HDBS101G [MCC]
1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts; 1.0 AMP 。玻璃钝化桥高效整流器50到1000伏特
| 型号： | HDBS101G |
| 厂家： | 
Micro Commercial Components |
| 描述： | 1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
HDBS101G
THRU
HDBS107G
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
1.0 AMP. Glass
Passivated Bridge
High Efficient Rectifier
50 to 1000 Volts
·
·
·
·
High Forward Surge Capability
Ideal for printed circuit boards
High Temperature Soldering: 250oC for 10 seconds
Reliable low cost construction utilizing molded plastic technique
Maximum Ratings
·
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
For Capacitive Load, Derate Current by 20%
SDB-1
-
Maximum
B
D
C
~
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
35V
Maximum DC
Blocking
Voltage
~
MCC
Part Number
HDBS101G
HDBS102G
HDBS103G
HDBS104G
HDBS105G
HDBS106G
HDBS107G
K
50V
50V
Notch in Case
100V
200V
400V
600V
800V
1000V
70V
140V
280V
420V
560V
700V
100V
200V
400V
600V
800V
1000V
A
G
E
H
Electrical Characteristics @ 25°C Unless Otherwise Specified
DIMENSIONS
Average Forward
IF(AV)
1.0 A
T = 40°C
C
INCHES
MIN MAX
MM
Current
DIM
A
B
C
D
E
G
H
MIN
8.13
6.20
1.02
9.80
3.05
0.076
5.00
1.02
MAX
8.50
6.50
1.52
NOTE
.320
.245
.040
.386
.120
.003
.195
.040
.335
.255
.060
.404
.130
.013
.205
.047
8.3ms, half sine
J
Peak Forward Surge
Current
IFSM
50A
T =150oC
10.3
Maximum
3.30
0.33
5.20
1.20
Instantaneous
Forward Voltage
HDBS101G-103G
HDBS104G
HDBS105G-107G
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
K
TYP
VF
1.0V
1.3V
1.7V
IFM = 1.0A;
T = 25°C
C
Suggested Solder Pad
Layout
.047”
IR
5.0mA
500uA
T = 25°C
C
T = 125°C
C
.344”
Maximum Reverse
Recovery Time
HDBS101G-104G
HDBS105G-107G
.060”
T
rr
50ns
75ns
IF=0.5A, IR=1.0A,
Irr=0.25A
.205”
www.mccsemi.com
Version: 3
2003/01/30
HDBS101G thru HDBS107G
M C C
FIG.2- MAXIMUM FORWARD
CURRENT DERATING CURVE
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
1.0
0.5
0
+0.5A
.06" (1.5mm)
PCB
(-)
DUT
(+)
PULSE
0
Copper Pauls
.51" x .51"
(13mm x 13mm)
50Vdc
(approx)
(-)
GENERATOR
(NOTE 2)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
60Hz RESISTIVE OR
INDUCTIVE LOAD
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
20
40
60
80
100
120
140 150
AMBIENT TEMPERATURE. (oC)
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.3- TYPICAL REVERSE CHARACTERISTICS
FIG.4- TYPICAL FORWARD CHARACTERISTICS
10
1000
104G
S
Tj=250C
B
107G
D
100
S
1.0
~H
Tj=1250C
105G
101G
S
S
106G~HDB
B
S
D
HDB
H
HDB
10
0.1
0.01
1.0
Tj=250C
0.1
0.001
0
.2
.4
.6
.8
1.0
1.2
1.4
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
FIG.6- TYPICAL JUNCTION CAPACITANCE
70
60
35
30
50
8.3ms Single Half Sine Wave
JEDEC Method
40
30
20
25
20
H
D
B
S
1
0
1
G
~
Tj=250C
H
D
HDB
B
S
1
S
0
5
G
106G~HDB
15
10
0
S
107G
10
0
1
2
5
10
20
50
100
.1
.5
1
2
5
10
20
50
100 200 500
REVERSE VOLTAGE. (V)
NUMBER OF CYCLES AT 60Hz
www.mccsemi.com
Version: 3
2003/01/30
相关型号：
©2020 ICPDF网 联系我们和版权申明