ES1C [MCC]
1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts; 1安培超快速恢复硅整流50到1000伏特
| 型号： | ES1C |
| 厂家： | 
Micro Commercial Components |
| 描述： | 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |
| 文件： | 总3页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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M C C
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ES1A
THRU
ES1M
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ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
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Features
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·
·
·
·
·
For Surface Mount Applications
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1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
·
Operating Temperature: -50°C to +150°C
·
·
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 15°C/W Junction To Lead
DO-214AC
(SMAJ) (High Profile)
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
Maximum Maximum
H
RMS
Voltage
DC
Blocking
Voltage
50V
Cathode Band
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
ES1M
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
ES1M
35V
J
100V
150V
200V
400V
600V
800V
1000V
70V
100V
105V
140V
280V
420V
560V
700V
150V
200V
400V
600V
800V
1000V
A
C
E
D
B
F
Electrical Characteristics @ 25°C Unless Otherwise Specified
G
Average Forward
Current
IF(AV)
1.0A
TJ = 75°C
DIMENSIONS
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
DIM
A
B
C
D
E
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
MAX
2.95
2.25
.20
NOTE
Peak Forward Surge
Current
Maximum
IFSM
30A
8.3ms, half sine
.51
1.40
2.45
5.69
4.57
2.84
Instantaneous
F
G
H
J
Forward Voltage
ES1A-D
.975V
1.35V
1.60V
VF
IR
IFM = 1.0A;
TJ = 25°C*
ES1G-K
ES1M
Maximum DC
SUGGESTED SOLDER
PAD LAYOUT
Reverse Current At
Rated DC Blocking
Voltage
5mA
TJ = 25°C
0.090”
100mA TJ = 100°C
Maximum Reverse
Recovery Time
0.085”
ES1A-D
50ns
Trr
CJ
IF=0.5A, IR=1.0A,
Irr=0.25A
ES1G-K
60ns
ES1M
100ns
Typical Junction
Capacitance
45pF
Measured at
1.0MHz, VR=4.0V
0.070”
*Pulse test: Pulse width 200 msec, Duty cycle 2%
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ES1A thru ES1M
M C C
Figure 1
Typical Forward Characteristics
20
Figure 2
Forward Derating Curve
10
6
2.4
2.2
2.0
4
1.8
1.6
1.4
2
25°C
1
.6
.4
Amps
1.2
Amps
1.0
.8
.6
.2
.4
.2
Single Phase, Half Wave
60Hz Resistive or Inductive Load
.1
.06
.04
0
25
50
75
100
125
150
0
°C
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
.02
.01
.2
.4
1.2
.6
.8
1.0
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
TJ=25°C
pF
10
6
4
2
1
400
1000
.1
.2
.4
1
2
10 20
200
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
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ES1A thru ES1M
M C C
Figure 4
Peak Forward Surge Current
30
Figure 5
New SMA Assembly
25
20
15
Amps
10
Round Lead
Process
5
0
80
100
1
6
60
4
10 20
40
8
2
Cycles
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50W
10W
trr
+0.5A
0
Pulse
Generator
Note 2
-0.25
25Vdc
Oscilloscope
Note 1
1W
-1.0
1cm
Notes:
1. Rise Time = 7ns max.
Set Time Base for 20/100ns/cm
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
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