MAX399EEE+ [MAXIM]
Differential Multiplexer, 2 Func, 4 Channel, CMOS, PDSO16, QSOP-16;
| 型号： | MAX399EEE+ |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Differential Multiplexer, 2 Func, 4 Channel, CMOS, PDSO16, QSOP-16 复用器 |
| 文件： | 总12页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-0299; Rev. 2; 7/96
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX39
_______________Ge n e ra l De s c rip t io n
____________________________Fe a t u re s
The MAX398/MAX399 precision, monolithic, CMOS ana-
log multiplexers (muxes) offer low on-resistance (less
than 100Ω), which is matched to within 6Ω between
channels and remains flat over the specified analog sig-
nal range (11Ω max). They also offer low leakage over
temperature (NO-off leakage current less than 2.5nA at
+85°C) and fast switching speeds (transition time less
than 250ns). The MAX398 is an 8-channel device, and
the MAX399 is a dual 4-channel device.
♦ Pin Compatible with Industry-Standard
DG408/DG409/DG508A/DG509A
♦ Guaranteed On-Resistance Match
Between Channels (<6Ω )
♦ Low On-Resistance (<100Ω )
♦ Guaranteed Flat On-Resistance over Signal
Range (<11Ω)
♦ Guaranteed Low Charge Injection (<5pC)
♦ NO-Off Leakage Current <1nA at +85°C
♦ COM-Off Leakage Current <2.5nA at +85°C
♦ Electrostatic Discharge Protection >2000V
The MAX398/MAX399 are fabricated with Maxim’s low-
voltage silicon-gate process. Design improvements
yield extremely low charge injection (less than 5pC) and
guarantee electrostatic discharge protection greater than
2000V.
♦ Single-Supply Operation (+3V to +15V)
Bipolar-Supply Operation (±3V to ±8V)
These muxes operate with a single +3V to +15V supply or
bipolar ±3V to ±8V supplies, while retaining CMOS-logic
input compatibility and fast switching. CMOS inputs pro-
vide reduced input loading. The MAX398/MAX399 are
p in c omp a tib le with the ind us try-s ta nd a rd DG408,
DG409, DG508A, and DG509A.
♦ Low Power Consumption (<300µW)
♦ Rail-to-Rail Signal Handling
♦ TTL/CMOS-Logic Compatible
______________Ord e rin g In fo rm a t io n
________________________Ap p lic a t io n s
PART
TEMP. RANGE
0°C to +70°C
PIN-PACKAGE
16 Plastic DIP
16 Narrow SO
Dice*
Sample-and-Hold Circuits
Automatic Test Equipment
Heads-Up Displays
Guidance and Control Systems
Military Radios
Communications Systems
Battery-Operated Systems
PBX, PABX
MAX398CPE
MAX398CSE
MAX398C/D
MAX398EPE
MAX398ESE
MAX398EJE
MAX398MJE
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
16 Plastic DIP
16 Narrow SO
16 CERDIP**
16 CERDIP**
Ordering Information continued at end of data sheet.
* Contact factory for dice specifications.
Audio Signal Routing
** Contact factory for package availability.
Low-Voltage Data Acquisition Systems
__________________________________________________________P in Co n fig u ra t io n s
TOP VIEW
A0
EN
V-
A0
EN
A1
A1
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
9
A2
GND
V+
V-
GND
V+
N01
N01A
NO1B
NO2B
NO3B
NO4B
COMB
MAX398
MAX399
N02
N03
N02A
N03A
N04A
COMA
NO5
NO6
NO7
NO8
N04
COM
DIP/SO
DIP/SO
________________________________________________________________ Maxim Integrated Products
1
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to GND
Continuous Power Dissipation (T = +70°C)
A
V+ .......................................................................-0.3V to +17V
V- ........................................................................+0.3V to -17V
V+ to V-...............................................................-0.3V to +17V
Voltage into Any Terminal (Note 1).........(V- - 2V) to (V+ + 2V) or
30mA (whichever occurs first)
Current into Any Terminal ...................................................30mA
Peak Current, Any Terminal
(pulsed at 1ms, 10% duty cycle max) ............................40mA
Plastic DIP (derate 7.5mW/°C above +70°C) ..............470mW
Narrow SO (derate 8.7mW/°C above +70°C) ..............696mW
CERDIP (derate 10.0mW/°C above +70°C).................900mW
Operating Temperature Ranges
MAX39_C_ _ .......................................................0°C to +70°C
MAX39_E_ _.....................................................-40°C to +85°C
MAX39_MJE ..................................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10sec) .............................+300°C
Note 1: Signals on any terminal exceeding V+ or V- are clamped by internal diodes. Limit forward current to maximum current ratings.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
8/MAX39
ELECTRICAL CHARACTERISTICS—Dual Supplies
(V+ = +5V ±10%, V- = -5V ±10%, GND = 0V, V = V
= +2.4V, V = V
= +0.8V, T = T
A
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SWITCH
SYMBOL
CONDITIONS
UNITS
Analog Signal Range
V
, V
(Note 3)
V-
V+
100
125
6
V
COM NO
T
= +25°C
60
A
Channel On-Resistance
R
I
NO
= 1mA, V
COM
= ±3.5V
= ±3.5V,
Ω
ON
T
A
= T
to T
MIN
MAX
MAX
MAX
T
A
= +25°C
R
Matching Between
I
= 1mA, V
ON
NO COM
∆R
Ω
Ω
ON
Channels (Note 4)
V+ = 5V, V- = -5V
T
A
= T
to T
8
MIN
T
A
= +25°C
11
14
0.1
1.0
10
0.2
2.5
20
0.1
1.5
10
0.4
5
On-Resistance Flatness
(Note 5)
I
NO
= 1mA, V
= ±3V,
COM
R
FLAT(ON)
V+ = 5V, V- = -5V
T
A
= T
to T
MIN
T
A
= +25°C
-0.1
-1.0
-10
-0.2
-2.5
-20
-0.1
-1.5
-10
-0.4
-5
±
NO-Off Leakage Current
(Note 6)
V
NO
= ±4.5V, V
=
4.5V,
COM
I
C, E
M
nA
NO(OFF)
T
= T
MIN
MAX
A
V+ = 5.5V, V- = -5.5V
to T
T
A
= +25°C
V
V
NO
= ±4.5V,
±
COM
=
4.5V,
MAX398
MAX399
MAX398
MAX399
C, E
M
T
= T
MIN
MAX
A
V+ = 5.5V, V- = -5.5V
to T
COM-Off Leakage Current
(Note 6)
I
nA
COM(OFF)
T
A
= +25°C
V
COM
= ±4.5V,
±
V
NO
=
4.5V,
C, E
M
T
= T
MIN
MAX
A
V+ = 5.5V, V- = -5.5V
to T
T
A
= +25°C
C, E
M
T
= T
MIN
MAX
A
V
V
= ±4.5V,
= 4.5V,
NO
COM
to T
-40
-0.2
-2.5
-20
40
0.2
2.5
20
COM-On Leakage Current
(Note 6)
I
nA
COM(ON)
T
A
= +25°C
C, E
M
T
= T
MIN
MAX
A
to T
2
_______________________________________________________________________________________
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX39
ELECTRICAL CHARACTERISTICS—Dual Supplies (continued)
(V+ = +5V ±10%, V- = -5V ±10%, GND = 0V, V = V
= +2.4V, V = V
= +0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SYMBOL
CONDITIONS
UNITS
DIGITAL LOGIC INPUT
Logic High Input Voltage
Logic Low Input Voltage
V
, V
T
= T
= T
to T
to T
2.4
V
V
AH ENH
A
MIN
MAX
V
, V
AL ENL
T
A
0.8
0.1
MIN
MAX
Input Current with
Input Voltage High
I
, I
V
= V = 2.4V
-0.1
-0.1
µA
µA
AH ENH
A
EN
Input Current with
Input Voltage Low
I
, I
AL ENL
V
A
= V = 0.8V
0.1
EN
SUPPLY
Power-Supply Range
±3
-1
±8
1
V
V
= V = 0V/V+,
A
EN
Positive Supply Current
Negative Supply Current
Ground Current
I+
I-
T
= +25°C
µA
A
V+ = 5.5V, V- = -5.5V
V
= V = 0V/V+,
EN
A
T
A
= T
to T
-1
1
µA
µA
MIN
MAX
V+ = 5.5V, V- = -5.5V
T
A
= +25°C
-1
-1
1
1
V
= V = 0V/V+,
EN
A
I
GND
V+ = 5.5V, V- = -5.5V
T
A
= T
to T
MIN
MAX
DYNAMIC
Transition Time
t
Figure1
Figure 2
150
ns
ns
TRANS
Break-Before-Make Interval
t
T
= +25°C
= +25°C
0
40
60
OPEN
A
T
A
150
250
150
200
5
Enable Turn-On Time
Enable Turn-Off Time
t
Figure 3
Figure 3
ns
ns
ON(EN)
T
A
= T
to T
MIN
MAX
MAX
T
A
= +25°C
40
t
OFF(EN)
T
A
= T
to T
MIN
Charge Injection (Note 3)
Off Isolation (Note 7)
Q
C
= 10nF, V = 0V, R = 0Ω
T
= +25°C
T = +25°C
A
2
pC
dB
L
S
S
A
V
EN
= 0V, R = 1kΩ, f = 100kHz
-75
L
V
V
GEN
= 2.4V, f = 100kHz,
= 1V , R = 1kΩ
p-p L
EN
Crosstalk Between Channels
V
CT
T
A
= +25°C
-92
dB
Logic Input Capacitance
NO-Off Capacitance
C
f = 1MHz
T
= +25°C
T = +25°C
A
8
pF
pF
IN
A
C
f = 1MHz, V = V = 0V
11
40
20
54
34
NO(OFF)
EN
D
MAX398
MAX399
MAX398
MAX399
f = 1MHz,
= V = 0V
COM-Off Capacitance
COM-On Capacitance
C
T
A
= +25°C
= +25°C
pF
pF
COM(OFF)
V
EN
D
f = 1MHz,
= V = 0V
C
T
A
COM(ON)
V
EN
D
_______________________________________________________________________________________
3
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
ELECTRICAL CHARACTERISTICS—Single 5V
(V+ = 5V ±10%, V- = 0V, GND = 0V, V = V
= +2.4V, V = V
= +0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SWITCH
SYMBOL
CONDITIONS
UNITS
Analog Signal Range
V
, V
(Note 3)
= 1mA, V
V-
V+
225
280
11
V
COM NO
T
= +25°C
150
A
I
NO
= 3.5V,
COM
On-Resistance
R
Ω
ON
V+ = 4.5V
= 1mA, V = 3.5V,
COM
T
A
= T
to T
MIN
MAX
MAX
MAX
T
A
= +25°C
R
ON
Matching Between
I
NO
∆R
Ω
Ω
ON
Channels (Note 4)
V+ = 4.5V
T
A
= T
to T
13
MIN
T
A
= +25°C
10
15
18
I
NO
= 1mA; V = 3V, 2V, 1V;
COM
On-Resistance Flatness
R
FLAT
V+ = 5V
T
A
= T
to T
22
MIN
T
= +25°C
-0.1
-1.0
-10
-0.2
-2.5
-20
-0.2
-1.5
-10
-0.4
-5
0.1
1.0
10
A
NO-Off Leakage Current
(Note 8)
V
= 4.5V, V
= 0V,
COM
NO
8/MAX39
I
C, E
M
nA
NO(OFF)
T
= T
MIN
MAX
A
V+ = 5.5V
to T
T
A
= +25°C
0.2
2.5
20
V
= 4.5V,
= 0V,
COM
V
MAX398
C, E
M
NO
T
= T
MIN
MAX
A
V+ = 5.5V
to T
COM-Off Leakage Current
(Note 8)
I
nA
COM(OFF)
T
A
= +25°C
0.2
1.5
10
V
= 4.5V,
= 0V,
COM
V
MAX399
MAX398
MAX399
C, E
M
NO
T
= T
MIN
MAX
A
V+ = 5.5V
to T
T
A
= +25°C
0.4
5
C, E
M
T
= T
MIN
MAX
A
V
= 4.5V,
= 4.5V,
COM
to T
-40
-0.2
-2.5
-20
40
COM-On Leakage Current
(Note 8)
V
NO
V+ = 5.5V
I
nA
COM(ON)
T
A
= +25°C
0.2
2.5
20
C, E
M
T
= T
MIN
MAX
A
to T
DIGITAL LOGIC INPUT
Logic High Input Voltage
Logic Low Input Voltage
V
, V
T
= T
= T
to T
to T
2.4
V
V
AH ENH
A
MIN
MAX
V
, V
AL ENL
T
A
0.8
0.1
MIN
MAX
Input Current with
Input Voltage High
I
, I
V
= V = 2.4V
-0.1
-0.1
µA
µA
AH ENH
A
EN
Input Current with
Input Voltage Low
V = 0V
A
V
EN
I
, I
AL ENL
0.1
= 0.8V
SUPPLY
Power-Supply Range
Positive Supply Current
Negative Supply Current
3
15
1.0
1.0
1.0
1.0
V
I+
I-
V
= V = 0V, V+; V+ = 5.5V; V- = 0V
-1.0
-1.0
-1.0
-1.0
µA
µA
EN
A
V
EN
= V = 0V, V+; V+ = 5.5V; V- = 0V
A
T
A
= +25°C
V
= V+, 0V; V = 0V;
A
EN
I
I
µA
GND Supply Current
GND
V+ = 5.5V; V- = 0V
T
A
= T
to T
MIN MAX
4
_______________________________________________________________________________________
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX39
ELECTRICAL CHARACTERISTICS—Single 5V (continued)
(V+ = 5V ±10%, V- = 0V, GND = 0V, V = V
= +2.4V, V = V
= +0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
DYNAMIC
SYMBOL
CONDITIONS
UNITS
Transition Time
t
V
= 3V
NO
90
40
90
245
ns
ns
TRANS
Break-Before-Make Interval
t
T
= +25°C
10
OPEN
A
T
A
= +25°C
200
275
125
200
5
Enable Turn-On Time
t
ns
ON(EN)
T
A
= T
to T
MIN
MAX
MAX
T
A
= +25°C
50
Enable Turn-Off Time
t
ns
OFF(EN)
T
A
= T
to T
MIN
Charge Injection (Note 3)
Q
C
= 10nF, V = 0V, R = 0Ω
T = +25°C
A
1.5
pC
L
S
S
ELECTRICAL CHARACTERISTICS—Single 3V
(V+ = 3V ±10%, V- = 0V, GND = 0V, V = V
= +2.4V, V = V
= +0.8V, T = T
to T , unless otherwise noted.)
MAX
AH
ENH
AL
ENL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SWITCH
SYMBOL
CONDITIONS
UNITS
Analog Signal Range
V
(Note 3)
= 1mA, V
V-
V+
V
ANALOG
T
= +25°C
230
375
425
A
I
= 1.5V,
COM
NO
On-Resistance
R
Ω
ON
V+ = 3V
T
A
= T to T
MIN MAX
DYNAMIC
Figure 1, V = 2.4V,
IN
Transition Time (Note 3)
t
T
= +25°C
= +25°C
230
200
575
500
ns
ns
TRANS
A
V
N01
= 1.5V, V
= 0V
N08
Figure 3, V
= 2.4V,
INH
Enable Turn-On Time (Note 3)
t
T
A
ON(EN)
V
INL
= 0V, V
= 1.5V
N01
Figure 3, V
= 2.4V,
INH
Enable Turn-Off Time (Note 3)
Charge Injection (Note 3)
t
T
= +25°C
T = +25°C
A
75
1
400
5
ns
OFF(EN)
A
V
INL
= 0V, V
= 1.5V
N01
Q
C
= 10nF, V = 0V, R = 0Ω
pC
L
S
S
Note 2: The algebraic convention, where the most negative value is a minimum and the most positive value a maximum, is used in
this data sheet.
Note 3: Guaranteed by design.
Note 4: ∆R
= R MAX - R MIN.
ON ON
ON
Note 5: Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the
specified analog signal ranges, i.e., V = 3V to 0V and 0V to -3V.
NO
Note 6: Leakage parameters are 100% tested at maximum rated hot operating temperature, and guaranteed by correlation at +25°C.
Note 7: Worst-case isolation is on channel 4 because of its proximity to the COM pin. Off isolation = 20log V
/V , V
COM NO COM
= output,
V
NO
= input to off switch.
Note 8: Leakage testing at single supply is guaranteed by correlation testing with dual supplies.
_______________________________________________________________________________________
5
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
__________________________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s
(T = +25°C, unless otherwise noted.)
A
ON-RESISTANCE vs. V
COM
ON-RESISTANCE vs. V
COM
AND TEMPERATURE
(DUAL SUPPLIES)
ON-RESISTANCE vs. V
COM
(SINGLE SUPPLY)
(DUAL SUPPLIES)
300
275
110
110
V+ = 5V
V- = -5V
V- = 0V
100
90
100
90
250
225
V± = ±3V
T
= +125°C
= +85°C
A
80
70
80
70
200
175
150
125
T
A
V+ = 3V
60
50
60
50
T
A
= +25°C
= -55°C
V± = ±5V
100
75
V+ = 5V
T
A
40
30
40
30
8/MAX39
50
-5 -4 -3 -2 -1
0
1
2
3
4
5
-5 -4 -3 -2 -1
0
1
2
3
4
5
0
1
2
3
4
5
V
COM
(V)
V
COM
(V)
V
COM
(V)
ON-RESISTANCE vs. V
COM
AND TEMPERATURE
(SINGLE SUPPLY)
OFF-LEAKAGE vs.
TEMPERATURE
ON-LEAKAGE vs.
TEMPERATURE
1000
100
10,000
1000
100
180
160
V+ = 5.5V
V- = -5.5V
V+ = 5.5V
V- = -5.5V
V+ = 5V
V- = 0V
T
= +125°C
A
140
120
100
80
T
= +85°C
A
T
= +25°C
10
1
A
10
1
T
= -55°C
A
60
40
0.1
0.1
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
0
1
2
3
4
5
TEMPERATURE (°C)
TEMPERATURE (°C)
V
COM
(V)
SUPPLY CURRENT vs.
TEMPERATURE
CHARGE INJECTION vs. V
COM
5
0
10
V+ = 5V
V- = -5V
= V = 0V, 5V
V
EN
A
I+
I-
V+ = 5V
V- = 0V
1
V+ = 5V
V- = -5V
-5
0.1
-5 -4 -3 -2 -1
0
1
2
3
4
5
-50 -25
0
25 50
75 100 125
V
COM
(V)
TEMPERATURE (°C)
6
_______________________________________________________________________________________
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX39
______________________________________________________________P in De s c rip t io n
PIN
NAME
FUNCTION
MAX398
MAX399
—
1, 15, 16
A0, A2, A1
A0, A1
Address Inputs
Address Inputs
—
2
1, 16
2
EN
Enable Input, connect to V+ if not used
Negative Supply Voltage Input
Analog Inputs—bidirectional
Analog Inputs—bidirectional
Analog Output—bidirectional
Analog Outputs—bidirectional
Analog Inputs—bidirectional
Analog Inputs—bidirectional
Positive Supply Voltage Input
Ground
3
3
V-
4–7
—
8
—
NO1–NO4
NO1A–NO4A
COM
4–7
—
—
9–12
—
13
14
8, 9
—
COMA, COMB
NO8–NO5
NO4B–NO1B
V+
10–13
14
15
GND
_______________________________________________________________________________________
7
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
__________Ap p lic a t io n s In fo rm a t io n
+5V
Op e ra t io n w it h S u p p ly Vo lt a g e s
D1
Ot h e r t h a n ±5 V
V+
MAX398
MAX399
Using supply voltages less than ±5V reduces the analog
signal range. The MAX398/MAX399 muxes operate with
±3V to ±8V bipolar supplies or with a +3V to +15V single
supply. Connect V- to GND when operating with a single
supply. Both device types can also operate with unbal-
anced supplies, such as +10V and -5V. The Typical
Operating Characteristics graphs show typical on-resis-
tance with ±3V, ±5V, +3V and +5V supplies. (Switching
times increase by a factor of two or more for operation at
5V.)
*
*
*
*
NO
COM
V-
D2
Ove rvo lt a g e P ro t e c t io n
Proper power-supply sequencing is recommended for
all CMOS devices. Do not exceed the absolute maxi-
mum ratings, because stresses beyond the listed rat-
ings can cause permanent damage to the devices.
Always sequence V+ on first, then V-, followed by the
logic inputs, NO, or COM. If power-supply sequencing
is not possible, add two small signal diodes (D1, D2) in
s e rie s with s up p ly p ins for ove rvolta g e p rote c tion
(Figure 1). Adding diodes reduces the analog signal
range to one diode drop below V+ and one diode drop
* INTERNAL PROTECTION DIODES
-5V
8/MAX39
Figure 1. Overvoltage Protection Using External Blocking Diodes
above V-, but does not affect the devices’ low switch
resistance and low leakage characteristics. Device
operation is unchanged, and the difference between
V+ and V- should not exceed 17V. These protection
diodes are not recommended when using a single supply.
______________________________________________Te s t Circ u it s /Tim in g Dia g ra m s
+5V
V+
NO1
A2
A1
A0
+5V
-5V
NO2-NO7
MAX398
NO8
t
< 20ns
t < 20ns
F
R
V
EN
LOGIC
INPUT
V
EN
+3V
0V
EN
COM
V
OUT
50%
GND
V-
35pF
50Ω
300Ω
-5V
V
NO1
+5V
V+
90%
SWITCH
OUTPUT
V
OUT
NO1B
A1
A0
+5V
-5V
0V
90%
NO1A-NO4A
NO4B
V
NO8
t
t
TRANS
ON
TRANS
MAX399
V
EN
EN
COMB
V-
V
OUT
GND
35pF
50Ω
300Ω
-5V
Figure 2. Transition Time
_______________________________________________________________________________________
8
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX39
_________________________________Te s t Circ u it s /Tim in g Dia g ra m s (c o n t in u e d )
+5V
V+
V
EN
EN
NO1
+5V
NO2-NO8
A0
A1
A2
MAX398
t
< 20ns
< 20ns
COM
R
V
OUT
+3V
0V
t
LOGIC
INPUT
V
EN
F
GND
V-
50%
50Ω
35pF
1k
t
t
OFF(EN)
ON(EN)
-5V
0V
+5V
V+
10%
SWITCH
OUTPUT
V
OUT
V
EN
EN
NO1B
+5V
NO1A-NO4A
NO2B-NO4B,
COMA
90%
A0
A1
MAX399
COMB
V-
V
OUT
GND
50Ω
35pF
1k
-5V
Figure 3. Enable Switching Time
+5V
V+
V
EN
t
< 20ns
< 20ns
R
+2.4V
EN
A0
+3V
0V
t
LOGIC
INPUT
V
A
F
50%
NO1-NO8
+5V
+5V
A1
A2
MAX398
80%
V
A
SWITCH
OUTPUT
V
OUT
COM
V
OUT
GND
V-
35pF
t
OPEN
0V
300Ω
50Ω
-5V
Figure 4. Break-Before-Make Interval
_______________________________________________________________________________________
9
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
_________________________________Te s t Circ u it s /Tim in g Dia g ra m s (c o n t in u e d )
+5V
R
S
NO
EN
V+
+3V
0V
V
EN
LOGIC
INPUT
V
EN
OFF
ON
OFF
V
S
MAX398
A0
A1
A2
COM
CHANNEL
SELECT
V
OUT
∆V
OUT
C = 1000nF
L
V
OUT
GND
V-
∆V IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER
OUT
ERROR Q WHEN THE CHANNEL TURNS OFF.
-5V
Q = ∆V x C
OUT
L
8/MAX39
Figure 5. Charge Injection
+5V
V+
10nF
10nF
+5V
NO1
V+
NO1
NO2
V
IN
R = 50Ω
S
NO8
V
IN
MAX398
R = 1kΩ
MAX398
NO8
COM
V-
COM
V-
V
A0
A1
A2
V
OUT
OUT
A0
A1
A2
R = 50Ω
G
R = 1kΩ
L
R = 1kΩ
L
EN
GND
GND EN
10nF
10nF
-5V
-5V
V
OUT
V
OUT
OFF ISOLATION = 20log
CROSSTALK = 20log
V
IN
V
IN
Figure 6. Off Isolation
Figure 7. Crosstalk
+5V
V+
A2
NO1
NO8
1MHz
CHANNEL
A1
CAPACITANCE
ANALYZER
SELECT
MAX398
A0
COM
V-
GND EN
f = 1MHz
-5V
Figure 8. NO/COM Capacitance
10 ______________________________________________________________________________________
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
8/MAX39
__________________________________________Fu n c t io n a l Dia g ra m s /Tru t h Ta b le s
V+
V-
GND
V+
V-
GND
MAX398
MAX399
NO1
NO2
NO3
NO4
NO1A
NO2A
NO3A
NO4A
COMA
COMB
COM
NO5
NO6
NO7
NO8
NO1B
NO2B
NO3B
NO4B
DECODERS / DRIVERS
DECODERS / DRIVERS
A1
A0
A1
A2
EN
A0
EN
MAX398
MAX399
A2
A1
A0
EN ON SWITCH
A1
A0
EN ON SWITCH
X
0
0
0
0
1
1
1
1
X
0
0
1
1
0
0
1
1
X
0
1
0
1
0
1
0
1
0
1
1
1
1
1
1
1
1
NONE
X
0
0
1
1
X
0
1
0
1
0
1
1
1
1
NONE
1
2
3
4
5
6
7
8
1
2
3
4
LOGIC "O" V ≤ +0.8 V, LOGIC "1" V ≥ +2.4 V
AL
AH
______________________________________________________________________________________ 11
P re c is io n , 8 -Ch a n n e l/Du a l 4 -Ch a n n e l,
Lo w -Vo lt a g e , CMOS An a lo g Mu lt ip le x e rs
_Ord e rin g In fo rm a t io n (c o n t in u e d )
PART
TEMP. RANGE
0°C to +70°C
PIN-PACKAGE
16 Plastic DIP
16 Narrow SO
Dice*
MAX399CPE
MAX399CSE
MAX399C/D
MAX399EPE
MAX399ESE
MAX399EJE
MAX399MJE
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
16 Plastic DIP
16 Narrow SO
16 CERDIP**
16 CERDIP**
* Contact factory for dice specifications.
** Contact factory for package availability.
__________________________________________________________Ch ip To p o g ra p h ie s
8/MAX39
MAX398
MAX399
EN A0
A1 N. C. GND
EN A0
A1 A2 GND
V-
V-
V+
V+
NO1
NO1A
NO5
NO6
NO1B
NO2B
0. 102"
0. 102"
(2. 59mm)
(2. 59mm)
NO2A
NO3A
NO2
NO3
N. C.
NO7
NO3B
NO4B
NO4A
NO4
COM NO8
COMA COMB
0. 080"
0. 080"
(2. 03mm)
(2. 03mm)
TRANSISTOR COUNT: 161
TRANSISTOR COUNT: 161
SUBSTRATE CONNECTED TO V+
SUBSTRATE CONNECTED TO V+
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12 __________________Ma x im In t e g ra t e d P ro d u c t s , 1 2 0 S a n Ga b rie l Drive , S u n n yva le , CA 9 4 0 8 6 (4 0 8 ) 7 3 7 -7 6 0 0
© 1996 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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