BAW56DWP [MCC]
DIODE 0.15 A, 75 V, 4 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Signal Diode;![BAW56DWP](http://pdffile.icpdf.com/pdf2/p00291/img/icpdf/BAW56DWP_1764787_icpdf.jpg)
型号: | BAW56DWP |
厂家: | ![]() |
描述: | DIODE 0.15 A, 75 V, 4 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Signal Diode |
文件: | 总3页 (文件大小:462K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
BAW56DW
Micro Commercial Components
Features
•
•
•
•
Fast switching speed
200mW
Switching Diodes
75 Volts
Ultra-Small surface mount package
For general purpose switching applications
High conductance
Mechanical Data
•
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Marking Code: KJC
SOT-363
•
G
C
B
Maximum Ratings
Symbol
VRM
VRRM
VRWM
VR
Rating
Rating
100
Unit
V
A
H
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
75
V
M
K
VR(RMS)
IFM
IO
RMS Reverse Voltage
53
300
150
V
mA
mA
J
F
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
@ t=1.0us
D
L
DIMENSIONS
IFSM
2.0
1.0
A
@ t=1.0s
PD
RJA
Power Dissipation
Thermal Resistance Junction to Ambient Air
200
625
mW
℃/W
℃
INCHES
MM
TJ
Junction Temperature
-55 to +150
-55 to +150
DIM
A
MIN
MAX
MIN
0.10
1.15
2.00
MAX
0.30
1.35
2.20
NOTE
.004
.045
.079
.012
.053
.087
TSTG
Storage Temperature
℃
B
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
C
D
F
.026
0.65Nominal
Symbol
Parameter
Reverse Breakdown Voltage
(IR=2.5µAdc)
Min
Typ
Max
Units
.012
.071
---
.035
.010
.004
.016
.087
.004
.039
.016
.016
0.30
0.40
2.20
0.10
1.00
0.40
0.25
H
J
1.80
---
V(BR)R
75
---
---
V
Forward Voltage (1)
IF=1.0mAdc
K
0.90
0.25
0.10
L
---
---
---
---
---
---
---
---
0.715
0.855
1.0
M
VF
IF=10mAdc
IF=50mAdc
V
IF=150mAdc
1.25
Leakage Current (1)
(VR=75Vdc)
---
---
---
---
---
---
---
---
2.5
50
30
25
uA
uA
uA
nA
(VR=75Vdc, Tj=150℃)
(VR=25Vdc, Tj=150℃)
(VR=20Vdc)
IR
Junction Capacitance
(VR=0, f=1.0MHz)
Reverse Recovery Time
(IF=10mA, IR=10mA, Irr=0.1 x IR
RL=100OHMS)
Cj
trr
---
---
2.0
pF
---
---
4.0
ns
*(1) Short duration test pulse to minimize self-heating effect.
www.mccsemi.com
1 of 3
Revision: 2
2006/05/13
BAW56DW
M C C
TM
Micro Commercial Components
www.mccsemi.com
Revision: 2
2006/05/13
2 of 3
M C C
TM
Micro Commercial Components
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
3 of 3
Revision: 2
2006/05/13
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00248/img/page/BAW56DW-7_1502634_files/BAW56DW-7_1502634_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00248/img/page/BAW56DW-7_1502634_files/BAW56DW-7_1502634_2.jpg)
BAW56DWQ-7-F
Rectifier Diode, 4 Element, 0.15A, 75V V(RRM), Silicon, GREEN, ULRA SMALL, PLASTIC PACKAGE-6
DIODES
©2020 ICPDF网 联系我们和版权申明