BAV20W [MCC]
410mW Small Signal Diodes 120 to 250 Volts; 410mW小信号二极管120至250伏特
| 型号： | BAV20W |
| 厂家： | 
Micro Commercial Components |
| 描述： | 410mW Small Signal Diodes 120 to 250 Volts |
| 文件： | 总3页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
BAV19W
THRU
BAV21W
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
410mW
Small Signal
Diodes
·
·
·
Silicon Epitaxial Planar Diodes
For General Purpose
This diode is also available in other case.
120 to 250 Volts
Mechanical Data
·
·
·
Case: SOD-123, Molded Plastic
Weight: approx. 0.01g
Marking code: BAV19W=A8
BAV20W=T2
SOD123
A
B
BAV21W=T3
Maximum Ratings
Symbol
Rating
Rating
Unit
C
E
Continuous Reverse Voltage
BAV19W
BAV20W
BAV21W
100
150
200
120
200
250
250
200
625
VR
V
Repetitive Peak Reverse Voltage BAV19W
VRRM
IF
BAV20W
BAV21W
V
H
D
Forward DC Current at Tamb=25OC
mA
mA
mA
(1)
Rectified Current (Average) Half Wave
Rectification with Resist. Load at
IF(AV)
IFRM
IFSM
(1)
Tamb=25OC
J
G
Repetitive Peak Forward Current at f>50Hz,
(1)
Tamb=25OC
DIMENSIONS
Surge Forward Current at t<1s, Tj=25OC
Power Dissipation at Tamb=25OC
1.0
410
A
DIM
INCHES
MIN
MM
NOTE
(1)
MAX
.152
.112
.071
.053
.031
-----
.01
MIN
3.55
2.55
1.40
-----
0.30
0.15
-----
-----
MAX
3.85
2.85
1.80
1.35
.78
-----
.25
.15
P
mW
mW
OC
tot
RJA
TJ
TSTG
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature
375
-55 to +150
-55 to +150
A
B
C
D
E
G
H
J
.140
.100
.055
-----
.012
.006
-----
-----
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
VF
Parameter
Forward Voltage
Min
---
---
Typ Max Units
(IF=100mA)
(IF=200mA)
---
---
1.00
1.25
V
.006
IR
Leakage Current
(VR=100V)
BAV19W ---
BAV19W ---
BAV20W ---
BAV20W ---
BAV21W ---
BAV21W ---
---
---
---
---
---
---
100
15
100
15
100
15
nA
uA
nA
uA
nA
uA
SUGGESTED SOLDER
PAD LAYOUT
(VR=100V, Tj=100OC)
(VR=150V)
0.093"
(VR=150V, Tj=100OC)
(VR=200V)
(VR=200V, Tj=100OC)
rf
Dynamic Forward Resistance
---
---
5.0
1.5
---
---
OHM
pF
0.048”
(I =10mA)
F
C
tot
Capacitance
(VR=0, f=1.0MHz)
trr
Reverse Recovery Time
(I =30mA, IR=30mA)
F
0.036”
---
---
50
ns
(Irr=3.0mA, R =100OHMS)
L
*(1) Valid provided that leads are kept at ambient temperature
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M C C
BAV19W thru BAV21W
www.mccsemi.com
M C C
BAV19W thru BAV21W
Ω
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