SD103C [MCC]

Small Signal Schottky Diodes; 小信号肖特基二极管
SD103C
型号: SD103C
厂家: Micro Commercial Components    Micro Commercial Components
描述:

Small Signal Schottky Diodes
小信号肖特基二极管

小信号肖特基二极管
文件: 总3页 (文件大小:123K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SD103A  
THRU  
SD103C  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
l
l
l
Low Reverse Recovery Time  
Low Reverse Capacitance  
Low Forward Voltage Drop  
Small Signal  
Schottky Diodes  
l Guard Ring Construction for Transient Protection  
Mechanical Data  
l Case: DO-35, Glass  
DO-35  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: Indicated by Cathode Band  
Maximum Ratings @ 25oC Unless Otherwise Specified  
D
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol SD103A SD103B SD103C  
VRRM  
VRWM  
VR  
40V  
28V  
30V  
20V  
14V  
A
Cathode  
Mark  
VR(RMS)  
RMS Reverse Voltage  
21V  
15A  
B
Maximum sigle cycle surge 60Hz  
sine wave  
IFSM  
D
Power Dissipation(Note 1)  
Pd  
400mW  
Thermal Resistance, Junction to  
Ambient  
R
300K/W  
125oC  
C
Junction Tmperature  
Tj  
Operation/Storage Temp. Range  
TSTG  
-55 to +150oC  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
DIMENSIONS  
Charateristic  
SD103A  
Leakage SD103B  
Current SD103C  
Symbol Type Max Test Condition  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
5.0uA  
VR=30V  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
---  
---  
IR  
-----  
-----  
5.0uA VR=20V  
5.0uA VR=10V  
2.00  
.52  
---  
---  
1.000  
25.40  
0.37V  
Maximum Forward  
Voltage Drop  
VFM  
IF=20mA  
0.60V IF=200mA  
-----  
Junction Capacitance  
Cj  
50pF  
10ns  
VR=0V, f=1.0MHz  
IF=IR=50mA, recover to  
200mA/0.1IR  
-----  
Reverse Recovery Time  
trr  
Note: 1. Valid provided that electrodes are kept at ambient temperature  
www.mccsemi.com  
M C C  
SD103A thru SD103C  
Figure 1. Typical variation of forward current vs. Forward.  
Voltage for primary conduction through the  
schottky barrier  
Figure 2. Typical high current forward  
conduction curve t  
p
=300ms,duty cycle=2%  
F
I (mA)  
A
ꢃꢀ  
j
T= 25 C  
ꢃꢀ  
ꢃꢀ  
I
F
I
F
ꢀꢃ  
ꢃꢀ  
ꢀꢁ  
ꢃꢀ  
ꢀꢁꢂ  
ꢃꢇ  
ꢀꢁꢂ  
ꢃꢁꢂꢇ  
V
F
V
F
Figure 3. Typical non repetitive forward surge  
current versus pulse width  
A
ꢂꢀ  
mA  
ꢃꢀ  
ꢃꢄꢂꢈꢉ  
ꢆꢀ  
ꢃꢀꢀꢈꢉ  
ꢃꢀ  
ꢊꢂꢈꢉ  
ꢅꢀ  
ꢃꢀ  
ꢂꢀꢈꢉ  
ꢄꢂꢈꢉ  
I
F
I
F
ꢄꢀ  
ꢃꢀ  
ꢀꢃ  
ꢃꢀ  
ꢀꢂ  
ꢀꢁ  
ꢀꢃ  
ꢃꢀ  
ꢃꢀ  
ꢄꢀ  
ꢅꢀ  
ꢆꢀ  
ꢂꢀꢇ  
ꢃꢀ  
ꢃꢀ  
ꢃꢀ  
ꢃꢀ  
ꢃꢀ  
ms  
t
p
V
R
www.mccsemi.com  
M C C  
SD103A thru SD103C  
Figure 5. Blocking deration versus temperature  
at various average forward currents  
V
ꢅꢀ  
ꢄꢀ  
ꢁꢀꢀꢆꢇ  
ꢃꢀ  
ꢂꢀꢀꢆꢇ  
ꢄꢀꢀꢆꢇ  
V
R
ꢂꢀ  
ꢁꢀ  
ꢁꢀꢀ  
ꢂꢀꢀꢈ  
T
A
Figure 6. Typical capacitance versus  
reverse voltage  
pF  
ꢁꢀꢀ  
ꢁꢀ  
C
tot  
ꢁꢀ  
ꢂꢀ  
ꢃꢀ  
ꢄꢀ  
ꢅꢀꢉ  
www.mccsemi.com  

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