SF24GP [MCC]
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15, DO-15, 2 PIN, Rectifier Diode;
| 型号： | SF24GP |
| 厂家： | 
Micro Commercial Components |
| 描述： | DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15, DO-15, 2 PIN, Rectifier Diode |
| 文件： | 总3页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
SF21G
THRU
SF26G
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
2.0 Amp Super Fast
·
·
·
·
High reliability
High current capability
Low forward voltage drop
High surge capability
Glass Passivated
Rectifier
50 to 400 Volts
Maximum Ratings
·
·
·
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
For capacitive load, derate current by 20%
DO-15
Maximum
Maximum
RMS
Voltage
Maximum DC
Blocking
MCC
Part Number
Recurrent
Peak Reverse
Voltage
Voltage
SF21G
SF22G
SF23G
SF24G
SF25G
SF26G
50V
100V
150V
200V
300V
400V
35V
70V
105V
140V
210V
280V
50V
100V
150V
200V
300V
400V
D
A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Cathode
Mark
Average Forward
IF(AV)
2.0A
T = 55°C
C
Current
B
Peak Forward Surge
Current
IFSM
50A
8.3ms, half sine
D
Maximum
Instantaneous
Forward Voltage
SF21G-SF24G
SF25G-SF26G
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
SF21G-SF24G
SF25G-SF26G
I
FM = 2.0A;
C
VF
C
T = 25°C
0.95V
1.3V
5.0uA
100uA
T = 25°C
T = 125°C
C
IR
C
DIMENSIONS
INCHES
MIN
.230
.104
.026
MM
MIN
5.80
2.60
.70
DIM
A
B
C
D
MAX
.300
.140
.034
---
MAX
7.60
3.60
.90
NOTE
Measured at
1.0MHz, VR=4.0V
CJ
60pF
30pF
1.000
25.40
---
Maximum Reverse
Recovery Time
IF=0.5A, IR=1.0A,
IRR=0.25A
TRR
35nS
Pulse Test: Pulse width 300 usec, Duty cycle 1%.
www.mccsemi.com
Revision: 1
2005/08/04
SF21G thru SF26G
M C C
Figure 1
Typical Reverse Characteristics
Figure 2
Typical Forward Characteristics
20
10
6
1000
4
2
Tj=150C
100
1
.6
.4
Amps
Tj=125C
uAmps
10
.2
.1
.06
.04
1
Tj=25C
.02
.01
60
120
.6
1.4
.4
20
40
80
100
140
.8
1.0
1.2
0
Volts
Volts
Instantaneous Forward Current - Amperes versus
Instantaneous Reverse Current - uAmperesversus
Percent of Rated Peak Reverse Voltage - %
Instantaneous Forward Voltage - Volts
Figure 3
Forward Derating Curve
3.0
2.0
1.5
Amps
1.0
0.5
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
25
50
75
°C
100
125
150
0
Average Forward Rectified Current Per Leg - Amperes versus
Case Temperature - °C
www.mccsemi.com
Revision: 1
2005/08/04
M C C
SF21G thru SF26G
Figure 4
Figure 5
Typical Junction Capacitance
Maximum Non-repetitive Forward Surge Current
150
60
125
100
50
8.3ms Single Half Sine Wave
JEDEC Method
40
75
50
30
20
25
0
10
0
1
.1
.5
1
2
5
10 20
50
100 200 500 1000
2
5
10
20
50
100
REVERSE VOLTAGE. (V)
NUMBER OF CYCLES AT 60Hz
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50W 10W
trr
+0.5A
0
Pulse
Generator
Note 2
-0.25
25Vdc
1W
Oscilloscope
Note 1
-1.0
1cm
Set Time Base for 20/100ns/cm
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
www.mccsemi.com
Revision: 1
2005/08/04
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