LLSD101C [MCC]
Schottky Barrier Switching Diode; 肖特基开关二极管
| 型号： | LLSD101C |
| 厂家： | 
Micro Commercial Components |
| 描述： | Schottky Barrier Switching Diode |
| 文件： | 总2页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LLSD101A
THRU
LLSD101C
M C C
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21201 Itasca Street Chatsworth
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Features
l
l
l
l
Low Reverse Recovery Time
Low Reverse Capacitance
Low Forward Voltage Drop
Schottky Barrier
Switching Diode
Guard Ring Construction for Transient Protection
Mechanical Data
l Case: MiniMELF, Glass
MINIMELF
l Terminals: Solderable per MIL -STD-202, Method 208
l Polarity: Indicated by Cathode Band
l Weight: 0.05 grams ( approx.)
Cathode Mark
Maximum Ratings @ 25oC Unless Otherwise Specified
C
Characteristic
Symbol LLSD101A LLSD101B LLSD101C
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
60V
42V
50V
40V
28V
B
RMS Reverse Voltage
VR(RMS)
IFM
35V
A
Forward Continuous Current(Note 1)
15mA
Non-Repetitive Peak @ t<=1.0s
Forward Surge Current @ t=10us
50mA
2.0A
IFSM
DIMENSION
Power Dissipation(Note 1)
Thermal Resistance(Note 1)
Pd
R
400mW
375K/W
-55 to 150oC
DIM
INCHES
MIN
MM
NOTE
MAX
.142
.016
.059
MIN
3.40
.20
MAX
3.60
.40
A
B
C
.134
.008
.055
Operation & Storage Temp. Range Tj, TSTG
Electrical Characteristics @ 25oC Unless Otherwise Specified
1.40
1.50
Charateristic
Symbol Min
Max Unit
Test Cond.
VR =50V
SUGGESTED SOLDER
PAD LAYOUT
Peak
LLSD101A
Reverse LLSD101B
IRM
200
nA VR =40V
VR =30V
-----
0.105
Current
LLSD101C
LLSD101A
LLSD101B
LLSD101C
0.41
0.40
0.39
1.00
0.95
0.90
2.0
IF=1.0mA
IF=1.0mA
Forward
VFM
V
IF=1.0mA
IF=15mA
IF=15mA
IF=15mA
-----
0.075”
Volt. Drop LLSD101A
LLSD101B
LLSD101C
Junction
LLSD101A
Capacitance LLSD101B
LLSD101C
0.030”
Cj
2.1
pF VR =0V, f=1.0MHz
IF=IR =5mA,
-----
2.2
trr
Reverse Recovery Time
1.0
ns
-----
recover to 0.1 I R
Note: 1. Valid provided that electrodes are kept at ambient temperature
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M C C
LLSD101A thru LLSD101C
10
2
1
0
Tj = 25°C
A
B
C
1.0
C
0.1
A
B
0.01
0
0.5
1.0
0
10
20
30
40
50
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Fig. 2 Typ. Junction Capacitance vs Reverse Voltage
Fig. 1 Typical Forward Characteristic
Variations for Primary Conduction
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DIODES
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