MAX4514ESA-T [MAXIM]
暂无描述;型号: | MAX4514ESA-T |
厂家: | MAXIM INTEGRATED PRODUCTS |
描述: | 暂无描述 开关 |
文件: | 总8页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
19-1069; Rev 0; 6/96
Lo w -Vo lt a g e , Lo w -On -Re s is t a n c e ,
S P S T, CMOS An a lo g S w it c h e s
/MAX415
_______________Ge n e ra l De s c rip t io n
____________________________Fe a t u re s
♦ Available in SOT23-5 Package
The MAX4514/MAX4515 are single-pole/single-throw
(SPST), CMOS, low-volta g e , s ing le -s up p ly a na log
s witc he s with ve ry low s witc h on-re s is ta nc e . The
MAX4514 is normally open (NO). The MAX4515 is nor-
mally closed (NC).
♦ +2V to +12V Single-Supply Operation
♦ Guaranteed On-Resistance:
20Ω with +5V Supply
10Ω with +12V Supply
These CMOS switches can operate continuously with a
single supply between +2V and +12V. Each switch can
handle rail-to-rail analog signals. The off-leakage cur-
rent maximum is only 1nA at +25°C or 20nA at +85°C.
♦ Guaranteed Low Off-Leakage Currents:
1nA at +25°C
20nA at +85°C
♦ Guaranteed Low On-Leakage Currents:
2nA at +25°C
All digital inputs have 0.8V to 2.4V logic thresholds,
ensuring TTL/CMOS-logic compatibility when using a
+5V supply.
40nA at +85°C
♦ Low Charge Injection: 10pC
For pin-compatible parts for use with dual supplies, see
the MAX4516/MAX4517.
♦ Fast Switching Speed: t
= 150ns, t
= 100ns
ON
OFF
♦ Break-Before-Make Operation: t
> t
at +5V
ON
OFF
________________________Ap p lic a t io n s
Battery-Operated Equipment
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Communications Circuits
PCMCIA Cards
♦ TTL/CMOS-Logic Compatible with +5V Supply
______________Ord e rin g In fo rm a t io n
PART
TEMP. RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
PIN-PACKAGE
8 Plastic DIP
8 SO
MAX4514CPA
MAX4514CSA
MAX4514CUK
MAX4514C/D
5 SOT23-5
Dice*
Cellular Phones
Ordering Information continued at end of data sheet.
* Contact factory for dice specifications.
Modems
__________________________________________________________P in Co n fig u ra t io n s
TOP VIEW
COM
N.C.
N.C.
V+
1
2
3
4
NO
COM
N.C.
N.C.
V+
1
2
3
4
1
2
3
1
2
3
5
4
V+
IN
8
7
6
5
8
7
6
5
NC
5
4
V+
IN
COM
NC
COM
NO
GND
IN
GND
IN
N.C.
N.C.
MAX4514
MAX4515
GND
GND
MAX4514
MAX4515
DIP/SO
DIP/SO
SOT23-5
SOT23-5
MARKING INFORMATION (SOTs only)
SWITCH STATE
INPUT
LOT SPECIFIC CODE
MAX4514
OFF
MAX4515
ON
XX XX
LOW
HIGH
AE = MAX4514
ON
OFF
AF = MAX4515
N.C. = NOT INTERNALLY CONNECTED
________________________________________________________________ Maxim Integrated Products
1
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800
Lo w -Vo lt a g e , Lo w -On -Re s is t a n c e ,
S P S T, CMOS An a lo g S w it c h e s
ABSOLUTE MAXIMUM RATINGS
(Voltages Referenced to GND)
5-Pin SOT23-5 (derate 7.1mW/°C above +70°C) .........571mW
8-Pin CERDIP (derate 8.00mW/°C above +70°C).........640mW
Operating Temperature Ranges
V+ ..............................................................................-0.3V, +13V
Voltage into Any Terminal (Note 1)...............-0.3V to (V+ + 0.3V)
or ±20mA (whichever occurs first)
MAX4514C_ _/MAX4515C_ _ ..............................0°C to +70°C
MAX4514E_ _/MAX4515E_ _ ............................-40°C to +85°C
MAX4514MJA/MAX4515MJA .........................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10sec) .............................+300°C
Continuous Current into Any Terminal..............................±20mA
Peak Current, NO_ or COM_
(pulsed at 1ms,10% duty cycle)....................................±30mA
ESD per Method 3015.7 ..................................................>2000V
Continuous Power Dissipation (T = +70°C)
A
8-Pin Plastic DIP (derate 9.09mW/°C above +70°C) ....727mW
8-Pin SO (derate 5.88mW/°C above +70°C).................471mW
Note 1: Voltages exceeding V+ or GND on any signal terminal are clamped by internal diodes. Limit forward-diode current to
maximum current rating.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS—+5V Supply
/MAX415
(V+ = +4.5V to +5.5V, V
= 2.4V, V = 0.8V, T = T
to T , unless otherwise noted. Typical values are at T = +25°C.)
MAX A
INH
INL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
ANALOG SWITCH
Analog Signal Range
SYMBOL
CONDITIONS
UNITS
V
, V
,
COM NO
0
V+
V
Ω
Ω
V
NC
T
A
= +25°C
10
1
20
25
3
COM to NO or NC
On-Resistance
V+ = 5V, V
= 3.5V,
COM
R
ON
I
= 1mA
COM
T
A
= T
to T
MIN
MAX
MAX
T
= +25°C
COM to NO or NC
On-Resistance Flatness
A
V
= 1V, 2V, 3V;
= 1mA
COM
∆R
ON
I
COM
T
A
= T
to T
5
MIN
T
= +25°C
-1
-20
-100
-1
0.01
1
A
V+ = 5.5V,
= 1V,
NO or NC Off-Leakage
Current (Note 3)
I
NO(OFF)
V
COM
C, E
M
20
100
1
nA
nA
nA
T
= T
A
MIN
I
NC(OFF)
V
NO
or V = 4.5V
NC
to T
MAX
T
A
= +25°C
0.01
0.01
V+ = 5.5V,
= 1V,
COM Off-Leakage Current
(Note 3)
I
V
C, E
M
-20
-100
-2
20
100
2
COM(OFF)
COM
T
= T
A
MIN
V
NO
or V = 4.5V
NC
to T
MAX
T
A
= +25°C
V+ = 5.5V,
= 4.5V,
COM On-Leakage Current
(Note 3)
I
V
C, E
M
-40
-200
40
200
COM(ON)
COM
T
= T
A
MIN
V
NO
or V = 4.5V
NC
to T
MAX
DIGITAL I/O
Input Logic High
Input Logic Low
V
2.4
0
V+
V
V
IH
V
IL
0.8
Input Current Logic High
or Low
I
, I
V
IN
= V+, 0V
-1
0.03
1
µA
IH IL
SWITCH DYNAMIC CHARACTERISTICS
T
= +25°C
30
20
150
240
100
150
A
Turn-On Time
t
Figure 2
ns
ns
ON
T
A
= T
to T
MIN
MAX
MAX
T
A
= +25°C
Turn-Off Time
t
Figure 2
OFF
T
A
= T
to T
MIN
2
_______________________________________________________________________________________
Lo w -Vo lt a g e , Lo w -On -Re s is t a n c e ,
S P S T, CMOS An a lo g S w it c h e s
/MAX415
ELECTRICAL CHARACTERISTICS—+5V Supply (continued)
(V+ = +4.5V to +5.5V, V
= 2.4V, V = 0.8V, T = T
to T , unless otherwise noted. Typical values are at T = +25°C.)
MAX A
IN
H
INL
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
SYMBOL
CONDITIONS
UNITS
SWITCH DYNAMIC CHARACTERISTICS
Charge Injection
(Note 4)
C
R
= 1nF, V = 0V,
NO
= 0Ω, T = +25°C, Figure 1
A
L
Q
2
10
pC
dB
pF
S
R
L
= 50Ω, C = 15pF,
L
Off Isolation
V
ISO
≤-90
V
NO
= 1V
, f = 100kHz, T = +25°C, Figure 3
RMS A
C
C
,
NO(OFF)
NO or NC Off Capacitance
f = 1MHz, T = +25°C, Figure 4
A
14
NC(OFF)
COM Off Capacitance
COM On Capacitance
POWER SUPPLY
C
f = 1MHz, T = +25°C, Figure 4
14
30
pF
pF
COM(OFF)
A
C
f = 1MHz, T = +25°C, Figure 4
A
COM(ON)
I+
T
= +25°C
-1
1
A
V+ Supply Current
V
IN
= 0V or V+
µA
T
A
= T
to T
MAX
-10
10
MIN
ELECTRICAL CHARACTERISTICS—+12V Supply
(V+ = +11.4V to +12.6V, V
= 5V, V = 0.8V, T = T
to T
, unless otherwise noted. Typical values are at T = +25°C.)
INH
INL
A
MIN
MAX
A
MIN
TYP
(Note 2)
MAX
PARAMETER
ANALOG SWITCH
Analog Signal Range
SYMBOL
CONDITIONS
UNITS
V
, V
,
COM NO
0
V+
V
V
NC
T
= +25°C
5
10
15
2
A
COM to NO or NC
On-Resistance
R
V
= 10V, I = 1mA
COM
Ω
ON
COM
T
A
= T to T
MIN MAX
T
A
= +25°C
-2
-50
-200
-2
NO, NC Off-Leakage
Current (Note 3)
I
(NO)OFF
(NC)OFF
V
COM
= 10V, V = +1V
NO
C, E
M
50
200
2
nA
nA
nA
T
= T
A
MIN
I
to T
MAX
T
A
= +25°C
COM Off-Leakage Current
(Note 3)
V
= 10V,
or V = 1V
NC
COM
I
C, E
M
-50
-200
-4
50
200
4
COM(OFF)
T
= T
A
MIN
V
NO
to T
MAX
T
A
= +25°C
COM On-Leakage Current
(Note 3)
I
V
COM
= 10V
C, E
M
-100
-400
100
400
COM(ON)
T
= T
A
MIN
to T
MAX
DIGITAL I/O
Input Logic High
Input Logic Low
V
5
0
V+
V
V
INH
V
INL
0.8
Input Current Logic
High or Low
I
, I
V
IN
= V+, 0V
-1
0.03
1
µA
INH INL
POWER SUPPLY
T
= +25°C
-2
2
A
V+ Supply Current
I+
IN = 0V or V+
µA
T
A
= T
to T
-20
20
MIN
MAX
_______________________________________________________________________________________
3
Lo w -Vo lt a g e , Lo w -On -Re s is t a n c e ,
S P S T, CMOS An a lo g S w it c h e s
ELECTRICAL CHARACTERISTICS—+3V Supply
(V+ = +3V to +3.6V, T = T
to T , unless otherwise noted. Typical values are at T = +25°C.)
MAX A
A
MIN
MIN
TYP
(Note 2)
MAX
PARAMETER
ANALOG SWITCH
Analog Signal Range
SYMBOL
CONDITIONS
UNITS
V
, V
,
COM NO
0
V+
V
V
NC
T
= +25°C
20
50
75
A
COM to NO or NC
On-Resistance
V
= 1.5V, I
= 1mA,
COM
NO
R
Ω
ON
V+ = 3V
T
A
= T to T
MIN MAX
DIGITAL I/O
Input Logic High
Input Logic Low
V
2.4
0
V+
V
V
INH
V
INL
0.80
Input Current Logic
High or Low
I
, I
V
IN
= V+, 0V
-1
0.03
1
µA
INH INL
SWITCH DYNAMIC CHARACTERISTICS
T
= +25°C
45
30
150
240
100
150
/MAX415
A
Turn-On Time
(Note 4)
t
Figure 2
Figure 2
ns
ns
ON
T
A
= T
to T
MIN
MAX
MAX
T
A
= +25°C
Turn-Off Time
(Note 4)
t
OFF
T
A
= T
to T
MIN
Charge Injection
(Note 4)
Q
C
= 1nF, Figure 1
T
A
= +25°C
4
10
pC
L
POWER SUPPLY
T
= +25°C
-1
1
A
V+ Supply Current
I+
IN = 0V or V+
µA
T
A
= T
to T
-10
10
MIN
MAX
Note 2: The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column.
Note 3: Leakage parameters are 100% tested at maximum-rated hot operating temperature, and are guaranteed by correlation at +25°C.
Note 4: Guaranteed, not production tested.
Note 5: SOT packaged parts are 100% tested at +25°C. Limits at maximum and minimum rated temperature are guaranteed by
design and correlation limits at +25°C.
__________________________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s
(V+ = +5V, GND = 0V, T = +25°C, unless otherwise noted.)
A
ON-RESISTANCE vs.
ON-RESISTANCE vs. V
COM
CHARGE INJECTION vs. V
COM
V
COM
OVER TEMPERATURE
30
25
20
15
100
10
1
30
25
20
15
V+ = +5V
V+ = +2V
V
, V+ = +10V
NO/NC
V
, V+ = +5V
NO/NC
T
= +70°C
A
V+ = +3V
V+ = +5V
T
A
= +85°C
T
A
= +125°C
V+ = +9V
10
5
10
5
V+ = +12V
V
, V+ = +12V
NO/NC
0
T
= +25°C
A
V
NO/NC
, V+ = +3V
-5
-10
T
A
= 0°C
T
A
= -55°C
0
0
1
2
3
4
5
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
(V)
V
(V)
V
(V)
COM
COM
COM
4
_______________________________________________________________________________________
Lo w -Vo lt a g e , Lo w -On -Re s is t a n c e ,
S P S T, CMOS An a lo g S w it c h e s
/MAX415
____________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s (c o n t in u e d )
(V+ = +5V, GND = 0V, T = +25°C, unless otherwise noted.)
A
ON/OFF-LEAKAGE vs. TEMPERATURE
FREQUENCY RESPONSE
MAX4514/15-05
100
60
0
-10
V+ = +5.5V
10
ON LOSS
50
40
-20
30
-30
I
1
0.1
COM(ON)
20
-40
ON PHASE
10
-50
-60
0
0.01
I
-10
-20
-30
-40
-50
-60
-70
COM(OFF)
-80
OFF ISOLATION
0.001
0.0001
0.00001
-90
-100
-110
-120
50Ω IN AND OUT,
V+ = +5V
-60
-20
0
20 40 60 80 100 120 140
-40
0.0001 0.001 0.01 0.1
1
10 100 1000
TEMPERATURE (°C)
FREQUENCY (MHz)
TOTAL HARMONIC DISTORTION
vs. FREQUENCY
T
/T vs. V
ON OFF
SUPPLY
200
180
160
140
120
100
80
100
10
600Ω IN/OUT, V+ = +5V
T
ON
1
0.1
60
T
OFF
40
20
0
0.01
0
2
4
6
8
10
12
10
100
1000
10,000
100,000
V+ SUPPLY (V)
FREQUENCY (Hz)
______________________________________________________________P in De s c rip t io n
PIN
MAX4514
MAX4515
NAME
FUNCTION
DIP/SO
SOT23-5
DIP/SO
SOT23-5
1
1
—
5
1
1
—
5
COM
N.C.
V+
Analog Switch Common Terminal
2, 3, 5
2, 3, 5
No Connect (not internally connected)
Positive Supply-Voltage Input (analog and digital)
Digital Control Input
4
6
4
6
4
4
IN
7
3
7
3
GND
NO
Ground
8
2
—
8
—
2
Analog Switch (normally open)
Analog Switch (normally closed)
—
—
NC
Note: NO, NC, and COM pins are identical and interchangeable. Any may be considered as an input or an output; signals pass
equally well in both directions.
_______________________________________________________________________________________
5
Lo w -Vo lt a g e , Lo w -On -Re s is t a n c e ,
S P S T, CMOS An a lo g S w it c h e s
Lo g ic -Le ve l Th re s h o ld s
__________Ap p lic a t io n s In fo rm a t io n
The logic-level thresholds are CMOS/TTL compatible
when V+ is +5V. As V+ is raised, the level threshold
increases slightly. When V+ reaches +12V, the level
threshold is about 3.0V—above the TTL guaranteed
high-level minimum of 2.8V, but still compatible with
CMOS outputs.
P o w e r-S u p p ly Co n s id e ra t io n s
The MAX4514/MAX4515 construction is typical of most
CMOS analog switches, except that they have only two
supply pins: V+ and GND. V+ and GND drive the inter-
nal CMOS switches and set their analog voltage limits.
Reverse ESD-protection diodes are internally connect-
ed between each analog-signal pin and both V+ and
GND. One of these diodes conducts if any analog sig-
nal exceeds V+ or GND.
Do not connect the MAX4514/MAX4515’s V+ to +3V
and then connect the logic-level pins to logic-level
signals that operate from +5V supply. Output levels
can exceed +3V and violate the absolute maximum
ratings, damaging the part and/or external circuits.
Virtually all the analog leakage current comes from the
ESD diodes to V+ or GND. Although the ESD diodes on
a given signal pin are identical and therefore fairly well
balanced, they are reverse biased differently. Each is
biased by either V+ or GND and the analog signal. This
means their leakages will vary as the signal varies. The
difference in the two diode leakages to the V+ and GND
pins constitutes the analog-signal-path leakage current.
All analog leakage current flows between each pin and
one of the supply terminals, not to the other switch termi-
nal. This is why both sides of a given switch can show
leakage currents of the same or opposite polarity.
Hig h -Fre q u e n c y P e rfo rm a n c e
In 50Ω systems, signal response is reasonably flat up to
250MHz (see Typical Operating Characteristics). Above
20MHz, the on response has several minor peaks that
are highly layout dependent. The problem is not in turn-
ing the switch on; it’s in turning it off. The off-state switch
acts like a capacitor and passes higher frequencies with
less attenuation. At 10MHz, off isolation is about -45dB
in 50Ω systems, decreasing (approximately 20dB per
decade) as frequency increases. Higher circuit imped-
ances also make off isolation decrease. Off isolation is
about 3dB above that of a bare IC socket, and is due
entirely to capacitive coupling.
/MAX415
The re is no c onne c tion b e twe e n the a na log -s ig na l
paths and V+ or GND.
V+ and GND also power the internal logic and logic-
level translators. The logic-level translators convert the
logic levels to switched V+ and GND signals to drive
the analog signal gates.
______________________________________________Te s t Circ u it s /Tim in g Dia g ra m s
V+
V+
V+
0V
NO
or
NC
V
IN
V
NO
or V = 0V
NC
MAX4514
MAX4515
MAX4514
MAX4515
V
IN
IN
COM
V
OUT
GND
V
OUT
∆V
OUT
C
L
1000pF
50Ω
∆V IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER
OUT
ERROR Q WHEN THE CHANNEL TURNS OFF.
Q = ∆V x C
OUT
L
Figure 1. Charge Injection
_______________________________________________________________________________________
6
Lo w -Vo lt a g e , Lo w -On -Re s is t a n c e ,
S P S T, CMOS An a lo g S w it c h e s
/MAX415
_________________________________Te s t Circ u it s /Tim in g Dia g ra m s (c o n t in u e d )
V+
V+
50%
V
IN
V+
0V
NO
V
NO
MAX4514
GND
V PEAK
NO
V
IN
90%
90%
IN
COM
V
OUT
V
OUT
35pF
50Ω
300Ω
0V
t
ON
t
OFF
V+
V+
V+
0V
50%
V
IN
NC
V
NC
MAX4515
GND
V PEAK
NC
V
IN
90%
90%
IN
COM
V
OUT
V
OUT
35pF
50Ω
300Ω
0V
t
t
ON
OFF
Figure 2. Switching Times
V+ 10nF
NETWORK
ANALYZER
V+
V+
V
IN
V+
50Ω
50Ω
NO
OR
NC
NO
or
V
OUT
MAX4514
MAX4515
NC
V+
MEAS
REF
IN
COM
MAX4514
MAX4515
1MHz
AS
REQUIRED
GND
IN
COM
CAPACITANCE
ANALYZER
50Ω
50Ω
GND
MEASUREMENTS ARE STANDARDIZED AGAINST
SHORT AT SOCKET TERMINALS. OFF ISOLATION IS
MEASURED BETWEEN COM AND “OFF” TERMINAL
ON EACH SWITCH. ON LOSS IS MEASURED BETWEEN
COM AND “ON” TERMINAL ON EACH SWITCH. SIGNAL
DIRECTION THROUGH SWITCH IS REVERSED; WORST
VALUES ARE RECORDED.
V
V
OUT
OFF ISOLATION = 20log
ON LOSS = 20log
IN
V
OUT
V
IN
Figure 3. Off Isolation and On Loss
Figure 4. NO, NC, and COM Capacitance
_______________________________________________________________________________________
7
Lo w -Vo lt a g e , Lo w -On -Re s is t a n c e ,
S P S T, CMOS An a lo g S w it c h e s
_Ord e rin g In fo rm a t io n (c o n t in u e d )
___________________Ch ip To p o g ra p h y
PART
TEMP. RANGE
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
0°C to +70°C
PIN-PACKAGE
8 Plastic DIP
8 SO
MAX4514EPA
MAX4514ESA
MAX4514EUK
MAX4514MJA
MAX4515CPA
MAX4515CSA
MAX4515CUK
MAX4515C/D
MAX4515EPA
MAX4515ESA
MAX4515EUK
MAX4515MJA
GND
IN
5 SOT23-5
8 CERDIP**
8 Plastic DIP
8 SO
0°C to +70°C
0.046"
0°C to +70°C
5 SOT23-5
Dice*
(1.17mm)
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
8 Plastic DIP
8 SO
5 SOT23-5
8 CERDIP**
NO
OR
NC
COM
V+
*Contact factory for dice specifications.
**Contact factory for availability.
/MAX415
0.031"
(0.79mm)
TRANSISTOR COUNT: 19
SUBSTRATE IS INTERNALLY CONNECTED TO V+
__________________________________________________Ta p e -a n d -Re e l In fo rm a t io n
E
W
B
D
0
P
P
2
0
t
D
1
F
P
NOTE: DIMENSIONS ARE IN MM.
K
0
A
0
AND FOLLOW EIA481-1 STANDARD.
P0
3.988
40.005
2.007
0.254
±0.102
A0
B0
3.200
3.099
±0.102
±0.102
E
1.753
3.505
1.397
3.988
±0.102
P010
±0.203
±0.051
±0.127
F
±0.051
±0.102
±0.102
+0.102
+0.000
P2
t
K0
P
D
1.499
0.991
+0.254
+0.000
D1
+0.305
-0.102
W
8.001
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
8
___________________Ma x im In t e g ra t e d P ro d u c t s , 1 2 0 S a n Ga b rie l Drive , S u n n yva le , CA 9 4 0 8 6 (4 0 8 ) 7 3 7 -7 6 0 0
© 1996 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
相关型号:
©2020 ICPDF网 联系我们和版权申明