SI3420-TP [MCC]
Small Signal Field-Effect Transistor,;
| 型号： | SI3420-TP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总4页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
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TM
Micro Commercial Components
SI3420
Features
N-Channel
Enhancement Mode
•
•
•
•
•
High dense cell design for extremely low RDS(ON)
Rugged and reliable
Lead free product is acquired
SOT-23 Package
Field Effect Transistor
Marking Code: R20
·
·
·
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
SOT-23
A
O
Maximum Ratings @ 25 C Unless Otherwise Specified
D
3
1.GATE
Symbol
VDS
ID
IDM
VGS
Parameter
Drain-source Voltage
Rating
20
6
25
ꢁ12
0.35
357
Unit
V
A
A
V
2. SOURCE
B
C
Drain Current-Continuous
Drain Current-Pulsed a
Gate-source Voltageꢀ
3. DRAIN
1
2
F
E
PD
Total Power Dissipation
W
R/W
R
Thermal Resistance Junction to Ambientb
R
TJ
E
JA
Operating Junction Temperature
Storage Temperature
-55 to +150
-55 to +150
TSTG
R
H
G
J
K
DIMENSIONS
MM
INCHES
MIN
DIM
A
B
MAX
MIN
MAX
3.04
2.64
NOTE
Internal Block Diagram
.110
.083
.120
.104
2.80
2.10
C
D
E
F
G
H
J
.047
.035
.070
.018
.0005
.035
.003
.015
.055
.041
.081
.024
.0039
.044
.007
.020
1.20
.89
1.78
.45
.013
.89
.085
.37
1.40
1.03
2.05
.60
.100
1.12
.180
.51
D
K
Suggested Solder
Pad Layout
.031
.800
G
.035
.900
S
.079
2.000
inches
mm
.037
.950
.037
.950
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1 of 4
Revision: A
2014/11/12
M C C
TM
SI3420
Electrical Characteristics TA = 25 C unless otherwise noted
Micro Commercial Components
Parameter
STATIC PARAMETERS
Symbol
Test Condition
Min
Typ
Max
Units
Drainꢀsource breakdown voltage
Zero gate voltage drain current
Gateꢀbody leakage current
Gate threshold voltage
V (BR) DSS
IDSS
VGS = 0V, ID =250ꢁA
VDS =16V,VGS = 0V
VGS =±12V, VDS = 0V
VDS =VGS, ID =250ꢁA
VGS =10V, ID =6.0A
20
V
u A
nA
V
1
±100
3
IGSS
VGS(th)
0.5
7
0.
24
mΩ
19
22
35
VGS =4.5V, ID =5.0A
VGS =2.5V, ID =4.0A
VGS =1.8V, ID =2.0A
VDS =5V, ID =3.8A
VGS =0 V, IS =1.0A
27
42
74
mΩ
mΩ
mΩ
S
Drainꢀsource onꢀstate resistance
RDS(on)
4
Forward tranconductance
Diode forward voltage
gFS
VSD
0.75
1
V
DYNAMIC PARAMETERS
Input capacitance
*
Ciss
Coss
Crss
Rg
630
164
137
1.5
pF
pF
pF
Ω
VDS =10V,VGS =0V,f =1MHz
Output capacitance
Reverse transfer capacitance
Gate resistance
VDS =0V,VGS =0V,f =1MHz
SWITCHING PARAMETERS*
Turnꢀon delay time
td(on)
tr
5.5
14
ns
ns
ns
ns
Turnꢀon rise time
VGS=5V,VDS=10V,
RL=1.7ꢀ,RGEN=6ꢀ
Turnꢀoff delay time
td(off)
tf
29
Turnꢀoff fall time
10.2
* These parameters have no way to verify.
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2 of 4
Revision: A
2014/11/12
M C C
TM
SI3420
Micro Commercial Components
Transfer Characteristics
Output Characteristics
o
20
5
4
3
2
1
0
Ta=25℃
Ta=25℃
VGS=10V
Pulsed
Pulsed
4V
3V
2.5V
15
2V
10
5
VGS=1.5V
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
DRAIN TO SOURCE VOLTAGE VDS (V)
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)
——
RDS(ON)
VGS
ID
——
70
60
50
40
30
20
10
90
60
30
0
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=1.8V
VGS=2.5V
ID=6A
VGS=4.5V
VGS=10V
0
2
4
6
8
10
0
2
4
6
8
DRAIN CURRENT ID (A)
GATE TO SOURCE VOLTAGE VGS (V)
IS —— VSD
10
1
Ta=25℃
Pulsed
0.1
0.01
1E-3
1E-4
1E-5
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
www.mccsemi.com
Revision: A
2014/11/12
3 of 4
M C C
TM
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel: 3Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
***IMPORTANT NOTICE***
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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
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convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
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represented on our website, harmless against all damages.
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MCC's products are not authorized for use as critical components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
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problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
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4 of 4
Revision: A
2014/11/12
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