首页 |元器件品牌

TSMBJ0305C-064-T [MCC]

暂无描述;
TSMBJ0305C-064-T
型号： TSMBJ0305C-064-T
厂家： Micro Commercial Components    Micro Commercial Components
描述：

暂无描述
文件： 总4页 (文件大小：439K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TSMBJ0305C-064  
Features  
Transient Voltage  
Protection Device  
58 Volts  
·
·
·
·
·
Oxide-Glass passivated Junction  
Bi-Directional protection in a single device  
Surge capabilities up to 50A@10/1000us or 150A@8/20us  
High Off-State impedance and Low On-State voltage  
Plastic material has UL flammability classification 94V-0  
DO-214AA  
(SMBJ)  
Mechanical Data  
·
·
·
Case : Molded plastic  
H
Cathode Band  
Polarity : None cathode band denotes  
Approx Weight : 0.093grams  
J
Maximum Ratings  
Characteristic  
Non-repetitive peak  
impulse current  
Symbol  
Value  
Unit  
10/1000us  
A
C
I
PP  
50A  
E
Non-repetitive peak  
On-state current  
Operating temperature  
range  
Junction and storage  
temperature range  
8.3ms, one-half  
cycle  
D
B
ITSM  
20A  
F
G
T
OP  
-40~125oC  
-55~150oC  
DIMENSIONS  
TJ, T  
INCHES  
MIN  
.078  
.077  
.002  
---  
.030  
.065  
.205  
.160  
.130  
MM  
MIN  
STG  
DIM  
A
B
C
D
E
MAX  
.096  
.083  
.008  
.02  
MAX  
2.44  
2.10  
.20  
NOTE  
2.00  
1.96  
.05  
---  
.51  
.060  
.091  
.220  
.180  
.155  
.76  
1.52  
2.32  
5.59  
4.57  
3.94  
F
1.65  
5.21  
4.06  
3.30  
G
H
J
Thermal Resistance  
Characteristic  
Symbol  
Value  
Unit  
SUGGESTED SOLDER  
PAD LAYOUT  
Thermal Resistance  
junction to lead  
30oC/W  
R
JL  
0.090"  
Thermal Resistance  
junction to ambient  
On recommended  
pad layout  
120oC/W  
R
JA  
Typical positive  
temperature  
coefficient for  
0.085”  
0.1%/oC  
△
△
TJ  
VBR  
/
breakdown voltage  
0.070”  
www.mccsemi.com  
M C C  
TSMBJ0305C-064  
℃
ELECTRICAL CHARACTERISTIC @25 Unless otherwise specified  
Rated  
Repetitive Off  
-state Voltage Current@VDRM  
Off-state  
Leakage  
On-State  
Breakover  
Voltage  
Off-State  
Capacitance  
Parameter  
Voltage Breakover Current Holding Current  
@I =1.0A  
T
Symbol  
Units  
Limit  
VDRM  
Volts  
Max  
IDRM  
uA  
Max  
VBO  
Volts  
Max  
VT  
Volts  
Max  
IBO-  
mA  
Min  
IBO+  
mA  
Max  
IH-  
mA  
Min  
IH+  
mA  
Max  
CJ  
pF  
Typ.  
TSMBJ0305C-064  
58  
5
77  
5
50  
800  
150  
800  
100  
MAXIMUM RATED SURGE WAVEFORM  
Waveform  
Standard  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
Ipp (A)  
200  
150  
100  
60  
2/10 us  
100  
50  
0
Peak value (Ipp)  
tr = rise time to peak value  
tp = decay time to half value  
8/20 us  
10/160 us  
10/700 us  
10/560 us  
10/1000 us  
Half value  
ITU-T K20/21  
FCC Part 68  
60  
tr  
tp  
TIME  
GR-1089-CORE  
50  
Symbol  
VDRM  
IDRM  
VBR  
IBR  
Parameter  
I
Stand-off voltage  
IPP  
Leakage current at stand-off voltage  
Breakdown voltage  
IBO  
IH  
Breakdown current  
IBR  
IDRM  
V
Breakover voltage  
VBO  
IBO  
VBR  
VDRM  
VT  
Breakover current  
VBO  
NOTE: 1  
NOTE: 2  
Holding current  
IH  
On state voltage  
Peak pulse current  
Off-state capacitance  
VT  
IPP  
CO  
：
NOTE  
1. I > ( V / R ) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.  
H
L
L
The surge recovery time. It does not exceed 30ms.  
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal  
, VR=2Vdc bias.  
www.mccsemi.com  
M C C  
TSMBJ0305C-064  
Fig.1 - Off-State Current v.s Junction Temperature  
100  
Fig.2 - Relative Variation of  
Breakdown Voltage v.s Junction Temperature  
1.2  
1.15  
1.1  
V
(T )  
BR  
J
10  
1
℃
(T =25 )  
J
V
BR  
VDRM = 50V  
1.05  
1
0.1  
0.01  
0.95  
0.9  
0.001  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100 125 150 175  
℃
Tj , JUNCTION TEMPERATURE (  
)
℃
Tj ; JUNCTION TEMPERATURE (  
)
Fig.3 - Relative Variation of  
Breakover Voltage v.s Junction Temperature  
Fig.4 - On-State Current v.s On-State Voltage  
100  
10  
1
1.1  
1.05  
1
V
(T )  
BO  
J
℃
(T =25 )  
J
V
BO  
℃
= 25  
T
J
0.95  
-50  
-25  
0
25  
50  
75  
100 125 150 175  
1
2
3
4
5
6
7
8
9
℃
Tj ; JUNCTION TEMPERATURE (  
)
V(T) ; ON-STATE VOLTAGE  
Fig.5 - Relative Variation of  
Holding Current v.s Junction Temperature  
Fig.6 - Relative Variation of  
Junction Capacitance v.s Reverse Voltage Bias  
2
1.5  
1
1
C (VR)  
O
℃
Tj =25  
f=1MHz  
= 1V  
I
(T )  
J
H
C
O
(VR = 1V)  
0.5  
℃
(T =25 )  
J
I
V
H
RMS  
0
0.1  
-50  
-25  
0
25  
50  
75  
100  
125  
1
10  
VR ; REVERSE VOLTAGE (V)  
100  
℃
)
Tj ; JUNCTION TEMPERATURE (  
www.mccsemi.com  
M C C  
TSMBJ0305C-064  
TYPICAL APPLICATION CIRCUITS  
FUSE  
RING  
TELECOM  
EQUIPMENT  
TSPD 1  
E.G. MODEM  
TIP  
PTC  
RING  
TSPD 1  
TSPD 2  
TELECOM  
EQUIPMENT  
E.G. ISDN  
PTC  
TIP  
PTC  
RING  
TSPD 2  
TELECOM  
EQUIPMENT  
TSPD 1  
E.G. LINE CARD  
TSPD 3  
PTC  
TIP  
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.  
www.mccsemi.com  

相关型号：

TSMBJ0305C-064-TP

 Silicon Surge Protector, 77V V(BO) Max, 20A, DO-214AA, PLASTIC, SMBJ, 2 PIN
MCC

TSMBJ0305C-072

 Transient Voltage Protection Device 65 Volts
MCC

TSMBJ0305C-072

 Transient voltage protection device 65 volts
LUNSURE

TSMBJ0306C

 Transient Voltage Protection Device 75 to 320 Volts
MCC

TSMBJ0306C-TP

 暂无描述
MCC

TSMBJ0306CP

 Silicon Surge Protector, 98V V(BO) Max, 20A, DO-214AA, PLASTIC, SMBJ, 2 PIN
MCC

TSMBJ0307C

 Transient Voltage Protection Device 75 to 320 Volts
MCC

TSMBJ0307C-TP

 Silicon Surge Protector, 130V V(BO) Max, 20A, DO-214AA, PLASTIC, SMBJ, 2 PIN
MCC

TSMBJ0309C-130

 Transient Voltage Protection Device 120 Volts
MCC

TSMBJ0309C-130P

 Silicon Surge Protector, 160V V(BO) Max, 20A, DO-214AA, PLASTIC, SMBJ, 2 PIN
MCC

TSMBJ0310C

 Transient Voltage Protection Device 75 to 320 Volts
MCC

TSMBJ0310C-TP

 暂无描述
MCC
©2020 ICPDF网 联系我们和版权申明