ES1GE-T [MCC]
Rectifier Diode,;型号: | ES1GE-T |
厂家: | Micro Commercial Components |
描述: | Rectifier Diode, |
文件: | 总4页 (文件大小:144K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M C C
ES1AE
THRU
TM
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
Micro Commercial Components
ES1ME
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
1 Amp Super Fast
Recovery
Features
x
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Silicon Rectifier
50 to 1000 Volts
x
x
High Temp Soldering: 260qC for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
x
x
x
Operating Temperature: -50qC to +150qC
Storage Temperature: -50qC to +150qC
Maximum Thermal Resistance; 15qC/W Junction To Lead
DO-214AC
(SMAE)
MCC
Part
Number
Maximum
Recurrent
Marking Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
Device
H
Cathode Band
ES1AE
ES1BE
ES1CE
ES1DE
ES1GE
ES1JE
ES1KE
ES1ME
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
ES1M
50V
100V
150V
200V
400V
600V
800V
1000V
35V
70V
100V
150V
J
105V
140V
280V
420V
560V
700V
200V
400V
600V
800V
1000V
A
C
E
D
B
Electrical Characteristics @ 25qC Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TJ = 75qC
G
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ES1AE-DE
IFSM
30A
8.3ms, half sine
DIMENSIONS
INCHES
MIN
.079
.050
.002
---
MM
MIN
DIM
A
MAX
.096
.075
.008
.02
MAX
2.44
1.90
.20
NOTE
2.01
1.27
.05
B
C
D
---
.51
E
.030
.189
.157
.090
.060
.208
.180
.115
.76
1.52
5.30
4.57
2.92
VF
.975V
1.35V
1.70V
IFM = 1.0A;
TJ = 25qC*
G
H
4.80
4.00
2.29
ES1GE-JE
ES1KE~ME
J
SUGGESTED SOLDER
PAD LAYOUT
0.090”
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5PA
TJ = 25qC
100PA TJ = 100qC
Maximum Reverse
Recovery Time
ES1AE-DE
0.085”
Trr
CJ
50ns
75ns
100ns
IF=0.5A, IR=1.0A,
Irr=0.25A
ES1GE-KE
ES1ME
Typical Junction
Capacitance
45pF
Measured at
1.0MHz, VR=4.0V
0.070”
*Pulse test: Pulse width 200 Psec, Duty cycle 2%
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Revision: 5
2007/06/19
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ES1AE thru ES1ME
M C C
TM
Figure 1
Typical Forward Characteristics
Micro Commercial Components
Figure 2
Forward Derating Curve
50
2.4
2.2
2.0
ES1AE~DE
10
3.0
1.0
ES1GE~JE
1.8
1.6
1.4
ES1KE~ME
1.2
Amps
1.0
.8
.6
0.1
.01
.4
.2
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
25
50
75
100
125
150
0
.6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
°C
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
TJ=25°C
pF
10
6
4
2
1
400
1000
.1
.2
.4
1
2
10 20
200
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
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Revision: 5
2007/06/19
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ES1AE thru ES1ME
M C C
TM
Figure 4
Peak Forward Surge Current
Micro Commercial Components
30
25
20
15
Amps
10
5
0
80
100
1
6
60
4
10 20
40
8
2
Cycles
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50Ω
10Ω
trr
+0.5A
0
Pulse
Generator
Note 2
-0.25
25Vdc
Oscilloscope
Note 1
1Ω
-1.0
1cm
Notes:
1. Rise Time = 7ns max.
Set Time Base for 20/100ns/cm
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
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Revision: 5
2007/06/19
3 of 4
M C C
TM
Micro Commercial Components
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
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4 of 4
Revision: 5
2007/06/19
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