MMBT1815-TP [MCC]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN;
| 型号： | MMBT1815-TP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
MMBT1815
Features
NPN EPITAXIAL
·
Collector-Emitter voltage: BVCEO=50V
·
·
·
Collector current up to 150mA
High hFE linearity
Complimentary to MMBT1015
C
SILICON TRANSISTOR
MARKING
HF
B
E
SOT-23
A
Maximum Ratings
B
C
·
·
Junction Temperature: 125°C
Storage Temperature: -55°C to +150°C
D
ꢀ
ABSOLUTE MAXIMUM RATINGS Ta= 25°C Unless Otherwise Specified
ꢀ
F
H
ꢀꢁꢂꢁꢃꢄꢅꢄꢂꢆꢇ
ꢁꢂꢃꢃꢄꢅꢆꢂꢇꢈꢉꢊꢋꢄꢀꢌꢂꢃꢆꢊꢍꢄꢀ
ꢁꢂꢃꢃꢄꢅꢆꢂꢇꢈꢄꢐꢑꢆꢆꢄꢇꢀꢌꢂꢃꢆꢊꢍꢄꢀ
ꢓꢐꢑꢆꢆꢄꢇꢈꢉꢊꢋꢄꢀꢌꢂꢃꢆꢊꢍꢄꢀ
ꢁꢂꢃꢃꢄꢅꢆꢂꢇꢀꢔꢑꢋꢋꢑꢕꢊꢆꢑꢂꢖꢀ
ꢁꢂꢃꢃꢄꢅꢆꢂꢇꢀꢅꢙꢇꢇꢄꢖꢆꢀ
ꢆꢈꢃꢉꢊꢋꢇ
ꢌꢁꢋꢍꢄꢇ
6ꢏꢀ
ꢒꢏꢀ
ꢍꢎꢏꢅꢇ
ꢎꢀ
G
E
ꢎꢀꢁꢂꢃ
ꢎꢀꢄꢂꢃ
ꢎꢄꢁꢂꢃ
ꢎꢀ
DIMENSIONS
5ꢀ
ꢎꢀ
INCHES
MM
DIM
A
B
C
D
E
F
G
H
MIN
MAX
MIN
2.70
2.35
1.70
1.20
0.35
1.05
------
.08
MAX
3.10
2.75
2.10
1.50
0.55
1.35
.10
NOTE
ꢗ
ꢀꢃ
ꢀꢃ
ꢁꢃ
200
ꢛꢒꢏꢀ
ꢒꢏꢀ
ꢐꢘꢀ
ꢐꢜꢀ
ꢐꢜꢀ
.106
.093
.067
.047
.014
.041
------
.003
.122
.108
.083
.059
.022
.053
.004
.008
ꢚ
ꢝꢊꢋꢄꢀꢁꢙꢇꢇꢄꢖꢆꢀ
ꢚ
ꢀꢀ
ꢀꢀ
ꢙꢖꢅꢆꢑꢂꢖꢀ!ꢄꢐꢕꢄꢇꢊꢆꢙꢇꢄꢀ
"ꢆꢂꢇꢊꢍꢄꢀ!ꢄꢐꢕꢄꢇꢊꢆꢙꢇꢄꢀ
!
ꢅꢃ
ꢛꢞꢒꢀ
.20
!
ꢆꢇꢈꢃ
ꢈ5ꢒꢀꢆꢂꢀ$ꢛꢒꢏꢀ
www.mccsemi.com
Revision: 2
2003/04/30
M C C
MMBT1815
ELECTRICAL CHARACTERISTICS Ta= 25 °C Unless Otherwise Specified
Parameter
Symbol
ICBO
IEBO
Test conditions
VCB=60V,IE=0
VEB=5V,Ic=0
MIN TYP MAX UNIT
100 nA
100 nA
Collector cut-off current
Emitter cut-off current
DC current gain(note)
hFE1
VCE=6V,Ic=2mA
130
400
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
VCE(sat)
VBE(sat)
fT
Cob
NF
Ic=100mA,IB=10mA
Ic=100mA,IB=10mA
0.1
0.25
1.0
V
V
VCE=10V,Ic=1.0mA,f=30Hz.........80
VCB=10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=6V
....MHz
pF
2.0
1.0
3.0
1.0
Noise Figure
dB
RG=10kΩ,f=100Hz
CLASSIFICATION OF hFE1
RANK
RANGE
L
H
130-200
200-400
TYPICAL CHARACTERISTIC CURVES
Fig.3 Base-Emitter on Voltage
Fig.1 Static characteristics
Fig.2 DC current Gain
2
100
80
3
10
10
VCE=6V
1
VCE=6V
10
2
I
B=300
µ
A
10
60
40
I
I
I
B
=250
=200
=150
µ
µ
A
A
A
B
1
0
10
B
B
µ
µ
10
20
0
I
=100
A
IB=50 µA
0
-1
10
10
0
4
8
12
16
20
-1
10
0
1
2
3
10
0
0.2
0.4
0.6
0.8
1.0
10
10
10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
10
2
10
10
Ic=10*I
B
V
CE=6V
f=1MHz
3
2
10
V
BE(sat)
I
E=0
10
1
10
2
1
10
0
10
10
VCE(sat)
-1
10
1
0
10
10
3
0
1
2
3
10
-1
10
0
1
2
10
-1
10
0
1
2
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
www.mccsemi.com
Revision: 2
2003/04/30
相关型号：
MMBT1815G-BL-AC3-R
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3
UTC
MMBT1815G-BL-AE3-R
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3
UTC
MMBT1815G-BL-AL3-R
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3
UTC
©2020 ICPDF网 联系我们和版权申明