概述
数据手册2N7002T 概述
N-Channel Plastic-Encapsulate Transistor N沟道塑封装晶体管
2N7002T 数据手册
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PDF下载M C C
TM
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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2N7002T
Micro Commercial Components
Features
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Low ON-Resistance and low Input Capacitance
Low Gate Threshold Voltage
N-Channel
Plastic-Encapsulate
Transistor
•
•
•
•
•
•
·
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version
Case Material:Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Marking:K72
SOT-523
x
A
Mechanical Data
D
3
•
•
Case: SOT-523, Molded Plastic
Terminal Connections: See Diagram
C
B
1.GATE
1
2.SOURCE
2
3.DRAIN
E
Maximum Ratings
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
H
G
J
Parameter
Symbol
VDSS
Value
60
Unit
V
K
Drain-Source-Voltage
Drain-Gate Voltage
DIMENSIONS
INCHES
MM
DIM
A
B
MIN
.059
.030
.057
MAX
.067
.033
.069
MIN
1.50
0.75
1.45
MAX
1.70
0.85
1.75
NOTE
R
GSƙ1.0MΩ
VDGR
60
V
C
D
E
G
H
J
.020 Nominal
0.50Nominal
0.90
Gate-Source-Voltage Continuous
Pulsed
±20
±40
VGSS
V
.035
.000
.028
.004
.010
.043
.004
.031
.008
.014
1.10
.000
.70
.100
0.80
.200
.35
.100
.25
K
Drain Current (Note 1) Continuous
Continuous @ 100ꢀ
Pulsed
115
73
800
ID
mA
Total Power Dissipation (Note 1)
mW
150
PD
Note: 1. Valid provided that terminals are kept at specified ambient
temperature.
www.mccsemi.com
1 of 4
Revision: 4
2009/02/01
M C C
2N7002T
TM
Micro Commercial Components
@ TA = 25 C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
60
V
VGS = 0V, ID = 10uA
@ TC
=
25°C
1.0
500
V
DS = 60V, VGS = 0V
µA
nA
@ TC = 125°C
VGS 20V, VDS = 0V
=
IGSS
Gate-Body Leakage
10
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
V
VDS = VGS, ID =250uA
GS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
1.0
2.0
V
Static Drain-Source On-Resistance
2.0
4.4
7.5
13.5
RDS (ON)
ꢀ
ID(ON)
gFS
On-State Drain Current
0.5
80
1.0
A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
mS
Ciss
Coss
Crss
22
11
50
25
pF
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
2.0
5.0
V
DD = 30V, ID = 0.2A,
RL = 150 ohm, VGEN = 10V,
GEN = 25 ohm
tD(ON)
7.0
11
20
20
ns
ns
tD(OFF)
Turn-Off Delay Time
R
Note: 2. Short duration test pulse used to minimize self-heating effect.
www.mccsemi.com
2 of 4
Revision: 4
2009/02/01
M C C
2N7002T
TM
Micro Commercial Components
1
VGS = 5V
0.9
VGS = 4V
VGS = 10,7,6V
0.8
2.2
1.8
1.4
0.7
0.6
VGS = 3V
0.5
0.4
0.3
0.2
0.1
0
VGS = 4V
VGS = 3V
1
VGS = 5, 6, 7, 10V
0.8
0.6
0
0.2
0.4
0.6
1.0
0
1
2
3
4
5
ID, DRAIN-SOURCE CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current
1.2
1.1
2.2
VGS = 10V
ID = 500mA
2
1.8
1.6
1
1.4
1.2
0.9
1
0.8
0.6
0.4
0.8
0.7
0
-50
-25
25
100
125
50
75
150
75
-50
-25
0
25
50
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Fig. 3 Gate Threshold Variation with Temperature
Fig. 4 On-Resistance Variation with Temperature
60
50
5.0
4.5
4.0
3.5
40
30
20
10
0
3.0
2.5
2.0
1.5
ID = 50mA
Ciss
1.0
0.5
0.0
Coss
Crss
10
0
2
4
6
8
0
5
10
20
25
15
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 6 On-Resistance vs. Gate-Source Voltage
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
www.mccsemi.com
3 of 4
Revision: 4
2009/02/01
M C C
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-TP
Tape&Reel;3Kpcs/Reel
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
4 of 4
Revision: 4
2009/02/01
3
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| 2N7002T1 | CALOGIC | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
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| 2N7002T2 | CALOGIC | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
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