MCAC50N03-TP-HF [MCC]
Power Field-Effect Transistor,;型号: | MCAC50N03-TP-HF |
厂家: | Micro Commercial Components |
描述: | Power Field-Effect Transistor, |
文件: | 总4页 (文件大小:541K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MCAC50N03
Features
•
•
•
•
•
•
High Density Cell Desihn for Low RDS(on)
Fully Characterized Avalanche Voltage and Current
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1
N-CHANNEL
Halogen Free Available Upon Request By Adding Suffix "-HF"
MOSFET
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
•
•
•
Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
DFN5060-8L
Thermal Resistance: 3.3°C/W Junction to Ambient
Parameter
Rating
30
Symbol
VDS
Unit
V
Drain-Source Voltage
Gate-Source Volltage
D1
VGS
±20
50
V
TC=25°C
A
ID
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Energy (Note 2)
TC=100°C
30
A
IDM
EAS
PD
200
70
A
•
PIN 1
mJ
W
D
Total Power Dissipation
38
e
B
Note: 1.Pulse Width Limited by Maximum Junction Temperature.
2.EAS Condition: TJ=25°C,VDD=15V,VG=10V,L=0.1mH,Rg=25Ω.
Internal Structure
DIMENSIONS
INCHES
MIN MAX MIN MAX
MM
D
D
D
D
DIM
NOTE
8
7
6
5
A
B
C
D
0.035 0.047 0.90 1.20
0.012 0.020 0.30 0.51
0.007 0.010 0.19 0.25
0.189 0.209 4.80 5.30
D1 0.157 0.173 4.00 4.40
0.232 0.244 5.90 6.20
E1 0.217 0.228 5.50 5.80
1
2
3
4
E
S
S
S
G
0.050
1.27
TYP.
e
F
0.002 0.012 0.05 0.30
F1 0.014 0.030 0.35 0.75
0.002 0.012 0.05 0.30
G1 0.014 0.030 0.35 0.75
G
H
K
0.131 0.154 3.34 3.90
0.030 ----- 0.762 -----
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MCAC50N03
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
V(BR)DSS VGS=0V, ID=250µA
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
Gate-Threshold Voltage(Note 3)
30
33
V
nA
µA
V
IGSS
IDSS
VDS=0V, VGS =±20V
VDS=30V, VGS=0V
VDS=VGS, ID=250µA
VGS=10V, ID=10A
VGS=4.5V, ID=10A
VDS=5V, ID=20A
±100
1
VGS(th)
1
1.5
6.3
9.2
2.3
9
Drain-Source On-Resistance(Note 3)
RDS(on)
mΩ
13
Forward Tranconductance(Note 3)
gFS
15
S
Dynamic Characteristics(Note 4)
Input Capacitance
Ciss
Coss
Crss
Qg
1490
220
135
15
3
VDS=15V,VGS=0V,f=1MHz
VDS=15V,VGS=10V,ID=9A
pF
nC
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain Charge
4.5
10
8
Turn-On Delay Time
Turn-On Rise Time
VDD=15V,ID=10A
ns
VGS=10V,RGEN=1.8Ω
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
30
5
Drain-Source Body Diode Characteristics
IS
VSD
trr
Continuous Body Diode Current
25
1.2
35
A
V
Body Diode Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
IS=10A, VGS=0V
0.85
22
ns
nC
TJ=25°C, IF=10A
di/dt=100A/μs
Qrr
ton
20
12
Intrinsic Turn-On Time is Negligible (Turn-On is Dominated by LS+LD)
Note 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤2%.
4. Guaranteed by Design, Not Subject to Production Testing.
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MCAC50N03
Curve Characteristics
Fig. 1 - Output Characteristics
Fig. 2 - Transfer Characteristics
30
25
20
15
10
5
30
25
20
15
10
5
VDS= 5V
Pulesd
TA=25°C
Pulsed
VGS=10V,5V,4V
VGS=3.0V
TA=125°C
TA=25°C
VGS=2.5V
0
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
Gate to Source Voltage (V)
Drain to Source Voltage (V)
Fig. 4 - IS—VSD
Fig. 3 - RDS(ON)—ID
100
10
30
25
20
15
10
5
TA=25°C
Pulsed
TJ=150°C
1
VGS=4.5V
TJ=25°C
0.1
0.01
VGS=10V
0
20
0
5
10
15
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Drain Current (A)
Source to Drain Voltage (V)
Fig. 6 - Threshold Voltage
Fig. 5 - RDS(ON)—Temperature
1.1
1.8
1.6
1.4
1.2
1.0
0.8
1.0
0.9
0.8
0.7
0.6
ID= 250μA
VGS=10V,10A
0
25
50
75
100
125
150
175
-75
-50
-25
0
25
50
75
100
125
150
175
Junction Temperature (°C)
Temperature (°C)
Rev.3-1-01012019
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MCAC50N03
Ordering Information
Device
Packing
Part Number-TP
Tape&Reel: 2.5Kpcs/Reel
Note : Adding "-HF" Suffix for Halogen Free, eg. Part Number-TP-HF
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