SBL1040CT-B [MCC]
Rectifier Diode,;
| 型号： | SBL1040CT-B |
| 厂家： | 
Micro Commercial Components |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：740K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
SBL1020CT
THRU
Micro Commercial Components
SBL10100CT
Features
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
10 Amp
Schottky Barrier
Rectifier
20 to 100 Volts
Maximum Ratings
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
TO-220AB
:
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Maximum Maximum
B
L
RMS
DC
M
C
Voltage
Blocking
Voltage
D
Reverse
Voltage
20V
A
K
E
F
SBL1020CT SBL1020CT
SBL1030CT SBL1030CT
SBL1040CT SBL1040CT
SBL1050CT SBL1050CT
SBL1060CT SBL1060CT
14
21
28
35
42
20V
30V
40V
50V
60V
PIN
30V
40V
50V
60V
G
SBL1080CTSBL1080CT
SBL10100CTSBL10100CT
80V
100V
56
70
80V
100V
I
J
N
H
H
PIN 1
PIN 3
PIN 2
CASE
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
10A
TC = 100°C
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ
ꢀ ꢀ ꢀ ꢀ
INCHES
MM
Peak Forward Surge
Current
IFSM
150A
8.3ms, half sine
ꢁꢂꢃ
A
B
ꢃꢂꢄ
.560
.380
.100
ꢃꢅꢆ
ꢃꢂꢄ
14.22
9.65
ꢃꢅꢆ
15.88
10.67
3.43
ꢄꢇꢈꢉ
.625
.420
.135
C
2.54
D
E
F
G
H
I
J
K
L
.230
.380
------
.500
.090
.020
.012
.139
.140
.045
.270
.420
.250
.580
.110
.045
.025
.161
.190
.055
5.84
9.65
------
12.70
2.29
0.51
0.30
3.53
3.56
1.14
2.03
6.86
10.67
6.35
14.73
2.79
1.14
0.64
4.09
4.83
1.40
Maximum Forward
Voltage Drop Per
VF
IR
.55V
IFM = 10 A mper
1020CT-1040CT
1050CT-1060CT
1080CT-10100CT
Element
TA =
25°C
.75V
.85V
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
M
N
.080
.115
2.92
0.5mA TJ = 25°C
50mA TJ = 125C
*Pulse test: Pulse width 300 msec, Duty cycle 1%
www.mccsemi.com
Revision: 4
2004/10/07
M C C
SBL1020CT thru SBL10100CT
TM
Figure 1
Micro Commercial Components
Typical Reverse Characteristics
Figure 2
Typical Forward Characteristics
10
6
100
1050CT-1060CT
60
4
40
2
1
20
1020CT-1040CT
10
6
.6
.4
4
1080-10100CT
.2
.1
2
TJ=25°C
25°C
mAmps
1
Amps
.06
.04
.6
.4
.02
.01
.2
.1
.06
.04
.006
.00
.002
.001
.02
.01
20
75
100
50
175
125 150
.
.3
.4
.5
.8
2
.6
.7
Volts
Volts
Instantaneous Reverse Leakage Current - MicroAmperesversus
Percent Of Rated Peak Reverse Voltage - Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Forward Derating Curve
10
9
Figure 4
Peak Forward Surge Current
150
125
100
75
8
7
6
Amps
Amps
50
25
5
0
Single Phase, Half Wave
80
1
60
100
4
6
10 20
40
8
2
60Hz Resistive or Inductive Load
Cycles
0
0
75
°C
25
100
125
50
150
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
www.mccsemi.com
Revision: 4
2004/10/07
相关型号：
SBL1040CT-BP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
SBL1040CT-HE3/45
DIODE 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
SBL1040CTP
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN
MCC
SBL1040CTP-G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 40V V(RRM), Silicon, TO-220AB, ITO-220S, 3 PIN
DIODES
©2020 ICPDF网 联系我们和版权申明