MAX2044ETP+ [MAXIM]
SiGe, High-Linearity, 2300MHz to 4000MHz Upconversion/Downconversion Mixer with LO Buffer; 的SiGe ，高线性度， 2300MHz至4000MHz的上变频/下变频混频器，带有LO缓冲器
| 型号： | MAX2044ETP+ |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | SiGe, High-Linearity, 2300MHz to 4000MHz Upconversion/Downconversion Mixer with LO Buffer |
| 文件： | 总39页 (文件大小：6427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-5002; Rev 0; 10/09
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
General Description
Features
The MAX2044 single, high-linearity upconversion/down-
conversion mixer provides +32.5dBm input IP3, 8.5dB
noise figure, and 7.7dB conversion loss for 2300MHz
to 4000MHz LTE, WiMAXK, and MMDS wireless infra-
structure applications. With an ultra-wide 2600MHz to
4300MHz LO frequency range, the MAX2044 can be
used in either low-side or high-side LO injection archi-
tectures for virtually all 2.5GHz and 3.5GHz applications.
2300MHz to 4000MHz RF Frequency Range
S
S
S
S
S
S
S
S
2600MHz to 4300MHz LO Frequency Range
50MHz to 500MHz IF Frequency Range
7.7dB Conversion Loss
8.5dB Noise Figure
+32.5dBm Typical Input IP3
21dBm Typical Input 1dB Compression Point
In addition to offering excellent linearity and noise
performance, the MAX2044 also yields a high level of
component integration. This device includes a double-
balanced passive mixer core, an LO buffer, and on-chip
baluns that allow for single-ended RF and LO inputs.
The MAX2044 requires a nominal LO drive of 0dBm,
68dBc Typical 2RF - 2LO Spurious Rejection at
P
RF
= -10dBm
Integrated LO Buffer
S
S
Integrated RF and LO Baluns for Single-Ended
Inputs
and supply current is typically 138mA at V
= 5.0V or
CC
121mA at V
= 3.3V.
CC
Low -3dBm to +3dBm LO Drive
S
S
The MAX2044 is pin similar with the MAX2029/MAX2031
650MHz to 1000MHz mixers and the MAX2039/MAX2041/
MAX2042 1700MHz to 3000MHz mixers, making this
entire family of up/downconverters ideal for applica-
tions where a common PCB layout is used for multiple
frequency bands.
Pin Similar with the MAX2029/MAX2031 Series
of 650MHz to 1000MHz Mixers and the MAX2039/
MAX2041/MAX2042 Series of 1700MHz to
3000MHz Mixers
Single 5.0V or 3.3V Supply
S
S
External Current-Setting Resistor Provides Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
The MAX2044 is available in a compact 20-pin thin QFN
(5mm x 5mm) package with an exposed pad. Electrical
performance is guaranteed over the extended -40NC to
+85NC temperature range.
Applications
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
3.5GHz WiMAX and LTE Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Ordering Information
PART
TEMP RANGE
-40NC to +85NC
-40NC to +85NC
PIN-PACKAGE
20 Thin QFN-EP*
20 Thin QFN-EP*
MAX2044ETP+
MAX2044ETP+T
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
Private Mobile Radios
T = Tape and reel.
Military Systems
WiMAX is a trademark of WiMAX Forum.
_______________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
ABSOLUTE MAXIMUM RATINGS
CC
V
to GND..........................................................-0.3V to +5.5V
B
JC
(Notes 1, 3)............................................................ +13NC/W
Operating Case Temperature
IF+, IF-, LOBIAS to GND.......................... -0.3V to (V
+ 0.3V)
CC
RF, LO Input Power.......................................................+20dBm
RF, LO Current (RF and LO is DC shorted
to GND through a balun)................................... .............50mA
Continuous Power Dissipation (Note 1) .................................5W
Range (Note 4) ..................................... T = -40NC to +85NC
C
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
B
(Notes 2, 3)............................................................ +38NC/W
JA
Note 1: Based on junction temperature T = T + (B x V
x I ). This formula can be used when the temperature of the
CC
J
C
JC
CC
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
Note 2: Junction temperature T = T + (B x V
x I ). This formula can be used when the ambient temperature of the PCB is
CC
J
A
JA
CC
known. The junction temperature must not exceed +150NC.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: T is the temperature on the exposed pad of the package. T is the ambient temperature of the device and PCB.
C
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
= 4.75V to 5.25V, no input RF or LO signals. T = -40NC to +85NC, unless otherwise noted. Typical
C
CC
values are at V
= 5.0V, T = +25NC, all parameters are production tested.)
C
CC
PARAMETER
Supply Voltage
Supply Current
SYMBOL
CONDITIONS
MIN
TYP
5.0
MAX
5.25
155
UNITS
V
V
4.75
CC
CC
I
138
mA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
= 3.0V to 3.6V, no input RF or LO signals. T = -40NC to +85NC, unless otherwise noted. Typical
C
CC
values are at V
= 3.3V, T = +25NC, parameters are guaranteed by design, unless otherwise noted.)
C
CC
PARAMETER
Supply Voltage
Supply Current
SYMBOL
CONDITIONS
MIN
TYP
3.3
MAX
3.6
UNITS
V
V
3.0
CC
CC
I
Total supply current, V = 3.3V
121
135
mA
CC
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Typical Application Circuit with C1 = 3.3nH
and C12 = 0.3pF, see Table 1 for details
(Note 5)
2300
3000
RF Frequency Range
f
MHz
RF
Typical Application Circuit with C1 = 8.2pF
and C12 not installed, see Table 1 for
details (Note 5)
3000
2600
4000
4300
LO Frequency
IF Frequency
LO Drive
f
(Note 5)
MHz
MHz
dBm
LO
Using an M/A-Com MABAES0029 1:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Note 5)
f
50
-3
500
+3
IF
P
(Note 5)
0
LO
2
______________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER MODE,
f
= 3100MHz to 3900MHz, LOW-SIDE LO INJECTION)
RF
(Typical Application Circuit with tuning elements outlined in Table 1, V
= 4.75V to 5.25V, RF and LO ports are driven from 50I
CC
sources, P = -3dBm to +3dBm, P = 0dBm, f = 3100MHz to 3900MHz, f = 2800MHz to 3600MHz, f = 300MHz, f > f ,
LO
LO
RF
RF
LO
IF
RF
T
T
= -40NC to +85NC. Typical values are at V
= 5.0V, P = 0dBm, P = 0dBm, f = 3500MHz, f = 3200MHz, f = 300MHz,
CC RF LO RF LO IF
C
C
= +25NC. All parameters are guaranteed by design, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS
= +25NC (Notes 7, 8)
MIN
TYP
MAX
UNITS
Conversion Loss
L
T
7.2
7.7
8.5
dB
C
C
f
= 3100MHz to 3900MHz, over any
RF
0.15
0.25
100MHz band
Loss Variation vs. Frequency
DL
dB
C
f
= 3100MHz to 3900MHz, over any
RF
200MHz band
Conversion Loss Temperature
Coefficient
f
T
= 3100MHz to 3900MHz,
= -40NC to +85NC
RF
TC
0.01
21
dB/NC
CL
C
Input Compression Point
IP
1dB
(Note 9)
dBm
f
- f
= 1MHz, P = 0dBm per tone
RF
RF1 RF2
28.3
30.0
32.5
(Note 7, 8)
Third-Order Input Intercept
Point
IIP3
dBm
dBm
f
P
= 3500MHz, f
= 0dBm per tone. T = +25NC
- f
= 1MHz,
RF
RF1 RF2
32.5
RF
C
(Notes 7, 8)
Third-Order Input Intercept
Point Variation Over
Temperature
f = 3100MHz to 3900MHz, f = 300MHz,
RF IF
f
- f
= 1MHz, P = 0dBm per tone,
±0.5
RF1 RF2
RF
T
= -40NC to +85NC
C
Single sideband, no blockers present
(Notes 7, 10)
8.5
8.5
10
Noise Figure
NF
dB
dB/NC
dB
SSB
Single sideband, no blockers present,
9.2
T
= +25NC (Notes 7, 10)
C
Noise Figure Temperature
Coefficient
Single sideband, no blockers present,
= -40NC to +85NC
TC
0.018
NF
T
C
+8dBm blocker tone applied to RF port,
Noise Figure Under Blocking
Conditions
f
f
= 3750MHz, f = 3500MHz,
BLOCKER RF
NF
17.5
20
B
= 3200MHz, P = 0dBm, V = 5.0V,
CC
LO
LO
T
= +25NC (Notes 7, 10, 11)
C
P
= -10dBm
RF
f
= f
+
+
SPUR
LO
62
52
68
58
(Notes 7, 10)
150MHz,
T
= +25NC
C
P
P
= 0dBm (Notes 7, 8)
= -10dBm
RF
2RF - 2LO Spurious Rejection
2 x 2
dBc
RF
60
50
68
58
f
= f
LO
SPUR
(Notes 7, 10)
150MHz
P
RF
= 0dBm (Notes 7, 8)
_______________________________________________________________________________________
3
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER MODE,
f
= 3100MHz to 3900MHz, LOW-SIDE LO INJECTION) (continued)
RF
(Typical Application Circuit with tuning elements outlined in Table 1, V
= 4.75V to 5.25V, RF and LO ports are driven from 50I
CC
sources, P = -3dBm to +3dBm, P = 0dBm, f = 3100MHz to 3900MHz, f = 2800MHz to 3600MHz, f = 300MHz, f > f ,
LO
LO
RF
RF
LO
IF
RF
T
T
= -40NC to +85NC. Typical values are at V
= +25NC. All parameters are guaranteed by design, unless otherwise noted.) (Note 6)
= 5.0V, P = 0dBm, P = 0dBm, f = 3500MHz, f = 3200MHz, f = 300MHz,
CC RF LO RF LO IF
C
C
PARAMETER
SYMBOL
CONDITIONS
= -10dBm
MIN
82
TYP
89
MAX
UNITS
P
RF
f
= f
+
+
SPUR
LO
(Notes 7, 10)
100MHz,
T
= +25NC
C
P
= 0dBm (Notes 7, 8)
62
69
RF
3RF - 3LO Spurious Rejection
3 x 3
dBc
P
RF
= -10dBm
81
89
69
16
f
= f
LO
SPUR
(Notes 7, 10)
= 0dBm (Notes 7, 8)
100MHz
P
RF
61
LO on and IF terminated into a matched
impedance
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
RL
RL
dB
dB
I
RF
LO
IF
RF and IF terminated into a matched
impedance
14
50
Nominal differential impedance at the IC’s
IF outputs
Z
RF terminated into 50I, LO driven by a
50Isource, IF transformed to 50Iusing
external components shown in the Typical
Application Circuit
IF Output Return Loss
RL
16
dB
IF
RF-to-IF Isolation
f
f
= 3500MHz, P = +3dBm (Note 8)
33
42
dB
RF
LO
LO
= 2500MHz to 4000MHz, P = +3dBm
LO
LO Leakage at RF Port
-31
dBm
(Notes 7, 8)
2LO Leakage at RF Port
LO Leakage at IF Port
P
P
= +3dBm
-35
-28
dBm
dBm
LO
LO
= +3dBm (Note 8)
4
______________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER MODE,
f
= 3100MHz to 3900MHz, LOW-SIDE LO INJECTION)
RF
(Typical Application Circuit with tuning elements outlined in Table 1, RF and LO ports are driven from 50I sources. Typical values
are at V
= 3.3V, P = 0dBm, P = 0dBm, f = 3500MHz, f = 3200MHz, f = 300MHz, T = +25NC, unless otherwise noted.)
RF LO RF LO IF C
CC
(Note 6)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Loss
L
7.7
dB
C
f
= 3100MHz to 3900MHz, over any
RF
Loss Variation vs. Frequency
DL
0.1
dB
C
100MHz band
Conversion Loss Temperature
Coefficient
f
T
= 3100MHz to 3900MHz,
= -40NC to +85NC
RF
TC
0.009
19.5
29.5
dB/NC
dBm
dBm
CL
C
Input Compression Point
IP
1dB
(Note 9)
Third-Order Input Intercept
Point
IIP3
f
- f
= 1MHz, P = 0dBm per tone
RF1 RF2 RF
Third-Order Input Intercept
Variation Over Temperature
f
T
- f
= 1MHz, P = 0dBm per tone,
RF1 RF2 RF
±0.2
8.5
dB
dB
= -40NC to +85NC
C
Noise Figure
NF
Single sideband, no blockers present
SSB
Noise Figure Temperature
Coefficient
Single sideband, no blockers present,
TC
0.018
dB/NC
NF
T
= -40NC to +85NC
C
P
P
P
P
= -10dBm
= 0dBm
69
64
f
= f
+
RF
RF
RF
RF
SPUR
LO
2RF - 2LO Spurious Rejection
3RF - 3LO Spurious Rejection
RF Input Return Loss
2 x 2
3 x 3
dBc
dBc
dB
dB
I
150MHz
= -10dBm
= 0dBm
73.3
63.3
f
= f
+
SPUR
LO
100MHz
LO on and IF terminated into a matched
impedance
RL
RL
18
19
50
RF
LO
IF
RF and IF terminated into a matched
impedance
LO Input Return Loss
Nominal differential impedance at the IC’s
IF outputs
IF Output Impedance
Z
RF terminated into 50I, LO driven by a
50Isource, IF transformed to 50Iusing
external components shown in the Typical
Application Circuit
IF Output Return Loss
RL
14.5
dB
IF
f
P
= 3100MHz to 3900MHz,
RF
RF-to-IF Isolation
41
-30
dB
= +3dBm
LO
LO
LO
LO
f
P
= 2800MHz to 3600MHz,
= +3dBm
LO
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
dBm
dBm
dBm
f
P
= 2800MHz to 3600MHz,
= +3dBm
LO
-25.6
-27
f
P
= 2800MHz to 3600MHz,
= +3dBm
LO
_______________________________________________________________________________________
5
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER MODE,
f
= 2300MHz to 2900MHz, HIGH-SIDE LO INJECTION)
RF
(Typical Application Circuit with tuning elements outlined in Table 1, RF and LO ports are driven from 50I sources. Typical values
are at V
= 5.0V, P = 0dBm, P = 0dBm, f = 2600MHz, f = 2900MHz, f = 300MHz, T = +25NC, unless otherwise noted.)
RF LO RF LO IF C
CC
(Note 6)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Loss
L
8.1
dB
C
f
= 2300MHz to 2900MHz, over any
RF
Loss Variation vs. Frequency
DL
0.15
0.008
34
dB
dB/NC
dBm
dB
C
100MHz band
Conversion Loss Temperature
Coefficient
f
T
= 2300MHz to 2900MHz,
= -40NC to +85NC
RF
TC
CL
C
Third-Order Input Intercept
Point
IIP3
f
- f
= 1MHz, P = 0dBm per tone
RF1 RF2 RF
Third-Order Input Intercept
Variation Over Temperature
f
T
- f
= 1MHz, P = 0dBm per tone,
RF1 RF2 RF
±0.2
= -40NC to +85NC
C
P
P
P
P
= -10dBm
= 0dBm
67
62
79
69
RF
RF
RF
RF
2LO - 2RF Spurious Rejection
3LO - 3RF Spurious Rejection
RF Input Return Loss
2 x 2
3 x 3
f
= f - 150MHz
dBc
dBc
dB
SPUR
LO
= -10dBm
= 0dBm
f
= f - 100MHz
SPUR
LO
LO on and IF terminated into a matched
impedance
RL
RL
23
17
50
RF
LO
IF
RF and IF terminated into a matched
impedance
LO Input Return Loss
dB
Nominal differential impedance at the IC’s
IF outputs
IF Output Impedance
Z
I
RF terminated into 50I, LO driven by a
50Isource, IF transformed to 50Iusing
external components shown in the Typical
Application Circuit
IF Output Return Loss
RL
13.6
dB
IF
f
P
= 2300MHz to 2900MHz,
RF
RF-to-IF Isolation
39
dB
= +3dBm
LO
LO
LO
LO
f
P
= 2600MHz to 3200MHz,
= +3dBm
LO
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
-29.5
-43
dBm
dBm
dBm
f
P
= 2600MHz to 3200MHz,
= +3dBm
LO
f
P
= 2600MHz to 3200MHz,
= +3dBm
LO
-28.6
6
______________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (DOWNCONVERTER MODE,
f
= 3100MHz to 3900MHz, HIGH-SIDE LO INJECTION)
RF
(Typical Application Circuit with tuning elements outlined in Table 1, RF and LO ports are driven from 50I sources. Typical values
are at V
= 5.0V, P = 0dBm, P = 0dBm, f = 3500MHz, f = 3800MHz, f = 300MHz, T = +25NC, unless otherwise noted.)
RF LO RF LO IF C
CC
(Note 6)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Loss
L
7.8
dB
C
f
= 3100MHz to 3900MHz, over any
RF
Loss Variation vs. Frequency
DL
0.15
0.008
31.5
dB
dB/NC
dBm
dB
C
100MHz band
Conversion Loss Temperature
Coefficient
f
T
= 3100MHz to 3900MHz,
= -40NC to +85NC
RF
TC
CL
C
Third-Order Input Intercept
Point
IIP3
f
f
- f
= 1MHz, P = 0dBm per tone
RF1 RF2 RF
Third-Order Input Intercept
Variation Over Temperature
- f
= 1MHz, P = 0dBm per tone,
RF1 RF2 RF
±0.2
T
= -40NC to +85NC
C
P
P
P
P
= -10dBm
= 0dBm
67
62
RF
RF
RF
RF
2LO - 2RF Spurious Rejection
3LO - 3RF Spurious Rejection
RF Input Return Loss
2 x 2
3 x 3
f
= f - 150MHz
dBc
dBc
dB
SPUR
LO
= -10dBm
= 0dBm
76.7
66.7
f
= f - 100MHz
SPUR
LO
LO on and IF terminated into a matched
impedance
RL
RL
17.7
16.3
50
RF
LO
IF
RF and IF terminated into a matched
impedance
LO Input Return Loss
dB
Nominal differential impedance at the IC’s
IF outputs
IF Output Impedance
Z
I
RF terminated into 50I, LO driven by a
50Isource, IF transformed to 50Iusing
external components shown in the Typical
Application Circuit
IF Output Return Loss
RL
15
dB
IF
f
P
= 3100MHz to 3900MHz,
RF
RF-to-IF Isolation
41
-30
dB
= +3dBm
LO
LO
LO
LO
f
P
= 3400MHz to 4200MHz,
= +3dBm
LO
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
dBm
dBm
dBm
f
P
= 3400MHz to 4200MHz,
= +3dBm
LO
-21
f
P
= 3400MHz to 4200MHz,
= +3dBm
LO
-27.2
_______________________________________________________________________________________
7
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (UPCONVERTER OPERATION,
f
= 3100MHz to 3900MHz, LOW-SIDE LO INJECTION)
RF
(Typical Application Circuit with tuning elements outlined in Table 2, RF and LO ports are driven from 50I sources. Typical values
are for T = +25NC, V
= 5.0V, P = 0dBm, P = 0dBm, f = 3500MHz, f = 3300MHz, f = 200MHz, unless otherwise noted.)
C
CC
IF
LO
RF
LO
IF
PARAMETER
Conversion Loss
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
L
7.7
dB
C
f
= 3100MHz to 3900MHz, over any
RF
0.2
100MHz band
Conversion Loss Variation vs.
Frequency
DL
dB
C
f
= 3100MHz to 3900MHz, over any
RF
0.25
0.01
33.5
±0.2
200MHz band
Conversion Loss Temperature
Coefficient
TC
T
= -40NC to +85NC
dB/NC
dBm
dB
CL
C
f
P
= 200MHz, f
= 201MHz,
IF1
IF2
Input Third-Order Intercept Point
IIP3
= 0dBm/tone
IF
f
P
= 200MHz, f
IF2
= 201MHz,
IF1
IIP3 Variation with T
C
= 0dBm/tone, T = -40NC to +85NC
C
IF
LO - 2IF
LO + 2IF
LO - 3IF
LO + 3IF
61.6
60.2
78.2
80.3
-165
LO ± 2IF Spur
1 x 2
1 x 3
dBc
LO ± 3IF Spur
dBc
Output Noise Floor
P
OUT
= 0dBm (Note 11)
dBm/Hz
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (UPCONVERTER OPERATION,
= 3100MHz to 3900MHz, LOW-SIDE LO INJECTION)
f
RF
(Typical Application Circuit with tuning elements outlined in Table 2, RF and LO ports are driven from 50I sources. Typical values
are for T = +25NC, V = 3.3V, P = 0dBm, P = 0dBm, f = 3500MHz, f = 3200MHz, f = 200MHz, unless otherwise noted.)
C
CC
IF
LO
RF
LO
IF
PARAMETER
Conversion Loss
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
L
8
dB
C
f
= 3100MHz to 3900MHz, over any
RF
0.2
100MHz band
Conversion Loss Variation vs.
Frequency
DL
dB
C
f
= 3100MHz to 3900MHz, over any
RF
0.25
0.01
29.5
±0.2
200MHz band
Conversion Loss Temperature
Coefficient
TC
T
= -40NC to +85NC
dB/NC
dBm
dB
CL
C
f
= 200MHz, f
= 201MHz,
IF1
IF2
Input Third-Order Intercept Point
IIP3
P
= 0dBm/tone
IF
f
P
= 200MHz, f = 201MHz,
IF2
= 0dBm/tone, T = -40NC to +85NC
C
IF1
IIP3 Variation with T
C
IF
8
______________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (UPCONVERTER OPERATION,
f
= 3100MHz to 3900MHz, LOW-SIDE LO INJECTION) (continued)
RF
(Typical Application Circuit with tuning elements outlined in Table 2, RF and LO ports are driven from 50I sources. Typical values
are for T = +25NC, V = 3.3V, P = 0dBm, P = 0dBm, f = 3500MHz, f = 3200MHz, f = 200MHz, unless otherwise noted.)
C
CC
IF
LO
RF
LO
IF
PARAMETER
LO ± 2IF Spur
SYMBOL
CONDITIONS
MIN
TYP
58.9
57.8
69.4
69.5
-165
MAX
UNITS
LO - 2IF
1 x 2
dBc
LO + 2IF
LO - 3IF
LO + 3IF
LO ± 3IF Spur
1 x 3
dBc
Output Noise Floor
P
OUT
= 0dBm (Note 11)
dBm/Hz
Note 5: Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating
Characteristics.
Note 6: All limits reflect losses of external components, including a 0.5dB loss at f = 300MHz due to the 1:1 impedance trans-
IF
former. Output measurements were taken at IF outputs of the Typical Application Circuit.
Note 7: Guaranteed by design and characterization.
Note 8: 100% production tested for functional performance.
Note 9: Maximum reliable continuous input power applied to the RF or IF port of this device is +20dBm from a 50I source.
Note 10: Not production tested.
Note 11: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Typical Operating Characteristics
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
10
9
10
9
10
9
T
C
= +85°C
T
C
= +25°C
8
8
8
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
7
7
LO
7
T
= -40°C
C
6
6
6
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
_______________________________________________________________________________________
9
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
37
35
33
31
29
27
37
35
33
31
29
27
37
35
33
31
29
27
P
= 0dBm/TONE
P
= 0dBm/TONE
P
= 0dBm/TONE
RF
RF
RF
P
= +3dBm
V
= 5.25V
LO
CC
T
= -40°C
C
T
= +25°C
C
V
= 5.0V
CC
P
= 0dBm
3600
LO
T
= +85°C
C
V
= 4.75V
CC
P
= -3dBm
LO
3000
3200
3400
3600
3800
4000
3000
3200
3400
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2RF - 2LO RESPONSE vs. RF FREQUENCY
2RF - 2LO RESPONSE vs. RF FREQUENCY
2RF - 2LO RESPONSE vs. RF FREQUENCY
75
70
65
60
55
50
75
70
65
60
55
50
75
70
65
60
55
50
P
= 0dBm
P
= 0dBm
P
= 0dBm
RF
RF
RF
V
= 5.25V
P
= 0dBm
CC
LO
T
= +85°C
P
= +3dBm
C
LO
V
= 4.75V
CC
T
= -40°C
C
P
= -3dBm
3400
LO
V
= 5.0V
T
C
= +25°C
CC
3000
3200
3400
3600
3800
4000
3000
3200
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
3RF - 3LO RESPONSE vs. RF FREQUENCY
3RF - 3LO RESPONSE vs. RF FREQUENCY
85
75
65
55
85
75
65
55
85
75
65
55
P
= 0dBm
P
= 0dBm
P
= 0dBm
RF
RF
RF
T
= -40°C
P
= +3dBm
V
= 5.25V
C
LO
CC
T
= +25°C
C
P
= 0dBm
3200
LO
V
= 5.0V
CC
P
= -3dBm
V
= 4.75V
CC
LO
T
C
= +85°C
3000
3200
3400
3600
3800
4000
3000
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
10 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
11
10
9
11
10
9
11
10
9
T
C
= +85°C
T
= +25°C
C
V
= 5.25V
CC
V
CC
= 4.75V
8
8
8
V
= 5.0V
CC
P
= -3dBm, 0dBm, +3dBm
LO
7
7
7
T
= -40°C
C
6
6
6
5
5
5
3000
3000
2700
3200
3400
3600
3800
4000
3000
3000
2700
3200
3400
3600
3800
4000
4000
3700
3000
3000
2700
3200
3400
3600
3800
4000
4000
3700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P vs. RF FREQUENCY
1dB
1dB
1dB
25
23
21
19
17
25
23
21
19
17
25
23
21
19
17
T
C
= -40°C
P
= +3dBm
V
CC
= 5.25V
LO
T
= +25°C
C
V
CC
= 5.0V
P
= -3dBm
LO
P
LO
= 0dBm
T
C
= +85°C
V
= 4.75V
3800
CC
3200
3400
3600
3800
4000
3200
3400
3600
3800
3200
3400
3600
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
T
C
= -40°C
T
C
= +25°C
3300
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= +85°C
2900
3100
3500
3700
2900
3100
3300
3500
2900
3100
3300
3500
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
______________________________________________________________________________________ 11
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
50
40
30
20
60
50
40
30
20
60
50
40
30
20
T
= +85°C
C
T
C
= +25°C
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
T
C
= -40°C
3000
2500
2500
3200
3400
3600
3800
4000
3000
2500
2500
3200
3400
3600
3800
4000
4000
4000
3000
2500
2500
3200
3400
3600
3800
4000
4000
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
-20
-30
-40
-50
-20
-30
-40
-50
T
= +85°C
= -40°C
C
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
T
C
= +25°C
T
C
3000
3500
4000
3000
3500
3000
3500
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
-20
-30
-40
-50
-20
-30
-40
-50
P
= +3dBm
LO
T
= -40°C
C
V
= 4.75V
CC
P
= 0dBm
LO
T
C
= +25°C
V
CC
= 5.0V
P
= -3dBm
LO
T
= +85°C
C
V
= 5.25V
CC
3000
3500
4000
3000
3500
3000
3500
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
12 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
5
0
5
f
IF
= 300MHz
f
LO
= 3200MHz
10
15
20
25
30
10
15
20
25
30
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs. TEMPERATURE (T )
C
0
10
20
30
150
145
140
135
130
125
120
V
CC
= 5.25V
P
= -3dBm
LO
V
= 5.0V
CC
V
= 4.75V
CC
P
LO
= +3dBm
P
= 0dBm
LO
2500
3000
3500
4000
-40
-15
10
35
60
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
______________________________________________________________________________________ 13
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 3.3V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
10
9
10
9
10
9
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= +85°C
T
= +25°C
C
8
8
8
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
LO
7
7
7
T
C
= -40°C
6
6
6
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
34
32
30
28
26
24
34
32
30
28
26
24
34
32
30
28
26
24
V
= 3.3V
V
= 3.3V
CC
CC
P
= 0dBm/TONE
RF
P
= 0dBm/TONE
P
RF
= 0dBm/TONE
RF
V
= 3.6V
CC
T
= +85°C
= +25°C
C
T
C
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= -40°C
V
= 3.3V
CC
V
= 3.0V
CC
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2RF - 2LO RESPONSE vs. RF FREQUENCY
2RF - 2LO RESPONSE vs. RF FREQUENCY
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
70
60
50
80
70
60
50
80
70
60
50
V
P
= 3.3V
= 0dBm
V
P
= 3.3V
= 0dBm
P
= 0dBm
CC
RF
CC
RF
RF
P
= +3dBm
LO
V
= 3.6V
CC
V
= 3.3V
CC
T
C
= +85°C
P
= 0dBm
3800
LO
T
C
= +25°C
3200
T
= -40°C
V
= 3.0V
C
CC
P
= -3dBm
3400
LO
3000
3400
3600
3800
4000
3000
3200
3600
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
14 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 3.3V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
3RF - 3LO RESPONSE vs. RF FREQUENCY
3RF - 3LO RESPONSE vs. RF FREQUENCY
3RF - 3LO RESPONSE vs. RF FREQUENCY
75
65
55
45
75
65
55
45
75
65
55
45
V
= 3.3V
= 0dBm
CC
V
= 3.3V
= 0dBm
P
= 0dBm
RF
CC
P
RF
P
RF
V
= 3.6V
CC
T
= +25°C
C
T
C
= -40°C
P
= -3dBm, 0dBm, +3dBm
V
= 3.3V
LO
CC
V
= 3.0V
CC
T
= +85°C
C
3000
3200
3400
3600
3800
4000
3000
3000
3000
3200
3400
3600
3800
4000
3000
3000
3000
3200
3400
3600
3800
4000
4000
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
11
10
9
11
10
9
11
10
9
V
= 3.3V
V
CC
= 3.3V
CC
T
= +85°C
C
V
= 3.0V
CC
T
= +25°C
P
= -3dBm
LO
C
V
= 3.3V
P
= 0dBm
CC
LO
8
8
8
V
= 3.6V
CC
P
= +3dBm
LO
7
7
7
T
= -40°C
C
6
6
6
5
5
5
3000
3200
3400
3600
3800
4000
3200
3400
3600
3800
4000
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P vs. RF FREQUENCY
1dB
1dB
1dB
23
21
19
17
15
23
21
19
17
15
23
21
19
17
15
V
= 3.3V
CC
V
= 3.3V
CC
T
= -40°C
C
V
CC
= 3.6V
T
C
= +25°C
V
CC
= 3.3V
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= +85°C
V
CC
= 3.0V
3000
3200
3400
3600
3800
4000
3200
3400
3600
3800
4000
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 15
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 3.3V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= -40°C
T
= +25°C
C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 3.0V, 3.3V, 3.6V
CC
T
C
= +85°C
2700
2900
3100
3300
3500
3700
2700
2900
3100
3300
3500
3700
2700
2900
3100
3300
3500
3700
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
50
40
30
20
60
50
40
30
20
60
50
40
30
20
V
= 3.3V
V
= 3.3V
CC
CC
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
T
= +25°C
LO
C
T
C
= -40°C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
-20
-30
-40
-50
-20
-30
-40
-50
V
CC
= 3.3V
V
= 3.3V
CC
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
LO
T
C
= -40°C, +25°C, +85°C
2500
3000
3500
4000
2500
3000
3500
4000
2500
3000
3500
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
16 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 3.3V, f
= 3000MHz to
RF
CC
4000MHz, LO is low-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-15
-25
-35
-45
-55
-15
-25
-35
-45
-55
-15
-25
-35
-45
-55
V
= 3.3V
V
= 3.3V
CC
V
= 3.0V
= 3.6V
T
C
= -40°C
CC
CC
V
CC
= 3.3V
T
= +25°C
C
V
T
C
= +85°C
CC
P
= -3dBm, 0dBm, +3dBm
LO
2500
3000
3500
4000
2500
3000
3500
4000
2500
3000
3500
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
5
0
5
V
CC
= 3.3V
f
LO
= 3200MHz
f
IF
= 300MHz
10
15
20
25
30
10
15
20
25
30
V
= 3.0V, 3.3V, 3.6V
CC
P
= -3dBm, 0dBm, +3dBm
LO
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs.TEMPERATURE (T )
C
0
10
20
30
135
130
125
120
115
110
105
V
= 3.3V
CC
V
CC
= 3.6V
P
= -3dBm
LO
V
CC
= 3.3V
P
= 0dBm
LO
V
= 3.0V
CC
P
= +3dBm
LO
2500
3000
3500
4000
-40
-15
10
35
60
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
______________________________________________________________________________________ 17
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 2300MHz to
RF
CC
2900MHz, LO is high-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
10
9
10
9
10
9
T
C
= +85°C
T
C
= +25°C
8
8
8
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
7
7
7
T
C
= -40°C
6
6
6
2300
2450
2600
2750
2900
2900
2900
2300
2450
2600
2750
2900
2900
2900
2300
2450
2600
2750
2900
2900
2900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
37
35
33
31
29
27
37
35
33
31
29
27
37
35
33
31
29
27
P
= 0dBm/TONE
RF
P
= 0dBm/TONE
P
= 0dBm/TONE
T
C
= -40°C
RF
RF
P
= +3dBm
LO
V
= 5.25V
CC
V
= 5.0V
CC
T
C
= +25°C
P
= 0dBm
LO
P
= -3dBm
V
CC
= 4.75V
LO
T
C
= +85°C
2450
2300
2600
2750
2300
2450
2600
2750
2300
2450
2600
2750
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE
vs. RF FREQUENCY
2LO - 2RF RESPONSE
vs. RF FREQUENCY
2LO - 2RF RESPONSE
vs. RF FREQUENCY
80
70
60
50
80
70
60
50
80
70
60
50
P
= 0dBm
P
= 0dBm
P
= 0dBm
RF
RF
RF
T
= +85°C
C
P
LO
= +3dBm
V
= 4.75V
CC
V
= 5.0V
CC
P
= 0dBm
LO
T
C
= +25°C
P
= -3dBm
LO
V
= 5.25V
CC
T
C
= -40°C
2300
2450
2600
2750
2300
2450
2600
2750
2300
2450
2600
2750
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
18 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 2300MHz to
RF
CC
2900MHz, LO is high-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
3LO - 3RF RESPONSE
vs. RF FREQUENCY
3LO - 3RF RESPONSE
vs. RF FREQUENCY
3LO - 3RF RESPONSE
vs. RF FREQUENCY
85
75
65
55
85
75
65
55
85
75
65
55
P
= 0dBm
P
= 0dBm
P
= 0dBm
RF
RF
RF
T
= +85°C
C
P
= +3dBm
= -3dBm
LO
T
C
= +25°C
V
= 5.25V
CC
P
LO
P
LO
= 0dBm
V
CC
= 4.75V
T
C
= -40°C
V
= 5.0V
CC
2300
2450
2600
2750
2900
2300
2450
2600
2750
2900
2300
2450
2600
2750
2900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
T
C
= +25°C
V
= 4.75V
CC
T
C
= +85°C
P
= -3dBm, 0dBm, +3dBm
V
= 5.0V
LO
CC
T
C
= -40°C
V
= 5.25V
2750
CC
2600
2750
2900
3050
3200
2600
2750
2900
3050
3200
2600
2900
3050
3200
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
50
40
30
20
60
50
40
30
20
60
50
40
30
20
T
= -40°C
C
T
= +25°C
C
V
= 4.75V, 5.0V, 5.25V
P
= -3dBm, 0dBm, +3dBm
CC
LO
T
C
= +85°C
2300
2450
2600
2750
2900
2300
2450
2600
2750
2900
2300
2450
2600
2750
2900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 19
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 2300MHz to
RF
CC
2900MHz, LO is high-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
-20
-30
-40
-50
-20
-30
-40
-50
T
C
= +85°C
T
C
= +25°C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= -40°C
2300
2725
3150
3575
4000
2300
2725
3150
3575
4000
2300
2725
3150
3575
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
-60
-20
-30
-40
-50
-60
-20
-30
-40
-50
-60
V
= 5.25V
T
C
= -40°C
CC
P
LO
= 0dBm
P
= +3dBm
LO
T
C
= +25°C
V
= 5.0V
CC
P
= -3dBm
LO
T
C
= +85°C
V
= 4.75V
CC
2300
2725
3150
3575
4000
2300
2725
3150
3575
4000
2300
2725
3150
3575
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
20 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 2300MHz to
RF
CC
2900MHz, LO is high-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
5
0
5
f
= 300MHz
V
= 4.75V, 5.0V, 5.25V
IF
CC
f
= 3200MHz
LO
10
15
20
25
30
10
15
20
25
30
P
= -3dBm, 0dBm, +3dBm
LO
f
= 2900MHz
LO
f
LO
= 2600MHz
2300
2450
2600
2750
2900
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs. TEMPERATURE (T )
C
0
10
20
30
40
150
145
140
135
130
125
120
V
CC
= 5.25V
P
= -3dBm
LO
V
CC
= 5.0V
P
= 0dBm
LO
P
= +3dBm
LO
V
CC
= 4.75V
2500
3000
3500
4000
-40
-15
10
35
60
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
______________________________________________________________________________________ 21
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is high-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
10
9
10
9
10
9
T
= +25°C
C
T
C
= +85°C
8
8
8
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
LO
CC
7
7
7
T
= -40°C
C
6
6
6
3000
3200
3400
3600
3800
4000
4000
4000
3000
3200
3400
3600
3800
4000
4000
4000
3000
3200
3400
3600
3800
4000
4000
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
37
35
33
31
29
27
37
35
33
31
29
27
37
35
33
31
29
27
P
= 0dBm/TONE
P
= 0dBm/TONE
P = 0dBm/TONE
RF
RF
RF
V
= 5.0V
CC
T
C
= -40°C
V
= 5.25V
P
= +3dBm
CC
LO
P
= -3dBm
3200
T
= +25°C
LO
C
P
= 0dBm
3600
LO
V
= 4.75V
CC
T
= +85°C
C
3000
3200
3400
3600
3800
3000
3400
3800
3000
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE
vs. RF FREQUENCY
2LO - 2RF RESPONSE
vs. RF FREQUENCY
2LO - 2RF RESPONSE
vs. RF FREQUENCY
80
70
60
50
80
70
60
50
80
70
60
50
P
= 0dBm
P
= 0dBm
P
= 0dBm
RF
RF
RF
V
= 5.25V
CC
P
= +3dBm
LO
V
= 5.0V
CC
T
= +85°C
C
P
= 0dBm
LO
V
= 4.75V
CC
T
= +25°C
C
T
C
= -40°C
P
= -3dBm
LO
3000
3200
3400
3600
3800
3000
3200
3400
3600
3800
3000
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
22 _____________________________________________________________________________________
SiGe, High-Linearity, 3000MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is high-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
3LO - 3RF RESPONSE
vs. RF FREQUENCY
3LO - 3RF RESPONSE
vs. RF FREQUENCY
3LO - 3RF RESPONSE
vs. RF FREQUENCY
85
75
65
55
85
75
65
55
85
75
65
55
P
= 0dBm
P
= 0dBm
P
= 0dBm
RF
RF
RF
V
CC
= 5.25V
P
= +3dBm
T
C
= -40°C
LO
P
LO
= 0dBm
V
CC
= 5.0V
T
C
= +25°C
3600
V
CC
= 4.75V
P
= -3dBm
LO
T
= +85°C
C
3000
3200
3400
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
T
C
= -40°C
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
LO
CC
T
C
= +25°C
3700
T
= +85°C
4100
C
3300
3500
3900
4300
3300
3500
3700
3900
4100
4300
3300
3500
3700
3900
4100
4300
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
50
40
30
20
60
50
40
30
20
60
50
40
30
20
T
C
= +25°C, +85°C
V = 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= -40°C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 23
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is high-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
-20
-30
-40
-50
-20
-30
-40
-50
T
C
= +85°C
T
C
= +25°C
V
CC
= 4.75V, 5.0V, 5.25V
4000
P
= -3dBm, 0dBm, +3dBm
4000
LO
T
C
= -40°C
3000
3500
4000
4500
3000
3500
4500
3000
3500
4500
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
P
LO
= +3dBm
T
C
= -40°C
P
= 0dBm
LO
V
CC
= 4.75V
T
= +25°C
C
P
= -3dBm
LO
T
C
= +85°C
V
CC
= 5.0V
V
CC
= 5.25V
3000
3400
3800
4200
3000
3400
3800
4200
3000
3400
3800
4200
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
24 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, Downconverter Mode, V
= 5.0V, f
= 3000MHz to
RF
CC
4000MHz, LO is high-side injected for a 300MHz IF, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
5
0
5
f
= 300MHz
f
= 3800MHz
LO
IF
10
15
20
25
30
10
15
20
25
30
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
SUPPLY CURRENT
vs. TEMPERATURE (T )
LO PORT RETURN LOSS
vs. LO FREQUENCY
C
0
10
20
30
40
50
150
145
140
135
130
125
120
P
= -3dBm
LO
V
= 5.25V
CC
P
= 0dBm
LO
V
CC
= 5.0V
P
= +3dBm
LO
V
CC
= 4.75V
3000
3500
4000
4500
-40
-15
10
35
60
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
______________________________________________________________________________________ 25
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 2, Upconverter Mode, V
= 5.0V, f = 3000MHz to 4000MHz,
RF
CC
LO is low-side injected, f = 200MHz, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
IF
IF
LO
C
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
10
9
10
9
10
9
T
C
= +85°C
T
= +25°C
C
8
8
8
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
7
7
7
T
C
= -40°C
6
6
6
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
36
34
32
30
28
36
34
32
30
28
36
34
32
30
28
P
= 0dBm/TONE
P
= 0dBm/TONE
P = 0dBm/TONE
IF
IF
IF
T
= -40°C
P
= +3dBm
V
= 5.25V
C
LO
P
CC
T
C
= +25°C
= 0dBm
V
= 5.0V
CC
LO
T
C
= +85°C
P
= -3dBm
LO
V
= 4.75V
CC
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO - 2IF RESPONSE vs. RF FREQUENCY
LO - 2IF RESPONSE vs. RF FREQUENCY
LO - 2IF RESPONSE vs. RF FREQUENCY
85
75
65
55
45
85
75
65
55
45
85
75
65
55
45
P
= 0dBm
P
= 0dBm
P = 0dBm
IF
IF
IF
V
= 5.0V
CC
T
= +85°C
C
P = +3dBm
LO
T
= +25°C
V
= 5.25V
C
CC
V
= 4.75V
CC
P
= 0dBm
3400
LO
P
= -3dBm
LO
T
= -40°C
3600
C
3000
3200
3400
3800
4000
3000
3200
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
26 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 2, Upconverter Mode, V
= 5.0V, f = 3000MHz to 4000MHz,
RF
CC
LO is low-side injected, f = 200MHz, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
IF
IF
LO
C
LO + 2IF RESPONSE vs. RF FREQUENCY
LO + 2IF RESPONSE vs. RF FREQUENCY
LO + 2IF RESPONSE vs. RF FREQUENCY
85
75
65
55
45
85
75
65
55
45
85
75
65
55
45
V
= 5.0V
CC
P
= 0dBm
P
= 0dBm
P = 0dBm
IF
IF
IF
V
= 5.25V
CC
V
= 4.75V
CC
T
= +25°C
C
P
= 0dBm
P
LO
T
C
= +85°C
P
= +3dBm
3800
LO
T
= -40°C
3600
C
= -3dBm
LO
3000
3200
3400
3800
4000
3000
3200
3400
3600
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO - 3IF RESPONSE vs. RF FREQUENCY
LO - 3IF RESPONSE vs. RF FREQUENCY
LO - 3IF RESPONSE vs. RF FREQUENCY
100
90
80
70
60
100
90
80
70
60
100
90
80
70
60
P
= 0dBm
P
= 0dBm
P = 0dBm
IF
IF
IF
T
= -40°C
C
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= +25°C
T
= +85°C
3600
P
= -3dBm, 0dBm, +3dBm
C
LO
3000
3200
3400
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO + 3IF RESPONSE vs. RF FREQUENCY
LO + 3IF RESPONSE vs. RF FREQUENCY
LO + 3IF RESPONSE vs. RF FREQUENCY
100
90
80
70
60
100
90
80
70
60
100
90
80
70
60
P
= 0dBm
P
= 0dBm
P = 0dBm
IF
IF
IF
T
= -40°C
C
V
= 5.25V
CC
V
= 5.0V
CC
T
= +25°C
C
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= +85°C
3200
V
= 4.75V
3200
CC
3000
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 27
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 2, Upconverter Mode, V
= 5.0V, f = 3000MHz to 4000MHz,
RF
CC
LO is low-side injected, f = 200MHz, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
IF
IF
LO
C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
T
C
= +85°C
T = +25°C
C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= -40°C
2800
3000
3200
3400
3600
3800
2800
3000
3200
3400
3600
3800
2800
3000
3200
3400
3600
3800
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
IF LEAKAGE AT RF PORT
vs. LO FREQUENCY
IF LEAKAGE AT RF PORT
vs. LO FREQUENCY
IF LEAKAGE AT RF PORT
vs. LO FREQUENCY
-50
-60
-50
-60
-50
-60
T
C
= -40°C
V
= 5.25V
CC
P
= +3dBm
LO
-70
-70
-70
-80
-80
-80
V
= 5.0V
V
= 4.75V
CC
T
C
= +25°C
CC
P
= 0dBm
LO
T
C
= +85°C
3200
P
LO
= -3dBm
-90
-90
-90
-100
-100
-100
2800
3000
3400
3600
3800
2800
3000
3200
3400
3600
3800
2800
3000
3200
3400
3600
3800
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
28 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 2, Upconverter Mode, V
= 5.0V, f = 3000MHz to 4000MHz,
RF
CC
LO is low-side injected, f = 200MHz, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
IF
IF
LO
C
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
5
0
5
f
= 200MHz
f
= 3200MHz
LO
IF
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
10
15
20
25
30
10
15
20
25
30
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs. TEMPERATURE (T )
C
0
5
150
145
140
135
130
125
120
V
= 5.25V
CC
V
CC
= 5.0V
P
= -3dBm
= +3dBm
LO
10
15
20
25
30
P
= 0dBm
LO
V
= 4.75V
CC
P
LO
2500
3000
3500
4000
-40
-15
10
35
60
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
______________________________________________________________________________________ 29
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 2, Upconverter Mode, V
= 3.3V, f = 3000MHz to 4000MHz,
RF
CC
LO is low-side injected, f = 200MHz, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
IF
IF
LO
C
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
CONVERSION LOSS vs. RF FREQUENCY
10
9
10
9
10
9
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= +85°C
T
C
= +25°C
8
8
8
P
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
LO
7
7
7
T
C
= -40°C
6
6
6
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
34
32
30
28
26
24
34
32
30
28
26
24
34
32
30
28
26
24
V
= 3.3V
V
= 3.3V
P
= 0dBm/TONE
IF
CC
CC
P
IF
= 0dBm/TONE
P = 0dBm/TONE
IF
V
= 3.6V
CC
T
C
= -40°C
T
C
= +25°C
T
C
= +85°C
V
CC
= 3.0V
P
= -3dBm, 0dBm, +3dBm
LO
V
= 3.3V
CC
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO - 2IF RESPONSE vs. RF FREQUENCY
LO - 2IF RESPONSE vs. RF FREQUENCY
LO - 2IF RESPONSE vs. RF FREQUENCY
85
75
65
55
45
85
75
65
55
45
85
75
65
55
45
V
= 3.3V
= 0dBm
V
= 3.3V
= 0dBm
P = 0dBm
IF
CC
CC
P
IF
P
IF
T
= +85°C
C
P
= +3dBm
LO
V
V
= 3.6V
CC
CC
T
= +25°C
3800
C
P
= -3dBm
LO
V
= 3.3V
CC
P
= 0dBm
LO
= 3.0V
T
C
= -40°C
3000
3200
3400
3600
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
30 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 2, Upconverter Mode, V
= 3.3V, f = 3000MHz to 4000MHz,
RF
CC
LO is low-side injected, f = 200MHz, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
IF
IF
LO
C
LO + 2IF RESPONSE vs. RF FREQUENCY
LO + 2IF RESPONSE vs. RF FREQUENCY
LO + 2IF RESPONSE vs. RF FREQUENCY
85
75
65
55
45
85
75
65
55
45
85
75
65
55
45
V
P
= 3.3V
= 0dBm
V
P
= 3.3V
= 0dBm
P = 0dBm
IF
CC
CC
IF
IF
P
P
= +3dBm
T
= +85°C
LO
LO
C
V
V
= 3.6V
= 3.0V
CC
CC
P
= 0dBm
T
= +25°C
3800
LO
C
V
= 3.3V
CC
= -3dBm
T
C
= -40°C
3000
3200
3400
3600
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO - 3IF RESPONSE vs. RF FREQUENCY
LO - 3IF RESPONSE vs. RF FREQUENCY
LO - 3IF RESPONSE vs. RF FREQUENCY
80
70
60
50
80
70
60
50
80
70
60
50
V
= 3.3V
V
CC
= 3.3V
P = 0dBm
IF
CC
P
IF
= 0dBm
P = 0dBm
IF
V
= 3.6V
CC
T
C
= +25°C
P
= -3dBm, 0dBm, +3dBm
LO
T
= +85°C
C
V
= 3.0V
CC
V
= 3.3V
3200
CC
T
C
= -40°C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO + 3IF RESPONSE vs. RF FREQUENCY
LO + 3IF RESPONSE vs. RF FREQUENCY
LO + 3IF RESPONSE vs. RF FREQUENCY
90
80
70
60
50
90
80
70
60
50
90
80
70
60
50
V
CC
= 3.3V
V
= 3.3V
P = 0dBm
IF
CC
P
IF
= 0dBm
P
IF
= 0dBm
V
= 3.6V
CC
T
= +25°C
C
V
= 3.3V
CC
T
C
= +85°C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 3.0V
CC
T
C
= -40°C
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 31
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 2, Upconverter Mode, V
= 3.3V, f = 3000MHz to 4000MHz,
RF
CC
LO is low-side injected, f = 200MHz, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
IF
IF
LO
C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= +85°C
T
C
= -40°C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 3.0V, 3.3V, 3.6V
CC
T
C
= +25°C
2800
3000
3200
3400
3600
3800
2800
3000
3200
3400
3600
3800
2800
3000
3200
3400
3600
3800
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
IF LEAKAGE AT RF PORT
vs. LO FREQUENCY
IF LEAKAGE AT RF PORT
vs. LO FREQUENCY
IF LEAKAGE AT RF PORT
vs. LO FREQUENCY
-60
-70
-60
-70
-60
-70
V
= 3.3V
V
= 3.3V
CC
CC
V
= 3.0V
CC
T
C
= -40°C
P
LO
= 0dBm
P
= -3dBm
LO
-80
-80
-80
V
= 3.3V
-90
-90
-90
CC
P
= +3dBm
LO
V
= 3.6V
CC
T
= +25°C
T
= +85°C
3600
C
C
-100
-100
-100
2800
3000
3200
3400
3800
2800
3000
3200
3400
3600
3800
2800
3000
3200
3400
3600
3800
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
32 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 2, Upconverter Mode, V
= 3.3V, f = 3000MHz to 4000MHz,
RF
CC
LO is low-side injected, f = 200MHz, P = 0dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
IF
IF
LO
C
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
5
0
5
V
= 3.3V
f
= 3200MHz
LO
CC
f
= 200MHz
IF
V
= 3.0V, 3.3V, 3.6V
CC
10
15
20
25
30
10
15
20
25
30
P
= -3dBm, 0dBm, +3dBm
LO
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
SUPPLY CURRENT
vs. TEMPERATURE (T )
LO PORT RETURN LOSS
vs. LO FREQUENCY
C
135
130
125
120
115
110
105
0
5
V
= 3.3V
CC
V
= 3.6V
CC
V
CC
= 3.3V
10
15
20
25
30
P
= -3dBm
LO
V
= 3.0V
CC
P
= +3dBm
P
= 0dBm
LO
LO
-40
-15
10
35
60
85
2500
3000
3500
4000
TEMPERATURE (°C)
LO FREQUENCY (MHz)
______________________________________________________________________________________ 33
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Pin Configuration/Functional Diagram
TOP VIEW
20
19
18
17
16
V
1
2
3
4
5
GND
15
14
13
CC
RF
MAX2044
V
CC
GND
GND
GND
GND
12 GND
11 LO
EP*
6
7
8
9
10
*EXPOSED PAD
Pin Description
PIN
NAME
FUNCTION
1, 6, 8, 14
V
CC
Power Supply. Bypass to GND with 0.01FF capacitors as close as possible to the pin.
Single-Ended 50IRF Input/Output. Internally matched and DC shorted to GND through a balun.
Provide an input DC-blocking capacitor if required.
2
RF
3, 9, 13, 15
GND
GND
Ground. Not internally connected. Pins can be grounded.
4, 5, 10,
12, 17
Ground. Internally connected to the exposed pad (EP). Connect all ground pins and the exposed
pad together.
LO Output Bias Resistor for LO Buffer. Connect a 698I1% resistor (138mA bias condition) from
LOBIAS to ground.
7
LOBIAS
Local Oscillator Input. This input is internally matched to 50I. Requires an input DC-blocking
capacitor.
11
LO
16, 20
18, 19
GND
Ground. Connect pins to ground.
Mixer Differential IF Output/Input. Provide DC-blocking capacitors if required. These ports are
internally biased to V /2.
CC
IF-, IF+
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses
multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These
multiple via grounds are also required to achieve the noted RF performance.
—
EP
34 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
capacitor. A two-stage internal LO buffer allows for a
Detailed Description
-3dBm to +3dBm LO input power range. The on-chip
The MAX2044 is a high-linearity passive mixer targeting
low-loss balun, along with an LO buffer, drives the
2.5GHz and 3.5GHz wireless infrastructure applications.
double-balanced mixer. All interfacing and matching
With an ultra-wide 2600MHz to 4300MHz LO frequency
components from the LO inputs to the IF outputs are
range, the MAX2044 can be used in either low-side or
integrated on-chip.
high-side LO injection architectures for virtually all WiMAX,
High-Linearity Mixer
The core of the MAX2044 is a double-balanced, high-
performance passive mixer. Exceptional linearity is pro-
vided by the large LO swing from the on-chip LO buffer.
IIP3, 2RF - 2LO rejection, and noise figure performance
are typically +32.5dBm, 68dBc, and 8.5dB, respectively.
LTE, and MMDS receive and transmit applications.
When used as a low-side LO injection downconverting
mixer in the 3000MHz to 4000MHz band, the MAX2044
provides +32.5dBm of input IP3, with typical conversion
loss and noise figure values of only 7.7dB and 8.5dB,
respectively. The integrated baluns and matching cir-
cuitry allow for 50I single-ended interfaces to the RF
and the LO port. The integrated LO buffer provides
a high drive level to the mixer core, reducing the LO
drive required at the MAX2044’s input to a -3dBm to
+3dBm range. The IF port incorporates a differential
output, which is ideal for providing enhanced 2RF - 2LO
or 2LO - 2RF performance.
Differential IF Output
The MAX2044 has a 50MHz to 500MHz IF frequency
range, where the low-end frequency depends on the
frequency response of the external IF components.
The MAX2044’s differential ports are ideal for provid-
ing enhanced 2RF - 2LO and 2LO - 2RF performance.
Single-ended IF applications require a 1:1 (impedance
ratio) balun to transform the 50I differential IF imped-
ance to a 50I single-ended system. An MABAES0029
1:1 transformer is used to characterize the part and its
loss is included in the data presented in this data sheet.
The user can connect a differential IF amplifier or SAW
filter to the mixer IF port, but a DC block is required on
both IF+/IF- ports to keep external DC from entering the
IF ports of the mixer. Capacitors C4 and C7 are required
DC blocks since the IF+ and IF- terminals are internally
Specifications are guaranteed over broad frequency ranges
to allow for use in WiMAX, LTE, and MMDS base stations.
The MAX2044 is specified to operate over a 2300MHz
to 4000MHz RF input range, a 2600MHz to 4300MHz
LO range, and a 50MHz to 500MHz IF range. Operation
beyond these ranges is possible (see the Typical Operating
Characteristics for additional information).
RF Input and Balun
The MAX2044 RF input provides a 50I match when
combined with a series DC-blocking capacitor. This
DC-blocking capacitor is required as the input is inter-
nally DC shorted to ground through the on-chip balun.
When using an 8.2pF DC-blocking capacitor, the RF
port input return loss is typically better than 13dB over
the 3300MHz to 3900MHz RF frequency range. A return
loss of 15dB over the 2400MHz to 2700MHz range is
achievable by changing the input matching components
per Tables 1 and 2. Other combinations of C1 and C12
can be used to optimize RF return loss in the 2300MHz
to 4000MHz band.
biased to V /2.
CC
Applications Information
Input and Output Matching
The RF input provides a 50Imatch when combined with
a series DC-blocking capacitor. Use an 8.2pF capaci-
tor value for RF frequencies ranging from 3000MHz to
4000MHz. See Tables 1 and 2 for alternative compo-
nents that provide an excellent match over the 2300MHz
to 3000MHz band. The LO input is internally matched to
50I; use a 2pF DC-blocking capacitor to cover opera-
tions spanning the 2600MHz to 4300MHz range. The
IF output impedance is 50I (differential). For evalua-
tion, an external low-loss 1:1 (impedance ratio) balun
transforms this impedance down to a 50I single-ended
output (see the Typical Application Circuit).
LO Inputs, Buffer, and Balun
With a broadband LO drive circuit spanning 2600MHz to
4300MHz, the MAX2044 can be used in either low-side
or high-side LO injection architectures for virtually all
2.5GHz and 3.5GHz applications. The LO input is inter-
nally matched to 50I, requiring only a 2pF DC-blocking
______________________________________________________________________________________ 35
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Reduced-Power Mode
The MAX2044 has one pin (LOBIAS) that allows an
external resistor to set the internal bias current. Nominal
values for this resistor are shown in Tables 1 and 2.
Larger value resistors can be used to reduce power
dissipation at the expense of some performance loss. If
Q1% resistors are not readily available, substitute with
Q5% resistors.
Layout Considerations
A properly designed PCB is an essential part of any RF/
microwave circuit. Keep RF signal lines as short as pos-
sible to reduce losses, radiation, and inductance. The
load impedance presented to the mixer must be such
that any capacitance from both IF- and IF+ to ground
does not exceed several picofarads. For the best per-
formance, route the ground pin traces directly to the
exposed pad under the package. The PCB exposed pad
MUST be connected to the ground plane of the PCB. It is
suggested that multiple vias be used to connect this pad
to the lower level ground planes. This method provides a
good RF/thermal-conduction path for the device. Solder
the exposed pad on the bottom of the device package
to the PCB.
Significant reductions in power consumption can also
be realized by operating the mixer at a supply voltage
of 3.3V. Doing so reduces the overall power consump-
tion by typically 42%. See the 3.3V Supply AC Electrical
Characteristics table and the relevant 3.3V curves in the
Typical Operating Characteristics section to evaluate the
power vs. performance trade-offs.
Power-Supply Bypassing
Proper voltage supply bypassing is essential for high-
frequency circuit stability. Bypass each V
pin with the
CC
capacitors shown in the Typical Application Circuit and
see Table 1.
Table 1. Downconverter Mode Component Values
DESIGNATION
QTY
DESCRIPTION
COMPONENT SUPPLIER
Coilcraft, Inc.
3.3nH microwave inductor (0402). Use for RF
frequencies ranging from 2300MHz to 3000MHz.
C1
1
8.2pF microwave capacitor (0402). Use for RF
frequencies ranging from 3000MHz to 4000MHz.
Murata Electronics North America, Inc.
C2, C6, C8, C11
C3, C9
C4, C7
C5
4
0
2
0
1
0.01FF microwave capacitors (0402)
Not installed, microwave capacitors (0402)
470pF microwave capacitors (0402)
Not installed, microwave capacitor (0402)
2pF microwave capacitor (0402)
Murata Electronics North America, Inc.
—
Murata Electronics North America, Inc.
—
C10
Murata Electronics North America, Inc.
0.3pF microwave capacitor (0402). Use for RF
frequencies ranging from 2300MHz to 3000MHz.
1
0
Murata Electronics North America, Inc.
C12
R1
Microwave capacitor (0402) not installed for RF
frequencies ranging from 3000MHz to 4000MHz.
—
698I±1% resistor (0402). Use for V
applications.
= +5.0V
CC
Digi-Key Corp.
Digi-Key Corp.
1
698I±1% resistor (0402). Use for V
= +3.3V
CC
applications.
T1
1
1
1:1 IF balun MABAES0029
MAX2044 IC (20 TQFN)
M/A-Com
U1
Maxim Integrated Products, Inc.
36 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
the EP. In addition, provide the EP with a low-inductance
path to electrical ground. The EP MUST be soldered to
a ground plane on the PCB, either directly or through an
array of plated via holes.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX2044’s 20-pin thin
QFN package provides a low thermal-resistance path
to the die. It is important that the PCB on which the
MAX2044 is mounted be designed to conduct heat from
Table 2. Upconverter Mode Component Values
DESIGNATION
QTY
DESCRIPTION
COMPONENT SUPPLIER
3.3nH microwave inductor (0402). Use for RF
frequencies ranging from 2300MHz to 3000MHz.
Coilcraft, Inc.
C1
1
8.2pF microwave capacitor (0402). Use for RF
Murata Electronics North America, Inc.
frequencies ranging from 3000MHz to 4000MHz.
C2, C6, C8, C11
C3, C9
C4, C7
C5
4
0
2
0
1
0.01FF microwave capacitors (0402)
Not installed, microwave capacitors (0402)
470pF microwave capacitors (0402)
Not installed, microwave capacitor (0402)
2pF microwave capacitor (0402)
Murata Electronics North America, Inc.
—
Murata Electronics North America, Inc.
—
C10
Murata Electronics North America, Inc.
0.3pF microwave capacitor (0402). Use for RF
frequencies ranging from 2300MHz to 3000MHz.
1
0
Murata Electronics North America, Inc.
C12
R1
Microwave capacitor (0402) not installed for RF
frequencies ranging from 3000MHz to 4000MHz.
—
698I±1% resistor (0402). Use for V
applications.
= +5.0V
CC
Digi-Key Corp.
Digi-Key Corp.
1
698I±1% resistor (0402). Use for V
= +3.3V
CC
applications.
T1
1
1
1:1 IF balun MABAES0029
MAX2044 IC (20 TQFN)
M/A-Com
U1
Maxim Integrated Products, Inc.
______________________________________________________________________________________ 37
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Typical Application Circuit
3
2
5
N.C.
T1
IF
1
C7
4
1:1
C4
C5
V
CC
20
19
18
17
16
C3
C2
V
CC
RF
GND
15
14
13
12
11
1
2
3
4
5
U1
C1
MAX2044
V
CC
RF
C11
C12*
GND
GND
GND
GND
GND
LO
EP
C10
LO
INPUT
6
7
8
9
10
V
CC
R1
C6
NOTE: PINS 4, 5, 10, 12, AND 17 ARE ALL INTERNALLY
CONNECTED TO THE EXPOSED GROUND PAD. CONNECT
THESE PINS TO GROUND TO IMPROVE ISOLATION.
C8
C9
V
CC
PINS 3, 9, 13, AND 15 HAVE NO INTERNAL CONNECTION, BUT CAN BE
EXTERNALLY GROUNDED TO IMPROVE ISOLATION.
*C12 NOT USED FOR 3000MHz TO 4000MHz APPLICATIONS.
38 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Upconversion/Downconversion Mixer with LO Buffer
Chip Information
Package Information
PROCESS: SiGe BiCMOS
For the latest package outline information and land pat-
terns, go to www.maxim-ic.com/packages. Note that
a “+”, “#”, or “-” in the package code indicates RoHS
status only. Package drawings may show a different suf-
fix character, but the drawing pertains to the package
regardless of RoHS status.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
20 TQFN-EP
T2055+3
21-0140
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
39
©
2009 Maxim Integrated Products
Maxim is a registered trademark of Maxim Integrated Products, Inc.
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