MBRB1035CT-T [MCC]
Rectifier Diode,;
| 型号： | MBRB1035CT-T |
| 厂家： | 
Micro Commercial Components |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
MBRB1030CT
THRU
MBRB1060CT
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
10 Amp
Schottky
Barrier Rectifier
30 to 60 Volts
Features
·
·
·
·
·
Meatl of Silicon Rectifier, Majority Conducton
Guard ring for transient protection
Low Forward Voltage Drop
High Current Capability, High Efficiency
Low Power Loss
D2-PACK
Maximum Ratings
S
·
·
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
V
A
MCC
Catalog
Number
Maximum
Reccurrent
Peak Reverse
Voltage
30V
Maximum Maximum
1
2
3
G
RMS
Voltage
DC
Blocking
Voltage
30V
B
4
MBRB1030CT
MBRB1035CT
MBRB1040CT
MBRB1045CT
MBRB1050CT
MBRB1060CT
21V
24.5V
28V
D
35V
40V
45V
50V
35V
40V
C
H
31.5V
35V
45V
50V
E
60V
42V
60V
J
K
1
2 , 4
HEATSINK
3
Electrical Characteristics @ 25°C Unless Otherwise Specified
DIMENSIONS
INCHES
MM
Average Forward
Current
IF(AV)
10 A
TC = 95°C
DIM
NOTE
MIN
.320
.380
.160
.020
.045
.095
.096
.014
.090
.575
.045
MAX
MIN
8.13
9.65
4.06
0.51
1.14
2.41
2.43
0.35
2.29
14.60
1.14
MAX
9.14
10.45
4.83
0.89
1.40
2.67
3.03
0.53
2.79
15.80
1.40
A
B
C
D
E
G
H
J
.359
.411
.190
.035
.055
.105
.120
.021
.110
.625
.055
Peak Forward Surge
Current
IFSM
125A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
.55V
IFM = 5A;
TJ = 25°C
K
S
V
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
SUGGESTED SOLDER PAD LAYOUT
IR
0.5mA
TJ = 25°C
.740
18.79
.065
1.65
Inches
mm
Typical Junction
Capacitance
CJ
200pF Measured at
1.0MHz,
.420
10.66
.070
1.78
VR=4.0V
.120
3.05
.330
8.38
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%
www.mccsemi.com
Revision: 4
2006/03/17
M C C
RATING AND CHARACTERISTIC CURVES
MBRB1030CT thru MBRB1060CT
TM
Micro Commercial Components
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
15
150
125
100
75
10
50
5
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
25
0
RESISTIVE OR INDUCTIVE LOAD
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
100
TJ = 125 C
TJ = 125 C
TJ = 100 C
TJ = 25 C
10
1.0
0.1
1.0
0.1
TJ = 25 C
.01
PULSE WIDTH 300us
2% Duty Cycle
.001
140
20
40
60
80
100
120
0
1.1
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
0.1
0.3
0.5
0.7
0.9
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
TJ = 25 C, f= 1MHz
1
10
0.1
100
4
10
REVERSE VOLTAGE , VOLTS
www.mccsemi.com
Revision: 4
2006/03/17
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