79LV0408RT2FH-20 [MAXWELL]
Low Voltage 4 Megabit (512k x 8-bit) EEPROM; 低电压4兆位（ 512K ×8位） EEPROM
| 型号： | 79LV0408RT2FH-20 |
| 厂家： | 
MAXWELL TECHNOLOGIES |
| 描述： | Low Voltage 4 Megabit (512k x 8-bit) EEPROM |
| 文件： | 总20页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
79LV0408
Low Voltage 4 Megabit
(512k x 8-bit) EEPROM
CE
CE
CE
3
CE
4
1
2
RES
R/ B
WE
OE
A0-16
128Kx 8
128Kx 8
128Kx 8
128Kx 8
I/O
0-7
Logic Diagram
FEATURES:
DESCRIPTION:
• Four 128k x 8-bit EEPROMs MCM
• RAD-PAK® radiation-hardened against natural
space radiation
Maxwell Technologies’ 79LV0408 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, depending upon space mission. Using Maxwell Technol-
ogies’ patented radiation-hardened RAD-PAK® MCM
packaging technology, the 79LV0408 is the first radiation-
hardened 4 Megabit MCM EEPROM for space applications.
The 79LV0408 uses four 1 Megabit high-speed CMOS die to
yield a 4 Megabit product. The 79LV0408 is capable of in-sys-
tem electrical Byte and Page programmability. It has a 128
bytes Page Programming function to make its erase and write
operations faster. It also features Data Polling and a Ready/
Busy signal to indicate the completion of erase and program-
ming operations. In the 79LV0408, hardware data protection is
provided with the RES pin, in addition to noise protection on
the WE signal. Software data protection is implemented using
the JEDEC optional standard algorithm.
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects
- SEL > 120 MeV/mg/cm2
- SEU > 90 MeV/mg/cm2 read mode
- SEU = 18 MeV/mg/cm2 write mode
• Package:
• - 40 pin RAD-PAK® flat pack
• - 40 pin X-Ray PakTM flat pack
• - 40 pin Rad-Tolerant flat pack
• High speed:
-200 and 250 ns access times
available
• Data Polling and Ready/Busy signal
• Software data protection
• Write protection by RES pin
• High endurance
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode: 1 to 128 byte page
• Low power dissipation
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, the RAD-PAK® package provides
greater than 100 krad (Si) radiation dose tolerance. This prod-
uct is available with screening up to Maxwell Technologies
self-defined Class K.
- 88 mW/MHz active mode
- 440 µW standby mode
01.11.05 Rev 7
1
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
TABLE 1. 79LV0408 PIN DESCRIPTION
PIN
SYMBOL
DESCRIPTION
16-9, 32-31,
28, 30, 8, 33,
7, 36, 6
A0 to A16
Address Input
17-19, 22-26
I/O0 to I/O7
OE
Data Input/Output
Output Enable
Chip Enable 1 through 4
Write Enable
Power Supply
Ground
29
2, 3, 39, 38
34
CE1-4
WE
1, 27, 40
4, 20, 21, 37
5
VCC
VSS
RDY/BUSY
RES
Ready/Busy
35
Reset
TABLE 2. 79LV0408 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
Input Voltage
V
-0.6
-0.51
7.0
7.0
23
V
V
CC
V
IN
Package Weight
RP
RT
Grams
10
Thermal Resistance ( RP Package)
Operating Temperature Range
Storage Temperature Range
Tjc
7.3
125
150
°C/W
°C
TOPR
TSTG
-55
-65
°C
1. V MIN = -3.0V FOR PULSE WIDTH <50NS.
IN
TABLE 3. 79LV0408 RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
Input Voltage
V
3.0
3.6
0.8
VCC +0.3
V
CC
V
-0.31
2.2
V
V
V
IL
V
IH
RES_PIN
V
V -0.5
VCC +1
H
CC
Case Operating Temperature
TC
-55
125
°C
1. V min = -1.0V for pulse width < 50 ns
IL
01.11.05 Rev 7
All data sheets are subject to change without notice
2
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
1
TABLE 4. 79LV0408 CAPACITANCE
(T = 25 °C, f = 1 MHz)
A
PARAMETER
SYMBOL
MIN
MAX
UNIT
Input Capacitance: V = 0 V 1
CIN
pf
IN
WE
CE1-4
OE
--
--
--
--
24
6
24
24
A
0-16
Output Capacitance: VOUT = 0 V 1
COUT
48
pF
1. Guaranteed by design.
TABLE 5. DELTA PARAMETERS
PARAMETER
CONDITION
ICC1
ICC2
ICC3
ICC4
+ 10% of value in Table 6
+ 10% of value in Table 6
+ 10% of value in Table 6
+ 10% of value in Table 6
TABLE 6. 79LV0408 DC ELECTRICAL CHARACTERISTICS
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
PARAMETER
TEST CONDITION
SYMBOL
SUBGROUPS
MIN
MAX
UNITS
Input Leakage Current
VCC = 5.5V, VIN = 5.5V1
I
1, 2, 3
µA
IL
CE1-4
--
--
--
--
--
--
--
2 1
8
OE, WE
A0-16
8
Output Leakage Current
VCC = 5.5V, VOUT = 5.5V/0.4V
ILO
1, 2, 3
8
µA
µA
mA
mA
Standby V Current
CE = V
ICC1
ICC2
ICC3
80
4
CC
CC
CE = V
IH
Operating VCC Current2 IOUT = 0mA, Duty = 100%,
Cycle = 1µs at VCC = 5.5V
1, 2, 3
1, 2, 3
1, 2, 3
15
IOUT = 0mA, Duty = 100%,
Cycle = 150ns at VCC = 5.5V
ICC4
--
50
Input Voltage
RES_PIN
V
--
0.8
--
V
V
IL
V
2.2
IH
V
V
CC -0.5
--
H
Output Voltage
IOL = 2.1 mA
OH = -0.4 mA
V
1, 2, 3
--
0.4
--
OL
I
V
2.4
OH
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3
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
1. ILI on RES = 100 uA max.
2. Only on CE\ Active.
1
TABLE 7. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
PARAMETER
SYMBOL
SUBGROUPS
MIN
MAX
UNIT
Address Access Time CE = OE = V , WE = V
tACC
9, 10, 11
ns
IL
IH
-200
-250
--
--
200
250
Chip Enable Access Time OE = V , WE = V
-200
-250
tCE
tOE
tOH
tDF
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
IL
IH
0
0
200
250
Output Enable Access Time CE = V , WE = V
IL
IH
-200
-250
0
0
110
120
Output Hold to Address Change CE = OE = V , WE = V
-200
-250
IL
IH
0
0-
--
--
2
Output Disable to High-Z
CE = V , WE = V
0
0
60
60
IL
IH
-200
-250
CE = OE = V , WE = V
-200
-250
tDFR
9, 10, 11
9, 10, 11
IL
IH
0
0
300
350
3
RES to Output Delay CE = OE = V , WE = V
tRR
ns
IL
IH
-200
-250
--
--
520
550
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNIT
MIN
Address Setup Time
tAS
9, 10, 11
ns
-200
-250
0
0
--
--
01.11.05 Rev 7
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4
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNIT
MIN
Chip Enable to Write Setup Time (WE Controlled)
tCS
9, 10, 11
ns
-200
-250
0
0
--
--
Write Pulse WidthCE Controlled
9, 10, 11
ns
-200
-250
tCW
200
250
--
--
WE Controlled
-200
-250
200
250
--
--
tWP
tAH
Address Hold Time
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
µs
-200
-250
125
150
--
--
Data Setup Time
-200
-250
tDS
tDH
tCH
tWS
tWH
tOES
tOEH
tWC
tDL
100
100
--
--
Data Hold Time
-200
-250
10
10
--
--
Chip Enable Hold Time (WE Controlled)
-200
-250
0
0
--
--
Write Enable to Write Setup Time (CE Controlled)
-200
-250
0
0
--
--
Write Enable Hold Time (CE Controlled)
-200
-250
0
0
--
--
Output Enable to Write Setup Time
-200
-250
0
0
--
--
Output Enable Hold Time
-200
-250
0
0
--
--
Write Cycle Time2
-200
-250
--
--
15
15
Data Latch Time
-200
-250
700
750
--
--
Byte Load Window
tBL
-200
-250
100
100
--
--
01.11.05 Rev 7
All data sheets are subject to change without notice
5
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(V = 3.3V ±10%, TA = -55 TO +125°C)
CC
1
PARAMETER
SYMBOL
SUBGROUPS
MAX
UNIT
MIN
Byte Load Cycle
tBLC
9, 10, 11
µs
-200
-250
1
1
--
--
Time to Device Busy
-200
-250
tDB
tDW
tRP
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
µs
µs
150
150
--
--
Write Start Time3
-200
-250
150
150
--
--
RES to Write Setup Time
-200
-250
100
100
--
--
V to RES Setup Time4
tRES
CC
-200
-250
1
1
--
--
1. Use this divice in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
1, 2
TABLE 9. 79LV0408 MODE SELECTION
CE 3
PARAMETER
OE
WE
I/O
RES
RDY/BUSY
Read
V
V
V
DOUT
V
High-Z
High-Z
IL
IL
IH
H
Standby
Write
V
X
X
High-Z
X
IH
V
V
V
D
V
High-Z --> V
OL
IL
IH
IL
IN
H
Deselect
Write Inhibit
V
V
V
High-Z
V
High-Z
IL
IH
IH
H
X
X
X
V
--
--
X
X
--
--
IH
V
X
IL
Data Polling
Program
V
V
V
Data Out (I/O7)
High-Z
V
V
IL
IL
IH
H
OL
X
X
X
V
High-Z
IL
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
3. For CE1-4 only one CE can be used (“on”) at a time.
01.11.05 Rev 7
All data sheets are subject to change without notice
6
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 1. READ TIMING WAVEFORM
01.11.05 Rev 7
All data sheets are subject to change without notice
7
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
01.11.05 Rev 7
All data sheets are subject to change without notice
8
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
01.11.05 Rev 7
All data sheets are subject to change without notice
9
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED)
01.11.05 Rev 7
All data sheets are subject to change without notice 10
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED)
FIGURE 6. DATA POLLING TIMING WAVEFORM
01.11.05 Rev 7
All data sheets are subject to change without notice 11
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
Toggle Bit Waveform
EEPROM APPLICATION NOTES
This application note describes the programming procedures for each EEPROM module (four in each MCM) and
details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte
of data can be loaded within 30 µs. In case CE and WE are kept high for 100 µs after data input, the EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
01.11.05 Rev 7
All data sheets are subject to change without notice 12
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to V after the first write signal. At the-end of a write cycle,
OL
the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES low when V is switched. RES should be kept high during read and programming because it doesn’t provide a
CC
latch function.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
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©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-
take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at VCC on/off
When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
CC
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during VCC on/off by using a CPU reset signal to RES pin.
RES should be kept at V level when VCC is turned on or off. The EEPROM breaks off programming operation when RES
SS
becomes low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES
should be kept high for 10 ms after the last data input.
10mS min
3. Software Data Protection
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non-
protection mode to the protection mode.
01.11.05 Rev 7
All data sheets are subject to change without notice 14
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec-
tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
01.11.05 Rev 7
All data sheets are subject to change without notice 15
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Pin #1 ID
40 PIN RAD-PAK® PACKAGE DIMENSIONS
DIMENSION
SYMBOL
MIN
NOM
MAX
A
b
0.248
0.013
0.006
--
0.274
0.015
0.008
0.850
0.995
--
0.300
0.022
0.010
0.860
1.005
1.025
--
c
D
E
0.985
--
E1
E2
E3
e
0.890
0.000
0.895
0.050
0.040 BSC
0.390
0.245
0.038
40
--
L
0.380
0.214
0.005
0.400
0.270
--
Q
S1
N
F40-01
Note: All dimensions in inches
01.11.05 Rev 7
All data sheets are subject to change without notice 16
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
TM
40 PIN X-RAY-PAK FLAT PACKAGE DIMENSIONS
DIMENSION
NOM
SYMBOL
MIN
MAX
A
b
0.248
0.013
0.006
0.840
0.985
--
0.274
0.015
0.008
0.850
0.995
0.785
0.105
0.040 BSC
0.350
0.065
0.035
40
0.300
0.022
0.010
0.860
1.005
--
c
D
E
E2
E3
e
--
--
L
0.340
0.050
--
0.400
0.075
--
Q
S1
N
NOTE: All Dimensions in Inches
01.11.05 Rev 7
All data sheets are subject to change without notice 17
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
40 PIN RAD-TOLERANT FLAT PACKAGE DIMENSIONS
DIMENSION
NOM
SYMBOL
MIN
MAX
A
b
0.202
0.013
0.006
--
0.224
0.015
0.008
0.850
0.995
--
0.246
0.022
0.010
0.860
1.005
1.025
--
c
D
E
0.985
--
E1
E2
E3
e
0.890
0.000
0.895
0.050
0.040 BSC
0.390
0.220
0.038
40
--
L
0.380
0.190
0.005
0.400
0.270
--
Q
S1
N
NOTE: All Dimensions in Inches
01.11.05 Rev 7
All data sheets are subject to change without notice 18
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies. must be made within 90 days from the date of shipment from Maxwell Tech-
nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.
Product Ordering Options
01.11.05 Rev 7
All data sheets are subject to change without notice 19
©2005 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Model Number
79LV0408
XX
F
X
-XX
Option Details
20 = 200 ns
Feature
Access Time
25 = 250 ns
Multi Chip Module (MCM)1
Screening Flow
K = Maxwell Self-Defined Class K
H = Maxwell Self-Defined Class H
I = Engineering (testing @-55°C,
+25°C and +125°C)
E = Engineering (testing @ +25°C
F = Flat Pack
Package
RP = RAD-PAK® package
RT1 = Guaranteed to 10 krad at
die level
Radiation Feature
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
die level
XP = X-Ray Pak
4 Megabit (512k x 8-bit) EEPROM
MCM
Base Product
Nomenclature
1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows.
01.11.05 Rev 7
All data sheets are subject to change without notice 20
©2005 Maxwell Technologies
All rights reserved.
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