79LV0832RT4QH-20_技术文档

79LV0832

8 Megabit (256K x 32-Bit)

Low Voltage EEPROM MCM

FEATURES:

DESCRIPTION:

• 256k x 32-bit EEPROM MCM

• R^AD-PAK® radiation-hardened against natural

space radiation

Maxwell Technologies’ 79LV0832 multi-chip module (MCM)

memory features a greater than 100 krad (Si) total dose toler-

ance, dependent upon orbit. Using Maxwell Technologies’ pat-

ented radiation-hardened R^AD-PAK® MCM packaging

technology, the 79LV0832 is the first radiation-hardened 8

megabit MCM EEPROM for space application. The 79LV0832

uses eight 1 Megabit high speed CMOS die to yield an 8

megabit product. The 79LV0832 is capable of in-system elec-

trical dword and page programmability. It has a 128 x 32 byte

page programming function to make its erase and write opera-

tions faster. It also features Data Polling and a Ready/Busy

signal to indicate the completion of erase and programming

operations. In the 79LV0832, hardware data protection is pro-

vided with the RES pin. Software data protection is imple-

mented using the JEDEC standard algorithm.

• Total dose hardness:

- >100 krad (Si)

- Dependent upon orbit

• Excellent Single event effects

- SEL > 84.7 MeV/mg/cm²

TH

- SEU > 26.6 MeV/mg/cm²read mode

- SEU = 11.4 MeV/mg/cm²write mode

• High endurance

- 10,000 cycles/dword, 10 year data retention

• Page Write Mode: 2 X 128 dword page

• High Speed:

- 200 and 250 ns maximum access times

• Automatic programming

- 15 ms automatic Page/dword write

Maxwell Technologies' patented R^AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R^AD-PAK®‘ provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to MAxwell Technologies self-defined Class

K.

01.10.05 Rev 8

1

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

TABLE 1. 79LV0832 PINOUT DESCRIPTION

SYMBOL

DESCRIPTION

84-77, 29-37

ADDR0 to ADDR16 Address Input

48-55, 66-73, 96,

1-7, 18-25

I/O0 to I/O31

Data Input/Output

61

41, 43

45

OE

CE0-1

WE

Output Enable

Chip Enable 0 through 1

Write Enable

10, 17, 28, 40, 44,

58, 65, 76, 87, 93

3.3V

Power Supply

8, 9, 11-16, 26, 27,

38, 42, 46, 56, 57,

59, 60, 62-64, 74,

75, 85, 86, 88-92,

94, 95

GND

Ground

39

47

RDY/BUSY

RES

Ready/Busy

Reset

All data sheets are subject to change without notice

01.10.05 Rev 8

2

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

TABLE 2. 79LV0832 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Supply Voltage

Input Voltage

V

-0.6

7.0

V

CC

V

-0.5¹

IN

Package Weight

RP

RT

45

38

3

Grams

Thermal Impedance (RP and RT Packages; XP TBD)

Operating Temperature Range

F_JC

T_OPR

T_STG

^°C/W

^°C

-55

-65

125

150

Storage Temperature Range

1. V min = -3.0V for pulse width <50ns.

IN

TABLE 3. 79LV0832 RECOMMENDED DC OPERATING CONDITIONS

PARAMETER

SYMBOL

MIN

MAX

UNIT

Supply Voltage

Input Voltage

V

3.0

-0.3¹

2.2

3.6

0.8

V_CC+0.3

V

CC

V

IL

V

IH

RES_PIN

V

V -0.5

V_CC+1

H

CC

Operating Temperature Range

T_OPR

-55

125

^°C

1. V min = -1.0V for pulse width < 50 ns

IL

1

TABLE 4. DELTA LIMITS

2

P^ARAMETER

VARIATION

I_CC1A

+/- 10 %

I_CC2A

I_CC2C

I_LI- ADDR, CE, OE, WE

I_Lo- D0 - D31

1. Delta limits are calculated from test data taken at preburn-in and post burn-in as

defined in MIL-STD-883

2. Specified value in Table 6

All data sheets are subject to change without notice

01.10.05 Rev 8

3

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

TABLE 5. 79LV0832 CAPACITANCE

(T = 25 ^°C, f = 1 MHz)

A

P^ARAMETER

Input Capacitance: V = 0V

SYMBOL

MIN

MAX

UNIT

1

C

--

6

pF

IN

C OE

IN

C WE

6

IN

C CE_0-1

6

IN

C A0-A16

6

IN

C RES

48

6

IN

1

Output Capacitance: V_OUT= 0V

C_OutRDY/BSY

pF

C

_{O ut}D0-D31

12

1. Guaranteed by design.

TABLE 6. 79LV0832 DC ELECTRICAL CHARACTERISTICS

(V = 3.3V ±10%, T_A= -55 TO +125°C)

CC

P^ARAMETER

TEST CONDITION

SYMBOL

SUBGROUPS

MIN

MAX

UNITS

Input Leakage Current¹V = V

I_LI

1, 2, 3

--

4²

720²

4

µA

IN

CC

V =V

IN IH

A0-A16, CE,WE, OE

V =0V

IN

Input Leakage Current V =V

I_LI

1, 2, 3

IN CC

D0-D31

Output Leakage Current (V_CC= 3.6V, V_OUT= 3.6V/0.4V)

I_LO

1, 2, 3

--

4

µA

Standby V_CCCurrent¹

CE = ADDR=WE=OE =V

I_CC1A

I_CC1B

I_CC1C

I_CC2A

80

15

24

CC

CE = ADDR=WE=OE =V

mA

IH

CE = V ; ADDR=WE=OE =0V

IH

Operating

V

OE = 0V; ADDR=WE=V

I_OUT= 0mA, CE Duty = 100%,

Cycle = 1 us at V_CC= 3.6V

1, 2, 3

CC

_CCCurrent^1,3

OE =ADDR=WE=0V

I_CC2B

I_CC2C

I_CC2D

--

40

60

mA

V

I_OUT= 0mA, CE Duty = 100%,

Cycle = 1 us at V_CC= 3.6V

OE = 0V; ADDR=WE=V

CC

I_OUT= 0mA, CE Duty = 100%,

Cycle = 200 ns at V_CC=3.6V

OE =ADDR=WE=0V

--

100

0.8

I_OUT= 0mA, CE Duty = 100%,

Cycle = 200 ns at V_CC= 3.6V

Input Voltage

V

IL

V

2.2

IH

RES_PIN

V

V_CC-0.5

H

All data sheets are subject to change without notice

01.10.05 Rev 8

4

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

TABLE 6. 79LV0832 DC ELECTRICAL CHARACTERISTICS

(V = 3.3V ±10%, T_A= -55 TO +125°C)

CC

P^ARAMETER

TEST CONDITION

SYMBOL

SUBGROUPS

MIN

MAX

UNITS

Output Voltage

Data Lines: V Min, I_OL= 2.1mA

V

1, 2, 3

--

0.4

--

V

CC

OL

RDY/BSY_Line: V_CCMin, I_OL= 12mA

Data Lines: V_CCMin, I_OH= -400µA

RDY/BSY_Line: V_CCMin, I_OH= -12mA

V

OL

V

2.4

OH

V

--

OH

All Outputs: V Min, I_OH=-100uA

V -0.3V

CC

1. All Inputs are tied to Vcc with a 5.5KW resistor, except for RES which is 30KW.

2. For RES I_LI=800uA max.

3. Only one CE active (low) at a time

1

TABLE 7. 79LV0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(V = 3.3V ±10%, T_A= -55 TO +125°C)

CC

P^ARAMETER

SYMBOL

SUBGROUPS

MIN

MAX

UNIT

Address Access Time CE = OE = V , WE = V

t_ACC

9, 10, 11

ns

IL

IH

-200

-250

--

200

250

Chip Enable Access Time OE = V , WE = V

-200

-250

t_CE

t_OE

t_OH

9, 10, 11

ns

IL

IH

--

200

250

Output Enable Access TIme CE = V , WE = V

IL

IH

-200

-250

0

110

120

Output Hold to Address Change CE = OE =V , WE = V

-200

-250

IL

IH

0

--

Output Disable to High-Z ²

CE = V , WE = V

t_DF

ns

IL

IH

-200

-250

0

50

CE = OE = V , WE = V

t_DFR

IL

IH

-200

-250

0

300

350

3

RES to Output Delay CE = OE = V , WE = V

T_RR

9, 10, 11

ns

IL

IH

-200

-250

0

525

550

1. Test conditions: input pulse levels = 0.4V to 2.2V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including

scope and jig); reference levels for measuring timing = 0.8 V/1.8 V.

2. t_DFand t_DFRare defined as the time at which the output becomes an open circuit and data is no longer driven.

3. Guaranteed by design.

All data sheets are subject to change without notice

01.10.05 Rev 8

5

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

TABLE 8. 79LV0832 AC ELECTRICAL CHARACTERISTICS

P^AGE/DWORD ERASE AND PAGE/DWORD WRITE OPERATION

(V = 3.3V ±10%, T_A= -55 TO +125°C)

CC

1

P^ARAMETER

SYMBOL

SUBGROUPS

MAX

UNITS

MIN

Address Setup Time

t_AS

9, 10, 11

ns

-200

-250

0

--

Chip Enable to Write Setup Time (WE controlled)

-200

-250

t_CS

9, 10, 11

ns

0

--

Write Pulse Width

CE controlled

-200

-250

WE controlled

-200

t_CW

ns

200

250

--

t_WP

200

250

--

-250

Address Hold Time

-200

-250

t_AH

9, 10, 11

ns

ms

200

250

--

Data Setup Time

-200

-250

t_DS

150

200

--

Data Hold Time

-200

-250

t_DH

t_CH

t_WS

t_WH

t_OES

t_OEH

t_WC

10

--

Chip Enable Hold Time (WE controlled)

-200

-250

0

--

Write Enable to Write Setup Time (CE controlled)

-200

-250

0

--

Write Enable Hold Time (CE controlled)

-200

-250

0

--

Output Enable to Write Setup Time

-200

-250

0

--

Output Enable Hold Time

-200

-250

0

--

Write Cycle Time ²

-200

-250

--

15

All data sheets are subject to change without notice

01.10.05 Rev 8

6

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

TABLE 8. 79LV0832 AC ELECTRICAL CHARACTERISTICS

P^AGE/DWORD ERASE AND PAGE/DWORD WRITE OPERATION

(V = 3.3V ±10%, T_A= -55 TO +125°C)

CC

1

P^ARAMETER

SYMBOL

SUBGROUPS

MAX

UNITS

MIN

Data Latch Time

t_DL

9, 10, 11

ns

-200

-250

700

750

--

Byte Load Window

-200

-250

t_BL

t_BLC

t_DB

9, 10, 11

µs

ns

µs

100

200

--

Byte Load Cycle

-200

-250

1

30

Time to Device Busy

-200

-250

100

120

--

Write Start Time ³

-200

-250

t_DW

250

--

RES to Write Setup Time⁴

-200

-250

t_RP

100

--

V

_CCto RES Setup Time⁴

t_RES

-200

-250

1

--

1. Use this device in a longer cycle than this value.

2. t_WCmust be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the

internal write operation within this value.

3. Next read or write operation can be initiated after t_DWif polling techniques or RDY/BUSY are used.

4. Guaranteed by desgin.

All data sheets are subject to change without notice

01.10.05 Rev 8

7

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

1, 2

I/O

TABLE 9. 79LV0832 MODE SELECTION

CE ³

PARAMETER

OE

WE

RES

RDY/BUSY

Read

V

D_OUT

V

IL

IH

H

OH

Standby

Write

V

X

High-Z

X

V

IH

OH

V

D

V

V_OH--> V

OL

IL

IH

IL

IN

H

Deselect

Write Inhibit

V

High-Z

V

OH

IL

IH

H

X

V

--

X

--

IH

V

X

IL

Data Polling

V

Data Out (I/O7)

High-Z

V

OL

IL

IH

H

Program Reset

X

V

OH

IL

1. X = Don’t care.

2. Refer to the recommended DC operating conditions.

3. For CE_0-1only one CE can be enabled (Low) at a time.

All data sheets are subject to change without notice

01.10.05 Rev 8

8

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

FIGURE 1. READ TIMING WAVEFORM

High

FIGURE 2. DWORD WRITE TIMING WAVEFORM (1) (WE CONTROLLED)

All data sheets are subject to change without notice

01.10.05 Rev 8

9

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

FIGURE 3. DWORD WRITE TIMING WAVEFORM (2) (CE CONTROLLED)

F^IGURE4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)

All data sheets are subject to change without notice

01.10.05 Rev 8

10

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)^1,2

1) A7-A16 ARE PAGE ADDRESSES AND MUST BE THE SAME WITHIN A PAGE WRITE OPERATION

2) REFER TO TABLE 7 AND 8 FOR TIMING CHARACTERISTICS

1

FIGURE 6. DATA POLLING TIMING WAVEFORM

I/O7, 15, 23, 31

1) R^{EFER TO}TABLE 7 AND 8 FOR TIMING CHARACTORISTICS

All data sheets are subject to change without notice

01.10.05 Rev 8

11

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)¹

1)REPEAT THE DATA PATTERN IN EACH OF THE FOUR BYTES.

FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)¹

1) REPEAT THE DATA PATTERN IN EACH OF THE FOUR BYTES.

EEPROM APPLICATION NOTES

This application note describes the programming procedures for the EEPROM modules and with details of various

techniques to preserve data integrity.

Automatic Page Write

Page-mode write feature allows 1 to 128 dwords of data to be written into the EEPROM in a single write cycle. Loading

the first dword of data, the data load window opens 30µs for the second dword. In the same manner each additional

dword of data can be loaded within 30µs of the preceding falling edge of either WE or CE. When CE and WE are kept

All data sheets are subject to change without notice

01.10.05 Rev 8

12

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

high for 100µs after data input, the EEPROM enters the write mode automatically and the data input is written into the

EEPROM.

WE, CE Pin Operation

During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of

WE or CE.

Data Polling

Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a

write cycle, an inversion of the last dword of data to be loaded outputs from I/O 7, 15, 23, 31 to indicate that the

EEPROM is performing a write operation.

RDY/Busy Signal

RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal

goes low (V_OL)after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( V ).

OH

RES Signal

When RES is LOW (V ), the EEPROM cannot be read or programmed. The EEPROM data must be protected by

L

keeping RES low when V is power on and off. RES should be high (V ) during read and programming operations.

CC

H

Data Protection

To protect the data during operation and power on/off, the EEPROM has the internal functions described below.

1. Data Protection at V on/off

CC

When V is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to

CC

programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable

state during V_CCon/off by using a CPU reset signal to RES pin.

All data sheets are subject to change without notice

01.10.05 Rev 8

13

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

Data Protection

To protect the data during operation and power on/off, the EEPROM has the internal functions described below.

1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.

During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-

take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in

programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.

2. RES Signal

RES should be kept at V level when V_CCis turned on or off. The EEPROM breaks off programming operation when RES

SS

become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES

should be kept high for 10 ms after the last data is input

All data sheets are subject to change without notice

01.10.05 Rev 8

14

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

.

15mS

3. Software Data Protection Enable

The 79LV0832 contains a software controlled write protection feature that allows the user to inhibit all write operations to the

device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent

writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the

EEPROM and allowing the write cycle period (t_WC) of 10ms to elapse:

.

Software Data Protection Enable Sequence

Address

Data

5555

AA AA AA AA

55 55 55 55

AAAA or 2AAA

5555

A0 A0 A0 A0

4. Writing to the Memory with Software Data Protection Enabled

To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This

sequence allows the write to occur while at the same time keeping the software protection enabled

Sequence for Writing Data with Software Protection Enabled.

Address

Data

5555

AA AA AA AA

55 55 55 55

AAAA or 2AAA

5555

A0 A0 A0 A0

Write Address(s)

Normal Data Input

All data sheets are subject to change without notice

01.10.05 Rev 8

15

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

5. Disabling Software Protection

Software data protection mode can be disabled by inputting the following data sequence. Once the software pro-

tection sequence has been written, no data can be written to the memory until the write cycle (T_WC) has elapsed.

Software Protection Disable Sequence

Address

Data

5555

AA AA AA AA

55 55 55 55

AAAA or 2AAA

80 80 80 80

5555

AA AA AA AA

AAAA or 2AAA

5555

55 55 55 55

20 20 20 20

Devices are shipped in the “unprotected” state, meaning that the contents of the memory can be changed as required

by the user. After the software data protection is enabled, the device enters the Protect Mode where no further write

commands have any effect on the memory contents.

All data sheets are subject to change without notice

01.10.05 Rev 8

16

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

96-PIN RAD-PAK® QUAD FLAT PACKAGE

DIMENSION

SYMBOL

MIN

NOM

MAX

A

b

.184

.010

---

.200

.012

.009

1.420

1.162

.050

.129

2.528

2.500

1.700

.165

96

.216

.013

c

.012

D

D1

e

1.408

1.432

S1

L

---

2.485

---

2.543

2.505

L1

L2

A1

N

.152

.178

Note: All dimensions in inches

All data sheets are subject to change without notice

01.10.05 Rev 8

17

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

A1

Pin #1 ID

c

S1

MAXWELL

e

b

TECHNOLOGIES

L2

D1

D(sq)

L1(sq)

A

L(sq)

96 PIN RAD-TOLERANT QUAD FLAT PACKAGE

DIMENSION

SYMBOL

MIN

NOM

MAX

A

b

.167

.010

--

.183

.012

.009

1.420

1.162

.050

.129

2.528

2.500

1.700

.165

96

.199

.013

c

.012

D

D1

e

1.408

1.432

S1

L

--

2.485

--

2.543

2.505

--

L1

L2

A1

N

.152

.178

Note: All dimensions in inches

All data sheets are subject to change without notice

01.10.05 Rev 8

18

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

96 PIN XRAYL QUAD FLAT PACKAGE

DIMENSION

SYMBOL

MIN

NOM

MAX

A

b

.200

.007

.222

.010

.245

.013

c

.009

.012

D

D1

e

1.690

1.707

1.150

0.050

.278

1.725

S1

L

3.000

2.985

2.090

.115

3.020

3.000

2.200

.130

3.040

3.005

2.210

.145

L1

L2

A1

N

96

Note: All dimensions in inches

All data sheets are subject to change without notice

01.10.05 Rev 8

19

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

79LV0832

Important Notice:

These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies

functionality by testing key parameters either by 100% testing, sample testing or characterization.

The specifications presented within these data sheets represent the latest and most accurate information available to

date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no

responsibility for the use of this information.

Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems

without express written approval from Maxwell Technologies.

Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Tech-

nologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts.

All data sheets are subject to change without notice

01.10.05 Rev 8

20

Low Voltage 8 Megabit (256K x 32-Bit) EEPROM MCM

Product Ordering Options

79LV0832

Model Number

79LV0832

XX

Q

X

-XX

Option Details

20 = 200 ns

Feature

Access Time

25 = 250 ns

Multi Chip Module (MCM)¹

Screening Flow

K = Maxwell Self-Defined Class K

H = Maxwell Self-Defined Class H

I = Industrial (testing @ -55°C,

+25°C, +125°C)

E = Engineering (testing @ +25°C)

Q = Quad Flat Pack

Package

RP = R^AD-PAK® Package

XP = X^RAY-PAKL Package

RT1 = Guaranteed to 10 krad at

die level

Radiation Feature

RT2 = Guaranteed to 25 krad at

die level

RT4 = Guaranteed to 40 krad at

8 Megabit (256K x 32-Bit)

Low Voltage EEPROM MCM

Base Product

Nomenclature

1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows.

All data sheets are subject to change without notice

01.10.05 Rev 8

21


型号：	79LV0832RT4QH-20
厂家：	MAXWELL TECHNOLOGIES
描述：	8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 8兆位（ 256K ×32位），低电压的EEPROM MCM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件：	总21页 (文件大小：459K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

79LV0832RT4QH-20 [MAXWELL]

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79LV0832XPQI-20

79LV0832XPQI-25

79LV0832XPQK-20