MAX2307EBC-T [MAXIM]
RF and Baseband Circuit, Bipolar, PBGA12, ULTRA SMALL, UCSP-12;
| 型号： | MAX2307EBC-T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | RF and Baseband Circuit, Bipolar, PBGA12, ULTRA SMALL, UCSP-12 电信 电信集成电路 |
| 文件： | 总8页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-1897 Rev 0; 1/01
Low-Power Cellular Upconverter-Driver
General Description
Features
The MAX2307 is an integrated RF upconverter-driver
optimized for the Japanese cellular frequency band. It
can also be used for applications in the US cellular and
ISM bands. Its low current consumption (15mA at
-15dBm output) extends the average talk time.
ꢀ Ultra-Small Implementation Size
ꢀ Low Off-Chip Component Count
ꢀ 15mA at -15dBm P
OUT
ꢀ 34mA at +6.5dBm P
and -53dBc ACPR
OUT
The image rejection is done using only two external
inductors at the upconverter output because the image
frequency in Japanese cellular phones is typically
330MHz away. This realizes the image rejection with no
current consumption penalty and only two inexpensive
off-chip components, saving cost and valuable board
space.
ꢀ <1µA Shutdown Mode
ꢀ Separate Shutdown for LO Buffer
ꢀ No External Logic Interface Circuitry Required
The MAX2307 has a separate shutdown control for the
LO buffer to minimize VCO pulling. It comes in an ultra-
✕
small 3 4 ultra-chipscale package (UCSP).
Ordering Information
Applications
Cellular Handsets
cdmaOne™ Handsets
ISM Band
PART
TEMP. RANGE
PIN-PACKAGE
×
3 4 UCSP
MAX2307EBC
-40°C to +85°C
Pin Configuration
Block Diagram
V
CC
TOP VIEW (BUMPS ON BOTTOM)
V
CC
VCC
MIXP
VCC
VCC
GND
A
B
MIXM
VCCMIXP A2 A3 VCCMIXM
IFINM
C3
B4
LOIN/
SHDNLO
C2
IFINP
GC
RFOUT
RFOUT
B3
GC
GND
1
IFINM
3
SHDN
4
IFINP
2
C
BIAS
CTRL
C4
SHDN
BIAS
CTRL2
B1 LOIN/SHDNLO
SHDNLO
LOIN
cdmaOne is a trademark of CDMA Development Group.
________________________________________________________________ Maxim Integrated Products
1
For price, delivery, and to place orders, please contact Maxim Distribution at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Low-Power Cellular Upconverter-Driver
ABSOLUTE MAXIMUM RATINGS
CC
SHDN to GND.............................................-0.3V to (V
RF, IF Input Power ..............................................................0dBm
V
, RFOUT to GND .............................................-0.3V to +5.5V
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +160°C
+ 0.3V)
CC
Continuous Power Dissipation (T = +70°C)
A
✕
3 4 UCSP (derate 80mW/°C above +70°C) .................628mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(V
= +2.8V to +4.2V, T = -40°C to +85°C, no RF/IF signals applied, V
= V
= +1.8V. Typical values are at V
=
A
CC
SHDN
SHDNLO
CC
+3.0V, T = +25°C, unless otherwise noted).
A
PARAMETER
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
MAX
4.2
20
UNITS
V
V
2.8
CC
CC
CC
Shutdown Supply Current
Standby Supply Current
I
I
SHDN = SHDNLO = 0.6V
SHDN = 0.6V, SHDNLO = 1.8V
0.1
2.5
33.5
29.5
14
µA
4
mA
V
V
V
V
= 2.2V, P
= 2.2V, P
= 0.5V
= +6.5dBm
= +2dBm
42
GC
GC
GC
GC
OUT
OUT
Supply Current (Note 1)
I
mA
38
CC
20
Supply Current with No RF Drive
Gain Control Voltage
I
= 2.2V
28
36.5
3.0
mA
V
CC
V
0
1.8
0
GC
SHDN, SHDNLO Logic High
SHDN, SHDNLO Logic Low
V
0.6
1
V
SHDN, SHDNLO Logic Current
High
µA
µA
SHDN, SHDNLO Logic Current
Low
1
2
_______________________________________________________________________________________
Low-Power Cellular Upconverter-Driver
AC ELECTRICAL CHARACTERISTICS
(MAX2307 Evaluation Kit, V
= +2.8V to +4.2V, T = -40°C to +85°C, f = 887MHz to 925MHz, f
= 722MHz to 760MHz, f
=
=
A
CC
RF
LO
IF
165MHz, P
= -20dBm, P
= -15dBm, V
= V
= +1.8V, 50Ω system. Typical values are at V
= 3.0V, V
IFIN
LOIN
SHDN
SHDNLO
CC
SHDN
V
= 1.8V, f = 906MHz, T = +25°C, unless otherwise noted.) (Note 1)
SHDNLO
RF A
PARAMETER
SYMBOL
CONDITIONS
MIN
887
TYP
MAX
925
UNITS
RF Frequency Range (Note 2)
MHz
V
V
= 2.2V, V
= 2.2V, V
= 3.0V, T = +25°C
21.5
24.5
24.5
27.5
GC
GC
CC
CC
A
Power Gain
G
dB
= 2.8V to 4.2V, T = T
to
A
MIN
17
32.5
T
MAX
Output Power
P
V
= 2.2V, ACPR ≤ -53dBc, ALT ≤ -65dBc
4.5
-15
18
6.5
-12
23
dBm
dBm
dB
OUT
GC
LO Input Power Level
-5
Gain Control Range
V
V
= 0.5V to 2.2V, P
= 0.5V to 2.2V, P
= -30dBm
= -30dBm
GC
GC
IFIN
Gain Control Slope (Note 3)
Adjacent Channel Power Ratio
Alternate Channel Power Ratio
32
36
-53
dB/V
dBc
dBc
IFIN
ACPR1
ACPR2
Offset = 885kHz in 30kHz BW
Offset = 1.98MHz in 30kHz BW
-65
P
P
P
= 6.5dBm
-134
-147
-43
-131
OUT
IFIN
OUT
RX Band Noise Power
(Note 4)
P
dBm/Hz
dBc
NOISE
= -50dBm, V
= 0.5V
GC
LO Leakage
from +6.5dBm to -8dBm
-30
-25
P
from 6.5dBm to -8dBm, f = 887MHz to
OUT
RF
Image Leakage (Note 1)
-40
dBc
925MHz, f
= 557MHz to 595MHz
IMAGE
Note 1: Minimum and maximum limits are guaranteed by design and characterization.
Note 2: See Typical Operating Characteristics for operation outside this frequency range.
Note 3: Slope measured with V
= +0.5V and V
= +0.8V.
GC
GC
Note 4: f = 925MHz, noise measured at 870MHz.
RF
_______________________________________________________________________________________
3
Low-Power Cellular Upconverter-Driver
Typical Operating Characteristics
(MAX2307 Evaluation Kit, V
= +2.8V, V
= 2.2V, V
= V
= V , f = 906MHz, f = 165MHz, f = 741MHz,
SHDNLO CC RF IF LO
CC
GC
SHDN
T
A
= +25°C, unless otherwise noted.)
SHUTDOWN SUPPLY CURRENT
vs. SUPPLY VOLTAGE
TOTAL SUPPLY CURRENT vs.
OUTPUT POWER
TOTAL SUPPLY CURRENT vs.
GAIN CONTROL VOLTAGE
34
31
28
25
22
19
16
13
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
V
GC
= 2.2V
NO RF SIGNALS APPLIED
33
32
V
= 0
GC
T
T
= +85°C
= +25°C
A
T
= +85°C
= +25°C
A
T
= +85°C
= +25°C
31
30
29
28
27
26
25
24
A
A
T
A
T
A
T
A
= -40°C
T
A
= -40°C
T
A
= -40°C
NO RF SIGNALS APPLIED
2
3
4
5
6
-10 -8 -6
-4 -2
0
2
4
6
0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
V
CC
(V)
P
OUT
(dBm)
V
GC
CONVERSION GAIN vs.
GAIN CONTROL VOLTAGE
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
40
30
27
35
30
25
20
15
10
T
A
= -40°C
26
25
T
A
= +25°C
T
T
= -40°C
= +25°C
A
V
CC
= +4.2V
A
20
24
23
22
21
20
19
18
17
10
T
A
= +85°C
V
CC
= +2.8V
0
V
CC
= +3.3V
-10
-20
-30
T
A
= +85°C
P
= -30dBm
2.5 3.0
P
= -30dBm
940
P
IFIN
= -30dBm
IFIN
IFIN
0
0.5
1.0
1.5
(V)
2.0
840
860
880
900
920
960
840
860
880
900
920
940
960
V
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
GC
CONVERSION GAIN vs.
LO INPUT POWER
OUTPUT POWER vs. RF FREQUENCY
7.1
7.0
6.9
6.8
ACPR ≤ -53dBc
ALT1 ≤ -65dBc
33
30
27
24
T
= -40°C
A
T
A
T
A
= +25°C
= +85°C
6.7
6.6
21
6.5
6.4
18
15
P
= -30dBm
-7 -5
IFIN
885
895
905
915
925
-17
-15
-13
-11
(dBm)
-9
RF FREQUENCY (MHz)
P
LOIN
4
_______________________________________________________________________________________
Low-Power Cellular Upconverter-Driver
Typical Operating Characteristics (continued)
(MAX2307 Evaluation Kit, V
= +2.8V, V
= 2.2V, V
= V
= V , f = 906MHz, f = 165MHz, f = 741MHz,
CC
GC
SHDN
SHDNLO
CC RF
IF
LO
T
A
= +25°C, unless otherwise noted.)
RX BAND NOISE POWER
vs. RF FREQUENCY
RX BAND NOISE POWER vs.
OUTPUT POWER
ACPR AND ALT vs. OUTPUT POWER
-133.5
-134.0
-134.5
-135.0
-135.5
-136.0
-136.5
-137.0
-130
-135
-140
-145
-150
-155
-20
-30
-40
-50
-60
-70
-80
-90
-100
ALT1:
A
ACPR:
A
D. T = +85°C
A. T = +85°C
E. T = +25°C
B. T = +25°C
A
A
F. T = -40°C
T = -40°C
A
C. T = -40°C
A
A
B
C
T
A
= +85°C
T
= +85°C
A
A
T
A
= +25°C
F
T
A
= -40°C
E
D
VARYING P
,
T
A
= +25°C
IFIN
= +2.2V
V
GC
880
890
900
f
910
(MHz)
920
930
-8
-5
-2
P
1
4
7
-50
-40
-30
-20
P (dBm)
OUT
-10
0
10
(dBm)
RF
OUT
LO LEAKAGE vs. OUTPUT POWER
LO LEAKAGE vs. OUTPUT POWER
LO LEAKAGE vs. OUTPUT POWER
-10
-20
-30
-40
-50
-60
-70
-80
-10
-20
-30
-40
-50
-60
-70
-80
-10
-20
-30
-40
-50
-60
-70
-80
T
= +25°C
T = +85°C
A
A
A = P
B = P
C = P
= -17dBm
= -11dBm
= -5dBm
A = P
B = P
C = P
= -17dBm
= -11dBm
= -5dBm
LOIN
LOIN
LOIN
LOIN
LOIN
LOIN
f
RF
= 906MHz
C
B
C
B
f
= 925MHz
RF
A
A
f
RF
= 887MHz
-10
-4.5
1.0
6.5
-10
-4.5
1.0
6.5
-10
-4.5
1.0
6.5
P
OUT
(dBm)
P
OUT
(dBm)
P
OUT
(dBm)
IMAGE LEAKAGE vs. RF FREQUENCY
LO LEAKAGE vs. OUTPUT POWER
-40
-41
-42
-43
-44
-45
-46
-47
-48
-49
-50
-10
T
= -40°C
A
T
A
= +85°C
A = P
B = P
C = P
= -17dBm
= -11dBm
= -5dBm
LOIN
LOIN
LOIN
-20
-30
-40
-50
-60
-70
-80
C
B
A
T
A
= +25°C
T
A
= -40°C
885
895
905
915
925
-10
-4.5
1.0
6.5
RF FREQUENCY (MHz)
P
OUT
(dBm)
_______________________________________________________________________________________
5
Low-Power Cellular Upconverter-Driver
Typical Operating Characteristics (continued)
(MAX2307 Evaluation Kit, V
= +2.8V, V
= 2.2V, V
= V
= V , f = 906MHz, f = 165MHz, f = 741MHz,
SHDNLO CC RF IF LO
CC
GC
SHDN
T
A
= +25°C, unless otherwise noted.)
S
OF LO INPUT
MAXIMUM OUTPUT POWER
MAXIMUM INPUT POWER
11
MAX2307 toc20
MAX2307 toc19
45
-35
-40
-45
-50
-55
-60
20
-15.0
-15.5
-16.0
-16.5
-17.0
-17.5
-18.0
ACPR > -53dBc
ALT1 > -65dBc
ACPR > -53dBc
ALT1 > -65dBc
15
10
5
40
35
30
25
20
C, E, G
A
0
D, F
R
ACPR ≤ 53dBc
ALT1 ≤ -65dBc
ACPR ≤ -53dBc
ALT1 ≤ -65dBc
-5
H
-18.5
-19.0
-19.5
-20.0
-10
-15
-20
600 650 700 750 800 850 900 950 1000
0.5
1.0
1.5
2.0
(V)
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
f
LO
(MHz)
V
GC
V
GC
(V)
SHDN = SHDNLO = V
SHDN = V , SHDNLO = GND
CC
CC
A = REAL, B = IMAGINARY
SHDN = SHDNLO = GND
C = REAL, D = IMAGINARY
E = REAL, F = IMAGINARY
SHDN = GND, SHDNLO = V
G = REAL, H = IMAGINARY
CC
Pin Description
PIN
A1
NAME
FUNCTION
VCC
Supply Pin. Bypass with 100pF and 0.01µF capacitors as close to the pin as possible.
VCCMIXP,
VCCMIXM
Mixer Supply Pins. Require pullup inductors, which are used as part of the image rejection filter
network. Supply to inductors should be locally bypassed with 100pF and 0.01µF capacitors.
A2, A3
LO Input and LO Buffer Shutdown. Apply both LO input signal and LO buffer shutdown control
to this pin. The LO path requires a DC-blocking capacitor. A logic high on SHDNLO turns
on the LO buffer, and a logic low turns off the LO buffer, independently of SHDN. The shutdown
control requires a 10kΩ isolation resistor in order not to load the LO signal.
LOIN/
SHDNLO
B1
B3
B4
GC
Gain Control Pin. Apply a voltage between 0 to 3V to vary the gain of the IC.
PA Driver Output. Requires an inductor pullup and a DC-blocking capacitor. These components
are also the matching elements.
RFOUT
GND Connection. Solder directly to the PCB ground plane, with three ground vias around the
corner of the UCSP, as close to bump as possible. It is imperative that GND sees a low inductance
to the system ground plane. See the MAX2307 EV Kit as an example.
A4, C1
GND
IFINP,
IFINM
C2, C3
C4
Upconverter IF Inputs. AC-couple IF signals to these pins.
Shutdown Control. HIGH turns on the device except the LO buffer, LOW turns off the device
except the LO buffer.
SHDN
6
_______________________________________________________________________________________
Low-Power Cellular Upconverter-Driver
using on-chip inductors to ensure sufficient selectivity
Typical Operating Circuit
for image rejection. The Q of the off-chip tank inductor
V
CC
directly determines the image suppression level and
usable bandwidth.
C6
C7
The MAX2307 also provides a continuous variable gain
function, enabling at least 20dB of gain control using
an external control voltage input.
L1
L2
100pF
0.01µF
5.6nH
5.6nH
V
GC
R2
V
CC
V
CC
10kΩ
VCCMIXM
VCCMIXP
PA Driver
The MAX2307 utilizes a class AB driver stage. Unlike
class A or B, class AB action offers both good linearity
and low current consumption. Current consumption of
class AB is proportional to the output power at high
drive levels.
V
CC
GC
C3
4.7µF
C2
C1
C13
100pF
C14
C12
0.01µF
0.01µF
100pF
0.01µF
L4
6.2nH
MAX2307
GND
V
CC
R1
10kΩ
RFOUT
RFOUT
SHDNLO
LOIN/SHDNLO
C4
100pF
C16
3.0pF
V
CC
RFOUT is an open-collector output that requires an
external inductor to V
for proper biasing. For opti-
CC
LOIN
SHDN
IFINM
SHDN
GND
mum performance, implement an impedance-matching
network. The configuration and values for the matching
network depend on the transmit frequency, perfor-
mance, and desired output impedance. For simultane-
ous optimum linearity and return loss, the real part of
the load impedance should be about 100Ω. The
device’s internal 0.5pF shunt parasitic needs to be
absorbed by the matching network. For matching net-
work values for the Japanese cellular transmit band,
see the MAX2307 EV kit data sheet.
IFINP
IF INPUT
Applications Information
Local Oscillator LOIN/SHDNLO Input
The LO input is a single-ended broadband port. The
LO signal is mixed with the input IF signal and the
resulting upconverted output appears on the RFOUT
pin. AC-couple the LO pin with a capacitor having less
than 3Ω reactance at the LO frequency. This device
also contains an internal LO buffer and supports an LO
signal ranging from -15dBm to -5dBm.
Layout Issues
For best performance, pay close attention to power-
supply issues, as well as to the layout of the RFOUT
matching network. The EV kit can be used as a layout
example. Ground connections and supply bypassing
are the most important.
SHDNLO turns the LO buffer on and off independent of
the rest of the IC and shares the same pin as LOIN. To
avoid loading of the LO, connect a 10kΩ isolation resis-
tor between the LOIN/SHDNLO pin and the SHDNLO
logic output. The SHDNLO control can help reduce
VCO pulling in gated-transmission mode by providing a
means to keep the LO buffer on while the upconverter
and driver turn on and off.
Power Supply and SHDN_ Bypassing
Bypass V
with a 100pF capacitor in parallel with a
CC
0.01µF RF capacitor. Use separate vias to the ground
plane for each of the bypass capacitors and minimize
trace length to reduce inductance. Use three separate
vias to the ground plane for each ground pin.
IF Input
The MAX2307 has a differential IF input port for inter-
facing to differential IF filters. AC-couple the IF pins
with a capacitor. The typical IF input frequency is
165MHz, but device can operate from 130MHz to
230MHz. The differential impedance between the two
IF inputs is approximately 400Ω in parallel with 0.5pF.
Power-Supply Layout
To minimize coupling between different sections of the
IC, the ideal power-supply layout is a star configuration
with a large decoupling capacitor at a central V
CC
node. The V
traces branch out from this central
CC
node, each going to a separate V
node in the PC
CC
board. At the end of each trace is a bypass capacitor
with low ESR at the RF frequency of operation. This
Mixer
The MAX2307 uses a double-balanced differential
upconverting mixer. Two inductors connecting the
arrangement provides local decoupling at each V
CC
pin. At high frequencies, any signal leaking out of one
supply pin sees a relatively high impedance (formed by
mixer output pins (A2 and A3) to V
in conjunction
CC
with an on-chip capacitor achieve image suppression.
This method allows image rejection with no current con-
sumption penalty, and permits much higher Q than
the V
trace inductance) to the central V
node, and
CC
CC
an even higher impedance to any other supply pin, as
_______________________________________________________________________________________
7
Low-Power Cellular Upconverter-Driver
well as a low impedance to ground through the bypass
capacitor.
____________________Chip Information
TRANSISTOR COUNT: 693
Impedance-Matching Network Layout
PROCESS TECHNOLOGY: Silicon Bipolar
The RFOUT matching network is very sensitive to lay-
out-related parasitics. To minimize parasitic induc-
tance, keep all traces short and place components as
close as possible to the chip. To minimize parasitic
capacitance, minimize the area of the plane.
Package Information
8
_______________________________________________________________________________________
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