SF502GP-BP [MCC]
Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-201AD, HERMETIC SEALED PACKAGE-2;
| 型号： | SF502GP-BP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-201AD, HERMETIC SEALED PACKAGE-2 |
| 文件： | 总2页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
SF500 G P
thru
SF504 G P
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20736 Marilla Street Chatsworth
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$ꢉ%ꢒꢅ ꢅ ꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
·
·
·
·
Low forward voltage, high current capability
5 Amp Surper Fast
Recovery Rectifiers
50 - 400Volts
Hermetically sealed
High surge capability
Superfast recovery times-epitaxial construction
Maximum Ratings
DO-201AD
·
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 25.0°C/W Junction To Lead
Microsemi
Catalog
Number
Device
Marking
Maximum
Reccurrent
Peak
Reverse
Voltage
50V
Maximum Maximum
RMS
DC
Voltage
Blocking
Voltage
D
SF500GP SF500GP
SF501GP SF501GP
SF502GP SF502GP
SF503GP SF503GP
SF504GP SF504GP
35V
70V
140V
210V
280V
50V
100V
200V
300V
400V
100V
200V
300V
400V
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
IF(AV)
5.0A
TA = 55°C
C
IFSM
150A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
IR
.95V
1.25V
IFM = 5.0A;
TA = 25°C*
DIMENSIONS
SF500~SF502
SF503~SF504
INCHES
MIN
.287
MM
MIN
7.30
4.80
1.20
25.40
DIM
A
B
MAX
.374
.208
MAX
9.50
5.30
NOTE
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
5.0uA
TA = 25°C
.189
C
D
.048
1.000
.052
---
1.30
---
300uA
TA = 125°C
Maximum Reverse
Recovery Time
Typical Junction
Capacitance
Trr
CJ
35nS
45pF
Test Conditions
IF=.5A,IR=1A,Irr=.25A
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 msec, Duty cycle 2%
www.mccsemi.com
Revision: 3
2003/04/30
M C C
TM
SF500GP thru SF504GP
Micro Commercial Components
trr
+0.5A
8.0
6.0
4.0
2.0
0
0
ON HEAT SINK
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
ON PCB
-1.0
1cm
SET TIME
BASE FOR
50
75
100
125
150
175
200
Source Impedance = 50 Ohms
℃
AMBIENT TEMPERATURE,
50 ns/cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
100
SF500GP ~ SF502GP
10
5.0
4.0
3.0
2.0
1.0
0
SF503GP ~ SF504GP
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
NSTANTANEOUS FORWARD VOLTAGE, VOLTS
℃
CASE TEMPERATURE,
Fig. 3-MAXIMUM AVERAGE FORWARD CCURRENT
RATING
Fig. 4-FORWARD CURRENT DERATING CURVE
200
150
100
TJ = 25
f = 1.0MHz
Vsig = 50mVp-p
125
75
8.3ms SINGLE HALF SINE
10
5
WAVE JEDEC METHOD
35
1
5
10
50
100
1
10
REVERSE VOLTAGE, VOLTS
100
NUMBER OF CYCLES AT 60Hz
Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT
Fig. 6-TYPICAL JUNCTION CAPACITANCE
www.mccsemi.com
Revision: 3
2003/04/30
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