79LV0408RT6RFH-25 [MAXWELL]
EEPROM, 512KX8, 250ns, Parallel, CMOS, PDFP40, DFP-40;
| 型号： | 79LV0408RT6RFH-25 |
| 厂家： | 
MAXWELL TECHNOLOGIES |
| 描述： | EEPROM, 512KX8, 250ns, Parallel, CMOS, PDFP40, DFP-40 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 光电二极管 |
| 文件： | 总20页 (文件大小：424K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
79LV0408
Low Voltage 4 Megabit
(512k x 8-bit) EEPROM
CE
CE
CE
3
CE
4
1
2
RES
R/B
WE
OE
A0-16
128Kx8
128Kx8
128Kx8
128Kx8
Logic Diagram
I/O
0-7
• FEATURES
DESCRIPTION
•
•
Maxwell Technologies’ 79LV0408 multi-chip mod-
ule (MCM) memory features a greater than 100
krad (Si) total dose tolerance, depending upon
space mission. Using Maxwell Technologies’ pat-
ented radiation-hardened RAD-PAK® MCM packag-
ing technology, the 79LV0408 is the first radiation-
hardened 4 Megabit MCM EEPROM for space
applications. The 79LV0408 uses four 1 Megabit
high-speed CMOS die to yield a 4 Megabit product.
The 79LV0408 is capable of in-system electrical
Byte and Page programmability. It has a 128 bytes
Page Programming function to make its erase and
write operations faster. It also features Data Polling
and a Ready/Busy signal to indicate the completion
of erase and programming operations. In the
79LV0408, hardware data protection is provided
with the RES pin, in addition to noise protection on
the WE signal. Software data protection is imple-
mented using the JEDEC optional standard algo-
rithm.
• Four 128k x 8-bit EEPROMs MCM
• RAD-PAK® radiation-hardened against natural
space radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mis-
sion
• Excellent Single event effects @ 25°C
- SEL > 120 MeV cm2/mg (Device)
- SEU > 85 MeV cm2/mg(Memory Cells)
- SEU > 18 MeV cm2/mg (Write Mode)
- SET > 40 MeV cm2/mg (Read Mode)
• Package
- 40 Pin RAD-PAK® Flat Pack
- 40 Pin RAD-PAK® Rad Tolerant Flat Pack
• High speed:
-200 and 250 ns access times available
• Data Polling and Ready/Busy signal
• Software data protection
• Write protection by RES pin
• High endurance
- 10,000 erase/write (Page Mode),
- 10 year data retention
• Page write mode: 1 to 128 byte page
• Low power dissipation
Maxwell Technologies' patented RAD-PAK® packag-
ing technology incorporates radiation shielding in
the microcircuit package. It eliminates the need for
box shielding while providing the required radiation
shielding for a lifetime in orbit or space mission. In
a GEO orbit, the RAD-PAK® package provides
greater than 100 krad (Si) radiation dose tolerance.
This product is available with screening up to Max-
well Technologies self-defined Class K.
- 88 mW/MHz active mode
- 440 µW standby mode
09.17.13 Rev 13
1
All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
TABLE 1. 79LV0408 PIN
D
ESCRIPTION
PIN
SYMBOL
DESCRIPTION
16-9, 32-31,
28, 30, 8, 33,
7, 36, 6
A0 to A16
Address Input
17-19, 22-26
I/O0 to I/O7
OE
Data Input/Output
Output Enable
Chip Enable 1 through 4
Write Enable
Power Supply
Ground
29
2, 3, 39, 38
34
CE1-4
WE
1, 27, 40
4, 20, 21, 37
5
VCC
VSS
RDY/BUSY
RES
Ready/Busy
35
Reset
TABLE 2. 79LV0408 ABSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
S
YMBOL
M
IN
MAX
UNIT
Supply Voltage
Input Voltage
VCC
VIN
RP
RT
Tjc
-0.6
-0.51
7.0
7.0
23
V
V
Package Weight
Grams
10
Thermal Resistance ( RP Package)
Operating Temperature Range
Storage Temperature Range
7.3
125
150
°C/W
°C
°C
TOPR
TSTG
-55
-65
1. VIN MIN = -3.0V FOR PULSE WIDTH <50NS
.
TABLE 3. 79LV0408 RECOMMENDED
O
PERATING
C
ONDITIONS
PARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Supply Voltage
Input Voltage
VCC
3.0
-0.31
2.2
3.6
V
VIL
VIH
VH
0.8
VCC +0.3
VCC +1
V
V
V
RES_PIN
VCC-0.5
Case Operating Temperature
TC
-55
125
°C
1. VIL min = -1.0V for pulse width < 50 ns
09.17.13 Rev 13
All data sheets are subject to change without notice
2
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
1
T
ABLE 4. 79LV0408 CAPACITANCE
(TA = 25 °C, f = 1 MHz)
P
ARAMETER
S
YMBOL
M
IN
MAX
UNIT
Input Capacitance: VIN = 0 V 1
CIN
pf
WE
--
24
CE1-4
OE
A0-16
--
--
--
6
24
24
Output Capacitance: VOUT = 0 V 1
COUT
48
pF
1. Guaranteed by design.
1
TABLE 5. DELTA
PARAMETERS
P
ARAMETER
C
ONDITION
ICC1
ICC2
ICC3
ICC4
+ 10% of value in Table 6
+ 10% of value in Table 6
+ 10% of value in Table 6
+ 10% of value in Table 6
1) Parameters are measured and recorded as Delts per MIL-STD-883
for Class K devices.
T
ABLE 6. 79LV0408 DC ELECTRICAL
C
HARACTERISTICS
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
PARAMETER
TEST
C
ONDITION
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NITS
Input Leakage Cur- VCC = 3.6V, VIN = 3.6V1
IIL
1, 2, 3
4
µA
rent
CE1-4
--
2 1
8
OE, WE
A0-16
--
--
--
8
Output Leakage
Current
VCC = 3.6V, VOUT = 3.6V/0.4V
ILO
1, 2, 3
8
µA
µA
Standby VCC Current CE = VCC
CE = VIH
ICC1
ICC2
ICC3
--
--
--
80
4
mA
mA
Operating VCC
Current2
IOUT = 0mA, Duty = 100%,
Cycle = 1µs at VCC = 3.6V
1, 2, 3
1, 2, 3
1, 2, 3
15
IOUT = 0mA, Duty = 100%,
Cycle = 150ns at VCC = 3.6V
ICC4
--
50
Input Voltage
VIL
VIH
VH
--
0.8
--
V
V
2.2
VCC -0.5
--
RES_PIN
Output Voltage
IOL = 2.1 mA
IOH = -0.4 mA
VOL
VOH
1, 2, 3
--
0.4
--
2.4
09.17.13 Rev 13
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3
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
1. ILI on RES = 100 uA max.
2. Only one CE\ Active.
1
T
ABLE 7. 79LV0408 AC ELECTRICAL
C
HARACTERISTICS FOR
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
R
EAD
O
PERATIONS
PARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
UNIT
Address Access Time CE = OE = VIL, WE = VIH
tACC
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
-200
-250
--
--
200
250
Chip Enable Access Time OE = VIL, WE = VIH
-200
-250
tCE
tOE
tOH
tDF
ns
ns
ns
ns
0
0
200
250
Output Enable Access Time CE = VIL, WE = VIH
-200
-250
0
0
110
120
Output Hold to Address Change CE = OE = VIL, WE = VIH
-200
-250
0
0-
--
--
Output Disable to High-Z2
CE = VIL, WE = VIH
-200
-250
0
0
60
60
CE = OE = VIL, WE = VIH
-200
-250
tDFR
9, 10, 11
9, 10, 11
0
0
300
350
3
RES to Output Delay CE = OE = VIL, WE = VIH
tRR
ns
-200
-250
--
--
520
550
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
T
ABLE 8. 79LV0408 AC ELECTRICAL
C
HARACTERISTICS FOR
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
WRITE
O
PERATIONS
1
PARAMETER
S
YMBOL
SUBGROUPS
M
AX
UNIT
M
IN
Address Setup Time
tAS
9, 10, 11
ns
-200
-250
0
0
--
--
09.17.13 Rev 13
All data sheets are subject to change without notice
4
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
T
ABLE 8. 79LV0408 AC ELECTRICAL
C
HARACTERISTICS FOR
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
WRITE
O
PERATIONS
1
PARAMETER
S
YMBOL
SUBGROUPS
M
AX
UNIT
M
IN
Chip Enable to Write Setup Time (WE Controlled)
tCS
9, 10, 11
ns
-200
-250
0
0
--
--
Write Pulse WidthCE Controlled
9, 10, 11
ns
-200
-250
tCW
200
250
--
--
WE Controlled
-200
-250
200
250
--
--
tWP
tAH
Address Hold Time
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
µs
-200
-250
125
150
--
--
Data Setup Time
-200
-250
tDS
100
100
--
--
Data Hold Time
-200
-250
tDH
10
10
--
--
Chip Enable Hold Time (WE Controlled)
-200
-250
tCH
0
0
--
--
Write Enable to Write Setup Time (CE Controlled)
-200
-250
tWS
tWH
tOES
tOEH
tWC
tDL
0
0
--
--
Write Enable Hold Time (CE Controlled)
-200
-250
0
0
--
--
Output Enable to Write Setup Time
-200
-250
0
0
--
--
Output Enable Hold Time
-200
-250
0
0
--
--
Write Cycle Time2
-200
-250
--
--
15
15
Data Latch Time
-200
-250
700
750
--
--
Byte Load Window
tBL
-200
-250
100
100
--
--
09.17.13 Rev 13
All data sheets are subject to change without notice
5
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
T
ABLE 8. 79LV0408 AC ELECTRICAL
C
HARACTERISTICS FOR
(VCC = 3.3V ±10%, TA = -55 TO +125°C)
WRITE
O
PERATIONS
1
PARAMETER
S
YMBOL
SUBGROUPS
M
AX
UNIT
M
IN
Byte Load Cycle
-200
-250
tBLC
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
µs
1
1
--
--
Time to Device Busy
-200
-250
tDB
tDW
tRP
ns
ns
µs
µs
150
150
--
--
Write Start Time3
-200
-250
150
150
--
--
RES to Write Setup Time
-200
-250
100
100
--
--
VCC to RES Setup Time4
tRES
-200
-250
1
1
--
--
1. Use this divice in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used.
4. Guaranteed by design.
1, 2
T
ABLE 9. 79LV0408 MODE
S
ELECTION
I/O
CE 3
P
ARAMETER
OE
WE
RES
RDY/BUSY
Read
VIL
VIH
VIL
VIL
X
VIL
X
VIH
X
DOUT
VH
X
High-Z
High-Z
High-Z --> VOL
High-Z
--
Standby
Write
High-Z
VIH
VIH
X
VIL
VIH
VIH
X
DIN
VH
VH
X
Deselect
Write Inhibit
High-Z
--
--
X
VIL
VIL
X
X
--
Data Polling
Program
VIL
X
VIH
X
Data Out (I/O7)
High-Z
VH
VIL
VOL
High-Z
1. X = Don’t care.
2. Refer to the recommended DC operating conditions.
3. For CE1-4 only one CE can be used (“on”) at a time.
09.17.13 Rev 13
All data sheets are subject to change without notice
6
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
F
IGURE 1. READ
TIMING
WAVEFORM
09.17.13 Rev 13
All data sheets are subject to change without notice
7
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
F
IGURE 2. BYTE
WRITE
TIMING
W
AVEFORM(1) (WE CONTROLLED
)
09.17.13 Rev 13
All data sheets are subject to change without notice
8
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
F
IGURE 3. BYTE
WRITE
TIMING
WAVEFORM (2) (CE CONTROLLED
)
09.17.13 Rev 13
All data sheets are subject to change without notice
9
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
F
IGURE 4. PAGE
WRITE
TIMING
WAVEFORM(1) (WE CONTROLLED
)
09.17.13 Rev 13
All data sheets are subject to change without notice 10
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
F
IGURE 5. PAGE
WRITE
TIMING
WAVEFORM(2) (CE CONTROLLED
)
F
IGURE 6. DATA
POLLING
TIMING
WAVEFORM
09.17.13 Rev 13
All data sheets are subject to change without notice 11
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
F
IGURE 7. SOFTWARE
DATA
P
ROTECTION
TIMING
WAVEFORM(1) (IN PROTECTION MODE
)
F
IGURE 8. SOFTWARE
DATA
PROTECTION
TIMING
W
AVEFORM(2) (IN NON
-
PROTECTION MODE
)
Toggle Bit Waveform
EEPROM APPLICATION
NOTES
This application note describes the programming procedures for each EEPROM module (four in
each MCM) and details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a
single write cycle, and allows the undefined data within 128 bytes to be written corresponding to
the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30
µs for the second byte. In the same manner each additional byte of data can be loaded within 30
µs. In case CE and WE are kept high for 100 µs after data input, the EEPROM enters erase and
write mode automatically and only the input data are written into the EEPROM.
09.17.13 Rev 13
All data sheets are subject to change without notice 12
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched
by the rising edge of WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set
to read mode during a write cycle, an inversion of the last byte of data to be loaded output is from
I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM.
The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the
first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high imped-
ance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be pro-
tected by keeping RES low when VCC is switched. RES should be kept high during read and pro-
gramming because it doesn’t provide a latch function.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions
described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to pro-
gramming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation func-
09.17.13 Rev 13
All data sheets are subject to change without notice 13
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
tion that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a
width of more than 20ns on the control pins.
2. Data Protection at VCC on/off
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs,
may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming,
the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to
RES pin.
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming
operation when RES becomes low, programming operation doesn’t finish correctly in case that RES
falls low during programming operation. RES should be kept high for 10 ms after the last data input.
10mS min
3. Software Data Protection
The software data protection function is to prevent unintentional programming caused by noise gener-
ated by external circuits. In software data protection mode, 3 bytes of data must be input before write
data as follows. These bytes can switch the non-protection mode to the protection mode.
09.17.13 Rev 13
All data sheets are subject to change without notice 14
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM
turns to the non-protection mode and can write data normally. However, when the data is input in the
canceling cycle, the data cannot be written.
09.17.13 Rev 13
All data sheets are subject to change without notice 15
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
40 PIN
RAD-PAK® PACKAGE
D
IMENSIONS
D
IMENSION
SYMBOL
M
IN
NOM
M
AX
A
b
0.248
0.013
0.006
--
0.274
0.015
0.008
0.850
0.995
--
0.300
0.022
0.010
0.860
1.005
1.025
--
c
D
E
0.985
--
E1
E2
E3
e
0.890
0.000
0.895
0.050
--
0.040 BSC
0.390
0.245
0.038
40
L
0.380
0.214
0.005
0.400
0.270
--
Q
S1
N
Note: All dimensions in inches
Top and Bottom of the package are internally tied to ground.
09.17.13 Rev 13
All data sheets are subject to change without notice 16
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
40 PIN X-RAY-PAKTM FLAT
PACKAGE
D
IMENSIONS
D
IMENSION
OM
SYMBOL
M
IN
N
M
AX
A
b
0.248
0.013
0.006
0.840
0.985
--
0.274
0.015
0.008
0.850
0.995
0.785
0.105
0.300
0.022
0.010
0.860
1.005
--
c
D
E
E2
E3
e
--
--
0.040 BSC
0.350
0.065
0.035
40
L
0.340
0.050
--
0.400
0.075
--
Q
S1
N
NOTE: All Dimensions in Inches
Top and Bottom of package tied internally to ground.
09.17.13 Rev 13
All data sheets are subject to change without notice 17
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
40 PIN
R
AD-TOLERANT
F
LAT
P
ACKAGE
D
IMENSIONS
D
IMENSION
OM
SYMBOL
M
IN
N
M
AX
A
b
0.202
0.013
0.006
--
0.224
0.015
0.008
0.850
0.995
--
0.246
0.022
0.010
0.860
1.005
1.025
--
c
D
E
0.985
--
E1
E2
E3
e
0.890
0.000
0.895
0.050
--
0.040 BSC
0.390
0.212
0.038
40
L
0.380
0.190
0.005
0.400
0.236
--
Q
S1
N
All dimensions are in inches.
Top and Bottom of package is internally tied to ground.
09.17.13 Rev 13
All data sheets are subject to change without notice 18
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell
Technologies verifies functionality by testing key parameters either by 100% testing, sample test-
ing or characterization.
The specifications presented within these data sheets represent the latest and most accurate
information available to date. However, these specifications are subject to change without notice
and Maxwell Technologies assumes no responsibility for the use of this information.
Maxwell Technologies’ products are not authorized for use as critical components in life support
devices or systems without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies must be made within 90 days from the date of shipment
from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of
defective parts.
09.17.13 Rev 13
All data sheets are subject to change without notice 19
©2013 Maxwell Technologies
All rights reserved.
Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM
79LV0408
Product Ordering Options
Model Number
Features
Option Details
79LV0408
XX
F
X
-XX
Access Time
20 = 200 ns
25 = 250 ns
Multi Chip Module (MCM)
Screening Flow
K = Maxwell Self-Defined Class K
H = Maxwell Self-Defined Class H
I = Industrial(Testing at -55C, +25C, +125C)
E = Engineering (Tested at +25C)
F = Flat Pack
Package
Radiation Features1
RP = Rad-Pak® Package
RT = No Radiation Guarentee (Class E and I Only)
RT1 = 10 krad (Read/Write)
RT2R = 25 krad (Read); 15 krad (Write)
RT4R = 40 krad (Read); 15 krad (Write)
RT6R = 60 krad (Read); 15 krad (Write)
Base Product
Nomenclature
1 Megabit (128K x 8) EEPROM
1) The device will meet the specified read mode TID level, at the die level, if it not written to during irradiation. Writing to the
device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. Writing to the device
before irradiation does not alter the device’s read mode TID level.
09.17.13 Rev 13
All data sheets are subject to change without notice 20
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