BCW68H [MCC]
PNP Small Signal Transistor 330mW; PNP小信号晶体管耗电330mW
| 型号： | BCW68H |
| 厂家： | 
Micro Commercial Components |
| 描述： | PNP Small Signal Transistor 330mW |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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BCW68H
Features
l Ideally Suited for Automatic Insertion
l 150oC Junction Temperature
PNP Small
Signal Transistor
330mW
l Low Current, Low Frequency
l Epitaxial Planar Die Construction
Mechanical Data
SOT-23
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Marking: DH
A
D
B
C
l Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25oC Unless Otherwise Specified
F
E
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Base Current(DC)
Symbol Value Unit
VCEO
VCBO
VEBO
IC
-45
-60
V
V
H
G
J
K
-5
V
DIMENSIONS
MM
-800
-1000
-100
-200
330
mA
mA
mA
mA
mW
INCHES
MIN
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
ICM
IB
Peak Base Current
IBM
F
G
H
J
Power Dissipation@Ts=79oC
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Soldering Point
Pd
.085
.37
K
(1)
RθJA
285
oC/W
Suggested Solder
Pad Layout
oC/W
RθJS
215
.031
.800
Operating & Storage Temperature Tj, TSTG -55~150 oC
.035
.900
Notes:
.079
2.000
inches
mm
(1) Valid provided that leads are kept at
ambient temperature.
.037
.950
.037
.950
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M C C
BCW68H
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min.
TYP.
Max.
Unit
DC Current Gain(1)
at VCE = 1V, IC = 10mA
at VCE = 2V, IC = 100mA
at VCE = 2V, IC = 500mA
hFE
hFE
hFE
180
250
100
630
Collector-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA
at IC = 500mA, IB = 50mA
VCEsat
VCEsat
–
–
–
–
0.3
1.0
V
V
Base-Emitter Saturation Voltage(1)
at IC = 100mA, IB = 10mA
at IC = 500mA, IB = 50mA
VBEsat
VBEsat
–
–
–
–
1.25
2
V
V
Collector-Emitter Breakdown Voltage
at IC = 10mA, IB = 0
V(BR)CEO
V(BR)CBO
V(BR)EBO
45
60
5
–
–
–
–
–
–
V
V
V
Collector-Base Breakdown Voltage
at IC = 10µA, IB = 0
Emitter-Base Breakdown Voltage
at IE = 10µA, at IC = 0
Collector-Base Cut-off Current
at VCB = 45V, IE = 0
at VCB = 45V, IE = 0, TA = 150°C
ICBO
ICBO
–
–
–
–
20
20
nA
µA
Emitter-Base Cut-off Current
at VEB = 4V, IC = 0
IEBO
fT
–
–
–
–
–
100
6
20
–
nA
MHz
pF
Gain-Bandwidth Product
at V = 10V, I = 20mA, f = 100MH
Z
CE
C
Collector-Base Capacitance
at VCB = 10V, f = 1MHz
CCB
CEB
–
Emitter-Base Capacitance
at VEB = 0.5V, f = 1MHz
60
–
pF
Note: (1) Pulse test: t ≤ 300µs, D = 2%
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