首页 |元器件品牌 | PCB在线计价/下单
首页 > 二极管 > 整流二极管 > 1N4001H-T

1N4001H-T

更新时间：2024-09-18 06:49:20
品牌：MCC
描述：1 Amp Rectifier 50 - 1000 Volts

PDF下载

中文翻译

PCB计价

1N4001H-T 概述

1 Amp Rectifier 50 - 1000 Volts 1安培整流器50 - 1000伏 整流二极管

1N4001H-T 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-41包装说明：O-XALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.27其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-41JESD-30 代码：O-XALF-W2
JESD-609代码：e0元件数量：1
端子数量：2最大输出电流：1 A
封装主体材料：UNSPECIFIED封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：50 V
最大反向恢复时间：2 µs表面贴装：NO
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED

1N4001H-T 数据手册

通过下载1N4001H-T数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
M C C  
1N4001H-T  
THRU  
1N4007H-T  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
High Junction Temperature  
1 Amp Rectifier  
50 - 1000 Volts  
Maximum Ratings  
DO-41  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Typical Thermal Resistance: 25°C/W Junction to Lead at 0.375"  
Lead Length P.C.B. Mounted  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N4001H-T  
1N4002H-T  
1N4003H-T  
1N4004H-T  
1N4005H-T  
1N4006H-T  
1N4007H-T  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
140V  
280V  
420V  
560V  
700V  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
C
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.0A;  
TJ = 25°C*  
DIMENSIONS  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
5.0mA  
300mA  
TJ = 25°C  
TJ = 150°C  
4.10  
2.00  
.70  
1.000  
25.40  
---  
Typical Junction  
Capacitance  
Maximum Reverse  
Recovery Time  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
Trr  
2.0us  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
Revision: 2  
2004/03/30  
M C C  
TM  
Micro Commercial Components  
1N4001H-T thru 1N4007H-T  
Figure 1  
Typical Forward Characteristics  
20  
Figure 2  
10  
6
Forward Derating Curve  
1.2  
1.0  
.8  
4
2
1
.6  
.4  
Amps  
.6  
Amps  
.4  
.2  
25°C  
.2  
.1  
Single Phase, Half Wave  
60Hz Resistive or Inductive Load  
.06  
.04  
0
50  
75  
100  
125  
150  
175  
0
°C  
.02  
.01  
Average Forward Rectified Current - Amperes versus  
Ambient Temperature - °C  
.4  
.6  
1.4  
.8  
1.0  
1.2  
Volts  
Instantaneous Forward Current - Amperes versus  
Instantaneous Forward Voltage - Volts  
Figure 3  
Junction Capacitance  
100  
60  
40  
20  
TJ=25°C  
pF  
10  
6
4
2
1
.1  
.2  
.4  
1
2
10  
20  
200 400  
1000  
4
40  
100  
Volts  
Junction Capacitance - pF versus  
Reverse Voltage - Volts  
www.mccsemi.com  
Revision: 2  
2004/03/30  
1N4001H-T thru 1N4007H-T  
M C C  
TM  
Figure 4  
Typical Reverse Characteristics  
Micro Commercial Components  
Figure 5  
Peak Forward Surge Current  
100  
60  
60  
50  
40  
20  
40  
30  
20  
TA=150°C  
10  
6
Amps  
4
10  
0
2
1
80  
1
60  
100  
4
6
10 20  
40  
8
2
mAmps  
.6  
.4  
Cycles  
Peak Forward Surge Current - Amperesversus  
Number Of Cycles At 60Hz - Cycles  
.2  
TA=25°C  
.1  
.06  
.04  
.02  
.01  
20  
40  
60  
80  
140  
100  
120  
Volts  
Instantaneous Reverse Leakage Current - MicroAmperesversus  
Percent Of Rated Peak Reverse Voltage - Volts  
www.mccsemi.com  
Revision: 2  
2004/03/30  

1N4001H-T 相关器件

型号 制造商 描述 价格 文档
1N4001H-T-A MCC Rectifier Diode, 获取价格
1N4001H-T-AP MCC Rectifier Diode, 获取价格
1N4001H-T-B MCC Rectifier Diode, 获取价格
1N4001H-T-T MCC Rectifier Diode, 获取价格
1N4001H-T-TP MCC Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN 获取价格
1N4001H-TP MCC Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN 获取价格
1N4001H02 RECTRON Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN 获取价格
1N4001H02-1 RECTRON Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN 获取价格
1N4001H02-4 RECTRON Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN 获取价格
1N4001H02-5 RECTRON Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN 获取价格

1N4001H-T 相关文章

  • Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
    2024-09-20
    6
  • Bourns 精密环境传感器产品选型手册(英文版)
    2024-09-20
    9
  • Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
    2024-09-20
    8
  • Bourns GMOV 混合过压保护组件产品选型手册(英文版)
    2024-09-20
    6

    • 热门型号

  • LM358
  • UPC8158
  • XC6105A618
  • 2N5087/D28Z
  • TMM-136-06-S-S-SM-23-P
  • NC7WZ16P6X
  • SDR10KSM
  • STC53K33N07
  • ERG3SG242
  • M2XRP2-J1Z1-R
  • TMM-139-01-G-S-SM
  • 54F20
  • TMP513
  • SZ6A11
  • PEL12S
  • 概述
  • 规格参数
  • 数据手册
    • 2024 ICPDF网 联系我们和版权申明:QQ 272164286