TIP120 [MCC]
NPN Epitaxial Darlington Transistors; NPN外延达林顿晶体管
| 型号： | TIP120 |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN Epitaxial Darlington Transistors |
| 文件： | 总2页 (文件大小：478K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TM
TIP120
Micro Commercial Components
Features
·
·
·
Low collector-emitter saturation voltage
NPN Epitaxial
Darlington Transistors
Amplifier applications-emitter shunt resistors
TO-220 compact package
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
TO-220
O
Maximum Ratings
@ Ta=25 C Unless Otherwise Specified
C
B
Symbol
Rating
Rating
Unit
V
VCEO
VCBO
VEBO
ICP
IC
PC
Collector-Emitter Voltage
Colector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current
Collector power dissipation(Tc=25O
Junction Temperature
Storage Temperature
Thermal Resistence, Junction to case
Thermal Resistence, Junction to ambient
60
60
5.0
8.0
5.0
S
F
V
V
A
A
Q
T
A
)
65
W
OC
OC
C
U
TJ
TSTG
-55 to +150
-55 to +150
1
2
3
th
OC/W
H
R JC
1.92
62.5
OC/W
R JA
th
K
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
60
---
---
---
---
0.2
2.0
0.5
Vdc
L
J
D
(I C=100mAdc, IB=0)
R
G
ICBO
Collector-Base Cutoff Current
mAdc
mAdc
mAdc
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
N
(V CB=60Vdc,I =0)
E
IEBO
Emitter-Base Cutoff Current
DIMENSIONS
(V EB=5.0Vdc, I =0)
C
INCHES
MM
ICEO
Collector-Emitter Cutoff Current
MIN
14.22
9.65
MAX
15.88
10.67
NOTE
DIM
MIN
MAX
.625
A
B
C
.560
.380
.140
(V CE=30Vdc, I =0)
B
.420
.190
ON CHARACTERISTICS
3.56
4.82
hFE-1
Forward Current Transfer Ratio
1000
1000
---
---
---
D
F
.020
.139
.190
---
.045
.161
.110
.250
.025
0.51
3.53
2.29
---
1.14
4.09
2.79
6.35
0.64
(I C=0.5Adc, VCE=3.0Vdc)
G
H
J
hFE-2
Forward Current Transfer Ratio
(I C=3.0Adc, VCE=3.0Vdc)
.012
0.30
K
L
.500
.045
.580
.060
12.70
1.14
14.73
1.52
VCE(sat)-1
VCE(sat)-2
VBE(on)
Collector-Emitter Saturation Voltage
(I C=3.0Adc, I =12mAdc)
Collector-Emitter Saturation Voltage
(I C=5.0Adc, I =20mAdc)
Base-Emitter On Voltage
(I C=3.0Adc,VCE=3.0Adc)
2.0
4.0
2.5
Vdc
Vdc
Vdc
B
N
.190
.210
4.83
5.33
---
Q
R
S
T
U
V
.100
.080
.045
.230
-----
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
-----
3.43
2.92
1.39
6.86
1.27
-----
B
---
.045
1.15
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
Revision: 4
2009/08/11
1 of 2
M C C
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-BP
Bulk;1Kpcs/Box
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
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Revision: 4
2009/08/11
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