79C0408RTFE-15_技术文档

79C0408

4 Megabit (512k x 8-bit)

EEPROM MCM

CE

3

CE

1

2

4

RES

R/ B

WE

OE

A_0-16

128Kx 8

I/O

0-7

FEATURES:

DESCRIPTION:

•

Four 128k x 8-bit EEPROMs MCM

R^AD-PAK® radiation-hardened against natural space radia-

tion

Total dose hardness (RP Package):

- > 100 krad (Si)

- Dependent upon orbit

Excellent Single Event Effects

- SEL > 120 MeV/mg/cm²

- SEU > 90 MeV/mg/cm²read mode

- SEU = 18 MeV/mg/cm²write mode

Packages:

-40 pin R^AD-PAK® flat pack

-40 pin X-R^AYPAK^TMflat pack

-40 pin Rad-Tolerant flat pack

High speed:

Maxwell Technologies’ 79C0408 multi-chip module (MCM)

memory features a greater than 100 krad (Si) total dose toler-

ance, dependent upon orbit. Using Maxwell Technologies’ pat-

ented radiation-hardened R^AD-PAK® MCM packaging

technology, the 79C0408 is the first radiation-hardened 4

Megabit MCM EEPROM for space applications. The 79C0408

uses four 1 Megabit high-speed CMOS die to yield a 4 Mega-

bit product. The 79C0408 is capable of in-system electrical

Byte and Page programmability. It has a 128 bytes Page Pro-

gramming function to make its erase and write operations

faster. It also features Data Polling and a Ready/Busy signal to

indicate the completion of erase and programming operations.

In the 79C0408, hardware data protection is provided with the

RES pin, in addition to noise protection on the WE signal and

write inhibit on power on and off. Software data protection is

implemented using the JEDEC optional standard algorithm.

•

- 120, 150, and 200 ns maximum access times

available

•

Data Polling and Ready/Busy signal

Software data protection

Write protection by RES pin

High endurance

- 10,000 erase/write (in Page Mode), 10 year data reten-

tion

Page write mode: 1 to 128 byte page

Low power dissipation

Maxwell Technologies' patented R^AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R^AD-PAK provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to Class K.

•

- 88 mW/MHz active mode

- 440 µW standby mode

1

All data sheets are subject to change without notice

08.15.02 REV 12

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

TABLE 1. 79C0408 PIN DESCRIPTION

SYMBOL

DESCRIPTION

16-9, 32-31,

28, 30, 8, 33,

7, 36, 6

A0 to A16

Address Input

17-19, 22-26

I/O0 to I/O7

OE

Data Input/Output

Output Enable

Chip Enable 1 through 4

Write Enable

Power Supply

Ground

29

2, 3, 39, 38

34

CE1-4

WE

1, 27, 40

4, 20, 21, 37

5

VCC

VSS

RDY/BUSY

RES

Ready/Busy

35

Reset

TABLE 2. 79C0408 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

MIN

MAX

UNIT

Supply Voltage

V_CC

V_IN

-0.6

-0.5¹

-55

7.0

V

^°C

Input Voltage

Operating Temperature Range

Storage Temperature Range

T_OPR

T_STG

125

150

-65

1. V_INMIN = -3.0V FOR PULSE WIDTH <50NS.

TABLE 3. 79C0408 RECOMMENDED OPERATING CONDITIONS

PARAMETER

SUBGROUPS

SYMBOL

MIN

MAX

UNIT

Supply Voltage

Input Voltage

1

V_CC

4.5

-0.3¹

2.2

5.5

0.8

V_CC+0.3

V

V_IL

V_IH

V_H

V

RES_PIN

V

_CC-0.5

V

_CC+1

Case Operating Temperature

1

T_C

-55

125

^°C

1. V_ILmin = -1.0V for pulse width < 50 ns

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8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

1

TABLE 4. 79C0408 CAPACITANCE

(T_A= 25 ^°C, f = 1 MHz)

P^ARAMETER

SYMBOL

MIN

MAX

UNIT

Input Capacitance: V_IN= 0 V ²

C_IN

pf

WE

CE_1-4

OE

--

24

6

24

A_0-16

Output Capacitance: V_OUT= 0 V ²

C_OUT

48

pF

1. Guaranteed by design.

2. Guaranteed by design.

TABLE 5. 79C0408 DC ELECTRICAL CHARACTERISTICS

(V_CC= 5V ±10%, T_A= -55 TO +125°C)

P^ARAMETER

TEST CONDITION

SUBGROUPS

SYMBOL

MIN

MAX

UNITS

Input Leakage Current

V_CC= 5.5V, V_IN= 5.5V¹

1, 2, 3

I_IL

µA

CE_1-4

--

2 ¹

4

OE, WE_1-4

A_0-16

4

Output Leakage Current

Standby V_CCCurrent²

V

_CC= 5.5V, V_OUT= 5.5V/0.4V

I_LO

2

µA

mA

CE = V_CC

CE = V_IH

I_CC1

I_CC2

I_CC3

20

1

Operating V_CCCurrent

I_OUT= 0mA, Duty = 100%

Cycle = 1µs at V_CC= 5.5V

15

I_OUT= 0mA, Duty = 100%

1, 2, 3

--

50

Cycle = 150ns at V_CC= 5.5V

Input Voltage

1, 2, 3

V_IL

V_IH

V_H

--

2.2

0.8

--

V

RES_PIN

V_CC-0.5

--

Output Voltage

I

_OL= 2.1 mA

V_OL

V_OH

0.4

--

I

_OH= -0.4 mA

2.4

1. I_LIon RES = 100 uA max.

2. One CE active.

All data sheets are subject to change without notice

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8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

1

TABLE 6. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS

(V_CC= 5V ±10%, T_A= -55 TO +125°C)

P^ARAMETER

SUBGROUPS

SYMBOL

MIN

MAX

UNIT

Address Access Time CE = OE = V_IL, WE = V_IH

9, 10, 11

t_ACC

ns

-120

-150

-200

--

120

150

200

Chip Enable Access Time OE = V_IL, WE = V_IH

9, 10, 11

t_CE

t_OE

t_OH

ns

-120

-150

-200

--

120

150

200

Output Enable Access Time CE = V_IL, WE = V_IH

-120

-150

-200

0

75

125

Output Hold to Address Change CE = OE = V_IL, WE = V_IH

-120

-150

-200

0

--

Output Disable to High-Z²

CE = V_IL, WE = V_IH

-120

-150

-200

9, 10, 11

t_DF

ns

0

50

60

CE = OE = V_IL, WE = V_IH

t_DFR

-120

-150

-200

0

300

350

450

3

RES to Output Delay CE = OE = V_IL, _WE= V_IH

t_RR

ns

-120

-150

-200

--

400

450

650

1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including

scope and jig); reference levels for measuring timing - 0.8V/1.8V.

2. t_DFand t_DFRare defined as the time at which the output becomes an open circuit and data is no longer driven.

3. Guaranteed by design.

All data sheets are subject to change without notice

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8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

TABLE 7. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS

(V_CC= 5V ±10%, T_A= -55 TO +125°C)

1

P^ARAMETER

SUBGROUPS

SYMBOL

MAX

UNIT

MIN

Address Setup Time

9, 10, 11

t_AS

ns

-120

-150

-200

0

--

Chip Enable to Write Setup Time (WE Controlled)

9, 10, 11

t_CS

ns

-120

-150

-200

0

--

Write Pulse Width

CE Controlled

-120

-150

-200

t_CW

200

250

350

--

WE Controlled

-120

-150

t_WP

200

250

350

--

-200

Address Hold Time

9, 10, 11

t_AH

t_DS

t_DH

t_CH

t_WS

t_WH

ns

-120

-150

-200

150

200

--

Data Setup Time

-120

-150

-200

75

100

150

--

Data Hold Time

-120

-150

-200

10

20

--

Chip Enable Hold Time (WE Controlled)

-120

-150

-200

0

--

Write Enable to Write Setup Time (CE Controlled)

-120

-150

-200

0

--

Write Enable Hold Time (CE Controlled)

-120

-150

-200

0

--

All data sheets are subject to change without notice

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8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

TABLE 7. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS

(V_CC= 5V ±10%, T_A= -55 TO +125°C)

1

P^ARAMETER

SUBGROUPS

SYMBOL

MAX

UNIT

MIN

Output Enable to Write Setup Time

9, 10, 11

t_OES

ns

-120

-150

-200

0

--

Output Enable Hold Time

9, 10, 11

t_OEH

t_WC

t_DL

ns

ms

ns

-120

-150

-200

0

--

Write Cycle Time²

-120

-150

-200

--

10

Data Latch Time

-120

-150

-200

250

300

400

--

Byte Load Window

t_BL

µs

ns

-120

-150

-200

100

200

--

Byte Load Cycle

t_BLC

-120

-150

-200

0.55

0.95

30

Time to Device Busy

t_DB

-120

-150

-200

100

120

170

--

Write Start Time³

t_DW

ns

-120

-150

-200

150

250

--

RES to Write Setup Time

t_RP

µs

-120

-150

-200

100

200

--

V

_CCto RES Setup Time⁴

t_RES

-120

-150

-200

1

3

--

1. Use this divice in a longer cycle than this value.

2. t_WCmust be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the

internal write operation within this value.

All data sheets are subject to change without notice

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8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

3. Next read or write operation can be initiated after t_DWif polling techniques or RDY/BUSY are used.

4. Gauranteed by design.

1, 2

TABLE 8. 79C0408 MODE SELECTION

CE ³

P^ARAMETER

OE

WE

I/O

RES

RDY/BUSY

Read

V_IL

V_IH

V_IL

X

V_IL

X

V_IH

X

D_OUT

V_H

X

High-Z

High-Z --> V_OL

High-Z

--

Standby

Write

High-Z

V_IH

X

V_IL

V_IH

X

D_IN

V_H

X

Deselect

Write Inhibit

High-Z

--

X

V_IL

X

--

Data Polling

Program

V_IL

X

V_IH

X

Data Out (I/O7)

High-Z

V_H

V_IL

V_OL

High-Z

1. X = Don’t care.

2. Refer to the recommended DC operating conditions.

3. For CE_1-4only one CE can be used (“on”) at a time.

FIGURE 1. READ TIMING WAVEFORM

All data sheets are subject to change without notice

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79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)

All data sheets are subject to change without notice

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79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)

All data sheets are subject to change without notice

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79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)

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79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)

FIGURE 6. DATA POLLING TIMING WAVEFORM

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79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)

F^IGURE8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)

Toggle Bit Waveform

EEPROM APPLICATION NOTES

This application note describes the programming procedures for each EEPROM module (four in each MCM) and

details of various techniques to preserve data protection.

Automatic Page Write

Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and

allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading

the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte

of data can be loaded within 30 µs. In case CE and WE are kept high for 100 µs after data input, the EEPROM enters

erase and write mode automatically and only the input data are written into the EEPROM.

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8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

WE CE Pin Operation

During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of

WE or CE.

Data Polling

Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a

write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is per-

forming a write operation.

RDY/Busy Signal

RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal

has high impedance except in write cycle and is lowered to V_OLafter the first write signal. At the-end of a write cycle,

the RDY/Busy signal changes state to high impedance.

RES Signal

When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping

RES low when V_CCis switched. RES should be kept high during read and programming because it doesn’t provide a

latch function.

Data Protection

To protect the data during operation and power on/off, the EEPROM has the internal functions described below.

1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.

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79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-

take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in

programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.

2. Data Protection at V_CCon/off

When V_CCis turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to

programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable

state during V_CCon/off by using a CPU reset signal to RES pin.

RES should be kept at V_SSlevel when V_CCis turned on or off. The EEPROM breaks off programming operation when RES

becomes low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES

should be kept high for 10 ms after the last data input.

3. Software Data Protection

The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.

In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non-

protection mode to the protection mode.

All data sheets are subject to change without notice 14

8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec-

tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.

All data sheets are subject to change without notice 15

8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

Pin #1 ID

79C0408 RAD-PAK® PACKAGE DIMENSIONS

DIMENSION

SYMBOL

MIN

NOM

MAX

A

b

c

D

E

E1

E2

E3

e

0.248

0.013

0.006

--

0.985

--

0.274

0.015

0.008

0.850

0.995

--

0.300

0.022

0.010

0.860

1.005

1.025

--

0.890

0.000

0.895

0.050

0.040 BSC

0.390

0.245

0.038

40

--

L

0.380

0.214

0.005

0.400

0.270

--

Q

S1

N

F40-01

Note: All dimensions in inche

All data sheets are subject to change without notice 16

8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

PIN 1

MAXWELL

TECHNOLGIES

XXXXXXXXXXX

D

X-RAY-PAK

YYYY USA

e

b

S1

E

c

A

E3

E2

L

Q

TABLE 9. X-RAY PAK PACKAGE DIMENSIONS

SYMBOL

DIMENSIONS

0.274

A

b

c

D

E

E2

E3

e

0.248

0.013

0.006

0.840

0.985

--

0.300

0.022

0.010

0.860

1.005

--

0.015

0.008

0.850

0.995

0.785

0.105

0.040 bsc

0.350

0.065

--

L

0.340

0.050

--

0.400

0.075

--

Q

S1

N

0.038

40

NOTE: ALL DIMENSIONS IN INCHES

All data sheets are subject to change without notice 17

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79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

Pin #1 ID

TABLE 10. 40 PIN FLAT RAD-TOLERANT PACKAGE

SYMBOL

DIMENSION

NOM

0.224

0.015

0.008

0.850

0.995

--

0.895

0.050

0.040 BSC

0.390

0.220

0.038

40

MIN

0.202

0.013

0.006

--

0.985

--

0.890

0.000

MAX

0.246

0.022

0.010

0.860

1.005

1.025

--

A

b

c

D

E

E1

E2

E3

e

--

L

0.380

0.190

0.000

0.400

0.270

--

Q

S1

N

F40-02

NOTE: ALL DIMENSIONS IN INCHES

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79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

Important Notice:

These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies

functionality by testing key parameters either by 100% testing, sample testing or characterization.

The specifications presented within these data sheets represent the latest and most accurate information available to

date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no

responsibility for the use of this information.

Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems

without express written approval from Maxwell Technologies.

Any claim against Maxwell Technologies. must be made within 90 days from the date of shipment from Maxwell Tech-

nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.

All data sheets are subject to change without notice 19

8.15.02 REV 12

79C0408

4 Megabit (512k x 8-bit) EEPROM MCM

Product Ordering Options

79C0408 XX X X -XX

Features

Option Details

Access Time

12 = 120 ns

15 = 150 ns

20 = 200 ns

Screening Flow

Multi Chip Module

K = Maxwell Class K

H = Maxwell Class H

I = Induxtrial (Tesing @ -55C,

+25C, +125C)

E = Engineering (testing @ +25C)

Flat Pack

Package

Radiation Feature

RP = Rad-Pak Package

XP = Xray-Pak TM Package

RT = For E and I Screening Flow

(No Rad Tolerant Guarantee)

RT1 = Guaranteed to 10 krad

at Die Level

RT2 = Guaranteed to 25 krad

at Die Level

RT4 = Guaranteed to 40 krad

at Die Level

Base Product

Nomenclature

4 Megabit (512K X 8-bit) EEPROM

MCM

All data sheets are subject to change without notice 20

8.15.02 REV 12


型号：	79C0408RTFE-15
厂家：	MAXWELL TECHNOLOGIES
描述：	EEPROM Module, 512KX8, 150ns, Parallel, CMOS, DFP-40 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
文件：	总20页 (文件大小：416K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

79C0408RTFE-15 [MAXWELL]

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