MS860-T [MCC]
Rectifier Diode,;
| 型号： | MS860-T |
| 厂家： | 
Micro Commercial Components |
| 描述： | Rectifier Diode, |
| 文件： | 总3页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
MS820
THRU
MS8100
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20736 Marilla Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Features
·
·
·
·
Low Switching Noise
8 Amp Schottky
Barrier Rectifier
20 to 100 Volts
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Maximum Ratings
DO-201AD
·
·
·
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 30°C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
20V
Maximum Maximum
RMS
DC
Voltage
Blocking
Voltage
D
MS820
MS830
MS835
MS840
MS845
MS860
MS880
MS820
MS830
MS835
MS840
MS845
MS860
MS880
14V
21V
24.5V
28V
31.5V
42V
56V
20V
30V
35V
40V
45V
60V
80V
30V
35V
40V
45V
60V
80V
A
Cathode
Mark
B
D
MS8100
MS8100
100V
70V
100V
Electrical Characteristics @ 25°C Unless Otherwise Specified
C
Average Forward
Current
IF(AV)
8.0A
TA = 120°C
Peak Forward Surge
Current
IFSM
200A
8.3ms, half sine
Maximum
DIMENSIONS
Instantaneous
Forward Voltage
MS820-MS860
MS880-MS8100
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
INCHES
MIN
.287
.189
.048
MM
MIN
7.30
4.80
1.20
25.40
DIM
A
B
C
D
MAX
.374
.208
.052
---
MAX
9.50
5.30
1.30
---
NOTE
VF
IR
.62V
.85V
IFM = 8.0A;
TA = 25°C*
1.000
1.0mA
50mA
TA = 25°C
TA = 100oC
Typical Junction
Capacitance
CJ
550pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 msec, Duty cycle 1%
www.mccsemi.com
Revision: 3
2003/04/30
MS820 thru MS8100
M C C
Figure 1
Typical Forward Characteristics
TM
Micro Commercial Components
100
Figure 2
Forward Derating Curve
60
40
12
10
8
20
MS820-MS860
10
MS80-MS8100
6
4
6
4
2
Amps
2
Amps
1
.6
.4
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
60
100
120
140
160
80
40
.2
°C
25°C
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
.1
.06
.04
.02
.01
1.0
.3
.4
.5
.6
.7
.8
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
1000
600
400
200
TJ=25°C
pF
100
60
40
20
10
.1
.2
.4
1
2
10 20
200 400
1000
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
www.mccsemi.com
Revision: 3
2003/04/30
MS820 thru MS8100
M C C
TM
Figure 4
Typical Reverse Characteristics
Micro Commercial Components
Figure 5
10
6
Peak Forward Surge Current
200
4
175
150
100
75
2
1
Amps
.6
.4
50
0
.2
25°C
80
1
60
100
4
6
10 20
40
8
2
mAmps
.1
Cycles
.06
.04
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
.02
.01
.006
.004
.002
.001
0
120
100
20
40
60
80
Volts
Instantaneous Reverse Leakage Current - MicroAmperesversus
Percent Of Rated Peak Reverse Voltage - Volts
www.mccsemi.com
Revision: 3
2003/04/30
相关型号：
MS860-TP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC
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