首页 |元器件品牌

SS850D-BP [MCC]

Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3;
SS850D-BP
型号： SS850D-BP
厂家： Micro Commercial Components    Micro Commercial Components
描述：

Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

晶体管
文件： 总1页 (文件大小：122K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
SS8550  
Features  
·
·
·
·
·
TO-92 Plastic-Encapsulate Transistors  
Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.  
Collector-current 1.5A  
PNP Silicon  
Transistors  
Collector-base Voltage 40V  
Operating and storage junction temperature range: -55OC to +150OC  
Marking Code: SS8550  
·
TO-92  
A
E
C
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified  
B
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Base Breakdown Voltage  
40  
25  
6.0  
---  
---  
---  
---  
---  
Vdc  
Vdc  
(I =100uAdc, IE=0)  
C
Collector-Emitter Breakdown Voltage  
(I =0.1mAdc, IB=0)  
C
Emitter-Base Breakdown Voltage  
---  
Vdc  
(I =100uAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
0.1  
0.1  
uAdc  
uAdc  
uAdc  
(VCB=40Vdc, I =0)  
E
ICEO  
Collector Cutoff Current  
(VCE=20Vdc, I =0)  
B
IEBO  
Emitter Cutoff Current  
(VEB=5.0Vdc, I =0)  
C
D
ON CHARACTERISTICS  
hFE(1)  
DC Current Gain  
85  
40  
---  
---  
---  
300  
---  
---  
---  
(I =100mAdc, VCE=1.0Vdc)  
C
hFE(2)  
DC Current Gain  
(I =800mAdc, VCE=1.0Vdc)  
C
VCE(sat)  
VBE(sat)  
VEB  
Collector-Emitter Saturation Voltage  
(I =800mAdc, I =80mAdc)  
0.8  
1.2  
1.8  
Vdc  
Vdc  
Vdc  
C
B
G
Base-Emitter Saturation Voltage  
(I =800mAdc, I =80mAdc)  
C
B
DIMENSIONS  
Base- Emitter Voltage  
INCHES  
MM  
(I =1.5Adc)  
E
DIM  
A
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
MAX  
MIN  
4.45  
4.46  
12.7  
0.41  
3.43  
2.42  
MAX  
4.70  
4.70  
---  
NOTE  
SMALL-SIGNAL CHARACTERISTICS  
.185  
.185  
---  
fT  
Transistor Frequency  
190  
---  
MHz  
B
C
(I =50mAdc, VCE=10Vdc, f=30MHz)  
C
D
.020  
.145  
.105  
0.63  
3.68  
2.67  
E
G
CLASSIFICATION OF HFE (1)  
Rank  
B
C
D
Range  
85-160  
120-200  
160-300  
www.mccsemi.com  
Revision: 2  
2003/06/30  

相关型号：

SS850DP

 TRANSISTOR 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
MCC

SS8550

 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.
FAIRCHILD

SS8550

 Silicon Epitaxial Planar Transistor
BL Galaxy Ele

SS8550

 Plastic-Encapsulate Transistors PNP Silicon
WEITRON

SS8550

 TO-92 Plastic-Encapsulate Transistors
DAYA

SS8550

 TRANSISTOR(PNP)
HTSEMI

SS8550

 TO-92 Plastic-Encapsulate Transistors (PNP)
TGS

SS8550

 PNP Silicon General Purpose Transistor
SECOS

SS8550

 PNP Transistors
YFW

SS8550--SOT-323

 SOT-323 Plastic-Encapsulate Transistors
HDSEMI

SS8550-A

 Transistor
MCC

SS8550-AP

 Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
©2020 ICPDF网 联系我们和版权申明