MBR1060CT [MCC]
10 Am p Schott ky Barrier Rectifier 30-60 Volts; 上午10点P肖特KY垒整流器30-60伏特
| 型号： | MBR1060CT |
| 厂家： | 
Micro Commercial Components |
| 描述： | 10 Am p Schott ky Barrier Rectifier 30-60 Volts |
| 文件： | 总2页 (文件大小：648K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
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21201 Itasca Street Chatsworth
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MBR1030CT
THRU
MBR1060CT
Features
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
10 Amp
Schottky Barrier
Rectifier
30-60 Volts
Maximum Ratings
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
TO-220AB
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
30V
Maximum Maximum
B
L
RMS
DC
M
Voltage
Blocking
Voltage
C
D
A
K
MBR1030CT MBR1030CT
MBR1035CT MBR1035CT
MBR1040CT MBR1040CT
MBR1045CT MBR1045CT
MBR1050CT MBR1050CT
MBR1060CT MBR1060CT
21V
24.5V
30V
35V
E
F
PIN
2
35V
1
3
40V
45V
50V
60V
28V
40V
45V
50V
60V
31.5V
35V
G
42V
I
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
H
H
Average Forward
Current
IF(AV)
10A
TC = 105°C
PIN 1
PIN 3
PIN 2
CASE
Peak Forward Surge
Current
IFSM
125A
8.3ms, half sine
Maximum Forward
Voltage Drop Per
Element
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ
ꢀ ꢀ ꢀ ꢀ
INCHES
MM
VF
.70V
.80V
.57V
.65V
IFM = 5A
ꢁꢂꢃ
A
B
C
D
E
F
G
H
I
ꢃꢂꢄ
.560
.380
.100
.230
.380
------
.500
.090
.020
.012
.139
.140
.045
.080
ꢃꢅꢆ
ꢃꢂꢄ
14.22
9.65
ꢃꢅꢆ
15.88
10.67
3.43
6.86
10.67
6.35
14.73
2.79
1.14
0.64
ꢄꢇꢈꢉ
MBR1030CT-45CT
.625
.420
.135
25°C
TJ =
IFM = 5A
125°C
MBR1050CT-60CT
MBR1030CT-45CT
MBR1050CT-60CT
2.54
.270
.420
5.84
9.65
TJ =
.250
.580
------
12.70
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
0.1mA TJ = 25°C
15mA
IR
.110
2.29
.045
.025
0.51
0.30
TJ = 125°C
J
K
L
M
.161
3.53
4.09
4.83
1.40
.190
.055
3.56
1.14
Typical Junction
Capacitance
N
.115
2.03
2.92
CJ
Measured at
1.0MHz, VR=4.0V
MBR1030CT-45CT
MBR1050CT-60CT
170pF
220pF
*Pulse test: Pulse width 300 msec, Duty cycle 2%
www. mccsemi.com
M C C
RATING AND CHARACTERISTIC CURVES
MBR1030CT thru MBR1060CT
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
16
150
125
100
75
12
8
50
4
RESISTIVE OR
25
INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
100
TJ = 125 C
MBR1030CT ~ MBR1045CT
10
1.0
0.1
MBR1050CT ~ MBR1060CT
1.0
0.1
0.01
TJ = 25 C
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
0
20
40
60
80
100
120
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
MBR1030CT ~ MBR1045CT
100
MBR1050CT ~ MBR1060CT
TJ = 25 C, f= 1MHz
10
0.1
1
100
4
10
REVERSE VOLTAGE , VOLTS
www.mccsemi.com
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