MMS8550H-TP [MCC]
500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3;
| 型号： | MMS8550H-TP |
| 厂家： | 
Micro Commercial Components |
| 描述： | 500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 光电二极管 晶体管 |
| 文件： | 总1页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MMS8550
Features
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·
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·
·
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SOT-23 Plastic-Encapsulate Transistors
PNP Silicon
Plastic-Encapsulate
Transistor
Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55OC to +150OC
Marking Code: 2TY
Electrical Characteristics @ 25OC Unless Otherwise Specified
SOT-23
Symbol
Parameter
Min
Max
Units
A
OFF CHARACTERISTICS
D
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
40
25
5.0
---
---
---
---
---
Vdc
Vdc
(I =100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
C
B
C
(I =0.1mAdc, IB=0)
C
Emitter-Base Breakdown Voltage
---
Vdc
(I =100uAdc, IC=0)
F
E
E
I
Collector Cutoff Current
0.1
0.1
0.1
uAdc
uAdc
uAdc
CBO
(VCB=40Vdc, I =0)
E
I
Collector Cutoff Current
CEO
H
G
J
(VCE=20Vdc, I =0)
B
IEBO
Emitter Cutoff Current
(VEB=3.0Vdc, I =0)
C
ON CHARACTERISTICS
DIMENSIONS
hFE(1)
DC Current Gain
120
50
---
350
---
---
---
INCHES
MIN
MM
(I =50mAdc, VCE=1.0Vdc)
C
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
NOTE
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
hFE(2)
DC Current Gain
(I =500mAdc, VCE=1.0Vdc)
C
VCE(sat)
VBE(sat)
VEB
Collector-Emitter Saturation Voltage
0.6
1.2
1.4
Vdc
Vdc
Vdc
(I =500mAdc, IB=50mAdc)
C
F
Base-Emitter Saturation Voltage
---
G
H
J
.100
1.12
.180
.51
(I =500mAdc, IB=50mAdc)
C
.085
.37
Base- Emitter Voltage
(IE=100mAdc)
---
K
Suggested Solder
Pad Layout
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
150
---
MHz
(I =20mAdc, VCE=6.0Vdc, f=30MHz)
C
.031
.800
.035
.900
FE (1)
CLASSIFICATION OF H
.079
2.000
inches
mm
Rank
L
H
Range
120-200
200-350
.037
.950
.037
.950
www.mccsemi.com
Revision: 2
2003/04/30
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