PN2222A [MCC]

NPN General Purpose Amplifier; NPN通用放大器
PN2222A
型号: PN2222A
厂家: Micro Commercial Components    Micro Commercial Components
描述:

NPN General Purpose Amplifier
NPN通用放大器

晶体 放大器 小信号双极晶体管
文件: 总3页 (文件大小:99K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
PN2222A  
Features  
·
·
Through Hole Package  
Capable of 600mWatts of Power Dissipation  
NPN General  
Purpose Amplifier  
Pin Configuration  
Bottom View  
C
B
E
Electrical Characteristics @ 25°C Unless Otherwise Specified  
TO-92  
Symbol  
Parameter  
Min  
Max  
Units  
A
E
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
IBL  
Collector-Emitter Breakdown Voltage*  
(IC=10mAdc, IB=0)  
40  
75  
Vdc  
Vdc  
Collector-Base Breakdown Voltage  
(IC=10mAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10mAdc, IC=0)  
B
6.0  
Vdc  
Base Cutoff Current  
20  
10  
nAdc  
nAdc  
(VCE=60Vdc, VBE=3.0Vdc)  
Collector Cutoff Current  
(VCE=60Vdc, VBE=3.0Vdc)  
ICEX  
ON CHARACTERISTICS  
hFE  
DC Current Gain*  
C
(IC=0.1mAdc, VCE=10Vdc)  
(IC=1.0mAdc, VCE=10Vdc)  
(IC=10mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=1.0Vdc)  
(IC=500mAdc, VCE=10Vdc)  
Collector-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
35  
50  
75  
100  
50  
40  
300  
VCE(sat)  
0.3  
1.0  
Vdc  
Vdc  
D
VBE(sat)  
0.6  
1.2  
2.0  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Current Gain-Bandwidth Product  
(IC=20mAdc, VCE=20Vdc, f=100MHz)  
Output Capacitance  
(VCB=10Vdec, IE=0, f=100kHz)  
Input Capacitance  
(VBE=0.5Vdc, IC=0, f=100kHz)  
300  
MHz  
pF  
G
Cobo  
Cibo  
NF  
8.0  
25  
DIMENSIONS  
pF  
Noise Figure  
(IC=100mAdc, VCE=10Vdc, RS=1.0kW  
f=1.0kHz)  
INCHES  
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MM  
MIN  
4.0  
dB  
DIM  
A
B
C
D
MAX  
MAX  
4.70  
4.70  
---  
NOTE  
.185  
.185  
---  
.020  
.145  
.105  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
SWITCHING CHARACTERISTICS  
td  
tr  
ts  
tf  
0.63  
3.68  
2.67  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(VCC=30Vdc, VBE=0.5Vdc  
IC=150mAdc, IB1=15mAdc)  
(VCC=30Vdc, IC=150mAdc  
IB1=IB2=15mAdc)  
10  
25  
225  
60  
ns  
ns  
ns  
ns  
E
G
*Pulse Width £ 300ms, Duty Cycle£ 2.0%  
www.mccsemi.com  
M C C  
PN2222A  
Collector Current vs  
Collector-Emitter Voltage  
DC Current Gain vs Collector Current  
VCE = 5.0V  
480  
8
6
4
2
35mA  
400  
320  
240  
160  
80  
30mA  
25mA  
20mA  
15mA  
IC - (mA)  
hFE  
10mA  
5mA  
0
20  
30  
40  
50  
10  
0.1  
10  
100  
1
VCE- (V)  
IC (mA)  
Maximum Power Dissipation vs  
Ambient Temperature  
Collector Current vs  
Collector-Emitter Voltage  
800  
600  
400  
200  
0
250  
200  
150  
100  
50  
IB = 4mA  
IB = 3mA  
TO-92  
PD(MAX) - (mW)  
IC - (mA)  
IB = 2mA  
IB = 1mA  
SOT-23  
50  
100  
150  
200  
0
.5  
1.0  
1.5  
2.0  
0
TA - (°C)  
VCE - (V)  
Contours of Constant Gain  
Input and Output Capacitance vs  
Reverse Bias Voltage  
Bandwidth Product (f )  
T
24  
20  
16  
12  
12  
10  
f = 1.0MHz  
CIB  
8
6
pF  
VCE - (V)  
8
4
0
COB  
4
2
0.1  
1.0  
10  
100  
0.1  
1.0  
10  
IC - (mA)  
*50MHz increments from 150  
to 250MHz and 260MHz  
Volts - (V)  
www.mccsemi.com  
M C C  
PN2222A  
Base Saturation Voltage vs  
Collector Current  
Collector Saturation Voltage vs  
Collector Current  
1.4  
1.4  
1.0  
.6  
IC/IB = 10  
1.0  
.6  
VCE(SAT) - (V)  
VBE(SAT) - (V)  
hfe=10  
.1  
.1  
TA = 125°C  
hfe=20  
.06  
.06  
TA = 25°C  
.01  
.01  
1.0  
1000  
1.0  
10  
0.1  
10  
IC - (mA)  
100  
100  
IC - (mA)  
Base Saturation Voltage vs  
Collector Current  
Collector Saturation Voltage vs  
Collector Current  
14  
10  
6
4
1
IC/IB = 10  
TA = 25°C  
.6  
VBE(SAT) - (V)  
VCE(SAT) - (V)  
1
.1  
TA=25°C  
hfe=20  
0.6  
.06  
hfe=10  
10  
TA=125°C  
0.1  
.01  
1.0  
1000  
10  
0.1  
1.0  
100  
100  
IC - (mA)  
IC - (mA)  
Switching Times vs  
Collector Current  
1000  
100  
I
B1 = IB2 = IC/10  
ts  
T - (ns)  
tr  
10  
tf  
td  
1.0  
1.0  
10  
IC - (mA)  
100  
www.mccsemi.com  

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