominal differential impedance at the IC’s
IF outputs
IF Output Impedance
IF Output Return Loss
Z
200
Ω
IF
RF terminated into 50Ω, LO driven by a 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
19
dB
RF-to-IF Isolation
28
-36
-34
-27
dB
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
dBm
dBm
dBm
RFMAIN (RFDIV ) converted power
measured at IFDIV (IFMAIN), relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω
Channel Isolation
38.5
dB
Note 5: Not production tested.
Note 6: Guaranteed by design and characterization.
Note 7: Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating
Characteristics section.
Note 8: All limits reflect losses of external components, including a 0.9dB loss at f = 350MHz due to the 4:1 impedance trans-
IF
former. Output measurements were taken at IF outputs of the Typical Application Circuit.
Note 9: 100% production tested for functional performance.
Note 10: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 11: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
_______________________________________________________________________________________
5
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics
(Typical Application Circuit, V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
RF
LO C
CC
otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
10
9
10
9
10
9
T
= -30°C
C
T
= +25°C
C
MAX19
8
8
8
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
7
7
7
T
= +85°C
C
6
6
6
3000
3200
3400
3600
3800
4000
4000
3900
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
4000
3900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
27
26
25
24
23
22
27
26
25
24
23
22
27
26
25
24
23
22
P
= -5dBm/TONE
P
= -5dBm/TONE
P = -5dBm/TONE
RF
RF
RF
T
= +85°C
C
T
= +25°C
C
T
= -30°C
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
C
LO
3000
3200
3400
3600
3800
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
T
= +85°C
C
T
= +25°C
C
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
T
C
= -30°C
8
8
8
7
7
7
3200
3375
3550
3725
3200
3375
3550
3725
3900
3200
3375
3550
3725
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
6
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
RF
LO C
CC
otherwise noted.)
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
90
80
70
60
50
90
80
70
60
50
90
80
70
60
50
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
P
= 0dBm
LO
T
= +85°C
C
P
= +3dBm
LO
P
= -3dBm
T
= +25°C
LO
C
V
= 4.75V, 5.0V, 5.25V
CC
T
= -30°C
C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
95
85
75
65
55
95
85
75
65
55
95
85
75
65
55
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
T
= -30°C, +25°C, +85°C
CC
C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P vs. RF FREQUENCY
1dB
1dB
1dB
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
V
= 5.25V
T
= +85°C
CC
C
V
= 4.75V
CC
T
= +25°C
P
= -3dBm, 0dBm, +3dBm
V
= 5.0V
CC
C
LO
T
= -30°C
C
3200
3375
3550
3725
3900
3200
3375
3550
3725
3900
3200
3375
3550
3725
3900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
_______________________________________________________________________________________
7
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
RF
LO C
CC
otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
50
45
40
35
30
50
45
40
35
30
50
45
40
35
30
MAX19
V
= 4.75V, 5.0V, 5.25V
T
= -30°C, +25°C, +85°C
P
= -3dBm, 0dBm, +3dBm
LO
CC
C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
T
= -30°C
C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= +25°C, +85°C
C
2600
2800
3000
3200
3400
3600
2600
2800
3000
3200
3400
3600
2600
2800
3000
3200
3400
3600
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
40
30
20
10
40
30
20
10
40
30
20
10
V
CC
= 4.75V, 5.0V, 5.25V
T
= +25°C
C
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
LO
T
= -30°C
C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
8
_______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
RF
CC
LO
C
otherwise noted.)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
T
C
= -30°C, +25°C, +85°C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
2700
3100
LO FREQUENCY (MHz)
3500
3900
2700
3100
LO FREQUENCY (MHz)
3500
3900
2700
3100
LO FREQUENCY (MHz)
3500
3900
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
T
C
= -30°C, +25°C, +85°C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
2700
3100
3500
3900
2700
3100
3500
3900
2700
3100
3500
3900
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS vs. IF FREQUENCY
0
5
0
5
f
IF
= 350MHz
f
= 3200MHz
LO
V
= 4.75V, 5.0V, 5.25V
CC
10
15
20
25
30
10
15
20
25
30
P
= -3dBm, 0dBm, +3dBm
LO
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
_______________________________________________________________________________________
9
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +5.0V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
RF
LO C
CC
otherwise noted.)
LO PORT RETURN LOSS vs. LO FREQUENCY
SUPPLY CURRENT vs. TEMPERATURE (T )
C
0
400
390
380
370
360
350
V
= 5.25V
CC
5
10
15
20
25
P
= -3dBm
LO
MAX19
V
= 4.75V
CC
V
= 5.0V
CC
P
= 0dBm
LO
P
= +3dBm
LO
2650
2900
3150
3400
3650
-35
-15
5
25
45
65
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
LO RF C
CC
otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
10
9
10
9
10
9
V
= 3.3V
V
= 3.3V
CC
CC
T
= +25°C
C
T
= -30°C
C
8
8
8
7
7
7
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
LO
T
= +85°C
C
6
6
6
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
10 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
LO RF C
CC
otherwise noted.)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
23
22
23
22
23
22
P
= -5dBm/TONE
= 3.3V
P
V
CC
= -5dBm/TONE
= 3.3V
P
= -5dBm/TONE
RF
RF
RF
T
= +85°C
C
V
CC
T
= +25°C
C
21
20
19
21
20
19
21
20
19
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
LO
CC
T
= -30°C
C
18
18
18
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
V
= 3.3V
V
= 3.3V
CC
T
= +85°C
CC
C
V
= 3.0V, 3.3V, 3.6V
P
= -3dBm, 0dBm, +3dBm
CC
LO
T
= +25°C
C
T
= -30°C
C
8
8
8
7
7
7
3200
3375
3550
3725
3900
3200
3375
3550
3725
3900
3200
3375
3550
3725
3900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
2RF-2LO RESPONSE vs. RF FREQUENCY
90
80
70
60
50
90
80
70
60
50
90
80
70
60
50
P
V
= -5dBm
= 3.3V
P
= -5dBm
P
= -5dBm
RF
RF
RF
CC
V
= 3.3V
CC
P
= 0dBm
LO
T
= +85°C
C
V
= 3.6V
CC
P
= +3dBm
LO
V
= 3.3V
CC
P
= -3dBm
3800
LO
T
= +25°C
C
V
= 3.0V
3800
T
= -30°C
CC
C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
4000
3000
3200
3400
3600
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 11
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
LO RF C
CC
otherwise noted.)
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
3RF-3LO RESPONSE vs. RF FREQUENCY
85
75
65
55
45
85
75
65
55
45
85
75
65
55
45
P
= -5dBm
P
= -5dBm
P
RF
= -5dBm
RF
RF
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= +85°C
MAX19
P
= -3dBm, 0dBm, +3dBm
LO
V
CC
= 3.0V, 3.3V, 3.6V
T
C
= -30°C
T
= +25°C
C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P vs. RF FREQUENCY
1dB
1dB
1dB
10
9
10
9
10
9
V
= 3.3V
V
CC
= 3.3V
CC
T
C
= +85°C
V
= 3.6V
CC
8
8
8
V
= 3.3V
3725
CC
T
C
= +25°C
P
= -3dBm, 0dBm, +3dBm
LO
7
7
7
T
C
= -30°C
V
CC
= 3.0V
6
6
6
3200
3375
3550
3725
3900
3200
3375
3550
3725
3900
3200
3375
3550
3900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
50
45
40
35
30
50
45
40
35
30
50
45
40
35
30
V
= 3.3V
V
= 3.3V
CC
CC
V
= 3.0V, 3.3V, 3.6V
CC
T
C
= -30°C, +25°C, +85°C
P
LO
= -3dBm, 0dBm, +3dBm
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
12 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
CC
LO
RF
C
otherwise noted.)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
V
= 3.3V
CC
V
= 3.3V
CC
T
= -30°C
C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 3.0V, 3.3V, 3.6V
CC
T
= +85°C
C
T
= +25°C
C
2600
2800
3000
3200
3400
3600
2600
2800
3000
3200
3400
3600
2600
2800
3000
3200
3400
3600
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
40
30
20
10
40
30
20
10
40
30
20
10
V
= 3.3V
V
= 3.3V
CC
CC
T
= +85°C
C
V
= 3.0V, 3.3V, 3.6V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= +25°C
C
T
= -30°C
C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
V
= 3.3V
V
= 3.3V
CC
CC
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
T
= -30°C, +25°C, +85°C
LO
C
2700
3100
3500
3900
2700
3100
3500
3900
2700
3100
3500
3900
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
______________________________________________________________________________________ 13
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= +3.3V, LO is low-side injected for a 350MHz IF, P = 0dBm, P = -5dBm, T =+25°C, unless
LO RF C
CC
otherwise noted.)
2LO LEAKAGE AT RF PORT vs.
LO FREQUENCY
2LO LEAKAGE AT RF PORT vs.
LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
V
= 3.3V
V
= 3.3V
CC
CC
T
= -30°C, +25°C, +85°C
C
MAX19
V
= 3.0V, 3.3V, 3.6V
P
= -3dBm, 0dBm, +3dBm
CC
LO
2700
3100
3500
3900
2700
3100
3500
3900
2700
3100
3500
3900
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF PORT RETURN LOSS vs.
RF FREQUENCY
IF PORT RETURN LOSS vs.
IF FREQUENCY
0
5
0
5
V
= 3.3V
f
= 350MHz
f
= 3200MHz
LO
CC
IF
V
= 3.0V, 3.3V, 3.6V
P
= -3dBm, 0dBm, +3dBm
CC
LO
10
15
20
25
30
10
15
20
25
30
50
140
230
320
410
500
3000
3200
3400
RF FREQUENCY (MHz)
3600
3800
4000
IF FREQUENCY (MHz)
LO PORT RETURN LOSS vs.
LO FREQUENCY
SUPPLY CURRENT vs.
TEMPERATURE (T )
C
0
300
290
280
270
260
250
240
V
= 3.3V
CC
V
= 3.3V
V
= 3.6V
CC
CC
5
10
15
20
25
P
= 0dBm
LO
P
P
= -3dBm
= +3dBm
LO
LO
V
= 3.0V
CC
2650
2900
3150
3400
3650
-35
-15
5
25
45
65
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
14 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
Pin Description
PIN
NAME
FUNCTION
1
RFMAIN
Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
2, 5, 6, 8, 12, 15,
18, 23, 28, 31, 34
GND
GND
Ground. Not internally connected. Ground these pins or leave unconnected.
3, 7, 20, 22, 24,
25, 26, 27
Ground. Internally connected to the exposed pad (EP). Connect all ground pins and the exposed
pad together.
4, 10, 16, 21,
30, 36
Power Supply. Connect bypass capacitors as close as possible to the pin (see the Typical
Application Circuit).
V
CC
Diversity Channel RF Input. This input is internally matched to 50Ω. Requires a DC-blocking
capacitor.
9
11
RFDIV
IFD_SET
IFD+, IFD-
LO_ADJ_D
LO
IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the diversity IF amplifier.
Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
CC
13, 14
17
(see the Typical Application Circuit).
LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the diversity LO amplifier.
Local Oscillator Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
19
LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the main LO amplifier.
29
LO_ADJ_M
IFM-, IFM+
IFM_SET
Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
CC
32, 33
35
(see the Typical Application Circuit).
IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the main IF amplifier.
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses
multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These
multiple via grounds are also required to achieve the noted RF performance
—
EP
required because the input is internally DC shorted to
Detailed Description
ground through each channel’s on-chip balun. When
using a 1.5pF DC-blocking capacitor, the RF port input
return loss is typically 15dB over the RF frequency
range of 3200MHz to 3900MHz.
The MAX19999 provides high linearity and low noise fig-
ure for a multitude of 3000MHz to 4000MHz WiMAX and
LTE base-station applications. This device operates over
an LO range of 2650MHz to 3700MHz and an IF range of
50MHz to 500MHz. Integrated baluns and matching cir-
cuitry allow 50Ω single-ended interfaces to the RF and
LO ports. The integrated LO buffer provides a high drive
level to the mixer core, reducing the LO drive required at
the MAX19999’s input to a range of -3dBm to +3dBm.
The IF port incorporates a differential output, which is
ideal for providing enhanced 2RF-2LO performance.
LO Input, Buffer, and Balun
A two-stage internal LO buffer allows a wide input
power range for the LO drive. All guaranteed specifica-
tions are for an LO signal power from -3dBm to +3dBm.
The on-chip low-loss balun, along with an LO buffer,
drives the double-balanced mixer. All interfacing and
matching components from the LO input to the IF out-
puts are integrated on chip.
RF Input and Balun
The MAX19999’s two RF inputs (RFMAIN and RFDIV)
provide a 50Ω match when combined with a series DC-
blocking capacitor. This DC-blocking capacitor is
High-Linearity Mixer
The core of the MAX19999 is a pair of double-bal-
anced, high-performance passive mixers. Exceptional
______________________________________________________________________________________ 15
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
linearity is provided by the large LO swing from the on-
chip LO buffer. When combined with the integrated IF
amplifiers, the cascaded IIP3, 2RF-2LO rejection, and
NF performance is typically +24dBm, 74dBc, and
10.5dB, respectively, for low-side LO injection architec-
tures covering the 3000MHz to 4000MHz RF band.
Significant reductions in power consumption can also
be realized by operating the mixer with an optional sup-
ply voltage of 3.3V. Doing so reduces the overall power
consumption by up to 53%. See the +3.3V Supply AC
Electrical Characteristics table and the relevant +3.3V
curves in the Typical Operating Characteristics section
to evaluate the power vs. performance trade-offs.
Differential IF Output Amplifier
The MAX19999 mixers have an IF frequency range of
50MHz to 500MHz. The differential, open-collector IF
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
For the best performance, route the ground pin traces
directly to the exposed pad under the package.
output ports require external pullup inductors to V
.
CC
MAX19
These pullup inductors are also used to resonate out
the parasitic shunt capacitance of the IC, PCB compo-
nents, and PCB to provide an optimized IF match at the
frequency of interest. Note that differential IF outputs
are ideal for providing enhanced 2RF-2LO rejection
performance. Single-ended IF applications require a
4:1 balun to transform the 200Ω differential output
impedance to a 50Ω single-ended output. After the
balun, the IF return loss is typically 18dB.
The PCB exposed pad MUST be connected to the
ground plane of the PCB. It is suggested that multiple
vias be used to connect this pad to the lower level
ground planes. This method provides a good RF/ther-
mal-conduction path for the device. Solder the exposed
pad on the bottom of the device package to the PCB.
The MAX19999 evaluation kit can be used as a refer-
ence for board layout. Gerber files are available upon
request at www.maxim-ic.com.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50Ω. No
matching components are required for RF frequencies
ranging from 3000MHz to 4000MHz. RF and LO inputs
require only DC-blocking capacitors for interfacing.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for high-
frequency circuit stability. Bypass each V
pin with
CC
the capacitors shown in the Typical Application Circuit.
The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance down to a 50Ω single-
ended output (see the Typical Application Circuit).
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19999’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
MAX19999 is mounted be designed to conduct heat
from the exposed pad. In addition, provide the exposed
pad with a low-inductance path to electrical ground.
The exposed pad MUST be soldered to a ground plane
on the PCB, either directly or through an array of plated
via holes.
Reduced-Power Mode
Each channel of the MAX19999 has two pins (LO_ADJ,
IF_SET) that allow external resistors to set the internal
bias currents. Nominal values for these resistors are
given in Table 1. Larger valued resistors can be used to
reduce power dissipation at the expense of some per-
formance loss. If 1% resistors are not readily avail-
able, 5% resistors can be substituted.
16 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
MAX19
Table 1. Application Circuit Component Values
DESIGNATION
QTY
DESCRIPTION
SUPPLIER
C1, C8, C14
3
1.5pF microwave capacitors (0402)
Murata Electronics North America, Inc.
C4, C9, C13,
C15, C17, C18
6
0.01µF microwave capacitors (0402)
Murata Electronics North America, Inc.
C10, C11, C12,
C19, C20, C21
6
4
82pF microwave capacitors (0603)
Murata Electronics North America, Inc.
Coilcraft, Inc.
L1–L4
R1, R4
120nH wire-wound high-Q inductors* (0805)
750ꢀ 1% resistor (0402). Use for V = +5.0V applications.
CC
Larger values can be used to reduce power at the expense
of some performance loss. See the Typical Operating
Characteristics.
Digi-Key Corp.
Digi-Key Corp.
Digi-Key Corp.
Digi-Key Corp.
Digi-Key Corp.
2
1.1kꢀ 1% resistor (0402). Use for V = +3.3V applications.
CC
Larger values can be used to reduce power at the expense
of some performance loss. See the Typical Operating
Characteristics.
698ꢀ 1% resistor (0402). Use for V = +5.0V applications.
CC
Larger values can be used to reduce power at the expense
of some performance loss. See the Typical Operating
Characteristics.
R2, R5
2
2
845ꢀ 1% resistor (0402). Use for V = +3.3V applications.
CC
Larger values can be used to reduce power at the expense
of some performance loss. See the Typical Operating
Characteristics.
0ꢀ resistors (1206). These resistors can be increased in
value to reduce power dissipation in the device but will
reduce the compression point. Full P
R3, R6
performance
1dB
achieved using 0ꢀ.
T1, T2
U1
2
1
4:1 IF balun TC4-1W-17+
Mini-Circuits
MAX19999 IC (36 TQFN-EP)
Maxim Integrated Products, Inc.
*Use 390nH (0805) inductors for an IF frequency of 200MHz. Contact the factory for details.
______________________________________________________________________________________ 17
Dual, SiGe High-Linearity, 3000MHz to
4000MHz Downconversion Mixer with LO Buffer
Typical Application Circuit
C19
T1
L1*
L2*
IF MAIN OUTPUT
V
CC
C21
R3
MAX19
4:1
CC
R1
V
V
CC
C20
R2
C18
C17
+
C1
RFMAIN
GND
GND
GND
GND
GND
GND
GND
RF MAIN INPUT
1
2
3
4
5
6
7
8
9
27
26
25
24
23
22
21
20
19
MAX19999
GND
V
CC
V
CC
C4
GND
GND
V
CC
GND
V
CC
C15
EXPOSED
PAD
GND
GND
LO
RFDIV
RF DIV INPUT
LO
C14
C8
V
CC
C9
R4
V
CC
R5
C13
T2
C11
L4*
V
CC
C12
R6
IF DIV OUTPUT
L3*
*USE 390nH (0805) INDUCTORS FOR AN IF FREQUENCY
OF 200MHz. CONTACT THE FACTORY FOR DETAILS.
4:1
C10
18 ______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to 4000MHz
Downconversion Mixer with LO Buffer
MAX19
Pin Configuration/Functional Diagram
TOP VIEW
+
1
2
3
4
5
6
7
8
9
27
26
25
24
23
22
21
20
19
RFMAIN
GND
GND
GND
GND
GND
GND
GND
MAX19999
GND
V
CC
GND
GND
V
CC
GND
EXPOSED
PAD
GND
LO
GND
RFDIV
THIN QFN-EP
(6mm x 6mm)
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE.
Package Information
Chip Information
For the latest package outline information and land patterns, go
PROCESS: SiGe BiCMOS
to www.maxim-ic.com/packages.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
36 Thin QFN-EP
T3666+2
21-0141
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 19
© 2008 Maxim Integrated Products
is a registered trademark of Maxim Integrated Products, Inc.
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