MAX853C/D [MAXIM]

Low-Noise, Regulated, Negative Charge-Pump Power Supplies for GaAsFET Bias; 低噪声,稳压型,负电荷泵电源的GaAsFET偏置
MAX853C/D
型号: MAX853C/D
厂家: MAXIM INTEGRATED PRODUCTS    MAXIM INTEGRATED PRODUCTS
描述:

Low-Noise, Regulated, Negative Charge-Pump Power Supplies for GaAsFET Bias
低噪声,稳压型,负电荷泵电源的GaAsFET偏置

文件: 总8页 (文件大小:120K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
19-0238; Rev 2; 4/96  
Lo w -No is e , Re g u la t e d , Ne g a t ive  
Ch a rg e -P u m p P o w e r S u p p lie s fo r Ga As FET Bia s  
0–MAX853  
_______________Ge n e ra l De s c rip t io n  
The MAX850–MAX853 low-noise, inverting, charge-  
pump power supplies are ideal for biasing GaAsFETs in  
cellular telephone transmitter amplifiers.  
____________________________Fe a t u re s  
Fixed -4.1V or Adjustable -0.5V to -9V Output at 5mA  
4.5V to 10V Input Voltage Range  
2mVp-p Output Voltage Ripple (MAX850–MAX852)  
1mVp-p Output Voltage Ripple (MAX853)  
The MAX850–MAX852 offer both preset (-4.1V) and  
a d jus ta b le (-0.5V to -9.0V) outp ut volta g e s . The  
MAX853 uses an external positive control voltage to set  
the negative output voltage. Input voltage range for all  
four devices is 4.5V to 10V. Output current is 5mA.  
100kHz Charge-Pump Switching Frequency  
(MAX850/MAX851/MAX853)  
External Synchronizing Clock Input (MAX852)  
An internal linear regulator reduces the output voltage  
ripple to 2mVp-p. With a well-filtered control voltage  
Logic-Level Shutdown Mode: 1µA Max Over  
Temperature (MAX850/MAX852/MAX853)  
(V  
), the MAX853 achieves typical output ripple of  
CTRL  
Low Cost, 8-Pin SO Package  
less than 1mVp-p. Supply current is 3mA max, and  
shutdown current is less than 1µA max over temperature  
(5µA max for MAX851).  
______________Ord e rin g In fo rm a t io n  
PART  
TEMP. RANGE  
0°C to +70°C  
PIN-PACKAGE  
Dice*  
8 SO  
MAX850C/D  
MAX850ISA  
MAX850ESA  
MAX851C/D  
MAX851ISA  
MAX851ESA  
MAX852C/D  
MAX852ISA  
MAX852ESA  
MAX853C/D  
MAX853ISA  
MAX853ESA  
________________________Ap p lic a t io n s  
Cellular Phones  
-25°C to +85°C  
-40°C to +850°C  
0°C to +70°C  
8 SO  
Negative Regulated Power Supplies  
Personal Communicators, PDAs  
Wireless Data Loggers  
Dice*  
8 SO  
-25°C to +85°C  
-40°C to +85°C  
0°C to +70°C  
8 SO  
Dice*  
8 SO  
Continuously Adjustable GaAsFET Bias  
LCD-Bias Contrast Control  
-25°C to +85°C  
-40°C to +85°C  
0°C to +70°C  
8 SO  
Dice*  
8 SO  
8 SO  
-25°C to +85°C  
-40°C to +85°C  
__________Typ ic a l Op e ra t in g Circ u it  
°
* Dice are specified at T = +25 C only.  
A
V
IN  
= 4.5V to 10.0V  
(4 CELLS)  
C3  
__________________P in Co n fig u ra t io n  
IN  
C1+  
C1-  
V
= -4.1V  
OUT  
TOP VIEW  
C1  
C2  
(V of GaAsFET)  
GG  
MAX850  
MAX851  
MAX852  
OUT  
C4  
C1+  
C1-  
IN  
1
2
3
4
8
7
6
5
NEGOUT  
GND  
OUT  
MAX850  
MAX851  
MAX852  
MAX853  
NEGOUT  
SHDN*  
SHDN  
OSC  
FB  
FB**  
SHDN*  
(MAX850–852)  
(MAX850/853)  
GND  
SO  
* MAX850: SHDN  
MAX851: SHDN  
MAX852: OSC  
* SHDN (MAX851)  
OSC (MAX852)  
** CONT (MAX853)  
________________________________________________________________ Maxim Integrated Products  
1
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800  
Lo w -No is e , Re g u la t e d , Ne g a t ive  
Ch a rg e -P u m p P o w e r S u p p lie s fo r Ga As FET Bia s  
ABSOLUTE MAXIMUM RATINGS  
Supply Voltage, V to GND ..................................-0.3V to 10.5V  
Operating Temperature Ranges  
IN  
V
to GND...................................................-10.5V to 0.3V  
MAX85_ISA......................................................-25°C to +85°C  
MAX85_ESA.....................................................-40°C to +85°C  
Storage Temperature Range .............................-65°C to +160°C  
Lead Temperature (soldering, 10sec) .............................+300°C  
NEGOUT  
V
V
.........................................................-0.3V to 21V  
IN to NEGOUT  
VOUT to GND (Note 1) ........................................V  
SHDN or OSC (pin 4) Voltage to GND.........-0.3V to (V + 0.3V)  
to 0.3V  
NEGOUT  
IN  
Continuous Power Dissipation (T = +70°C)  
A
SO (derate 5.88mW/°C above +70°C) ........................471mW  
Note 1: The output may be shorted to NEGOUT or GND if the package power dissipation is not exceeded. Typical short-circuit  
current to GND is 50mA.  
Stresses beyond those listed under Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional  
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability.  
ELECTRICAL CHARACTERISTICS  
(+5V V +10V, GND = 0V, V  
= -4.1V, R = , T = T  
to T , unless otherwise noted. A 100kHz, 50% duty cycle square  
MAX  
IN  
OUT  
L
A
MIN  
0–MAX853  
wave between GND and V is applied to OSC on the MAX852.)  
IN  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Supply Voltage Range (Note 2)  
V
IN  
5
10  
V
MAX850–MAX852, V = 0V,  
FB  
-4.3  
-4.2  
-4.1  
-3.9  
-4.0  
R
= or 820, Figure 2a  
L
Output Voltage  
V
OUT  
V
MAX853, V  
= 4.1V,  
CTRL  
R
= or 820, Figure 2c  
L
Output Voltage Range  
Set Voltage  
-0.5 to -(V - 1)  
V
V
IN  
V
MAX850–MAX852, no load, Figure 2b  
-1.32  
-1.28  
2.0  
-1.24  
FBset  
Supply Current  
I
Q
3.0  
1
mA  
MAX850/MAX853, V = 10V, SHDN = 0V  
IN  
0.002  
2
Shutdown Supply Current  
I
MAX851, SHDN = 2V  
MAX852, OSC low  
5
µA  
SHUT  
1
MAX850–MAX852, V = 0V,  
FB  
4
3
8
8
R
= or 820, Figure 2a  
L
V
Load Regulation  
Ripple  
mV/mA  
mVp-p  
OUT  
MAX853, V  
= 4.1V,  
CTRL  
R
= or 820, Figure 2c  
L
MAX850–MAX852  
MAX853  
2
1
V
OUT  
Oscillator Frequency (Note 3)  
Input High Voltage  
Input Low Voltage  
Input Current  
f
MAX850/MAX851/MAX853, T = +25°C  
A
80  
100  
120  
kHz  
V
OSC  
V
Pin 4  
Pin 4  
Pin 4  
Pin 4  
2.0  
IH  
V
IL  
0.5  
±1  
V
I
IN  
µA  
pF  
Input Capacitance  
C
10  
IN  
Note 2: The supply voltage can drop to 4.5V, but the output may no longer sink 5mA at -4.1V.  
Note 3: The MAX852 will operate with a 50kHz to 250kHz square wave of 40% to 60% duty cycle. For best performance, use an  
80kHz to 120kHz square wave with 50% duty cycle.  
2
_____________________________________________________________________________________  
Lo w -No is e , Re g u la t e d , Ne g a t ive  
Ch a rg e -P u m p P o w e r S u p p lie s fo r Ga As FET Bia s  
0–MAX853  
__________________________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s  
(Circuit of Figure 2a, V = 6V, T = +25°C, unless otherwise noted.)  
IN  
A
OUTPUT VOLTAGE vs.  
INPUT VOLTAGE OVER TEMPERATURE  
OUTPUT VOLTAGE  
vs. OUTPUT CURRENT  
MAXIMUM OUTPUT CURRENT  
vs. INPUT VOLTAGE  
60  
50  
-4.13  
-4.12  
-4.11  
-4.10  
-4.16  
-4.15  
I
= 2.5mA  
OUT  
T
= +25°C  
A
-4.14  
-4.13  
-4.12  
40  
30  
20  
10  
T
A
= -40°C  
-4.09  
-4.08  
-4.07  
-4.06  
T
= +85°C  
A
-4.11  
-4.10  
6.0  
7.0  
8.0  
9.0  
10.0  
5.0  
2.0  
4.0  
6.0  
8.0  
10.0  
0
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
INPUT VOLTAGE (V)  
OUTPUT CURRENT (mA)  
INPUT VOLTAGE (V)  
SUPPLY CURRENT  
vs. TEMPERATURE  
NO-LOAD SUPPLY CURRENT  
vs. INPUT VOLTAGE  
START-UP TIME vs.  
INPUT VOLTAGE  
2.00  
1.80  
1.60  
2.00  
1.80  
1.60  
1.40  
2.5  
2.4  
I
= 5mA  
V
IN  
= 10.0V  
OUT  
2.3  
2.2  
1.40  
1.20  
1.00  
0.80  
0.60  
2.1  
2.0  
1.9  
1.20  
1.00  
1.8  
1.7  
1.6  
0.80  
0.60  
0.40  
0.20  
-40 -20  
0
20  
40  
60  
80 100  
5.0  
6.0  
7.0  
8.0  
9.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
10.0  
TEMPERATURE (°C)  
INPUT VOLTAGE (V)  
INPUT VOLTAGE (V)  
EFFICIENCY vs. LOAD CURRENT  
= 5.0V  
80  
70  
V
IN  
V
IN  
= 6.0V  
60  
50  
40  
30  
V
IN  
= 10.0V  
20  
10  
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
LOAD CURRENT (mA)  
_______________________________________________________________________________________  
3
Lo w -No is e , Re g u la t e d , Ne g a t ive  
Ch a rg e -P u m p P o w e r S u p p lie s fo r Ga As FET Bia s  
_____________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s (c o n t in u e d )  
(Circuit of Figure 2a, V = 6V, T = +25°C, unless otherwise noted.)  
IN  
A
MAX850–MAX852  
MAX853  
OUTPUT NOISE AND RIPPLE  
OUTPUT NOISE AND RIPPLE  
V
OUT  
V
OUT  
500µV/div  
500µV/div  
0–MAX853  
10µs/div  
10µs/div  
V
IN  
= 6.0V, V = -4.1V, I = 5mA, AC COUPLED  
V = 6.0V, V = -4.1V, I = 5mA, AC COUPLED  
IN OUT OUT  
OUT  
OUT  
MAX853  
NOISE SPECTRUM  
MAX850–MAX852  
NOISE SPECTRUM  
70  
70  
60  
50  
40  
30  
60  
50  
40  
30  
20  
10  
20  
10  
0
0
-10  
-10  
-20  
-30  
-20  
-30  
0.1  
1.0  
10  
100  
1000  
0.1  
1.0  
10  
100  
1000  
FREQUENCY (kHz)  
FREQUENCY (kHz)  
NOTE: dBµV = 20 log V  
OUT  
1µV  
4
______________________________________________________________________________________  
Lo w -No is e , Re g u la t e d , Ne g a t ive  
Ch a rg e -P u m p P o w e r S u p p lie s fo r Ga As FET Bia s  
0–MAX853  
_____________________________Typ ic a l Op e ra t in g Ch a ra c t e ris t ic s (c o n t in u e d )  
(Circuit of Figure 2a, V = 6V, T = +25°C, unless otherwise noted.)  
IN  
A
MAX850/MAX851/MAX853  
START-UP FROM SHUTDOWN  
MAX852  
START-UP FROM SHUTDOWN  
V
OUT  
2V/div  
V
OUT  
2V/div  
V
5V/div  
OSC  
V
5V/div  
SHDN  
200µs/div  
200µs/div  
CIRCUIT OF FIGURE 2a, V = 6.0V, V = -4.1V, I = 5mA  
CIRCUIT OF FIGURE 2a, V = 6.0V, V = -4.1V, I = 5mA  
IN OUT OUT  
IN  
OUT  
OUT  
SHUTDOWN OCCURS WHEN 100kHz EXTERNAL CLOCK IS GATED OFF  
LINE-TRANSIENT RESPONSE  
LOAD-TRANSIENT RESPONSE  
0.01mA  
5mA  
I
OUT  
V
OUT  
20mV/div  
V
OUT  
6.0V  
5.5V  
V
IN  
50mV/div  
2ms/div  
1ms/div  
= -4.0V, AC COUPLED  
V
OUT  
= -4.08V, I = 5mA, AC COUPLED  
OUT  
V
OUT  
_______________________________________________________________________________________  
5
Lo w -No is e , Re g u la t e d , Ne g a t ive  
Ch a rg e -P u m p P o w e r S u p p lie s fo r Ga As FET Bia s  
______________________________________________________________P in De s c rip t io n  
PIN  
NAME  
FUNCTION  
MAX850 MAX851 MAX852 MAX853  
1
2
3
4
1
2
3
4
1
2
3
4
1
2
3
4
C1+  
C1-  
Positive terminal for C1  
Negative terminal for C1  
NEGOUT Negative Output Voltage (unregulated), V  
= V + 0.2V  
IN  
NEGOUT  
SHDN  
SHDN  
OSC  
Active-low TTL logic level Shutdown Input  
Active-high TTL logic level Shutdown Input  
External Clock Input  
Dual-Mode Feedback Input. When FB is grounded, the output is preset to  
-4.1V. To select other output voltages, connect FB to an external resistor  
divider. See Figure 2b.  
5
5
5
FB  
Control Voltage Input. To set V  
OUT and a positive control voltage between 0V and 10V. See Figure 2c.  
, connect a resistor divider between  
OUT  
5
CONT  
0–MAX853  
6
7
8
6
7
8
6
7
8
6
7
8
OUT  
GND  
IN  
Output Voltage  
Ground  
Positive Power-Supply Input (4.5V to 10V)  
ear regulator, and appears at OUT (Figure 1). The mini-  
_______________De t a ile d De s c rip t io n  
mum (most negative) output voltage (V ) achievable  
OUT  
The MAX850–MAX853 are low-noise, inverting, regulat-  
ed charge-pump power supplies designed for biasing  
GaAsFET devices, such as power-amplifier modules in  
cellular handsets.  
is the inverted positive voltage, plus the 1.0V required  
by the post-regulator. The ripple noise induced by the  
charge-pump inverter is reduced by the linear regulator  
to 2mVp-p at V  
for the MAX850–MAX852. In addi-  
OUT  
The applied input voltage (V ) is first inverted to a  
IN  
negative voltage at NEGOUT by a capacitive charge  
pump. This voltage is then regulated by an internal lin-  
tion, the excellent AC rejection of the linear regulator  
attenuates noise on the incoming supply. Up to 5mA is  
available at OUT.  
C1+  
C1-  
IN  
CHARGE  
PUMP  
C1+  
C1-  
IN  
CHARGE  
PUMP  
MAX850  
MAX851  
MAX852  
NEGOUT  
OUT  
FB  
MAX853  
N
NEGOUT  
OUT  
N
SHDN (MAX850)  
SHDN (MAX851)  
OSC (MAX852)  
CONNECT TO  
GND TO SET  
= -4.1V  
SHDN  
V
OUT  
-1.28V  
REF  
CONT  
CONTROL  
VOLTAGE  
GND  
GND  
Figure 1b. MAX853 Block Diagram  
______________________________________________________________________________________  
Figure 1a. MAX850–MAX852 Block Diagram  
6
Lo w -No is e , Re g u la t e d , Ne g a t ive  
Ch a rg e -P u m p P o w e r S u p p lie s fo r Ga As FET Bia s  
0–MAX853  
__________Ap p lic a t io n s In fo rm a t io n  
V
IN  
S e t t in g t h e Ou t p u t Vo lt a g e  
For the MAX850–MAX852, select either a fixed or an  
adjustable output voltage. Connect FB directly to GND to  
select the fixed -4.1V output (Figure 2a). To select an alter-  
nate output voltage, connect FB to the midpoint of a resis-  
C3  
1µF  
IN  
C1+  
C1-  
C1  
1µF  
V
OUT  
= -0.5V to -9V @ 5mA  
OUT  
MAX853  
C4  
10µF  
tor voltage divider from OUT to GND (Figure 2b). V must  
IN  
NEGOUT  
R2  
100k  
C2  
1µF  
be 1.0V above the absolute value of V  
to allow proper  
OUT  
regulation. The output voltage is calculated from the formu-  
la below. Choose R2 to be between 100kto 400k.  
SHDN  
CONT  
R1  
100k  
R2  
GND  
V
= -1.28 1+  
(
)
OUT  
R1  
V
CTRL  
(0V TO 10V)  
V
IN  
Figure 2c. MAX853 Standard Application Circuit  
C3  
1µF  
For the MAX853, set the output voltage, VOUT, by con-  
necting a resistor voltage divider between OUT and a  
IN  
C1+  
C1  
V
= -4.1V  
OUT  
positive control voltage, V  
(Figure 2c.)  
CTRL  
1µF  
(V of GaAsFET)  
GG  
MAX850  
MAX851  
MAX852  
C1-  
OUT  
FB  
C4  
10µF  
R2  
V
= - V  
CTRL  
OUT  
NEGOUT  
R1  
C2  
1µF  
Shutdow n  
The MAX850–MAX853 feature a shutdown mode that  
reduces the supply current to 1µA max over temperature  
(5µA max for the MAX851). The MAX850 and MAX853 have  
an active-low TTL logic level SHDN input, whereas the  
MAX851 has an active-high SHDN input. To shut down the  
MAX852, set the OCSC input to a logic-low level. The device  
is powered up by the resumption of the clock signal.  
SHDN*  
SHDN  
OSC  
GND  
*MAX850: SHDN  
MAX851: SHDN  
MAX852: OSC  
Figure 2a. MAX850/MAX851/MAX852 Standard Application Circuit  
Ca p a c it o rs  
Use capacitors with low effective series resistance (ESR) to  
V
IN  
maintain a low dropout voltage (V - V  
). The overall  
IN | OUT|  
C3  
dropout voltage is a function of the charge pumps output  
resistance and the voltage drop across the linear regulator  
(N-channel pass transistor). At the 100kHz switching fre-  
quency, the charge-pump output resistance is a function of  
C1 and C2s ESR. Therefore, minimizing the ESR of the  
charge-pump capacitors minimizes the dropout voltage.  
1µF, 0.8ESR capacitors are recommended for C1, C2,  
and C3. C4 should be 10µF, 0.2ESR. All capacitors  
should be either surface-mount chip tantalum or chip  
ceramic types. External capacitor values may be adjusted to  
optimize size and cost.  
IN  
1µF  
C1+  
C1-  
C1  
1µF  
R2  
R1  
V
OUT  
= (-1.28V) 1+  
(
)
MAX850  
MAX851  
MAX852  
OUT  
FB  
C4  
10µF  
NEGOUT  
R2  
100k  
C2  
1µF  
SHDN*  
SHDN  
OSC  
R1  
100k  
GND  
S w it c h in g -Fre q u e n c y Co n t ro l  
Use the MAX852 to minimize system interference caused by  
conflicting clock frequencies. An external oscillator can set  
the charge-pump frequency and reduce clock frequency  
*MAX850: SHDN  
MAX851: SHDN  
MAX852: OSC  
Figure 2b. MAX850/MAX851/MAX852 Adjustable Configuration  
_______________________________________________________________________________________  
7
Lo w -No is e , Re g u la t e d , Ne g a t ive  
Ch a rg e -P u m p P o w e r S u p p lie s fo r Ga As FET Bia s  
sensitivity and interference. The clock must be a square wave  
between 40% and 60% duty cycle. The maximum clock fre-  
quency is 250kHz, and the minimum frequency is 50kHz.  
___________________Ch ip To p o g ra p h y  
IN  
C1+  
La yo u t a n d Gro u n d in g  
Good layout is important, primarily for good noise perfor-  
mance.  
1) Mount all components as close together as possible.  
C1-  
GND  
OUT  
2) Keep traces short to minimize parasitic inductance  
and capacitance. This includes connections to FB.  
0. 127"  
(3. 226mm)  
NEGOUT  
3) Use a ground plane.  
No is e a n d Rip p le Me a s u re m e n t  
Accurately measuring the output noise and ripple is a chal-  
lenge. Brief differences in ground potential between the  
MAX850–MAX853 circuit and the oscilloscope (which result  
from the charge pumps switching action) cause ground  
currents in the probes wires, inducing sharp voltage spikes.  
For best results, measure directly across the output capaci-  
tor (C4). Do not use the ground lead of the oscilloscope  
probe; instead, remove the probes tip cover and touch the  
ground ring on the probe directly to C4s ground terminal.  
You can also use a Tektronix chassis mount test jack (part  
no. 131-0258) to connect your scope probe directly. This  
direct connection gives the most accurate noise and rip-  
ple measurement.  
FB (MAX850–852)  
CONT (MAX853)  
0–MAX853  
SHDN (MAX850/853)  
SHDN (MAX851)  
OSC (MAX852)  
0. 085"  
(2. 159mm)  
TRANSISTOR COUNT: 164  
SUBSTRATE CONNECTED TO IN  
________________________________________________________P a c k a g e In fo rm a t io n  
INCHES  
MILLIMETERS  
DIM  
MIN  
0.053  
MAX  
0.069  
0.010  
0.019  
0.010  
0.197  
0.157  
MIN  
1.35  
0.10  
0.35  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.49  
0.25  
5.00  
4.00  
A
A1 0.004  
B
C
D
E
e
0.014  
0.007  
0.189  
0.150  
E
H
0.050 BSC  
1.27 BSC  
H
h
0.228  
0.010  
0.016  
0˚  
0.244  
0.020  
0.050  
8˚  
5.80  
0.25  
0.40  
0˚  
6.20  
0.50  
1.27  
L
α
8˚  
21-325A  
h x 45˚  
D
α
A
0.127mm  
0.004in.  
8-PIN PLASTIC  
SMALL-OUTLINE  
PACKAGE  
e
A1  
C
L
B
8
______________________________________________________________________________________  

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