MAX660CSA+T [MAXIM]
Switched Capacitor Converter, 0.12A, 80kHz Switching Freq-Max, CMOS, PDSO8, 0.150 INCH, SOP-8;
| 型号： | MAX660CSA+T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Switched Capacitor Converter, 0.12A, 80kHz Switching Freq-Max, CMOS, PDSO8, 0.150 INCH, SOP-8 转换器 |
| 文件： | 总12页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-3293; Rev. 2; 9/96
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
MAX60
_______________Ge n e ra l De s c rip t io n
___________________________ Fe a t u re s
♦ Small Capacitors
The MAX660 monolithic, charge-pump voltage inverter
converts a +1.5V to +5.5V input to a corresponding
-1.5V to -5.5V outp ut. Us ing only two low-c os t
capacitors, the charge pump’s 100mA output replaces
switching regulators, eliminating inductors and their
a s s oc ia te d c os t, s ize , a nd EMI. Gre a te r tha n 90%
efficiency over most of its load-current range combined
with a typical operating current of only 120µA provides
ideal performance for both battery-powered and board-
level voltage conversion applications. The MAX660 can
also double the output voltage of an input power supply
or b a tte ry, p rovid ing +9.35V a t 100mA from a +5V
input.
♦ 0.65V Typ Loss at 100mA Load
♦ Low 120µA Operating Current
♦ 6.5Ω Typ Output Impedance
♦ Guaranteed R
< 15Ω for C1 = C2 = 10µF
OUT
♦ Pin-Compatible High-Current ICL7660 Upgrade
♦ Inverts or Doubles Input Supply Voltage
♦ Selectable Oscillator Frequency: 10kHz/80kHz
♦ 88% Typ Conversion Efficiency at 100mA
(I to GND)
L
A frequency control (FC) pin selects either 10kHz typ or
80kHz typ (40kHz min) operation to optimize capacitor
size and quiescent current. The oscillator frequency
can also be adjusted with an external capacitor or
driven with an external clock. The MAX660 is a pin-
compatible, high-current upgrade of the ICL7660.
______________Ord e rin g In fo rm a t io n
PART
TEMP. RANGE
0°C to +70°C
PIN-PACKAGE
8 Plastic DIP
8 SO
MAX660CPA
MAX660CSA
MAX660C/D
MAX660EPA
MAX660ESA
MAX660MJA
0°C to +70°C
0°C to +70°C
Dice*
The MAX660 is available in both 8-pin DIP and small-
outline packages in commercial, extended, and military
temperature ranges.
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
8 Plastic DIP
8 SO
8 CERDIP
For 50mA applications, consider the MAX860/MAX861
pin-compatible devices (also available in ultra-small
µMAX packages).
*Contact factory for dice specifications.
_________Typ ic a l Op e ra t in g Circ u it s
________________________Ap p lic a t io n s
Laptop Computers
+V
IN
1.5V TO 5.5V
Medical Instruments
1
2
8
7
FC
V+
OSC
LV
Interface Power Supplies
CAP+
GND
MAX660
Hand-Held Instruments
C1
6
5
3
4
Operational-Amplifier Power Supplies
INVERTED
NEGATIVE
VOLTAGE
OUTPUT
1µF to 150µF
CAP-
OUT
__________________P in Co n fig u ra t io n
C2
1µF to 150µF
VOLTAGE INVERTER
TOP VIEW
DOUBLED
POSITIVE
VOLTAGE
OUTPUT
1
2
8
7
V+
FC
1
2
3
4
8
7
6
5
FC
CAP+
GND
V+
C1
1µF to 150µF
C2
1µF to 150µF
CAP+
OSC
MAX660
OSC
6
5
3
4
MAX660
LV
+V
GND
CAP-
IN
LV
2.5V TO 5.5V
OUT
CAP-
OUT
DIP/SO
POSITIVE VOLTAGE DOUBLER
________________________________________________________________ Maxim Integrated Products
1
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
ABSOLUTE MAXIMUM RATINGS
Supply Voltage (V+ to GND, or GND to OUT).......................+6V
LV Input Voltage ...............................(OUT - 0.3V) to (V+ + 0.3V)
FC and OSC Input Voltages........................The least negative of
(OUT - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Operating Temperature Ranges
MAX660C_ _ ........................................................0°C to +70°C
MAX660E_ _ .....................................................-40°C to +85°C
MAX660MJA ...................................................-55°C to +125°C
Storage Temperature Range ............................... -65°to +160°C
Lead Temperature (soldering, 10sec) ........................... +300°C
OUT and V+ Continuous Output Current..........................120mA
Output Short-Circuit Duration to GND (Note 1) ....................1sec
Continuous Power Dissipation (T = +70°C)
A
MAX60
Plastic DIP (derate 9.09mW/°C above + 70°C) ............727mW
SO (derate 5.88mW/°C above +70°C)..........................471mW
CERDIP (derate 8.00mW/°C above +70°C)..................640mW
Note 1: OUT may be shorted to GND for 1sec without damage, but shorting OUT to V+ may damage the device and should be
avoided. Also, for temperatures above +85°C, OUT must not be shorted to GND or V+, even instantaneously, or device
damage may result.
Stresses beyond those listed under “Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = 5V, C1 = C2 = 150µF, test circuit of Figure 1, FC = open, T = T
to T , unless otherwise noted.) (Note 2)
MAX
A
MIN
PARAMETER
Inverter, LV = open
MIN
3.0
1.5
2.5
TYP
MAX
5.5
5.5
5.5
0.5
3
UNITS
R
= 1kΩ
Operating Supply Voltage
Inverter, LV = GND
Doubler, LV = OUT
FC = open, LV = open
FC = V+, LV = open
V
L
0.12
1
Supply Current
Output Current
No load
mA
mA
T
A
≤ +85°C, OUT more negative than -4V
100
100
T
A
> +85°C, OUT more negative than -3.8V
T
≤ +85°C, C1 = C2 = 10µF, FC = V+ (Note 4)
≤ +85°C, C1 = C2 = 150µF
≤ +85°C
15
10.0
12
A
T
A
Ω
Output Resistance (Note 3)
I
L
= 100mA
6.5
T
A
FC = open
FC = V+
5
10
80
±1
±8
98
96
88
Oscillator Frequency
OSC Input Current
kHz
µA
40
FC = open
FC = V+
R
R
= 1kΩ connected between V+ and OUT
= 500Ω connected between OUT and GND
96
92
L
L
Power Efficiency
%
%
I
L
= 100mA to GND
Voltage-Conversion
Efficiency
No load
99.00
99.96
Note 2: In the test circuit, capacitors C1 and C2 are 150µF, 0.2Ω maximum ESR, aluminum electrolytics.
Capacitors with higher ESR may reduce output voltage and efficiency. See Capacitor Selection section.
Note 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR. See Capacitor Selection section.
Note 4: The ESR of C1 = C2 ≤ 0.5Ω. Guaranteed by correlation, not production tested.
2
_______________________________________________________________________________________
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
MAX60
__________________________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s
All curves are generated using the test circuit of Figure 1
with V+ =5V, LV = GND, FC = open, and T = +25°C,
A
unless otherwise noted. The charge-pump frequency is
one-half the oscillator frequency. Test results are also
valid for doubler mode with GND = +5V, LV = OUT, and
OUT = 0V, unless otherwise noted; however, the input
voltage is restricted to +2.5V to +5.5V.
I
S
8
7
6
5
1
2
3
V+
(+5V )
V+
V+
OSC
LV
FC
CAP+
GND
CAP-
MAX660
C1
4
OUT
R
L
I
L
V
OUT
C2
Figure 1. MAX660 Test Circuit
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
SUPPLY CURRENT
vs. OSCILLATOR FREQUENCY
OUTPUT VOLTAGE AND EFFICIENCY
vs. LOAD CURRENT, V+ = 5V
400
350
10
-3.0
100
MAX660
ICL7660
-3.4
-3.8
-4.2
-4.6
-5.0
92
84
76
68
60
300
250
LV = OUT
1
EFF.
200
150
V
OUT
LV = GND
0.1
ICL7660
40
100
50
0
LV = OPEN
MAX660
80
0.01
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
0.1
1
10
100
0
20
60
100
OSCILLATOR FREQUENCY (kHz)
LOAD CURRENT (mA)
OUTPUT VOLTAGE DROP
vs. LOAD CURRENT
OUTPUT VOLTAGE
vs. OSCILLATOR FREQUENCY
EFFICIENCY vs. LOAD CURRENT
1.2
1.0
-5.0
-4.5
100
I
= 1mA
V+ = 5.5V
LOAD
V+ = 1.5V
92
84
76
68
60
I
= 10mA
LOAD
V+ = 2.5V
0.8
0.6
0.4
0.2
0
V+ = 3.5V
-4.0
-3.5
-3.0
V+ = 4.5V
V+ = 3.5V
V+ = 4.5V
V+ = 1.5V
I
= 80mA
LOAD
V+ = 2.5V
V+ = 5.5V
0
20
40
60
80
100
0
10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
0.1
1
10
100
LOAD CURRENT (mA)
OSCILLATOR FREQUENCY (kHz)
_________________________________________________________________________________________________
3
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
_____________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s (c o n t in u e d )
OSCILLATOR FREQUENCY
vs. SUPPLY VOLTAGE
EFFICIENCY
vs. OSCILLATOR FREQUENCY
OSCILLATOR FREQUENCY
vs. SUPPLY VOLTAGE
100
96
92
88
84
80
100
12
10
LV = GND
LV = GND
MAX60
80
I
= 1mA
LOAD
LV = OPEN
LV = OPEN
8
6
4
2
0
60
I
= 10mA
LOAD
FC = V+, OSC = OPEN
76
72
FC = OPEN, OSC = OPEN
40
I
= 80mA
LOAD
68
64
60
20
0
0.1
1
10
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
1.5
2.5
3.5
4.5
5.5
5
OSCILLATOR FREQUENCY (kHz)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
OSCILLATOR FREQUENCY
vs. TEMPERATURE
OSCILLATOR FREQUENCY
vs. EXTERNAL CAPACITANCE
OSCILLATOR FREQUENCY
vs. TEMPERATURE
100
10
12
100
80
10
8
FC = V+
FC = V+, OSC = OPEN, RL = 100Ω
60
40
20
0
1
0.1
6
FC = OPEN
4
FC = OPEN, OSC = OPEN
R = 100Ω
L
2
0.01
0
1
10
100
1000
10000
-60 -40 -20
0
20 40 60 80 100 120 140
-60 -40 -20
0
20 40 60 80 100 120 140
CAPACITANCE (pF)
TEMPERATURE (°C)
TEMPERATURE (°C)
OUTPUT SOURCE RESISTANCE
vs. SUPPLY VOLTAGE
OUTPUT SOURCE RESISTANCE
vs. TEMPERATURE
OUTPUT SOURCE RESISTANCE
vs. TEMPERATURE
14
12
30
25
30
25
C1, C2 = 150µF ALUMINUM
C1, C2 = 150µF OS-CON CAPACITORS
10
ELECTROLYTIC
R = 100Ω
L
20
15
10
5
CAPACITORS
20
15
10
5
8
6
4
2
R = 100Ω
L
V+ = 1.5V
V+ = 3.0V
V+ = 1.5V
V+ = 3.0V
V+ = 5.0V
V+ = 5.0V
0
0
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
-60 -40 -20
0
20 40 60 80 100 120 140
-60 -40 -20
0
20 40 60 80 100 120 140
TEMPERATURE (°C)
TEMPERATURE (°C)
4
_______________________________________________________________________________________
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
MAX60
OUTPUT CURRENT vs. CAPACITANCE:
= +4.5V, V = -4V
OUTPUT CURRENT vs. CAPACITANCE:
= +4.5V, V = -3.5V
V
IN
V
IN
OUT
OUT
250
200
150
100
50
120
100
80
60
40
20
0
FC = V+
OSC = OPEN
FC = V+
OSC = OPEN
0
0.33 1.0 2.0 2.2 4.7 10 22 47 100 220
0.33 1.0 2.0 2.2 4.7 10 22 47 100 220
CAPACITANCE (µF)
CAPACITANCE (µF)
OUTPUT CURRENT vs. CAPACITANCE:
OUTPUT CURRENT vs. CAPACITANCE:
V
= +3.0V, V = -2.4V
OUT
V
= +3.0V, V = -2.7V
IN
IN
OUT
60
50
40
30
20
10
0
120
100
80
60
40
20
0
FC = V+
OSC = OPEN
FC = V+
OSC = OPEN
0.33 1.0 2.0 2.2 4.7 10 22 47 100 220
0.33 1.0 2.0 2.2 4.7 10 22 47 100 220
CAPACITANCE (µF)
CAPACITANCE (µF)
______________________________________________________________P in De s c rip t io n
FUNCTION
PIN
NAME
INVERTER
DOUBLER
Frequency Control for internal oscillator, FC = open,
f
= 10kHz typ; FC = V+, f
= 80kHz typ (40kHz min),
Same as Inverter
1
FC
OSC
OSC
FC has no effect when OSC pin is driven externally.
Charge-Pump Capacitor, Positive Terminal
Power-Supply Ground Input
2
3
4
5
CAP+
GND
CAP-
OUT
Same as Inverter
Power-Supply Positive Voltage Input
Same as Inverter
Charge-Pump Capacitor, Negative Terminal
Output, Negative Voltage
Power-Supply Ground Input
Low-Voltage Operation Input. Tie LV to GND when input
voltage is less than 3V. Above 3V, LV may be connected to
GND or left open; when overdriving OSC, LV must be
connected to GND.
LV must be tied to OUT for all input
voltages.
6
LV
Oscillator Control Input. OSC is connected to an internal
15pF capacitor. An external capacitor can be added to slow
the oscillator. Take care to minimize stray capacitance. An
external oscillator may also be connected to overdrive OSC.
Same as Inverter; however, do not over-
drive OSC in voltage-doubling mode.
7
8
OSC
V+
Power-Supply Positive Voltage Input
Positive Voltage Output
_______________________________________________________________________________________
5
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
one-half of the charge-pump cycle. This introduces a
peak-to-peak ripple of:
______________De t a ile d De s c rip t io n
The MAX660 capacitive charge-pump circuit either
inve rts or d oub le s the inp ut volta g e (s e e Typ ic a l
Op e ra ting Circ uits ). For hig he s t p e rforma nc e , low
effective series resistance (ESR) capacitors should be
used. See Capacitor Selection section for more details.
V
RIPPLE
=
I
+ I
OUT
(ESR
)
OUT
C2
2(f
PUMP
) (C2)
For a nominal f
of 5kHz (one-half the nominal
PUMP
10kHz oscillator frequency) and C2 = 150µF with an
ESR of 0.2Ω, rip p le is a p p roxima te ly 90mV with a
100mA load current. If C2 is raised to 390µF, the ripple
drops to 45mV.
When using the inverting mode with a supply voltage
le s s tha n 3V, LV mus t b e c onne c te d to GND. This
bypasses the internal regulator circuitry and provides
best performance in low-voltage applications. When
using the inverter mode with a supply voltage above
3V, LV may be connected to GND or left open. The part
is typically operated with LV grounded, but since LV
may be left open, the substitution of the MAX660 for the
ICL7660 is simplified. LV must be grounded when over-
driving OSC (see Changing Oscillator Frequency sec-
tion). Connect LV to OUT (for any supply voltage) when
using the doubling mode.
MAX60
P o s it ive Vo lt a g e Do u b le r
The MAX660 operates in the voltage-doubling mode as
shown in the Typical Operating Circuit. The no-load
output is 2 x V
.
IN
Ot h e r S w it c h e d -Ca p a c it o r Co n ve rt e rs
Please refer to Table 1, which shows Maxim’s charge-
pump offerings.
__________Ap p lic a t io n s In fo rm a t io n
Ch a n g in g Os c illa t o r Fre q u e n c y
Four modes control the MAX660’s clock frequency, as
listed below:
Ne g a t ive Vo lt a g e Co n ve rt e r
The most common application of the MAX660 is as a
charge-pump voltage inverter. The operating circuit
uses only two external capacitors, C1 and C2 (see
Typical Operating Circuits).
FC
OSC
Oscillator Frequency
10kHz
Open
FC = V+
Open
Open
External
80kHz
Even though its output is not actively regulated, the
MAX660 is very insensitive to load current changes. A
typical output source resistance of 6.5Ω means that
with an input of +5V the output voltage is -5V under
light load, and decreases only to -4.35V with a load of
100mA. Output source resistance vs. temperature and
supply voltage are shown in the Typical Operating
Characteristics graphs.
Open or
FC = V+
See Typical Operating
Capacitor Characteristics
Open
External
Clock
External Clock Frequency
When FC and OSC are unconnected (open), the oscil-
lator runs at 10kHz typically. When FC is connected to
V+, the charge and discharge current at OSC changes
from 1.0µA to 8.0µA, thus inc re a sing the osc illa tor
Output ripple voltage is calculated by noting the output
current supplied is solely from capacitor C2 during
Table 1. Single-Output Charge Pumps
MAX8 2 8
MAX829
MAX860
MAX8 6 1
MAX6 6 0
MAX1 0 4 4
ICL7 6 6 2
ICL7 6 6 0
SO-8,
µMAX
SO-8,
µMAX
SO-8,
µMAX
SO-8,
µMAX
Package
SOT 23-5
SOT 23-5
SO-8
SO-8
0.2 at 6kHz, 0.3 at 13kHz, 0.12 at 5kHz,
0.6 at 50kHz, 1.1 at 100kHz, 1 at 40kHz
1.4 at 130kHz 2.5 at 250kHz
Op. Current
(typ, mA)
0.06
0.15
0.03
0.25
0.08
Output Ω
(typ)
20
12
20
35
12
12
6.5
6.5
5
125
10
55
10
Pump Rate
(kHz)
6, 50, 130
1.5 to 5.5
13, 100, 150
1.5 to 5.5
5, 40
Input (V)
1.25 to 5.5
1.25 to 5.5
1.5 to 5.5
1.5 to 10
1.5 to 10
1.5 to 10
6
_______________________________________________________________________________________
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
MAX60
frequency eight times. In the third mode, the oscillator
fre q ue nc y is lowe re d b y c onne c ting a c a p a c itor
between OSC and GND. FC can still multiply the fre-
quency by eight times in this mode, but for a lower
ra ng e of fre q ue nc ie s (s e e Typ ic a l Op e ra ting
Characteristics).
20
18
16
ESR = 0.25Ω
FOR BOTH
C1 AND C2
14
12
In the inverter mode, OSC may also be overdriven by an
external clock source that swings within 100mV of V+
and GND. Any standard CMOS logic output is suitable
for driving OSC. When OSC is overdriven, FC has no
effect. Also, LV must be grounded when overdriving
OSC. Do not overdrive OSC in voltage-doubling mode.
MAX660 OUTPUT
SOURCE RESISTANCE
ASSUMED TO BE
5.25Ω
10
8
6
4
2
Note: In all modes, the frequency of the signal appear-
ing at CAP+ and CAP- is one-half that of the oscillator.
Also, an undesirable effect of lowering the oscillator fre-
quency is that the effective output resistance of the
charge pump increases. This can be compensated by
increasing the value of the charge-pump capacitors
(see Capacitor Selection section and Typical Operating
Characteristics).
0
1
2
4
6 8 10
100
1000
CAPACITANCE (µF)
Figure 2. Total Output Source Resistance vs. C1 and C2
Capacitance (C1 = C2)
output resistance for various capacitor values (the pump
and reservoir capacitors’ values are equal) and oscillator
frequencies. These curves assume 0.25Ω capacitor ESR
and a 5.25Ω MAX660 output resistance, which is why
In some applications, the 5kHz output ripple frequency
may be low enough to interfere with other circuitry. If
desired, the oscillator frequency can then be increased
through use of the FC pin or an external oscillator as
described above. The output ripple frequency is one-
half the selected oscillator frequency. Increasing the
clock frequency increases the MAX660’s quiescent
current, but also allows smaller capacitance values to
be used for C1 and C2.
the flat portion of the curve shows a 6.5Ω (R MAX660 +
O
4 (ESR ) + ESR ) effective output resistance. Note:
C1
C2
R
= 5.25Ω is us e d , ra the r tha n the typ ic a l 6.5Ω,
O
because the typical specification includes the effect of
the ESRs of the capacitors in the test circuit.
In addition to the curves in Figure 2, four bar graphs in
the Typical Operating Characteristics show output cur-
rent for capacitances ranging from 0.33µF to 220µF.
Output current is plotted for inputs of 4.5V (5V-10%) and
3.0V (3.3V-10%), and allow for 10% and 20% output
droop with each input voltage. As can be seen from the
g ra p hs , the MAX660 6.5Ω s e rie s re s is ta nc e limits
increases in output current vs. capacitance for values
much above 47µF. Larger values may still be useful,
however, to reduce ripple.
________________Ca p a c it o r S e le c t io n
Three factors (in addition to load current) affect the
MAX660 output voltage drop from its ideal value:
1) MAX660 output resistance
2) Pump (C1) and reservoir (C2) capacitor ESRs
3) C1 and C2 capacitance
The voltage drop caused by MAX660 output resistance
is the loa d c urre nt time s the outp ut re s is ta nc e .
Similarly, the loss in C2 is the load current times C2’s
ESR. The loss in C1, however, is larger because it
handles currents that are greater than the load current
during charge-pump operation. The voltage drop due
to C1 is therefore about four times C1’s ESR multiplied
by the load current. Consequently, a low (or high) ESR
capacitor has a much greater impact on performance
for C1 than for C2.
To reduce the output ripple caused by the charge
p ump , inc re a s e the re s e rvoir c a p a c itor C2 a nd /or
reduce its ESR. Also, the reservoir capacitor must have
low ESR if filtering high-frequency noise at the output is
important.
Not all manufacturers guarantee capacitor ESR in the
range required by the MAX660. In general, capacitor ESR
is inversely proportional to physical size, so larger capaci-
tance values and higher voltage ratings tend to reduce
ESR.
Ge ne ra lly, a s the p ump fre q ue nc y of the MAX660
increases, the capacitance values required to maintain
comparable ripple and output resistance diminish pro-
portionately. The curves of Figure 2 show the total circuit
_______________________________________________________________________________________
7
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
The following is a list of manufacturers who provide
low-ESR electrolytic capacitors:
Ca s c a d in g De vic e s
To produce larger negative multiplication of the initial
s up p ly volta g e , the MAX660 ma y b e c a s c a d e d a s
shown in Figure 3. The resulting output resistance is
a p p roxima te ly e q ua l to the s um of the ind ivid ua l
Manufacturer/
Series
Phone
Fax
Comments
Low-ESR
tantalum SMT
MAX660 R
values. The output voltage, where n is
OUT
AVX TPS Series
AVX TAG Series
(803) 946-0690
(803) 946-0690
(803) 626-3123
(803) 626-3123
(714) 960-6492
(603) 224-1430
(619) 661-1055
(619) 661-1055
(847) 843-2798
an integer representing the number of devices cascad-
ed, is defined by V = -n (V ).
MAX60
Low-cost
tantalum SMT
OUT
IN
P a ra lle lin g De vic e s
Low-cost
tantalum SMT
Matsuo 267 Series (714) 969-2491
Paralleling multiple MAX660s reduces the output resis-
tance. As illustrated in Figure 4, each device requires
its own pump capacitor C1, but the reservoir capacitor
C2 s e rve s a ll d e vic e s . The va lue of C2 s hould b e
increased by a factor of n, where n is the number of
devices. Figure 4 shows the equation for calculating
output resistance.
Sprague 595
(603) 224-1961
Series
Aluminum elec-
trolytic thru-hole
Sanyo MV-GX
(619) 661-6835
Series
Aluminum elec-
trolytic SMT
Sanyo CV-GX
(619) 661-6835
Series
Aluminum elec-
trolytic thru-hole
Nichicon PL
(847) 843-7500
Series
Low-ESR
tantalum SMT
United Chemi-Con
(847) 696-2000
(Marcon)
(847) 696-9278 Ceramic SMT
(847) 390-4428 Ceramic SMT
TDK
(847) 390-4373
R
(of MAX660)
OUT
R
OUT
=
n (NUMBER OF DEVICES)
+V
IN
+V
IN
8
8
5
8
8
2
3
4
2
R
L
2
3
4
2
MAX660
3
MAX660
"1"
C1n
5
C1
MAX660
"1"
MAX660
"n"
3
4
"n"
C1n
C1
4
5
5
V
OUT
C2n
V
OUT
= -nV
IN
C2
C2
Figure 3. Cascading MAX660s to Increase Output Voltage
Figure 4. Paralleling MAX660s to Reduce Output Resistance
8
_______________________________________________________________________________________
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
MAX60
Co m b in e d P o s it ive S u p p ly Mu lt ip lic a t io n
1M
1M
a n d Ne g a t ive Vo lt a g e Co n ve rs io n
This dual function is illustrated in Figure 5. In this cir-
c uit, c a pa c itors C1 a nd C3 pe rform the p ump a nd
reservoir functions respectively for generation of the
negative voltage. Capacitors C2 and C4 are respec-
tively pump and reservoir for the multiplied positive
voltage. This circuit configuration, however, leads to
higher source impedances of the generated supplies.
This is due to the finite impedance of the common
charge-pump driver.
OPEN-DRAIN
LOW-BATTERY OUTPUT
3V LITHIUM BATTERY
DURACELL DL123A
LBI
5V/100mA
150µF
3
2
7
1
8
8
IN
OUT
2
MAX667
LBO
DD
MAX660
150
µF
620k
220k
6
4
150µF
1M
6
SET
GND SHDN
5
4
5
+V
IN
8
NOTE: ALL 150µF CAPACITORS ARE MAXC001, AVAILABLE FROM MAXIM.
D1
D1, D2 = 1N4148
V
2
3
MAX660
Figure 6. MAX660 generates a +5V regulated output from a 3V
lithium battery and operates for 16 hours with a 40mA load.
5
6
= -V
IN
OUT
C1
C2
4
D2
V
OUT
= (2V ) -
IN
(V ) - (V
)
FD1
FD2
C4
C3
Figure 5. Combined Positive Multiplier and Negative Converter
_______________________________________________________________________________________
9
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
___________________Ch ip To p o g ra p h y
V+
FC
MAX60
CAP+
0.120"
(3.05mm)
GND
OSC
LV
CAP-
OUT
0.073"
(1.85mm)
TRANSISTOR COUNT = 89
SUBSTRATE CONNECTED TO V+.
10 ______________________________________________________________________________________
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
MAX60
________________________________________________________P a c k a g e In fo rm a t io n
INCHES
MILLIMETERS
DIM
E
MIN
MAX
0.200
–
MIN
–
MAX
5.08
–
A
–
E1
D
A1 0.015
A2 0.125
A3 0.055
0.38
3.18
1.40
0.41
1.14
0.20
0.13
7.62
6.10
2.54
7.62
–
0.175
0.080
0.022
0.065
0.012
0.080
0.325
0.310
–
4.45
2.03
0.56
1.65
0.30
2.03
8.26
7.87
–
A3
A2
A1
A
L
B
0.016
B1 0.045
0.008
D1 0.005
0.300
E1 0.240
0.100
eA 0.300
C
0° - 15°
E
C
e
e
B1
eA
eB
–
–
B
eB
L
–
0.400
0.150
10.16
3.81
0.115
2.92
D1
INCHES
MILLIMETERS
PKG. DIM
PINS
Plastic DIP
PLASTIC
DUAL-IN-LINE
PACKAGE
(0.300 in.)
MIN
MAX MIN
MAX
8
P
P
P
P
P
N
D
D
D
D
D
D
0.348 0.390 8.84
9.91
14
16
18
20
24
0.735 0.765 18.67 19.43
0.745 0.765 18.92 19.43
0.885 0.915 22.48 23.24
1.015 1.045 25.78 26.54
1.14 1.265 28.96 32.13
21-0043A
INCHES
MILLIMETERS
DIM
MIN
0.053
MAX
0.069
0.010
0.019
0.010
0.157
MIN
1.35
0.10
0.35
0.19
3.80
MAX
1.75
0.25
0.49
0.25
4.00
A
D
A1 0.004
B
C
E
e
0.014
0.007
0.150
0°-8°
A
0.101mm
0.004in.
0.050
1.27
e
H
L
0.228
0.016
0.244
0.050
5.80
0.40
6.20
1.27
A1
C
B
L
INCHES
MILLIMETERS
DIM PINS
Narrow SO
SMALL-OUTLINE
PACKAGE
MIN MAX
MIN
MAX
5.00
8.75
8
0.189 0.197 4.80
D
D
D
E
H
14 0.337 0.344 8.55
16 0.386 0.394 9.80 10.00
21-0041A
(0.150 in.)
______________________________________________________________________________________ 11
CMOS Mo n o lit h ic Vo lt a g e Co n ve rt e r
___________________________________________P a c k a g e In fo rm a t io n (c o n t in u e d )
INCHES
MIN
MILLIMETERS
DIM
MAX
0.200
0.023
0.065
0.015
0.310
0.320
MIN
–
MAX
5.08
0.58
1.65
0.38
7.87
8.13
E1
E
A
B
–
0.014
0.36
0.97
0.20
5.59
7.37
D
B1 0.038
A
MAX60
C
E
0.008
0.220
E1 0.290
e
L
0.100
2.54
0.125
0.150
0.015
–
0.200
–
3.18
3.81
0.38
–
5.08
–
0°-15°
C
Q
L1
Q
S
L
L1
0.070
0.098
–
1.78
2.49
–
e
B1
S1 0.005
0.13
B
S1
S
INCHES
MILLIMETERS
DIM PINS
MIN
–
MAX MIN MAX
CERDIP
D
D
D
D
D
D
8
0.405
0.785
0.840
0.960
1.060
1.280
–
–
–
–
–
–
10.29
19.94
21.34
24.38
26.92
CERAMIC DUAL-IN-LINE
PACKAGE
14
16
18
20
24
–
–
–
(0.300 in.)
–
–
32.51
21-0045A
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12 ____________________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600
© 1996 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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