MUR110GP-T [MCC]
Rectifier Diode,;
| 型号： | MUR110GP-T |
| 厂家： | 
Micro Commercial Components |
| 描述： | Rectifier Diode, |
| 文件： | 总3页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR105GP
THRU
MUR160GP
M C C
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20736 Marilla Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
1.0 Amp Glass
Passivated Super Fast
Recovery Rectifier
50 to 600 Volts
Features
•
•
•
•
High Surge Capability
Low Forward Voltage Drop
High Current Capability
Super Fast Switching Speed For High Efficiency
Maximum Ratings
•
•
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
DO-41
Maximum
Recurrent
Maximum DC
Blocking
MCC
Maximum
Part Number Peak Reverse RMS Voltage
Voltage
Voltage
MUR105GP
MUR110GP
MUR115GP
MUR120GP
MUR140GP
MUR160GP
50V
35V
70V
105V
140V
280V
420V
50V
100V
150V
200V
400V
600V
100V
150V
200V
400V
600V
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
A
Cathode
Mark
Average Forward
Current
IF(AV)
1.0A
TA = 55°C
B
Peak Forward Surge
Current
IFSM
25A
8.3ms, half sine
D
Maximum
Instantaneous
Forward Voltage
MUR105GP-115GP
MUR120GP-160GP
Maximum DC
VF
I
FM = 1.0A;
.97V
C
1.35V TA = 25°C
Reverse Current At
Rated DC Blocking
Voltage
5.0µA TA = 25°C
IR
50µA
TA = 150°C
Maximum Reverse
Recovery Time
MUR105GP-140GP
MUR160GP
Typical Junction
Capacitance
DIMENSIONS
Trr
CJ
INCHES
MAX
MM
45ns
60ns
IF=0.5A, IR=1.0A,
Irr=0.25A
DIM
A
B
C
D
MIN
.166
.080
.028
1.000
MIN
4.10
2.00
.70
MAX
5.20
2.70
.90
NOTE
.205
.107
.034
---
25.40
---
MUR105GP-115GP
MUR120GP-160GP
15pF
10pF
Measured at
1.0MHz, VR=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
www.mccsemi.com
Revision: 3
2003/04/30
MUR105GP thru MUR160GP
M C C
TM
Micro Commercial Components
Figure 1
Typical Forward Characteristics
20
Figure 2
Forward Derating Curve
10
6
1.5
1.25
1.0
.75
.5
4
2
MUR105GP-115GP
25°C
1
.6
.4
Amps
Amps
.2
MUR120GP-160GP
.25
.1
.06
.04
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
50
75
100
125
150
175
0
°C
.02
.01
Average Forward Rectified Current - Amperes versus
Ambient Temperature - °C
.5
.7
1.5
.9
1.1
1.3
Volts
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
MUR105GP-115GP
MUR120GP-160GP
100
60
40
20
10
TJ=25°C
pF
6
4
2
1
.1
.2
.4
1
2
10 20
200 400
1000
4
40
100
Volts
Junction Capacitance - pF versus
Reverse Voltage - Volts
www.mccsemi.com
Revision: 3
2003/04/30
MUR105GP thru MUR160GP
M C C
TM
Micro Commercial Components
Figure 4
Typical Reverse Characteristics
Figure 5
Peak Forward Surge Current
100
60
30
20
10
0
40
TA=150°C
20
10
6
Amps
4
TA=100°C
2
80
100
1
6
60
1
4
8 10 20
Cycles
40
2
µAmps
.6
.4
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
.2
TA=25°C
.1
.06
.04
.02
.01
2
4
60
80
140
100
120
Volts
Instantaneous Reverse Leakage Current - MicroAmperes versus
Percent Of Rated Peak Reverse Voltage - Volts
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50Ω
10Ω
trr
+0.5A
0
Pulse
Generator
Note 2
-0.25
25Vdc
Oscilloscope
Note 1
1Ω
-1.0
1cm
Notes:
1. Rise Time = 7ns max.
Set Time Base for 20/100ns/cm
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
www.mccsemi.com
Revision: 3
2003/04/30
相关型号：
MUR110GP-TP
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC, PACKAGE-2
MCC
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