2SC3739-B12-TP [MCC]

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN;
2SC3739-B12-TP
型号: 2SC3739-B12-TP
厂家: Micro Commercial Components    Micro Commercial Components
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

文件: 总2页 (文件大小:130K)
中文:  中文翻译
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M C C  
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20736 Marilla Street Chatsworth  
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2SC3739  
Features  
·
·
High Gain Bandwidth Product: fT=200 MHz (Min.)  
NPN Silicon  
Complementary to 2SA1464  
Epitaxial Transistors  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
40  
60  
5.0  
500  
200  
-55 to +150  
-55 to +150  
Unit  
V
V
SOT-23  
A
D
V
mA  
mW  
OC  
OC  
PC  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
B
C
TJ  
TSTG  
F
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
H
G
J
OFF CHARACTERISTICS  
ICBO  
Collector Cutoff Current  
(VCB=40Vdc,IE=0)  
Emitter Cutoff Current  
(VEB=4.0Vdc, IC=0)  
---  
---  
---  
---  
100  
100  
nAdc  
nAdc  
K
IEBO  
DIMENSIONS  
MM  
INCHES  
MIN  
ON CHARACTERISTICS  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(SAT)  
Forward Current Transfer ratio  
---  
---  
(I =150mAdc, VCE=1.0Vdc)  
Forward Current Transfer ratio  
75  
20  
150  
300  
C
(I =500mAdc, VCE=2.0Vdc)  
75  
0.25  
1.0  
---  
0.75  
1.2  
C
F
Collector Saturation Voltage  
G
H
J
(I =500mAdc, IB=50mAdc)  
---  
Vdc  
Vdc  
pF  
C
.085  
.37  
Base Saturation Voltage  
K
(I =500mAdc,IB=50mAdc)  
---  
---  
C
Suggested Solder  
Pad Layout  
Collector Capacitance  
(VCB=10Vdc, I =0, f=1.0MHz)  
Gain Bandwidth product  
(VCE=10Vdc, IE=20mAdc)  
Cob  
fT  
3.5  
8.0  
E
.031  
.800  
200  
---  
---  
400  
---  
---  
---  
35  
225  
275  
MHz  
ns  
ns  
ton  
tstg  
toff  
Turn-on Time  
Storage Time  
Turn-off Time  
VCC=30V,  
IC=150mA  
IB1=IB2=15mA  
.035  
.900  
---  
---  
ns  
.079  
2.000  
inches  
mm  
h
FE CLASSIFICATION  
.037  
.950  
Marking  
hFE1  
B12  
75-150  
B13  
100-200  
B14  
150-300  
.037  
.950  
* Pulse Test PW<350us, duty cycle<2%  
www.mccsemi.com  
Revision: 2  
2003/04/30  
2SC3739  
M C C  
www.mccsemi.com  
Revision: 2  
2003/04/30  

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