BAW56 [MCC]
350mW 75Volt Dual Switching Diode; 为350mW 75Volt双开关二极管
| 型号： | BAW56 |
| 厂家： | 
Micro Commercial Components |
| 描述： | 350mW 75Volt Dual Switching Diode |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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BAW56
Features
·
·
·
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
350mW 75Volt
Dual Switching Diode
A
Pin Configuration
Top View
A 1
C
SOT-23
A
C
D
Maximum Ratings
B
C
·
Operating Temperature: -55°C to +150°C
·
·
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 357K/W Junction To Ambient
F
E
H
G
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Average Rectified
Output Current
Power Dissipation
Peak Forward Surge
Current
VR
IO
75V
150mA
DIMENSIONS
MM
INCHES
MIN
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
PTOT
IFSM
350mW
1.0A
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
t=1s,Non-Repetitive
Maximum
F
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
VF
IR
855mV IFM = 10mA;
TJ = 25°C*
G
H
J
.085
.37
VR=75Volts
TJ = 25°C
TJ = 150°C
K
2.5mA
50mA
Suggested Solder
Pad Layout
.031
.800
Typical Junction
Capacitance
Reverse Recovery
Time
CJ
Trr
2pF
4nS
Measured at
1.0MHz, VR=0V
IF=10mA
.035
.900
VR = 0V
.079
2.000
inches
mm
RL=500W
*Pulse test: Pulse width 300 msec, Duty cycle 2%
.037
.950
.037
.950
www.mccsemi.com
BAW56
M C C
1000
10,000
1000
100
100
10
1.0
10
0.1
VR = 20V
1
0.01
0
100
200
0
1
2
Tj, JUNCTION TEMPERATURE (°C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
Fig. 2 Leakage Current vs Junction Temperature
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