MMBD4448HCDWP [MCC]
DIODE 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Signal Diode;
| 型号： | MMBD4448HCDWP |
| 厂家： | 
Micro Commercial Components |
| 描述： | DIODE 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Signal Diode 二极管 开关 |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
MMBD4448
Features
Surface Mount
Schottky Barrier
Switching Diode
350mW
l
l
l
l
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
Mechanical Data
l Case: SOT-23, Molded Plastic
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: See Diagram
SOT-23
A
D
l Marking: KA3
B
C
Maximum Ratings @ 25oC Unless Otherwise Specified
Characteristic
Symbol
VRM
Value
Unit
V
F
E
Non-Repetitive Peak Reverse Volt.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
VRRM
VRWM
VR
75
V
H
G
J
RMS Reverse Voltage
VR(RMS)
IFM
53
V
mA
mA
A
Forward Continuous Current(Note1)
Average Rectified Output Current
Non-Repetitive Peak @ t<=1.0s
Forward Surge Current @ t=1.0us
Power Dissipation(Note 1)
500
DIMENSIONS
MM
Io
250
INCHES
MIN
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
NOTE
IFSM
2
4
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
A
Pd
R
350
mW
K/W
oC
Thermal Resistance(Note 1)
Operation/Storage Temp. Range
357
F
G
H
J
.100
1.12
.180
.51
Tj, TSTG
-55 to +150
.085
.37
Electrical Characteristics @ 25oC Unless Otherwise Specified
K
Suggested Solder
Pad Layout
.031
.800
Charateristic
Symbol Min
Max
Unit
Test Cond.
IF=5.0mA
IF=10mA
0.62 0.72
Maximum Forward
Voltage Drop
VFM
----- 0.855
V
1
IF=100mA
IF=150mA
VR=75V
.035
.900
1.25
2.5
.079
2.000
inches
mm
uA
Maximum Peak
Reverse Current
IRM
-----
50
30
25
4
uA VR=75V Tj=150oC
uA VR=25V Tj=150oC
nA
VR=20V
.037
.950
Junction Capacitance
Cj
-----
-----
pF VR=0V, f=1.0MHz
ns
.037
.950
Reverse Recovery Time
trr
4
Note: 1. Valid provided that terminals are kept at ambient temperature
2. Trr Test Condition: IF=IR=10mA, Irr=0.1*IR, R=100 OHM
www.mccsemi.com
MMBD4448
M C C
Figure 1
Typical Forward Characteristics
200
Figure 2
100
60
Forward Derating Curve
420
350
280
210
40
20
10
6
MilliAmps
MilliWatts
4
140
70
2
1
25°C
Single Phase, Half Wave
60Hz Resistive or Inductive Load
.6
.4
0
50
75
100
125
150
175
0
°C
.2
Admissable Power Dissipation - MilliWattsversus
Ambient Temperature -°C
.1
.4
.6
1.4
.8
1.0
1.2
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
10
6
4
2
TJ=25°C
pF
1
.6
.4
.2
.1
400
1000
.1
.2
.4
1
2
10 20
200
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
www.mccsemi.com
MMBD4448
M C C
Figure 4
Typical Reverse Characteristics
Figure 5
Peak Forward Surge Current
1000
600
2.4
2.0
400
200
1.6
1.2
0.8
100
60
Amps
40
0.4
0
20
10
80
100
1
60
4
6
10 20
40
8
2
NanoAmps
6
4
Cycles
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
2
1
TA=25°C
.6
.4
TA=100°C
.2
.1
20
40
60
80
140
100
120
TJ
Instantaneous Reverse Leakage Current - NanoAmperesversus
Junction Temperature -°C
www.mccsemi.com
相关型号：
MMBD4448HCQW-7
Rectifier Diode, 4 Element, 0.25A, 80V V(RRM), Silicon, ULTRA SMALL, PLASTIC PACKAGE-5
DIODES
MMBD4448HCQW-TP
Rectifier Diode, 4 Element, 0.25A, 80V V(RRM), Silicon, ROHS COMPLIANT, ULTRA SMALL, PLASTIC PACKAGE-6
MCC
MMBD4448HCQWP
DIODE 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE, ULTRA SMALL, PLASTIC PACKAGE-6, Signal Diode
MCC
©2020 ICPDF网 联系我们和版权申明