MMS9013 [MCC]

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3;
MMS9013
型号: MMS9013
厂家: Micro Commercial Components    Micro Commercial Components
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

光电二极管 晶体管
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MMS9013  
Features  
·
·
·
·
·
·
SOT-23 Plastic-Encapsulate Transistors  
NPN Silicon  
Plastic-Encapsulate  
Transistor  
Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 0.5A  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking Code: J3  
SOT-23  
A
D
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
B
C
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Collector-Base Breakdown Voltage  
40  
25  
5.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
C
F
E
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
H
G
J
I
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
CBO  
(VCB=40Vdc, I =0)  
E
K
I
Collector Cutoff Current  
CEO  
(VCE=20Vdc, I =0)  
DIMENSIONS  
MM  
B
IEBO  
Emitter Cutoff Current  
INCHES  
MIN  
(VEB=5.0Vdc, I =0)  
C
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
ON CHARACTERISTICS  
hFE(1)  
DC Current Gain  
120  
40  
---  
350  
---  
---  
---  
(I =50mAdc, VCE=1.0Vdc)  
C
hFE(2)  
DC Current Gain  
F
G
H
J
(I =500mAdc, VCE=1.0Vdc)  
C
VCE(sat)  
VBE(sat)  
VEB  
Collector-Emitter Saturation Voltage  
0.6  
1.2  
1.4  
Vdc  
Vdc  
Vdc  
.085  
.37  
(I =500mAdc, IB=50mAdc)  
C
K
Base-Emitter Saturation Voltage  
---  
Suggested Solder  
Pad Layout  
(I =500mAdc, IB=50mAdc)  
C
Base- Emitter Voltage  
(IE=100mAdc)  
---  
.031  
.800  
SMALL-SIGNAL CHARACTERISTICS  
.035  
.900  
fT  
Transistor Frequency  
150  
---  
MHz  
(I =20mAdc, VCE=6.0Vdc, f=30MHz)  
C
.079  
2.000  
inches  
mm  
CLASSIFICATION OF HFE (1)  
Rank  
L
H
Range  
120-200  
200-350  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: 2  
2003/04/30  

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