30S1-B [MCC]

Rectifier Diode,;
30S1-B
型号: 30S1-B
厂家: Micro Commercial Components    Micro Commercial Components
描述:

Rectifier Diode,

文件: 总2页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
M C C  
30S1  
thru  
30S10  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
3 Amp  
Medium Power  
Silicon Rectifier  
·
·
·
·
·
Glass Passivated Chip  
Economical Series  
High Current Capability  
High Surge Current Capability  
Peak Reverse Voltages Through 1000 Volts  
50 - 1000 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
T-18  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak  
Reverse  
Voltage  
100V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
30S1  
30S2  
---  
---  
70V  
140V  
100V  
200V  
200V  
30S3  
30S4  
30S5  
30S6  
30S8  
---  
---  
---  
---  
---  
300V  
400V  
500V  
600V  
800V  
210V  
280V  
350V  
420V  
560V  
300V  
400V  
500V  
600V  
800V  
A
Cathode  
30S10  
---  
1000V  
700V  
1000V  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 100°C  
Peak Forward Surge  
Current  
Maximum  
IFSM  
80A  
8.3ms, half sine  
C
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 3.0A;  
TJ = 25°C*  
5mA  
10mA  
TJ = 25°C  
TJ = 100°C  
DIMENSIONS  
INCHES  
MIN  
.330  
.130  
.038  
MM  
MIN  
DIM  
A
B
C
D
MAX  
.350  
.145  
.042  
---  
MAX  
8.89  
3.68  
1.06  
---  
NOTE  
Typical Junction  
Capacitance  
CJ  
100pF  
Measured at  
1.0MHz, VR=4.0V  
8.39  
3.31  
0.97  
1.00  
25.40  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  
Revision: 3  
2002/12/31  
30S1 thru 30S10  
M C C  
TM  
Figure 1  
Typical Forward Characteristics  
Micro Commercial Components  
Forward Derating Curve  
Figure 2  
200  
6
5
4
100  
60  
40  
20  
10  
6
Amps  
3
2
1
Amps  
4
2
Single Phase, Half Wave  
60Hz Resistive or Inductive Load  
25°C  
1
.6  
.4  
0
50  
75  
100  
125  
150  
175  
0
°C  
Average Forward Rectified Current - Amperesversus  
Ambient Temperature -°C  
.2  
Figure 4  
Typical Reverse Characteristics  
.1  
.4  
.6  
1.4  
0.8  
1.0  
1.2  
Volts  
100  
60  
Instantaneous Forward Current - Amperesversus  
Instantaneous Forward Voltage - Volts  
40  
20  
10  
6
Figure 3  
4
2
Maximum Non-Repetitive Forward Surge Current  
120  
TJ=100°C  
100  
80  
1
mAmps  
.6  
.4  
60  
Amps  
.2  
.1  
40  
20  
0
.06  
.04  
80  
100  
1
60  
4
6
10 20  
40  
8
2
Cycles  
TJ=25°C  
.02  
.01  
Peak Forward Surge Current - Amperesversus  
Number Of Cycles At 60Hz - Cycles  
20  
40  
60  
80  
140  
100  
120  
Volts  
Instantaneous Reverse Leakage Current - MicroAmperesversus  
Percent Of Rated Peak Reverse Voltage - Volts  
www.mccsemi.com  
Revision: 3  
2002/12/31  

相关型号:

30S1-BP

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
MCC

30S1-TP

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
MCC

30S10

3 AMP MEDIUM POWER SILICON RECTIFIER DIODES
MICROSEMI

30S10

3 Amp Medium Power Silicon Rectifier 50 - 1000 Volts
MCC

30S10-AP

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
MCC

30S10-BP

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
MCC

30S10-TP

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN
MCC

30S10P

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, T-18, 2 PIN
MCC

30S2

3 AMP MEDIUM POWER SILICON RECTIFIER DIODES
MICROSEMI

30S2

3 Amp Medium Power Silicon Rectifier 50 - 1000 Volts
MCC

30S2

SI RECTIFIER, 2A I(O)/I(F) S 5A
NJSEMI

30S2-AP

暂无描述
MCC