MAX4575ESA+ [MAXIM]
SPST, 2 Func, 1 Channel, CMOS, PDSO8, 0.150 INCH, SOIC-8;
| 型号： | MAX4575ESA+ |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | SPST, 2 Func, 1 Channel, CMOS, PDSO8, 0.150 INCH, SOIC-8 开关 |
| 文件： | 总12页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-1762; Rev 0; 7/00
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
General Description
____________________________Features
The MAX4575/MAX4576/MAX4577 are low-voltage,
high electrostatic discharge (ESD)-protected, dual sin-
gle-pole/single-throw (SPST) analog switches. The nor-
mally closed (NO) and normally open (NC) pins are
protected against 15kV ESD without latchup or dam-
age. Each switch can handle Rail-to-Rail® analog sig-
nals. Off-leakage current is 0.5nA at +25°C. These
analog switches are suitable for low-distortion audio
applications and are the preferred solution over
mechanical relays in automated test equipment or
applications where current switching is required. They
have low power requirements (0.5µW), require less
board space, and are more reliable than mechanical
relays. Each device is controlled by TTL/CMOS input
voltage levels and is bilateral.
ꢀ ESD-Protected NO/NC Pins
±±15k ꢀ(Humn ꢁodꢂ ꢃodeꢄl
±±15k ꢀꢅEC ±ꢆꢆꢆ-ꢇ-ꢈ ꢉir-ꢊma Discꢋmrꢌel
±ꢍ5k ꢀꢅEC ±ꢆꢆꢆ-ꢇ-ꢈ Contmct Discꢋmrꢌel
ꢀ Pin Couamtibꢄe witꢋ ꢃꢉXꢇ1ꢇ±/ꢃꢉXꢇ1ꢇꢈ/ꢃꢉXꢇ1ꢇ3
ꢀ ꢊHmrmnteed On-Resistmnce
7ꢆΩ ꢀumxl mt +1k
±1ꢆΩ ꢀumxl mt +3k
ꢀ On-Resistmnce Fꢄmtness
ꢈΩ ꢀtꢂal mt +1k
6Ω ꢀtꢂal mt +3k
ꢀ On-Resistmnce ꢃmtcꢋinꢌ
ꢆ.1Ω ꢀtꢂal mt +1k
These switches feature guaranteed operation from a
single supply of +2V to +12V, making them ideal for
use in battery-powered applications. On-resistance is
70Ω (max), matched between switches to 0.5Ω (typ)
and flat (2Ω typ) over the specified signal range.
The MAX4575 has two NO switches, the MAX4576 has
two NC switches, and the MAX4577 has one NO and
one NC switch. These devices are available in 8-pin
µMAX and SO packages.
ꢆ.6Ω ꢀtꢂal mt +3k
ꢀ ꢊHmrmnteed ꢆ.1nꢉ Lem5mꢌe CHrrent mt T = +ꢈ1°C
ꢉ
ꢀ +ꢈk to +±ꢈk Sinꢌꢄe-SHaaꢄꢂ koꢄtmꢌe
ꢀ TTL/CꢃOS-Loꢌic Couamtibꢄe
ꢀ Low Distortion: ꢆ.ꢆ±1%
ꢀ -3dꢁ ꢁmndwidtꢋ >3ꢆꢆꢃ(z
ꢀ Rmiꢄ-to-Rmiꢄ Siꢌnmꢄ Rmnꢌe
Applications
Battery-Powered Systems
-in Configurations/
Functional Diagrams/Truth Tables
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Sample-and-Hold Circuits
TOP VIEW
MAX4575
Communications Circuits
Relay Replacement
8
7
6
5
1
2
3
4
NO1
COM1
IN2
V+
IN1
COM2
NO2
Ordering Information
GND
PART
TEMP. RANGE
PIN-PACKAGE
SO/µMAX
MAX4575EUA
-40°C to +85°C
8 µMAX
MAX4575ESA
MAX4576EUA
MAX4576ESA
MAX4577EUA
MAX4577ESA
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
8 SO
MAX4575
LOGIC
SWITCH
8 µMAX
8 SO
0
1
OFF
ON
8 µMAX
8 SO
SWITCHES SHOWN FOR LOGIC "0" INPUT
Pin Configurations/Functional Diagrams/Truth Tables
continued at end of data sheet.
Rail-to-Rail is a registered trademark of Nippon Motorola, Ltd.
________________________________________________________________ Maxim Integrated Products
±
For free samples and the latest literature, visit www.maxim-ic.com or phone 1-800-998-8800.
For small orders, phone 1-800-835-8769.
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
ABSOLUTE MAXIMUM RATINGS
V+ to GND..............................................................-0.3V to +13V
IN_, COM_, NO_, NC_ to GND (Note 1).......-0.3V to (V+ + 0.3V)
Continuous Current (NO_, NC_, COM)............................. 10ꢀA
Peak Current (NO_, NC_, COM_; pulsed at 1ꢀs 10% duty
cycle)................................................................................ 30ꢀA
ESD Protection per Method IEC 1000-4-2 (NO_, NC_)
Continuous Power Dissipation (T = +70°C)
A
8-Pin µMAX (derate 4.1ꢀW/°C above +70°C).............330ꢀW
8-Pin SO (derate 8ꢀW/°C above +70°C).....................640ꢀW
Operating Teꢀperature Range
MAX457_E_A................................................-40°C to +85°C
Storage Teꢀperature Range.............................-65°C to +150°C
Maxiꢀuꢀ Die Teꢀperature..............................................+150°C
Lead Teꢀperature (soldering, 10s) .................................+300°C
Air-Gap Discharge......................................................... 15kV
Contact Discharge........................................................... 8kV
ESD Protection per Method 3015.7
NO_, NC_........................................................................... 15kV
V+, GND, IN_, COM_........................................................ 2.5kV
Note 1: Signals on NO_, NC_, COM_, or IN_ exceeding V+ or GND are claꢀped by internal diodes. Liꢀit forward current to ꢀaxiꢀuꢀ
current rating.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS—SINGLE +5V SUPPLY
(V+ = +4.5V to +5.5V, V = 2.4V, V = 0.8V, T = T
to T
, unless otherwise specified. Typical values are at V+ = +5V,
MAX
IH
IL
A
MIN
T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
ANALOG SWITCH
V
,
COM_
V
,
Input Voltage Range
0
V+
V
NO_
V
NC_
V+ = +4.5V,
= 1ꢀA,
T
T
T
T
T
T
T
= +25°C
45
0.5
2
70
75
2
A
A
A
A
A
A
A
On-Resistance
R
Ω
I
ON
COM_
= T
to T
V
or V
= 3.5V
= 3.5V
MIN
MAX
NO_
NC_
V+ = +4.5V,
= 1ꢀA,
= +25°C
= T to T
On-Resistance Match Between
Channels (Note 3)
∆R
Ω
I
ON
COM_
3
V
or V
MIN
MAX
NO_
NC_
V+ = +4.5V, I
= 1ꢀA,
= +25°C
= T to T
MAX
4
COM_
On-Resistance Flatness (Note 4)
R
V
NO_
or V = 1V,
NC_
Ω
FLAT(ON)
5
2.25V, 3.5V
MIN
V+ = 5.5V
= +25°C
to T
MAX
-0.5
-5
0.01
0.01
0.5
5
Off-Leakage Current
(NO_ or NC_) (Note 5)
I
I
, I
V _ = 1V, 4.5V
COM
nA
nA
NO_ NC_
T = T
A
V
NO
_ or V _ = 4.5V, 1V
MIN
NC
V+ = 5.5V
T
A
= +25°C
-0.5
-5
0.5
5
COM_ Off-Leakage Current
(Note 5)
V
V
_ = 1V, 4.5V
COM_(OFF)
COM
T = T
A
to T
_ or V _ = 4.5V, 1V
MIN
MAX
NO
NC
V+ = 5.5V
T
= +25°C
-1
0.02
1
A
COM_ On-Leakage Current
(Note 5)
V
V
_= 1V, 4.5V
COM
I
nA
COM_(ON)
_ or V _ = 1V,
NO
NC
T = T
A
to T
-10
10
MIN
MAX
4.5V or floating
2
_______________________________________________________________________________________
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
ELECTRICAL CHARACTERISTICS—SINGLE +5V SUPPLY (continued)
(V+ = +4.5V to +5.5V, V = 2.4V, V = 0.8V, T = T
to T
, unless otherwise specified. Typical values are at V+ = +5V,
MAX
IH
IL
A
MIN
T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
2.4
-1
TYP
MAX
UNITS
LOGIC INPUT
IN_ Input High
V
V
V
IH
IN_ Input Low
V
0.8
1
IL
Logic Input Leakage
SWITCH DYNAMIC
I
V
V
= 0 or V+
_ = 3V,
µA
IN
IN
T
A
= +25°C
90
50
45
150
180
80
COM
Turn-On Tiꢀe
Turn-Off Tiꢀe
ns
ns
ns
R = 300Ω, C = 35pF,
L
L
t
ON
T = T
A
to T
Figure 1
MIN
MAX
MAX
MAX
V
_ = 3V,
COM
T
A
= +25°C
R = 300Ω, C = 35pF,
L
L
t
OFF
T = T to T
A MIN
100
Figure 1
T
A
= +25°C
5
4
Break-Before-Make
(MAX4577 only)
V
_ = 3V,
COM
R = 300Ω, C = 35pF
L
L
T = T
A
to T
MIN
Signal = 0dBꢀ, R = R
IN
Figure 2
= 50Ω, C = 5pF,
L
OUT
On-Channel Bandwidth -3dB
Charge Injection
BW
Q
300
4
MHz
pC
V
= 2V, C = 1.0nF, R
= 0, Figure 3
GEN
L
GEN
V
_ = V _ = GND, f = 1MHz,
NO
NC
NO_ or NC_ Off-Capacitance
C
20
pF
OFF
Figure 4
COM_ Off-Capacitance
COM_ On-Capacitance
C
V
V
_ = GND, f = 1MHz, Figure 4
12
20
pF
pF
COM(OFF)
COM
_ = V _, V _ = GND, f = 1MHz,
COM
C
NO
NC
COM(ON)
R = 50Ω, C = 5pF, f = 1MHz, Figure 2
-75
-45
-90
-70
0.015
110
3
L
L
Off-Isolation (Note 7)
Crosstalk (Note 8)
V
dB
dB
ISO
R = 50Ω, C = 5pF, f = 10MHz, Figure 2
L
L
R = 50Ω, C = 5pF, f = 1MHz, Figure 6
L
L
V
CT
R = 50Ω, C = 5pF, f = 10MHz, Figure 6
L
L
Total Harꢀonic Distortion
ESD SCR Holding Current
ESD SCR Holding Voltage
POWER SUPPLY
THD
R = 600Ω, f = 20Hz to 20kHz
L
%
ꢀA
V
I
H
V
H
Power-Supply Range
V+
I+
2
12
1
V
T
= +25°C
A
V+ = 5.5V,
= 0 or V+
Positive Supply Current
µA
V
IN
T = T
A
to T
MAX
10
MIN
_______________________________________________________________________________________
3
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
ELECTRICAL CHARACTERISTICS—SINGLE +3V SUPPLY
(V+ = +2.7V to +3.6V, V = 2.0V, V = 0.6V, T = T
to T , unless otherwise specified. Typical values are at T = +25°C.) (Note 2)
MAX A
IH
IL
A
MIN
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
ANALOG SWITCH
V
,
COM_
Input Voltage Range
On-Resistance
V
V
,
0
V+
V
NO_
NC_
V+ = 2.7V;
= 1ꢀA;
T
T
= +25°C
70
120
150
A
R
I
Ω
Ω
Ω
ON
COM_
= T
to T
V
NO_
or V
= 1.5V
A
MIN
MAX
NC_
T
T
= +25°C
0.6
6
3
4
A
On-Resistance Match Between
Channels (Notes 3, 8)
V+ = 2.7V; I
= 1ꢀA;
COM_
∆R
ON
V
NO_
or V
= 1.5V
NC_
= T
to T
A
MIN
MAX
V+ = 2.7V; I
or V
= 1ꢀA;
T
= +25°C
12
15
COM_
A
A
On-Resistance Flatness
(Notes 4, 8)
R
V
= 0.5V,
FLAT(ON)
NO_
NC_
T
= T
to T
MAX
1.5V, 2.2V
MIN
LOGIC INPUT
IN_ Input High
V
2.0
-1
V
V
IH
IN_ Input Low
V
0.6
1
IL
Logic Input Leakage Current
I
V
V
= 0 or V+
µA
IN
IN
SWITCH DYNAMIC CHARACTERISTICS
_ = 1.5V,
COM
T
A
T
A
T
A
T
A
= +25°C
150
60
250
300
100
150
Turn-On Tiꢀe
Turn-Off Tiꢀe
t
ns
ns
ON
RL = 300Ω, CL = 35pF,
Figure 1
= T
to T
MAX
MIN
V
_ = 1.5V,
COM
= +25°C
= T to T
t
R = 300Ω, C = 35pF,
Figure 1
OFF
L
L
MIN
MAX
T
T
= +25°C
5
4
A
Break-Before-Make
(MAX4577 only)
V
_ = 1.5V,
COM
ns
R = 300Ω, C = 35pF
L
L
= T
to T
A
MIN
MAX
V
= 1.5V, C = 1.0nF, R
= 0,
GEN
L
GEN
Charge Injection
Q
5
pC
Figure 3
ESD SCR Holding Current
ESD SCR Holding Voltage
POWER SUPPLY
I
110
3
ꢀA
V
H
V
H
Power-Supply Range
V+
I+
2
12
1
V
T
T
= +25°C
A
V+ = 3.6V,
Positive Supply Current
µA
V
= 0 or V+
IN
= T
to T
10
A
MIN
MAX
Note 2: The algebraic convention, where the ꢀost negative value is a ꢀiniꢀuꢀ and the ꢀost positive value is a ꢀaxiꢀuꢀ, is used
in this data sheet.
Note 3: ∆R
= R
- R
.
ON
ON(MAX)
ON(MIN)
Note 4: Flatness is defined as the difference between the ꢀaxiꢀuꢀ and the ꢀiniꢀuꢀ values of on-resistance as ꢀeasured over
the specified analog signal ranges.
Note 5: Leakage paraꢀeters are 100% tested at T ( ), and guaranteed by correlation at +25°C.
A MAX
Note 6: Off-Isolation = 20log (V
/ V ), V
= output, V
= input to off switch.
10 COM
NO
COM
NO
Note 7: Between any two switches.
Note 8: Guaranteed by design.
4
_______________________________________________________________________________________
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
Typical Operating Characteristics
(V+ = 5V, T = +25°C, unless otherwise specified.)
A
ON/OFF-LEAKAGE CURRENT
vs. TEMPERATURE
ON-RESISTANCE vs. V
AND
ON-RESISTANCE vs. V
COM
AND TEMPERATURE
COM
SUPPLY VOLTAGE
1000
180
160
140
120
100
80
60
50
40
30
V+ = 1.8V
100
10
V+ = 2.5V
V+ = 3.3V
T
A
= -40°C
ON
T
A
= +25°C
V+ = 5V
T
A
= +85°C
OFF
60
20
10
0
40
20
1
0
-40
-15
10
35
60
85
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
(V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
(V)
TEMPERATURE (°C)
V
COM
V
COM
TURN-ON/TURN-OFF TIME
vs. SUPPLY VOLTAGE
SUPPLY CURRENT
vs. V AND TEMPERATURE
TURN-ON/TURN-OFF TIME
vs. TEMPERATURE
CC
12
10
8
100
90
140
120
100
80
V+ = 5V
= 3V
V+ = 5V
V
COM
t
ON
80
70
60
50
40
30
t
ON
6
t
OFF
60
4
2
0
t
OFF
40
20
10
0
20
0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
0
3
6
9
12
TEMPERATURE (°C)
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
TURN-ON/TURN-OFF TIME
TURN-ON/TURN-OFF
vs. V
(V+ = 3V)
vs. V
(V+ = 5V)
COM
COM
CHARGE INJECTION vs. V
COM
140
120
100
80
90
80
70
60
50
40
30
20
10
0
20
15
10
5
V+ = 3V
V+ = 5V
t
ON
t
ON
V+ = 3V
t
OFF
t
OFF
60
0
-5
40
20
V+ = 5V
2
0
-10
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
(V)
0
1
3
4
5
V
(V)
V
COM
COM
V
COM
(V)
_______________________________________________________________________________________
5
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
Typical Operating Characteristics (continued)
(V+ = 5V, T = +25°C, unless otherwise specified.)
A
TOTAL HARMONIC DISTORTION
+ NOISE vs. FREQUENCY
FREQUENCY RESPONSE
20
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
0
-20
ON-LOSS
-40
OFF-LOSS
-60
-80
CROSSTALK
-100
V+ = 5V
600Ω IN AND OUT
-120
0.01
0.1
1
10
100
1000
10
100
1k
FREQUENCY (Hz)
10k
100k
FREQUENCY (MHz)
-in Description
PIN
NAME
FUNCTION
MAX4575
MAX4576
MAX4577
1
—
2
—
1
1
—
2
NO1
NC1
COM1
IN2
Analog Switch 1—Norꢀally Open
Analog Switch 1—Norꢀally Closed
Analog Switch 1—Coꢀꢀon
Digital Control Input 2
2
3
3
3
4
4
4
GND
NO2
NC2
COM2
IN1
Ground
5
—
5
—
5
Analog Switch 2—Norꢀally Open
Analog Switch 2—Norꢀally Closed
Analog Switch 2—Coꢀꢀon
Digital Control Input 1
—
6
6
6
7
7
7
8
8
8
V+
Positive Supply Voltage Input
6
_______________________________________________________________________________________
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
MAX4575
MAX4576
MAX4577
V+
t
t
< 20ns
< 20ns
R
F
SWITCH
OUTPUT
V+
LOGIC
INPUT
V+
0
50%
COM
IN
NO_/NC_
SWITCH
INPUT
V
COM
V
OUT
R
C
L
35pF
L
300Ω
t
OFF
GND
V
0.9 x V
OUT
OUT
LOGIC
INPUT
0.9 x V
0UT
SWITCH
OUTPUT
0
t
ON
C INCLUDES FIXTURE AND STRAY CAPACITANCE.
L
R
L
V
= V
COM
OUT
(
)
R + R
L
ON
Figure 1. Switching Time
switches is independently controlled by a TTL/CMOS-
level-coꢀpatible digital input.
MAX4575
MAX4576
MAX4577
Applications Information
Do not exceed the absolute ꢀaxiꢀuꢀ ratings because
stresses beyond the listed ratings ꢀay cause perꢀa-
nent daꢀage to the device.
V+
V+
10nF
SIGNAL
GENERATOR 0dBm
COM
Proper power-supply sequencing is recoꢀꢀended for
all CMOS devices. Always sequence V+ on first, fol-
lowed by the logic inputs, NO/NC, or COM.
V
OR
IL
V
IH
IN
Operating Considerations for
Highꢂkoltage Eupply
The MAX4575/MAX4576/MAX4577 are capable of
+12V single-supply operation with soꢀe precautions.
The absolute ꢀaxiꢀuꢀ rating for V+ is +13V (refer-
enced to GND). When operating near this region,
bypass V+ with a ꢀiniꢀuꢀ 0.1µF capacitor to ground
as close to the IC as possible.
ANALYZER
NO_/NC_
GND
R
L
Figure 2. Off-Isolation/On-Channel Bandwidth
±±5ꢀk ꢁED -rotection
The MAX4575/MAX4576/MAX4577 are 15kV ESD pro-
tected (according to IEC 1000-4-2) at the NC/NO terꢀi-
nals. To accoꢀplish this, bidirectional SCRs are
included on-chip between these terꢀinals. When the
voltages at these terꢀinals go Beyond-the-Rail™, the
corresponding SCRs turns on in a few nanoseconds
Detailed Description
The MAX4575/MAX4576/MAX4577 are dual SPST
CMOS analog switches with circuitry providing 15kV
ESD protection on the NO and NC pins. The CMOS
switch construction provides rail-to-rail signal handling
while consuꢀing virtually no power. Each of the two
Beyond-the-Rail is a trademark of Maxim Integrated Products.
_______________________________________________________________________________________
7
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
MAX4575
MAX4576
MAX4577
V+
∆V
OUT
V+
V
OUT
R
GEN
COM
NO_/NC_
V
OUT
C
L
V
GEN
GND
IN
ON
Q = (∆V )(C )
OFF
OFF
IN
OUT
L
V
IN
Figure 3. Charge Injection
MAX4575
MAX4576
MAX4577
MAX4575
MAX4576
MAX4577
V+
V+
V+
10nF
10nF
COM
SIGNAL
GENERATOR 0dBm
V+
COM1
50Ω
NO1/NC1
IN2
IN1
IN
V
IL
V
OR
0 OR
2.4V
0 OR 2.4V
ANALYZER
CAPACITANCE
METER
IH
COM2
NO_/NC_
GND
NO2/NC2
GND
NC
f = 1MHz
R
L
Figure 4. Channel Off/On-Capacitance
Figure 5. Crosstalk
and bypass the surge safely to ground. This ꢀethod is
superior to using diode claꢀps to the supplies
because, unless the supplies are very carefully decou-
pled through low-ESR capacitors, the ESD current
through the diode claꢀp could cause a significant
spike in the supplies. This ꢀay daꢀage or coꢀproꢀise
the reliability of any other chip powered by those saꢀe
supplies.
terꢀinals froꢀ overvoltages that are not a result of ESD
strikes. These diodes also protect the device froꢀ
iꢀproper power-supply sequencing.
Once the SCR turns on because of an ESD strike, it
continues to be on until the current through it falls
below its “holding current.” The holding current is typi-
cally 110ꢀA in the positive direction (current flowing
into the NC/NO terꢀinal) at rooꢀ teꢀperature (see SCR
Holding Current vs. Teꢀperature in the Typical
Operating Characteristics). Design the systeꢀ so that
any sources connected to NC/NO are current liꢀited to
a value below the holding current to ensure the SCR
There are diodes froꢀ NC/NO to the supplies in addi-
tion to the SCRs. There is a resistance in series with
each of these diodes to liꢀit the current into the sup-
plies during an ESD strike. The diodes protect these
8
_______________________________________________________________________________________
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
turns off when the ESD event is finished and norꢀal
operation ꢀay be resuꢀed. Also, keep in ꢀind that the
holding current varies significantly with teꢀperature.
The worst case is at +85°C when the holding currents
drop to 70ꢀA. Since this is a typical nuꢀber to guaran-
tee turn-off of the SCRs under all conditions, the sources
connected to these terꢀinals should be current liꢀited
to not ꢀore than half this value. When the SCR is
latched, the voltage across it is about 3V, depending on
the polarity of the pin current. The supply voltages do
not affect the holding current appreciably. The sources
connected to the COM side of the switches do not need
to be current liꢀited since the switches turn off internally
when the corresponding SCR(s) latches.
Human Body Model
Figure 6 shows the Huꢀan Body Model and Figure 7
shows the waveforꢀ it generates when discharged into
a low iꢀpedance. This ꢀodel consists of a 100pF
capacitor charged to the ESD voltage of interest, which
can be discharged into the test device through a 1.5kΩ
resistor.
IEC 1000-4-2
The IEC 1000-4-2 standard covers ESD testing and per-
forꢀance of finished equipꢀent; it does not specifically
refer to integrated circuits. The MAX4575/MAX4576/
MAX4577 enable the design of equipꢀent that ꢀeets
Level 4 (the highest level) of IEC 1000-4-2, without addi-
tional ESD protection coꢀponents.
Even though ꢀost of the ESD current flows to GND
through the SCRs, a sꢀall portion of it goes into V+.
Therefore, it is a good idea to bypass the V+ with 0.1µF
capacitors directly to the ground plane.
The ꢀajor difference between tests done using the
Huꢀan Body Model and IEC 1000-4-2 is higher peak
current in IEC 1000-4-2. Because series resistance is
lower in the IEC 1000-4-2 ESD test ꢀodel (Figure 8),
the ESD withstand voltage ꢀeasured to this standard is
generally lower than that ꢀeasured using the Huꢀan
Body Model. Figure 9 shows the current waveforꢀ for
the 8kV IEC 1000-4-2 Level 4 ESD Contact Discharge
test.
ESD protection can be tested in various ways. Trans-
ꢀitter outputs and receiver inputs are characterized for
protection to the following:
•
•
15kV using the Huꢀan Body Model
8kV using the Contact Discharge ꢀethod speci-
fied in IEC 1000-4-2 (forꢀerly IEC 801-2)
The Air-Gap test involves approaching the device with
a charged probe. The Contact Discharge ꢀethod con-
nects the probe to the device before the probe is ener-
gized.
•
15kV using the Air-Gap Discharge ꢀethod speci-
fied in IEC 1000-4-2 (forꢀerly IEC 801-2).
ESD Test Conditions
Chip Information
TRANSISTOR COUNT: 78
Contact Maxiꢀ Integrated Products for a reliability
report that docuꢀents test setup, ꢀethodology, and
results.
PROCESS: CMOS
_______________________________________________________________________________________
9
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
R
R
D
1500Ω
C
1MΩ
I 100%
P
90%
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
I
r
DISCHARGE
RESISTANCE
CHARGE-CURRENT
LIMIT RESISTOR
AMPERES
HIGH-
VOLTAGE
DC
DEVICE
UNDER
TEST
C
s
100pF
STORAGE
CAPACITOR
36.8%
SOURCE
10%
0
TIME
0
t
RL
t
DL
CURRENT WAVEFORM
Figure 6. Human Body ESD Test Model
Figure 7. Human Body Model Current Waveform
R
R
D
C
I
50MΩ to 100MΩ
330Ω
100%
90%
DISCHARGE
RESISTANCE
CHARGE-CURRENT
LIMIT RESISTOR
HIGH-
VOLTAGE
DC
DEVICE
UNDER
TEST
C
STORAGE
CAPACITOR
s
150pF
SOURCE
10%
t = 0.7ns to 1ns
r
t
30ns
60ns
Figure 8. IEC 1000-4-2 ESD Test Model
Figure 9. IEC 1000-4-2 ESD Generator Current Waveform
10 ______________________________________________________________________________________
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
-in Configurations/Functional Diagrams/Truth Tables (continued)
TOP VIEW
MAX4577
MAX4576
8
7
6
5
8
7
6
5
1
2
3
4
1
2
3
4
NC1
COM1
IN2
NO1
COM1
IN2
V+
V+
IN1
IN1
COM2
NC2
COM2
NC2
GND
GND
SO/µMAX
SO/µMAX
MAX4576
MAX4577
SWITCH 1
SWITCH 2
LOGIC
LOGIC
SWITCH
0
1
ON
OFF
0
1
OFF
ON
ON
OFF
SWITCHES SHOWN FOR LOGIC "0" INPUT
-acꢀage Information
______________________________________________________________________________________ 11
±±5ꢀk ꢁEDꢂ-rotected, Lowꢂkoltage, Dual, E-ET,
CMOE Analog Ewitches
-acꢀage Information (continued)
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12 ____________________Maxim Integrated -roducts, ±20 Ean Gabriel Drive, Eunnyvale, CA 94086 408ꢂ737ꢂ7600
© 2000 Maxiꢀ Integrated Products
Printed USA
is a registered tradeꢀark of Maxiꢀ Integrated Products.
相关型号：
©2020 ICPDF网 联系我们和版权申明