S50440(M) [MCC]
Rectifier Diode, 1 Phase, 1 Element, 300A, 400V V(RRM), Silicon, DO-9, DO-9, 1 PIN;型号: | S50440(M) |
厂家: | Micro Commercial Components |
描述: | Rectifier Diode, 1 Phase, 1 Element, 300A, 400V V(RRM), Silicon, DO-9, DO-9, 1 PIN 二极管 |
文件: | 总1页 (文件大小:175K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
S/R50440(M)
Features
•
•
•
•
Molybdenum Preform used for Internal Soldering
High Voltages Rating up to 400 Volts
High Surge Current Capabilities
Standard Polarity: Stud is Cathode
Reverse Polarity: Stud is Anode
S50440(M) Marking: MCC S50440(M)
300 Amp Rectifier
400 Volts
•
•
R50440(M) Marking: MCC R50440(M)
DO-9
Maximum Ratings
•
•
Operating Temperature: -40℃ to +180℃
Storage Temperature: -40℃ to +180℃
Maximum
Recurrent
Peak Reverse RMS Voltage
Voltage
Maximum DC
Blocking
MCC Part
Number
Maximum
Voltage
S/R50440
400V
280V
400V
Electrical Characteristics @ 25℃ Unless Otherwise Specified
Average Forward
Current
TC = 153℃
IF(AV)
300A
half sine
8.3ms, half sine
Peak Forward Surge
Current
IFSM
5500A
TJ = 200℃
DIMENSIONS
Maximum
Instantaneous
Forward Voltage
I
FM = 1000A;
INCHES
MIN MAX
3/4-16UNF-2A*
MM
VF
1.40V
NOTE
Note
TC = 25℃
DIM
A
MIN
MAX
3/4-16UNF-2A*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
B
----
----
.820
1.120
1.080
8.170
----
----
21.0
TC = 25℃
250µA
IR
C
D
E
---
---
28.5
----
27.5
7.390
.370
----
190
9.50
----
210
----
Maximum I2t for
Fusing
125990
A2S
I2t
Less than 8.33ms
F
G
H
J
.750
19.0
0.330
8.50
--
--
.160
--
--
4.0
K
1.530
39.0
L
-----
C.S.35
MM2
Note:S/R50440M: M indicates Metric STUD-M20
www.mccsemi.com
Revision: 3
2005/08/08
相关型号:
S50440E3
Rectifier Diode, 1 Phase, 1 Element, 300A, 400V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN
MICROSEMI
S50440TS
Rectifier Diode, 1 Phase, 1 Element, 300A, 400V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN
MICROSEMI
S50460TS
Rectifier Diode, 1 Phase, 1 Element, 300A, 600V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN
MICROSEMI
S50480TSE3
Rectifier Diode, 1 Phase, 1 Element, 300A, 800V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明