RA253 [MCC]
25.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts; 25.0安培大电流塑料硅整流50到1000伏特
| 型号： | RA253 |
| 厂家： | 
Micro Commercial Components |
| 描述： | 25.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RA251
THRU
RA257
M C C
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21201 Itasca Street Chatsworth
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Features
25.0 Amp High
Current Plastic Silicon
Rectifier
l
Plastic Material Used Carriers Underwrites Laboratory
Classification 94V-O
l
Low Cost Construction Utilizing Void-free Molded Plastic
Technique
50 to 1000 Volts
l
l
High Surge Capability
Diffused Junction
Maximum Ratings
RA
l
Operating & Storage Temperature: -50oC to +175oC
For Capacitive Load, Derate Current by 20%
Maximum
l
A
Maximum
DC
Recurrent
Peak
Reverse
MCC Part
Number
Maximum
RMS Voltage Blocking
Voltage
Voltage
50V
100V
200V
400V
RA251
RA252
RA253
RA254
35V
70V
140V
280V
50V
100V
200V
400V
RA255
RA256
RA257
600V
800V
420V
560V
700V
600V
800V
E
C
1000V
1000V
Electrical Characteristics @ 25oC Unless Otherwise Specified
D
B
Average Forward
IF(AV)
25.0A
400A
TC=150oC
Current
Peak Forward Surge
Current
8.3ms half
sine
IFSM
Maximum
Instantaneous
Forward Voltage
DIMENSION
DIM INCHES MM
IFM=25.0A
TA=25oC
VF
1.1V
NOTE
MIN MAX MIN MAX
.380 .410 9.70 10.40
.165 .185 4.19 4.70
.215 .225 5.50 5.70
.235 .250 6.00 6.40
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
A
B
C
D
E
IR
5.0uA
TC=25oC
IF=0.5A,
IR=1.0A,
Irr=0.25A
Typical Reverse
Recovery Times
-----
5o
-----
5o NOM
trr
3.0us
Measured at
1.0MHz,
VR=4.0V
Typical Junction
Capacitance
Cj
300pF
www.mccsemi.com
M C C
RA251 thru RA257
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
40
30
600
8.3ms Single Half Sine Wave
JEDEC Method
HALF SINE WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
400
300
Tj=250C
200
Tj=1500C
20
cycle
100
80
10
0
60
125
135
145
155
165
175
1
10
100
CASE TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
100
60
40
100
20
10
6
4
10
2
1
1.0
0.6
Tj=250C
0.4
Tj=250C
PULSE WIDTH-300
2% DUTY CYCLE
S
0.2
0.1
0.1
0.6
1.0
1.4
1.8
2.2
2.6
0
20
40
60
80
100
120
140
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
1000
500
Tj=250C
100
50
f=1.0MHz
Vsig=50mVp-p
1
50
10
REVERSE VOLTAGE. (V)
100
2
5
20
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相关型号：
RA253GP-BP
Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, RA, 2 PIN
MCC
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